Author: "Pierre-Olivier Chapuis" - Searchworks@Jio Institute Digital Library Search Results

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91 results on '"Pierre-Olivier Chapuis"'

1. Heat dissipation in partially perforated phononic nano-membranes with periodicities below 100 nm

Author: Antonin M. Massoud, Valeria Lacatena, Maciej Haras, Emmanuel Dubois, Stéphane Monfray, Jean-Marie Bluet, Pierre-Olivier Chapuis, and Jean-François Robillard
Subjects: Biotechnology, TP248.13-248.65, Physics, QC1-999
Abstract: Understanding how thermal-phonon paths can be shaped is key for controlling heat dissipation at the nanoscale. Thermophononic crystals are periodic porous nanostructures with thermal conductivity deviating from effective medium theory, which is possible if the characteristic sizes are of the order of phonon mean free paths and/or if phonons are forced to flow in privileged directions. We investigate suspended silicon nanomembranes with a periodic array of partially perforated holes of original paraboloid shape, with all characteristic lengths below 100 nm. Results from scanning thermal microscopy, a thermal sensing technique derived from atomic force microscopy, indicate that partial perforation of the membranes impacts heat conduction moderately, with the holey crystals showing a thermal conductivity reduction by a factor 6 in comparison to the bulk and a factor 2.5 in comparison to the non-perforated membrane. The impact of the phononic shapes is analyzed in light of a complementary Monte Carlo ray-tracing estimate of the effective phonon mean free paths that include multiple phonon reflection and highlights phonon backscattering.
Published: 2022
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2. Non-idealities in the 3ω method for thermal characterization in the low- and high-frequency regimes

Author: Wassim Jaber and Pierre-Olivier Chapuis
Subjects: Physics, QC1-999
Abstract: This work is devoted to analytical and numerical studies of diffusive heat conduction in configurations considered in 3ω experiments, which aim at measuring thermal conductivity of materials. The widespread 2D analytical model considers infinite media and translational invariance, a situation which cannot be met in practice in numerous cases due to the constraints in low-dimensional materials and systems. We investigate how thermal boundary resistance between heating wire and sample, native oxide and heating wire shape affect the temperature fields. 3D finite element modelling is also performed to account for the effect of the bonding pads and the 3D heat spreading down to a typical package. Emphasis is given on the low-frequency regime, which is less known than the so-called slope regime. These results will serve as guides for the design of ideal experiments where the 2D model can be applied and for the analyses of non-ideal ones.
Published: 2018
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3. Spatial and spectral distributions of thermal radiation emitted by a semi-infinite body and absorbed by a flat film

Author: Etienne Blandre, Pierre-Olivier Chapuis, Mathieu Francoeur, and Rodolphe Vaillon
Subjects: Physics, QC1-999
Abstract: We analyze the radiative power emitted by a semi-infinite medium and absorbed by a flat film located in its vicinity. In the near-field regime, if the film is thin enough, the surface waves at the rear interface of the film can contribute to the heat transfer. As a result, the absorbed power can be enhanced farther from the front surface. In the near-to-far field transition regime, temporal coherence of thermal radiation and the associated interferences can be used to shape the spectrum of the transferred radiative heat flux by selecting approriate geometrical parameters. These results highlight possibilities to control both the location where the radiative power is absorbed in the film and the spectral distribution, which are of paramount importance for applications such as near-field thermophotovoltaics.
Published: 2015
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4. Thermal transport phenomena beyond the diffusive regime.

Author: Pierre-Olivier Chapuis, T. T. Trang Nghiem, Carolina Abs Da Cruz, and Elyes Nefzaoui
Published: 2016
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5. A study of AlGaAs PIN homojunctions for near-field thermophotonic applications (Conference Presentation)

Author: Julien Legendre and Pierre-Olivier Chapuis
Published: 2023
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6. Overcoming non-radiative losses with AlGaAs PIN junctions for near-field thermophotonic energy harvesting

Author: Julien Legendre, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), European Union’s Horizon 2020 research and innovation programme, and European Project: 951976,TPX-Power
Subjects: Photovoltaics, Near-field radiative heat transfer, Physics and Astronomy (miscellaneous), Energy harvesting, Light-emitting diode, [SPI.NRJ]Engineering Sciences [physics]/Electric power, PIN junction, [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], Classical Physics (physics.class-ph), FOS: Physical sciences, Physics - Classical Physics, Heat engine, Thermophotonics
Abstract: In a thermophotonic device used in an energy-harvesting configuration, a hot light-emitting diode (LED) is coupled to a photovoltaic (PV) cell by means of electroluminescent radiation in order to produce electrical power. Using fluctuational electrodynamics and the drift-diffusion equations, we optimise a device made of an AlGaAs PIN LED and a GaAs PIN PV cell with matched bandgaps. We find that the LED can work as an efficient heat pump only in the near field, where radiative heat transfer is increased by wave tunnelling. A key reason is that non-radiative recombination rates are reduced compared to radiative ones in this regime. At 10 nm gap distance and for 100 cm.s --1 effective surface recombination velocity, the power output can reach 2.2 W.cm --2 for a 600 K LED, which highlights the potential for low-grade energy harvesting., Comment: Applied Physics Letters, 2022
Published: 2022
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7. GaAs Near-Field Thermophotonic Devices: Approaching The Idealized Case With One-Dimensional PN Junctions

Author: Julien Legendre, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, European Union's Horizon 2020 research and innovation funding programme, and European Project: 951976,TPX-Power
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Renewable Energy, Sustainability and the Environment, FOS: Physical sciences, Applied Physics (physics.app-ph), Physics - Applied Physics, Optics (physics.optics), Physics - Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Abstract: Thermophotonics (TPX) is a technology close to thermophotovoltaics (TPV), where a heated light-emitting diode (LED) is used as the active thermal emitter of the system. It allows to tune the heat flux, by means of electroluminescence, to a spectral range matching better the gap of a photovoltaic cell. The concept is extended to near-field thermophotonics (NF-TPX), where enhanced energy conversion is due to both electric control and wave tunneling. We perform a thorough numerical analysis of a GaAs based NF-TPX device, by coupling a near-field radiative heat transfer solver based on fluctuational electrodynamics with an algorithm based on a simplified version of the drift-diffusion equations in 1D. Through the investigation of the emission and absorption profiles in the LED and the photovoltaic (PV) cell, and the scrutiny of the impact of key parameters on the performance of the device, we highlight the necessity to model precisely the charge transport in both the LED and the PV cell for obtaining accurate results. We also demonstrate that the performance obtained with this algorithm can approach idealized cases for improved devices. For the considered simplified architecture and 300 K temperature difference, we find a power density output of 3 kW.m−2 , underlining the potential for waste heat harvesting close to ambient temperature.
Published: 2021
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8. Radiative heat transfer at the nanoscale: experimental trends and challenges

