140 results on '"Pi, T. W."'
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2. Antiferromagnetic correlations in the metallic strongly correlated transition metal oxide LaNiO$_3$
3. Incommensurate spin correlations in highly oxidized cobaltates La$_{2-x}$Sr$_{x}$CoO$_{4}$
4. Mn3TeO6 - A New Multiferroic Material with Two Magnetic Substructures
5. k=0 magnetic structure and absence of ferroelectricity in SmFeO3
6. Interface tailoring for CMOS, cryogenic electronics, and beyond
7. Perfecting high-κ/Ge and /InGaAs interfaces – push for ultimate CMOS and emerging cryogenic electronic devices
8. Electronic structures of pristine and potassium-doped rubrene thin films
9. Resonant photoemission spectroscopy of the ferromagnetic Kondo system CeAgSb2
10. Formation of Si-terminated SiC films on annealing C60 on a Si(001)-2 × 1 surface
11. Using irradiation effect to study the disparate anchoring stabilities of polar-organic molecules adsorbed on bulk and thin-film metal surfaces
12. Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys.
13. Band bending at the Ni/Si(100)-2×1 submonolayer interface
14. Photoemission study of CaF2 on Si(001)-2×1 during annealing
15. Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited)
16. Early nucleation on the Si( [formula omitted])-2×1 surface
17. Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 × 2 surface: A high-resolution core-level photoemission study.
18. Surface photoemission from Si(100) and inelastic electron mean-free-path in silicon
19. Antiferromagnetic correlations in the metallic strongly correlated transition metal oxide LaNiO3
20. Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study.
21. The reaction of Si(001) with magnesium and calcium.
22. Surface structure of SiC formed by C60 molecules on a Si(001)-2×1 surface at 800 °C.
23. Solid state amorphization at the room temperature deposited Ir/Si interface.
24. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
25. Intricacies of the Co3+ spin state in Sr2Co0.5Ir0.5O4 : An x-ray absorption and magnetic circular dichroism study
26. Cross-type orbital ordering in the layered hybrid organic-inorganic compound (C6H5CH2CH2NH3)2CuCl4
27. Temperature Dependence of the Homo in Rubrene Film Growth
28. Role of Alkali- and Alkali-Earth-Metal Atoms Adding at the Organic Semiconductor Heterointerfaces
29. Single-domain multiferroic BiFeO3 films
30. Incommensurate spin correlations in highly oxidized cobaltates La2−xSrxCoO4
31. Antiferromagnetic proximity effect in epitaxial CoO/NiO/MgO(001) systems
32. Growth and characterization of molecular beam epitaxy-grown Bi2Te3−xSex topological insulator alloys
33. Effect of Li Doping on Rubrene: C60 Heterojunctions
34. Antiferromagnetic correlations in the metallic strongly correlated transition metal oxide LaNiO3.
35. In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures
36. Multiple in-plane spin reorientation transitions inFe/CoObilayers grown on vicinalMgO(001)
37. Interfacial Electronic Properties of the Organic Heterojunctions: Rubrene/C60 and C60/Rubrene
38. Structural invariance upon antiferromagnetic ordering in geometrically frustrated swedenborgite, CaBaCo2Fe2O7
39. k=0Magnetic Structure and Absence of Ferroelectricity inSmFeO3
40. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition.
41. Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance.
42. Antiferromagnetic spin reorientation transition in epitaxial NiO/CoO/MgO(001) systems
43. (Invited) High /InGaAs for Ultimate CMOS - Interfacial Passivation, Low Ohmic Contacts, and Device Performance
44. Structure, Magnetism, and Valence States of Cobalt and Platinum in Quasi-One-Dimensional Oxides A3CoPtO6 with A = Ca, Sr
45. Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template
46. Determination of hole distribution in Sr14−xCaxCu24O41using soft x-ray absorption spectroscopy at the CuL3edge
47. Publisher's Note: Crystal field ground state of the orthorhombic Kondo semiconductors CeOs2Al10and CeFe2Al10[Phys. Rev. B87, 125119 (2013)]
48. Crystal field ground state of the orthorhombic Kondo semiconductors CeOs2Al10and CeFe2Al10
49. Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
50. Electronic structure of RuSr2EuCu2O8studied by x-ray absorption and photoemission spectroscopies
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