Author: Rodolphe Vaillon, Pierre-Olivier Chapuis, and Christophe Lucchesi
Subjects: Physics, Photon, Nanophotonics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, symbols.namesake, Wavelength, 13. Climate action, Thermal radiation, 0103 physical sciences, Thermal, Radiative transfer, symbols, General Materials Science, Planck, 010306 general physics, 0210 nano-technology, Quantum tunnelling
Abstract: Energy transport theories are being revisited at the nanoscale, as macroscopic laws known for a century are broken at dimensions smaller than those associated with energy carriers. For thermal radiation, where the typical dimension is provided by Wien's wavelength, Planck's law and associated concepts describing surface-to-surface radiative transfer have to be replaced by a full electromagnetic framework capturing near-field radiative heat transfer (photon tunnelling between close bodies), interference effects and sub-wavelength thermal emission (emitting body of small size). It is only during the last decade that nanotechnology has allowed for many experimental verifications – with a recent boom – of the large increase of radiative heat transfer at the nanoscale. In this minireview, we highlight the parameter space that has been investigated until now, showing that it is limited in terms of inter-body distance, temperature and object size, and provide clues about possible thermal-energy harvesting, sensing and management applications. We also provide an outlook on open topics, underlining some difficulties in applying single-wavelength approaches to broadband thermal emitters while acknowledging the promise of thermal nanophotonics and observing that molecular/chemical viewpoints have been hardly addressed.
Published: 2021

9. Thermal boundary conductance of CVD-grown MoS2 monolayer-on-silica substrate determined by scanning thermal microscopy

Author: Christian Mateo Frausto-Avila, Victor M. Arellano-Arreola, Jose Martin Yañez Limon, Andres De Luna-Bugallo, Séverine Gomès, and Pierre-Olivier Chapuis
Subjects: Physics and Astronomy (miscellaneous), FOS: Physical sciences, Physics - Applied Physics, Applied Physics (physics.app-ph)
Abstract: We characterize heat dissipation of supported molybdenum disulfide (MoS2) monolayers grown by chemical vapor deposition by means of ambient-condition scanning thermal microscopy (SThM). We find that the thermal boundary conductance of the MoS2 monolayers in contact with 300 nm of SiO2 is around 4.6 ± 2 MW m−2 K−1. This value is in the low range of the values determined for exfoliated flakes with other techniques such as Raman thermometry, which span an order of magnitude (0.44–50 MW m−2 K−1), and underlines the dispersion of measurements. The sensitivity to the in-plane thermal conductivity of supported MoS2 is very low, highlighting that the thermal boundary conductance is the key driver of heat dissipation for the MoS2 monolayer when it is not suspended. In addition, this work also demonstrates that SThM calibration using different thicknesses of SiO2, initially aimed at being used with bulk materials can be extended to 2D materials.
Published: 2022
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10. Low-energy bandgap thermophotovoltaic cells for medium-grade heat sources

Author: Dilek Cakiroglu, Jean-Philippe Perez, Axel Evirgen, Christophe Lucchesi, Pierre-Olivier Chapuis, Thierry Taliercio, Eric Tournié, Rodolphe Vaillon, Vaillon, Rodolphe, Démonstrateur thermophotovoltaïque en champ proche - - DEMO-NFR-TPV2016 - ANR-16-CE05-0013 - AAPG2016 - VALID, Equipements d'excellence - Centre d'Excellence sur les Antimoniures - - EXTRA2011 - ANR-11-EQPX-0016 - EQPX - VALID, IDEXLYON - - IDEXLYON2016 - ANR-16-IDEX-0005 - IDEX - VALID, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), and ANR-16-IDEX-0005,IDEXLYON,IDEXLYON(2016)
Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric power, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract: International audience
Published: 2021

11. Impact of roughness on heat conduction involving nanocontacts

Author: Séverine Gomès, Nupinder Jeet Kaur, Petr Klapetek, Eloïse Guen, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Czech Metrology Institute, and European Project: 604668,EC:FP7:NMP,FP7-NMP-2013-LARGE-7,QUANTIHEAT(2013)
Subjects: Resistive touchscreen, Materials science, Physics and Astronomy (miscellaneous), Orders of magnitude (temperature), FOS: Physical sciences, 02 engineering and technology, Surface finish, Scanning thermal microscopy, Physics - Applied Physics, Applied Physics (physics.app-ph), 010402 general chemistry, 021001 nanoscience & nanotechnology, Curvature, Thermal conduction, 01 natural sciences, 0104 chemical sciences, Thermal conductivity, Surface roughness, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Composite material, 0210 nano-technology
Abstract: International audience; The impact of surface roughness on conductive heat transfer across nanoscale contacts is investigated by means of scanning thermal microscopy. Silicon surfaces with out-of-plane rms roughness of ~0, 0.5, 4, 7 and 11 nm are scanned both under air and vacuum conditions. Three types of resistive SThM probes spanning curvature radii over orders of magnitude are used. A correlation between thermal conductance and adhesion force is highlighted. In comparison with a flat surface, the contact thermal conductance can decrease as much as 90% for a microprobe and by about 50% for probes with curvature radius lower than 50 nm. The effects of multi-contact and ballistic heat conduction are discussed. Limits of contact techniques for thermal conductivity characterization are also discussed.
Published: 2021
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12. Recent advances in near-field thermophotovoltaics

Author: Rodolphe Vaillon, Christophe Lucchesi, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Pierre-Olivier Chapuis, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), DEMO-NFR-TPV ANR-16-CE05-0013EquipEx EXTRA ANR-11-EQPX-0016IDEXLYON ANR-16-IDEX-0005, Daniele M. Trucchi, Gaspare Varvaro (CNR-ISM, Roma, Italy), ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), Vaillon, Rodolphe, and Démonstrateur thermophotovoltaïque en champ proche - - DEMO-NFR-TPV2016 - ANR-16-CE05-0013 - AAPG2016 - VALID
Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2020

13. Thermal conductivity of irradiated porous silicon down to the oxide limit investigated by Raman thermometry and scanning thermal microscopy

Author: Jean-Marie Bluet, A. M. Massoud, Pierre-Olivier Chapuis, Bruno Canut, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon
Subjects: 010302 applied physics, Materials science, Silicon, Scanning electron microscope, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, Porous silicon, 01 natural sciences, Amorphous solid, Thermal conductivity, chemistry, Transmission electron microscopy, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], 0210 nano-technology, Porosity
Abstract: International audience; Irradiating porous silicon is expected to reduce thermal conductivity without altering the porous structure and can be studied by optical techniques provided optical properties can be established reliably. Toward this end, meso-porous silicon (PSi), with a porosity of 56%, was prepared from p + Si wafer (0.01-0.02 .cm-1 resistivity) and was partially amorphized by irradiation in the electronic regime with 129 Xe ions at two different energies (29 MeV and 91 MeV) and five fluences ranging from 10 12 cm-2 to 3.10 13 cm-2. The PSi structure is monitored by scanning electron microscopy. High-resolution transmission electron microscopy shows that the amorphous phase is homogeneous in volume and that there is no formation of amorphous-crystalline core-shell structures. An agreement is found between the thermal conductivity results obtained with micro-Raman thermometry, which is an optical contactless technique heating the sample in the depth, and scanning thermal microscopy, which is an electrical technique heating the sample by contact at the sample surface. A linear relation is established between the effective thermal conductivity and the amorphous fraction, predicting the thermal conductivity of fully-amorphous porous Si below 1 W.m-1 .K-1. The obtained values are comparable to that of SiO2, reduced by a factor 6 in comparison to non-irradiated porous samples (~6.5 W.m-1 .K-1) and smaller than bulk silicon by more than two orders of magnitude.
Published: 2020
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14. Thermophotovoltaïque : des cellules PV pour convertir le rayonnement thermique

Author: Pierre-Olivier Chapuis, Rodolphe Vaillon, Christophe Lucchesi, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI]Engineering Sciences [physics]
Abstract: International audience; Les cellules solaires permettent de convertir le rayonnement du soleil en puissance électrique, mais le rayonnement thermique issu des corps chauds est une autre source d’énergie omniprésente dans le milieu ambiant qui peut être mise à profit. Les cellules dites thermophotovoltaïques convertissent en électricité ce rayonnement dans la gamme infrarouge avec des rendements attendus élevés.
Published: 2020
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15. SThM-based local thermomechanical analysis: Measurement intercomparison and uncertainty analysis

Author: Miroslav Valtr, Olga Kazakova, Tony Maxwell, Petr Klapetek, Severine Gomes, Alexandre Allard, Bruno Hay, Eloïse Guen, David Renahy, Guillaume Davee, Pierre-Olivier Chapuis, Robert Puttock, Jan Martinek, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Czech Metrology Institute, National Physical Laboratory [Teddington] (NPL), and Laboratoire National de Métrologie et d'Essais [Trappes] (LNE )
Subjects: Reproducibility, Materials science, 020209 energy, Scale of temperature, General Engineering, Analytical chemistry, 02 engineering and technology, Repeatability, Scanning thermal microscopy, Condensed Matter Physics, 01 natural sciences, 010305 fluids & plasmas, Differential scanning calorimetry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Calibration, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Thermomechanical analysis, Uncertainty analysis, ComputingMilieux_MISCELLANEOUS
Abstract: We assess Scanning Thermal Microscopy (SThM) with a self-heated doped silicon nanoprobe as a method for determining the local phase transition temperature of polymeric materials by means of nano-thermomechanical analysis (nano-TA). Reference semi-crystalline samples and amorphous test samples, characterized first using differential scanning calorimetry (DSC), are studied by nano-TA in the temperature range 50–250 °C. The repeatability, the reproducibility and the reliability of nano-TA are evaluated by three laboratories by applying the same calibration protocol prior to and after the measurements. The calibration of the probe temperature scale and the variability of the sample thermomechanical response are validated by Monte Carlo uncertainty analysis, resulting in a calculated uncertainty between 3 and 5 K. The SThM probe temperature data represented as a function of DSC-measured phase-transition temperatures of the semi-crystalline samples rule out the possibility of a quadratic fit and call for a linear calibration in absence of additional information. The maximum deviation obtained between SThM and DSC temperatures with such linear calibration reaches ± 30 K for melting temperatures and 50 K for glass transition temperatures.
Published: 2020
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16. Thermal and Thermomechanical Investigation of Polymeric Thin Films on Substrate

Author: C. M. Sotomayor-Torres, Pierre-Olivier Chapuis, W. Sun, G. Hamaoui, Francesc Alzina, Severine Gomes, A. El Sachar, Eloïse Guen, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Electronique, Systèmes de communication et Microsystèmes (ESYCOM), and Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS)-Université Gustave Eiffel
Subjects: Microscope, Materials science, Silicon, Doping, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, law.invention, chemistry.chemical_compound, Thermal conductivity, chemistry, law, Thermomechanical analysis, Polystyrene, Thin film, Composite material, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: Polystyrene (PS) thin films spin coated on either silicon or quartz substrates were prepared to investigate the thin film's thickness effects on both the heat transport and glass phase transition temperature of the PS. This characterisation has been achieved through a scanning thermal microscope setup (SThM) using doped silicon thermoresistive nanoprobe. Thermal conductance and thermomechanical analyses were performed. Our first results show that thermomechanical analysis measurement on ultrathin films on a substrate depends on the substrate thermal properties and confirm that the PS phase transition temperature is dependent on the interactions between PS ultrathin films and their respective substrates.
Published: 2020
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17. Temperature dependence of near-field radiative heat transfer above room temperature

Author: Christophe Lucchesi, Pierre-Olivier Chapuis, Rodolphe Vaillon, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Région Occitanie, ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), ANR-16-IDEX-0005,IDEXLYON,IDEXLYON(2016), European Project: 766853,H2020-FETOPEN-1-2016-2017,EFINED(2018), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Photonique et Ondes (PO), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), and Énergie (NRJ)
Subjects: Work (thermodynamics), Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Classical Physics (physics.class-ph), FOS: Physical sciences, Radiant energy, Near and far field, Physics - Classical Physics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, Thermal conductivity, Thermal radiation, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Radiative transfer, General Materials Science, SPHERES, Black-body radiation, 010306 general physics, 0210 nano-technology, Energy (miscellaneous)
Abstract: International audience; Stefan-Boltzmann's law indicates that far-field blackbody radiation scales at the fourth power of temperature. The temperature dependence of radiative heat transfer in the near field is expected to be very different due to the contribution of evanescent waves. In this work, we experimentally observe such deviation on the radiative thermal conductance by bringing a hot micrometric sphere in the nearfield of a room-temperature planar substrate, down to a separation distance of few tens of nanometers. The influence of materials is assessed by using either SiO2 or graphite spheres, and SiO2, graphite and InSb substrates. Temperature differences as large as 900 K are imposed. A maximum near-field radiative thermal conductance of about 70 nW.K-1 is found for a graphite-graphite configuration. The experimental results demonstrate that the temperature exponent weakens in the near field, ranging from 2.2 to 4.1, depending on the gap distance and the materials. These results have broad consequences, in particular on the design of high-temperature nanoscale radiative energy devices.
Published: 2021
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18. Efficient near-field thermophotovoltaic conversion with InSb cells

Author: Christophe Lucchesi, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Pierre-Olivier Chapuis, Rodolphe Vaillon, Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), ANR-16-IDEX-0005,IDEXLYON,IDEXLYON(2016), Vaillon, Rodolphe, and Démonstrateur thermophotovoltaïque en champ proche - - DEMO-NFR-TPV2016 - ANR-16-CE05-0013 - AAPG2016 - VALID
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2020

19. Near-field radiative heat transfer experiments and thermophotovoltaic conversion

Author: Christophe Lucchesi, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Rodolphe Vaillon, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), and Chapuis, Pierre-Olivier
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: International audience
Published: 2019

20. Mesures expérimentales du transfert radiatif en champ proche et de la conversion thermophotovoltaïque

Author: Christophe Lucchesi, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Rodolphe Vaillon, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, and Chapuis, Pierre-Olivier
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: National audience
Published: 2019

21. Near-field radiative heat transfer measurements between a sphere and a substrate: large temperature differences, geometrical effects and materials

Author: Christophe Lucchesi, Rodolphe Vaillon, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Tournié, E., Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Chapuis, Pierre-Olivier
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: International audience
Published: 2019

22. Coherent regime and far-to-near-field transition for radiative heat transfer

Author: Shigenao Maruyama, Yoichiro Tsurimaki, Pierre Olivier Chapuis, Rodolphe Vaillon, Junnosuke Okajima, and Atsuki Komiya
Subjects: Physics, Radiation, 010504 meteorology & atmospheric sciences, Condensed matter physics, chemistry.chemical_element, Near and far field, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, chemistry, Aluminium, Thermal radiation, Transition zone, Standard theory, 0210 nano-technology, Spectroscopy, 0105 earth and related environmental sciences, Coherence (physics)
Abstract: Radiative heat transfer between two semi-infinite parallel media is analyzed in the transition zone between the near-field and the classical macroscopic, i.e. incoherent far-field, regimes of thermal radiation, first for model gray materials and then for real metallic (Al) and dielectric (SiC) materials. The presence of a minimum in the flux-distance curve is observed for the propagative component of the radiative heat transfer coefficient, and in some cases for the total coefficient, i.e. the sum of the propagative and evanescent components. At best this reduction can reach 15% below the far-field limit in the case of aluminum. The far-to-near-field regime taking place for the distance range between the near-field and the classical macroscopic regime involves a coherent far-field regime. One of its limits can be practically defined by the distance at which the incoherent far-field regime breaks down. This separation distance below which the standard theory of incoherent thermal radiation cannot be applied anymore is found to be larger than the usual estimate based on Wien׳s law and varies as a function of temperature. The aforementioned effects are due to coherence, which is present despite the broadband spectral nature of thermal radiation, and has a stronger impact for reflective materials.
Published: 2017
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23. Scanning thermal microscopy on samples of varying effective thermal conductivities and identical flat surfaces

Author: Jonathan M. R. Weaver, Philipp Dobson, Eloïse Guen, Severine Gomes, Gordon B Mills, R. K. Rajkumar, Pierre-Olivier Chapuis, Chapuis, Pierre-Olivier, QUANTItative scanning probe microscopy techniques for HEAT transfer management in nanomaterials and nanodevices. - QUANTIHEAT - - EC:FP7:NMP2013-12-01 - 2017-11-30 - 604668 - VALID, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Kelvin Nanotechnology, University of Glasgow (University of Glasgow), European Project: 604668,EC:FP7:NMP,FP7-NMP-2013-LARGE-7,QUANTIHEAT(2013), and University of Glasgow
Subjects: 010302 applied physics, Materials science, Thermal resistance, General Physics and Astronomy, Thermal contact, 02 engineering and technology, Surface finish, Substrate (electronics), Scanning thermal microscopy, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Wafer, Composite material, Thin film, 0210 nano-technology, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: International audience; We propose an approach for the characterization of scanning thermal microscopy (SThM) probe response using a sample with silicon dioxide steps. The chessboard-like sample provides a series of nine surfaces made of the same material, with identical roughness, but consisting of different thicknesses of silica layers standing on a single silicon wafer. The nine regions have different effective thermal conductivities, allowing calibration of SThM probes within a given set of surface conditions. A key benefit is the possibility of comparing the spatial resolution and the sensitivity to vertical inhomogeneities of the sample for different probes. A model is provided to determine the thermal contact area and contact thermal resistance from the experimental data. The results underline that ballistic heat conduction can be significant in crystalline substrates below the top thin films, especially for film thicknesses lower than 200 nm and effective thermal contact radius lower than 200 nm. They also highlight the sensitivity of SThM to ultrathin films, as well as the substrate below micrometric films under in-air conditions but not when in vacuum. This work advances quantitative nanometer-scale thermal metrology, where usual photothermal methods are more difficult to implement.
Published: 2020
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24. Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

Author: Rodolphe Vaillon, Jean-Philippe Perez, Eric Tournié, Thierry Taliercio, Dilek Cakiroglu, Christophe Lucchesi, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Fabrication, Equivalent series resistance, Band gap, business.industry, Indium antimonide, Photovoltaic system, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Atomic and Molecular Physics, and Optics, 010309 optics, chemistry.chemical_compound, Semiconductor, Optics, chemistry, Thermophotovoltaic, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Absorption (electromagnetic radiation)
Abstract: International audience; Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.
Published: 2019
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25. Design of efficient photovoltaic cells for near-field thermophotovoltaics

Author: Daniel Milovich, John Desutter, Dilek Cakiroglu, Christophe Lucchesi, Pierre-Olivier Chapuis, Elisa Antolin, Alejandro Datas, Villa Juan, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Antonio Marti, Mathieu Francoeur, Rodolphe Vaillon, Radiative Energy Transfer Lab, Department of Mechanical Engineering, University of Utah, USA, University of Utah, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Vaillon, Rodolphe
Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric power, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract: International audience
Published: 2018

26. Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependence

Author: Christophe Lucchesi, Rodolphe Vaillon, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Chapuis, Pierre-Olivier, Vaillon, Rodolphe, Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: International audience
Published: 2018

27. Local Thermophysical Properties Measurements on Polymers using Doped Silicon SThM Probe: Uncertainty Analysis and Interlaboratory Comparison

Author: Petr Klapetek, Tony Maxwell, Alexandre Allard, Miroslav Valtr, Eloïse Guen, Severine Gomes, David Renahy, Bruno Hay, Robb Puttock, Jan Martinek, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Czech Metrology Institute, National Physical Laboratory [Teddington] (NPL), Laboratoire National de Métrologie et d'Essais [Trappes] (LNE ), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)
Subjects: Reproducibility, Materials science, Silicon, business.industry, Doping, chemistry.chemical_element, Repeatability, Scanning thermal microscopy, Temperature measurement, [SPI]Engineering Sciences [physics], Thermal conductivity, chemistry, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, Uncertainty analysis
Abstract: We first assess Scanning Thermal Microscopy (SThM) with a self-heated doped silicon nanoprobe as a method for the simultaneous identification of the local thermal conductivity and phase transition temperature of polymeric materials. In a second step, results of an inter laboratory comparison and an uncertainty analysis involving three laboratories applying the same protocol of phase transition temperature measurement allow evaluating the repeatability, the reproducibility and the reliability of the method.
Published: 2018
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28. Near-field radiative heat transfer experiments for thermophotovoltaic conversion

Author: Christophe Lucchesi, Rodolphe Vaillon, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Tournié, E., Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Chapuis, Pierre-Olivier
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: International audience
Published: 2018

29. Thermophotovoltaic devices for solar and thermal energy conversion

Author: Rodolphe Vaillon, Christophe Lucchesi, Etienne Blandre, Pierre-Olivier Chapuis, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Elisa Antolin, Alejandro Datas, Antonio Marti, Daniel Milovich, John Desutter, Lei Tang, Mathieu Francoeur, Makoto Shimizu, Asaka Kohiyama, Hiroo Yugami, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Instituto de Energía Solar, Universidad Politécnica de Madrid (IES-UPM), Radiative Energy Transfer Lab, Department of Mechanical Engineering, University of Utah, USA, University of Utah, Tohoku University [Sendai], ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), European Project: 737054,AMADEUS, Vaillon, Rodolphe, Démonstrateur thermophotovoltaïque en champ proche - - DEMO-NFR-TPV2016 - ANR-16-CE05-0013 - AAPG2016 - VALID, Next generation Materials and Solid State Devices for Ultra High Temperature Energy Storage and Conversion - AMADEUS - 737054 - INCOMING, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon
Subjects: [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018

30. Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïque

Author: Christophe Lucchesi, Pierre-Olivier Chapuis, Dilek Cakiroglu, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Rodolphe Vaillon, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Vaillon, Rodolphe, and Démonstrateur thermophotovoltaïque en champ proche - - DEMO-NFR-TPV2016 - ANR-16-CE05-0013 - AAPG2016 - VALID
Subjects: [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract: National audience
Published: 2018

31. 3D Hybrid Bonding assembly studied by Scanning Thermal Microscopy, resistive thermometry and Finite Element Modelling

Author: Sebastien Gallois-Garreignot, Rafael Prffito, Pierre-Olivier Chapuis, Vincent Fiori, Jean-Philippe Colonna, Axel Pic, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), and Chapuis, Pierre-Olivier
Subjects: Resistive touchscreen, Materials science, business.industry, Scanning thermal microscopy, Thermal conduction, Homogenization (chemistry), Finite element method, Electrical resistance and conductance, Thermal, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Microelectronics, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: Heat dissipation is one of the main challenges faced by microelectronics due to the increase of integration density. From Silicon-On-Insulator (SOI) to 3D-stacked technologies, accurate knowledge of the chip temperature is needed to quantify the thermal performances at the device and package levels. In this work, a 3D Hybrid Bonding assembly is studied by means of resistive thermometry and Scanning Thermal Microscopy (SThM), a technique based on atomic force microscopy where a self-heated electrical resistance is added at the probe apex in order to measure the surface temperature of test chips. The measurements are compared to numerical simulation of heat conduction with Finite Element Modeling, which require local homogenization inside the chip to reduce the computation time due to the large aspect ratios involved. The comparison is only possible once a numerical reproduction of the experiment has been done by means of a virtual scan. Reasonable agreement between the numerical temperature field and the experimental one is observed.
Published: 2018

32. Temperature-dependent and optimized thermal emission by spheres

Author: O. Merchiers, K.L. Nguyen, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics, Work (thermodynamics), 010504 meteorology & atmospheric sciences, Physics and Astronomy (miscellaneous), Fourth power, Radius, Dielectric, 01 natural sciences, Power law, Square (algebra), Computational physics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 0103 physical sciences, Emissivity, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, SPHERES, 010306 general physics, ComputingMilieux_MISCELLANEOUS, 0105 earth and related environmental sciences
Abstract: We investigate the temperature and size dependencies of thermal emission by homogeneous spheres as a function of their dielectric properties. Different power laws obtained in this work show that the emitted power can depart strongly from the usual fourth power of temperature given by Planck's law and from the square or the cube of the radius. We also show how to optimize the thermal emission by selecting permittivities leading to resonances, which allow for the so-called super-Planckian regime. These results will be useful as spheres, i.e. the simplest finite objects, are often considered as building blocks of more complex objects.
Published: 2018
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33. Spectrally shaping high-temperature radiators for thermophotovoltaics using Mo-HfO

Author: Etienne, Blandre, Makoto, Shimizu, Asaka, Kohiyama, Hiroo, Yugami, Pierre-Olivier, Chapuis, and Rodolphe, Vaillon
Abstract: Easy-to-fabricate, high-temperature, thermally-stable radiators are critical elements for developing efficient and sustainable thermophotovoltaic energy conversion devices. In this frame, a trilayer-on-substrate structure is selected. It is composed of a refractory metal -molybdenum - constituting the substrate and an intermediate thin film sandwiched between two hafnia transparent layers. An in-depth analysis shows that two spectrally distinct interference regimes take place in the hafnia layer-molybdenum thin film substructure, and that backward and forward thermally-emitted waves by the thin film are selected in two distinct interferential resonating cavities. The interference regimes within and between these cavities are key to the spectral shaping of thermal emission. The radiative performances of the structures are evaluated by introducing a figure of merit. Using the example of a GaSb cell, it is shown that the structure can be optimized for providing the broadband large emission with a steep cutoff required for mitigating photoconversion losses.
Published: 2018

34. Scanning thermal microscopy: A review

Author: Séverine Gomès, Ali Assy, and Pierre-Olivier Chapuis
Subjects: 010302 applied physics, Materials science, Nanotechnology, 02 engineering and technology, Surfaces and Interfaces, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Characterization (materials science), Scanning probe microscopy, Thermal conductivity measurement, Thermal conductivity, 0103 physical sciences, Thermal, Materials Chemistry, Miniaturization, Electrical and Electronic Engineering, 0210 nano-technology, Nanoscopic scale
Abstract: Fundamental research and continued miniaturization of materials, components and systems have raised the need for the development of thermal-investigation methods enabling ultra-local measurements of surface temperature and thermo-physical properties in many areas of science and applicative fields. Scanning thermal microscopy (SThM) is a promising technique for nanometer-scale thermal measurements, imaging, and study of thermal transport phenomena. This review focuses on fundamentals and applications of SThM methods. It inventories the main scanning probe microscopy-based techniques developed for thermal imaging with nanoscale spatial resolution. It describes the approaches currently used to calibrate the SThM probes in thermometry and for thermal conductivity measurement. In many cases, the link between the nominal measured signal and the investigated parameter is not straightforward due to the complexity of the micro/nanoscale interaction between the probe and the sample. Special attention is given to this interaction that conditions the tip–sample interface temperature. Examples of applications of SThM are presented, which include the characterization of operating devices, the measurements of the effective thermal conductivity of nanomaterials and local phase transition temperatures. Finally, future challenges and opportunities for SThM are discussed.
Published: 2015
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35. Microfabricated sensor platform with through-glass vias for bidirectional 3-omega thermal characterization of solid and liquid samples

Author: Aapo Varpula, Mika Prunnila, Pierre-Olivier Chapuis, Corinna Grosse, Kestutis Grigoras, Daniel May, Mohamad Abo Ras, Severine Gomes, Bernhard Wunderle, HEP, INSPIRE, Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA), Berliner Nanotest und Design GmbH, VTT Technical Research Centre of Finland (VTT), Chemnitz University of Technology / Technische Universität Chemnitz, Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Technical Research Centre of Finland, Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), and Université de Lyon-Institut National des Sciences Appliquées ( INSA )
Subjects: thermal sensors, Materials science, Physics - Instrumentation and Detectors, Passivation, thermal diffusivity, FOS: Physical sciences, 02 engineering and technology, Thermal diffusivity, 7. Clean energy, 01 natural sciences, Atomic layer deposition, 0103 physical sciences, atomic layer deposition (ALD), Deposition (phase transition), thermal conductivity, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Electrical and Electronic Engineering, Thermal analysis, ta216, Instrumentation, [ PHYS.PHYS.PHYS-INS-DET ] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], ComputingMilieux_MISCELLANEOUS, microfabrication, 010302 applied physics, ta214, Borosilicate glass, business.industry, Metals and Alloys, Instrumentation and Detectors (physics.ins-det), OtaNano, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, bidirectional 3-omega method, [PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Optoelectronics, thermal characterization platform, 0210 nano-technology, business, Layer (electronics), Microfabrication
Abstract: A novel microfabricated, all-electrical measurement platform is presented for a direct, accurate and rapid determination of the thermal conductivity and diffusivity of liquid and solid materials. The measurement approach is based on the bidirectional 3-omega method. The platform is composed of glass substrates on which sensor structures and a very thin dielectric nanolaminate passivation layer are fabricated. Using through-glass vias for contacting the sensors from the chip back side leaves the top side of the platform free for deposition, manipulation and optical inspection of the sample during 3-omega measurements. The thin passivation layer, which is deposited by atomic layer deposition on the platform surface, provides superior chemical resistance and allows for the measurement of electrically conductive samples, while maintaining the conditions for a simple thermal analysis. We demonstrate the measurement of thermal conductivities of borosilicate glass, pure water, glycerol, 2-propanol, PDMS, cured epoxy, and heat-sink compounds. The results compare well with both literature values and values obtained with the steady-state divided bar method. Small sample volumes (∼0.02 mm³) suffice for accurate measurements using the platform, allowing rapid temperature-dependent measurements of thermal properties, which can be useful for the development, optimization and quality testing of many materials, such as liquids, gels, pastes and solids.
Published: 2018
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36. Near-field radiative heat transfer in scanning thermal microscopy computed with the boundary element method

Author: Pierre Olivier Chapuis, O. Merchiers, K.L. Nguyen, Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon
Subjects: Radiation, Materials science, business.industry, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, Atomic and Molecular Physics, and Optics, Computational physics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Optics, Heat flux, Thermal radiation, 0103 physical sciences, Heat transfer, Radiative transfer, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], SPHERES, 010306 general physics, 0210 nano-technology, business, Boundary element method, Spectroscopy, ComputingMilieux_MISCELLANEOUS
Abstract: We compute the near-field radiative heat transfer between a hot AFM tip and a cold substrate. This contribution to the tip-sample heat transfer in Scanning Thermal Microscopy is often overlooked, despite its leading role when the tip is out of contact. For dielectrics, we provide power levels exchanged as a function of the tip-sample distance in vacuum and spatial maps of the heat flux deposited into the sample which indicate the near-contact spatial resolution. The results are compared to analytical expressions of the Proximity Flux Approximation. The numerical results are obtained by means of the Boundary Element Method (BEM) implemented in the SCUFF-EM software, and require first a thorough convergence analysis of the progressive implementation of this method to the thermal emission by a sphere, the radiative transfer between two spheres, and the radiative exchange between a sphere and a finite substrate.
Published: 2017
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37. Thickness-dependent thermal properties of amorphous insulating thin films measured by photoreflectance microscopy

Author: Pierre-Olivier Chapuis, John M. Stormonth-Darling, J.-P. Roger, Gilles Tessier, R. Ritasalo, M. Matvejeff, A. Al Mohtar, Severine Gomes, Phillip S. Dobson, Université Paris Descartes - Paris 5 (UPD5), Laboratoire de Neurophotonique (UMR 8250), Université Paris Descartes - Paris 5 (UPD5)-Centre National de la Recherche Scientifique (CNRS), Université Paris Descartes - Faculté des Sciences Fondamentales et Biomédicales (UPD5 Sciences), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL), Institut Langevin - Ondes et Images (UMR7587) (IL), Sorbonne Université (SU)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université de Paris (UP)-Centre National de la Recherche Scientifique (CNRS), Picosun Oy, Picosun Oy, Tietotie 3, 02150 Espoo, Finland, Kelvin Nanotechnology, School of Engineering, University of Glasgow, Glasgow, UK, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Optique Physique (UPR0005) (LOP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), ESPCI ParisTech, Institut Langevin - Ondes et Images, Université Paris Diderot - Paris 7 (UPD7)-ESPCI ParisTech-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Optique Physique (LOP - ESPCI), and Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Thermal oxidation, Materials science, Metals and Alloys, Analytical chemistry, 02 engineering and technology, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Amorphous solid, [SPI.MAT]Engineering Sciences [physics]/Materials, Atomic layer deposition, [SPI]Engineering Sciences [physics], Thermal conductivity, 0103 physical sciences, Materials Chemistry, Interfacial thermal resistance, Thin film, 0210 nano-technology, Layer (electronics), ComputingMilieux_MISCELLANEOUS
Abstract: In this work, we report on the measurement of the thermal conductivity of thin insulating films of SiO2 obtained by thermal oxidation, and Al2O3 grown by atomic layer deposition (ALD), both on Si wafers. We used photoreflectance microscopy to determine the thermal properties of the films as a function of thickness in the 2 nm to 1000 nm range. The effective thermal conductivity of the Al2O3 layer is shown to decrease with thickness down to 70% for the thinnest layers. The data were analyzed upon considering that the change in the effective thermal conductivity corresponds to an intrinsic thermal conductivity associated to an additional interfacial thermal resistance. The intrinsic conductivity and interfacial thermal resistance of SiO2 were found to be equal to 0.95 W/m·K and 5.1 × 10− 9 m2K/W respectively; those of Al2O3 were found to be 1.56 W/m·K and 4.3 × 10− 9 m2K/W.
Published: 2017
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38. Nanostructured Semiconductors

Author: Fabrizio Cleri, Pierre-Olivier Chapuis, THEODORA KYRATSI, Panagiotis Grammatikopoulos, Joseph Kioseoglou, Jean-Marie Bluet, Konstantinos Termentzidis, Yaroslav Beltukov, Mykola Isaiev, Vladimir Lysenko, Evelyne Martin, and Rodolphe Vaillon
Subjects: 010302 applied physics, Semiconductor, Materials science, business.industry, 0103 physical sciences, Thermal, Optoelectronics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 0210 nano-technology, business, 01 natural sciences
Published: 2017
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39. Microelectronics thin films and boundaries characterized by local electro-thermal measurements

Author: Sebastien Gallois-Garreignot, Pierre-Olivier Chapuis, Axel Pic, Vincent Fiori, STMicroelectronics [Crolles] (ST-CROLLES), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Chapuis, Pierre-Olivier
Subjects: 010302 applied physics, Thin layers, Materials science, business.industry, Silicon on insulator, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, Characterization (materials science), Thermal conductivity, Electrical resistance and conductance, Ballistic conduction, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Optoelectronics, Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: Heat dissipation is one of the main challenges faced by microelectronics due to the increase of integration density. From Silicon-On-Insulator (SOI) technology to 3D-stacked technologies, accurate thermal models are needed to quantify the thermal performances of new devices/packages. Several materials (SiO 2 , SiN) and thicknesses (from 30 to 540 nm), typically used in the advanced-interconnect levels of microelectronics, are thermally characterized in order to account for heat transport phenomena linked to thermal boundary resistances and ballistic conduction. A mid-term goal is to develop a large library of effective thermal conductivities of materials used in microelectronics. To measure thin-film thermal conductivities, we assess nanometer-scale tip Scanning Thermal Microscopy (SThM), a technique based on atomic force microscopy, where a self-heated electrical resistance is added at the probe apex. To analyze the experimental data, finite-element simulations of the probe-sample interaction are performed in order to reproduce numerically the experiments. SThM technique can be more sensitive to contact conductances than to effective thermal conductivities, even for samples with thin layers of SiN and SiO 2 . Additional characterization of the tip-sample contact should provide a better estimation of conductivities.
Published: 2017
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40. Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

Author: Pierre-Olivier Chapuis, Jean-Marie Bluet, A.M. Massoud, Valeria Lacatena, Maciej Haras, Jean-François Robillard, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: Scanning thermal microscopy, Materials science, Physics and Astronomy (miscellaneous), Silicon, Thin films, Oxide, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Conductivity, 01 natural sciences, chemistry.chemical_compound, Thermal conductivity, 0103 physical sciences, Thermodynamic states and processes, Composite material, Thermal analysis, Thermal transport, 010302 applied physics, Oxides, 021001 nanoscience & nanotechnology, Thermal conduction, Temperature metrology, Membrane, chemistry, Chemical elements, Contact impedance, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Nanoparticles, 0210 nano-technology
Abstract: International audience; By thermally characterizing nanometer-thin suspended silicon membranes with various micrometric lengths in ambient conditions, we determine simultaneously the spatial resolution of our Wollaston-probe scanning thermal microscopy experiment, which probes an area of (285 nm)2, and the effective thermal conductivity of the membranes of 40 W.m-1.K-1. This value is smaller thanthe in-plane thermal conductivity measured using other techniques in vacuum (60 W.m-1.K-1), revealing that both cross-plane and in-plane heat conduction are strongly affected by the native oxide in ambient conditions. This work also underlines that high-thermal conductivity samples can be characterized by scanning thermal microscopy when micro-patterned.
Published: 2017
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41. Indium antimonide photovoltaic cells for near-field thermophotovoltaics

Author: Dilek Cakiroglu, Christophe Lucchesi, Axel Evirgen, Rodolphe Vaillon, Jean-Philippe Perez, Thierry Taliercio, Eric Tournié, Pierre-Olivier Chapuis, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, and Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE)
Subjects: thermophotovoltaics, Materials science, MBE, Maximum power principle, Passivation, InSb, 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, chemistry.chemical_compound, Stack (abstract data type), passivation, Renewable Energy, Sustainability and the Environment, business.industry, Indium antimonide, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Photovoltaic system, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Thermophotovoltaic, Optoelectronics, 0210 nano-technology, business, Voltage, Molecular beam epitaxy
Abstract: International audience; Indium antimonide photovoltaic cells are specifically designed and fabricated for use in a near-field thermophotovoltaic device demonstrator. The optimum conditions for growing the p-n junction stack of the cell by means of solid-source molecular beam epitaxy are investigated. Then processing of circular micron-sized mesa structures, including passivation of the side walls, is described. The resulting photovoltaic cells, cooled down to around 77 K in order to operate optimally, exhibit excellent performances in the dark and under far-field illumination by thermal sources in the [600-1000] °C temperature range. A short-circuit current beyond 10 µA, open-circuit voltage reaching almost 85 mV, fill factor of 0.64 and electrical power at the maximum power point larger than 0.5 W are measured for the cell with the largest mesa diameter under the highest illumination. These results demonstrate that these photovoltaic cells will be suitable for measuring a near-field enhancement of the generated electrical power.
Published: 2019
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42. Calibration methodologies for scanning thermal microscopy

Author: Jean-Marie Bluet, Eloïse Guen, David Renahy, Mouhannad Massoud, Severine Gomes, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and CETHIL, Laboratoire
Subjects: 010302 applied physics, Microprobe, Materials science, business.industry, Resolution (electron density), Nanoprobe, Nanotechnology, 02 engineering and technology, Scanning thermal microscopy, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Thermal conductivity, 0103 physical sciences, Heat transfer, Calibration, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: This work analyses the heat transfer between various scanning thermal microscopy (SThM) probes and samples. In order to perform quantitative measurements with SThM techniques, we have developed well-established and reproducible calibration methodologies. We present here two approaches of the SThM measurement: one to measure thermal conductivity of solid materials with a Wollaston SThM microprobe and a second one to evaluate phase transition temperatures of polymeric materials with a silicon low-doped nanoprobe. Based on the comparison of experimental data and modeling results, we have estimated the local resolution of the microprobe to be associated to a radius of 300 nm. Concerning the nanoprobe, we have demonstrated the strong dependence of measurement on sample topography and roughness.
Published: 2016

43. Thermal transport phenomena beyond the diffusive regime

Author: Carolina Abs da Cruz, Pierre-Olivier Chapuis, Elyes Nefzaoui, and T.T. Trang Nghiem
Subjects: Thermal contact conductance, Materials science, Condensed matter physics, Thermal resistance, Thermal contact, 02 engineering and technology, 021001 nanoscience & nanotechnology, Thermal conduction, Thermal diffusivity, 01 natural sciences, Thermal conductivity, Heat flux, 0103 physical sciences, Heat transfer, 010306 general physics, 0210 nano-technology
Abstract: Heat conduction in semiconductors is mediated by thermally-excited phonons. When dimensions smaller than the mean free path are involved, nondiffusive heat conduction arises. In addition, surface effects related to thermal boundary resistances become significant when the dimensions of the considered media decrease. These two phenomena significantly alter thermal transport in comparison to predictions made with standard heat diffusion and result in larger temperature levels at the heat source, which can be detrimental for electronics devices. We tackle few examples where these effects are observed. By using the Boltzmann Transport Equation (BTE) for phonons or approximated solutions, we show that effective cross-plane thermal conductivity reduction takes place. We then present results of heat conduction from a metallic line of nanometer-scale width towards a flat bulk. We show that 2D ballistic heat conduction takes place and that a ballistic reduction factor associated to the phonon rarefaction effect should be included. The dissipated heat fluxes are reduced in comparison to the Fourier prediction. The consequence is that strong hot spots may arise. We then analyze the effect of surface imperfect transmission in thermal boundary resistance and introduce a method based on acoustics to compute it. We show that confinement and imperfect transmission lead to similar reduction of the effective thermal conductivity.
Published: 2016
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44. Radial dependence of thermal transport in silicon nanowires

Author: Pierre-Olivier Chapuis, David Lacroix, Maxime Verdier, Konstantinos Termentzidis, Yang Han, Laboratoire Énergies et Mécanique Théorique et Appliquée (LEMTA ), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Nanjing University (NJU), Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, IMPACT N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)
Subjects: Materials science, Condensed matter physics, Phonon density of states, Monte Carlo method, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, 01 natural sciences, Atomic and Molecular Physics, and Optics, Molecular dynamics, Thermal transport, Thermal conductivity, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], General Materials Science, 010306 general physics, 0210 nano-technology, Silicon nanowires, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018
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45. Spectral and total temperature-dependent emissivity of few-layer structures on a metallic substrate

Author: Etienne Blandre, Rodolphe Vaillon, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, business.industry, Astrophysics::High Energy Astrophysical Phenomena, Physics::Optics, Astrophysics::Cosmology and Extragalactic Astrophysics, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, Optics, 0103 physical sciences, Emissivity, Radiative transfer, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Optoelectronics, Thin film, 010306 general physics, 0210 nano-technology, business, Layer (electronics), Refractive index, Order of magnitude, ComputingMilieux_MISCELLANEOUS, Photonic crystal
Abstract: We investigate the thermal radiative emission of few-layer structures deposited on a metallic substrate and its dependence on temperature with the Fluctuational Electrodynamics approach. We highlight the impact of the variations of the optical properties of metallic layers on their temperature-dependent emissivity. Fabry-Pérot spectral selection involving at most two transparent layers and one thin reflective layer leads to well-defined peaks and to the amplification of the substrate emission. For a single Fabry-Pérot layer on a reflective substrate, an optimal thickness that maximizes the emissivity of the structure can be determined at each temperature. A thin lossy layer deposited on the previous structure can enhance interference phenomena, and the analysis of the participation of each layer to the emission shows that the thin layer is the main source of emission. Eventually, we investigate a system with two Fabry-Pérot layers and a metallic thin layer, and we show that an optimal architecture can be found. The total hemispherical emissivity can be increased by one order of magnitude compared to the substrate emissivity.
Published: 2016
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46. Phononic thermal resistance due to a finite periodic array of nano-scatterers

Author: Pierre-Olivier Chapuis, T. T. Trang Nghiêm, Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, INSA BQR MaNaTherm, and ANR-11-PDOC-0024,nanoHEAT,Mécanismes des transferts de chaleur à l'échelle nanométrique et optimisation(2011)
Subjects: Diffraction, Materials science, Phonon, Kapitza resistance, acoustic phonons, Thermal resistance, FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, phononics, 01 natural sciences, symbols.namesake, Optics, Thermal conductivity, 63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials, 05.60.Cd Classical transport, 65.90.+i Other topics in thermal properties of condensed matter, 44.05.+e Analytical and numerical techniques (in Heat conduction), Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, phononic crystal, Interfacial thermal resistance, 010306 general physics, [PHYS.MECA.VIBR]Physics [physics]/Mechanics [physics]/Vibrations [physics.class-ph], Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Scattering, thermal resistance, 021001 nanoscience & nanotechnology, Computational physics, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph], Fourier transform, Reciprocity (electromagnetism), thermal phonons, symbols, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], 0210 nano-technology, business, finite array
Abstract: The wave property of phonons is employed to explore the thermal transport across a finite periodic array of nano-scatterers such as circular and triangular holes. As thermal phonons are generated in all directions, we study their transmission through a single array for both normal and oblique incidences, using a linear dispersionless time-dependent acoustic frame in a two-dimensional system. Roughness effects can be directly considered within the computations without relying on approximate analytical formulae. Analysis by spatio-temporal Fourier transform allows us to observe the diffraction effects and the conversion of polarization. Frequency-dependent energy transmission coefficients are computed for symmetric and asymmetric objects that are both subject to reciprocity. We demonstrate that the phononic array acts as an efficient thermal barrier by applying the theory of thermal boundary (Kapitza) resistances to arrays of smooth scattering holes in silicon for an exemplifying periodicity of 10 nm in the 5–100 K temperature range. It is observed that the associated thermal conductance has the same temperature dependence as that without phononic filtering.
Published: 2016
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47. Temperature Study of Sub-Micrometric ICs by Scanning Thermal Microscopy

Author: F. Nepveu, Bernard Cretin, Séverine Gomès, Pascal Vairac, Sebastian Volz, N. Trannoy, Benoit Charlot, Pierre-Olivier Chapuis, Stefan Dilhaire, and Gilles Tessier
Subjects: 010302 applied physics, Resistive touchscreen, Microscope, Materials science, Passivation, business.industry, 02 engineering and technology, Scanning thermal microscopy, Integrated circuit, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, Electronic, Optical and Magnetic Materials, law.invention, Scanning probe microscopy, law, 0103 physical sciences, Microscopy, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract: Surface temperature measurements were performed with a scanning thermal microscope mounted with a thermoresistive wire probe of micrometric size. A CMOS device was designed with arrays of resistive lines 0.35 mum in width. The array periods are 0.8 mum and 10 mum to study the spatial resolution of the SThM. Integrated circuits (ICs) with passivation layers of micrometric and nanometric thicknesses were tested. To enhance signal-to-noise ratio, the resistive lines were heated with an ac current. The passivation layer of nanometric thickness allows us to distinguish the lines when the array period is 10 mum. The results raise the difficulties of the SThM measurement due to the design and the topography of ICs on one hand and the size of the thermal probe on the other hand.
Published: 2007
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48. Optimizing radiative heat transfer in few-layer structures as a function of temperature

Author: Etienne Blandre, Pierre-Olivier Chapuis, Rodolphe Vaillon, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and CETHIL, Laboratoire
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: International audience
Published: 2015

49. Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators

Author: Olivier Dupré, Etienne Blandre, Michael P. Bernardi, Pierre Olivier Chapuis, Rodolphe Vaillon, Mathieu Francoeur, University of Utah, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, FOS: Physical sciences, chemistry.chemical_element, 02 engineering and technology, Tungsten, 01 natural sciences, 7. Clean energy, Article, chemistry.chemical_compound, 0103 physical sciences, Thermal, Radiative transfer, 010306 general physics, Absorption (electromagnetic radiation), Condensed Matter - Materials Science, Multidisciplinary, business.industry, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Gallium antimonide, Electricity generation, chemistry, Thermophotovoltaic, Radiator (engine cooling), [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Optoelectronics, 0210 nano-technology, business
Abstract: The impacts of radiative, electrical and thermal losses on the power output enhancement of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten emitter, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the absorption bandgap. In a nano-TPV power generator cooled by convection with a fluid at 293 K and a heat transfer coefficient of 10^4 Wm^-2K^-1, power output enhancements of 4.69 and 1.89 are obtained for the tungsten and Drude radiators, respectively, when a realistic vacuum gap thickness of 100 nm is considered. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output is determined. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses.
Published: 2015
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50. Chapter 9. Scanning Thermal Microscopy

Author: Ali Assy, Pierre-Olivier Chapuis, and Séverine Gomès
Subjects: 010302 applied physics, Materials science, Nanotechnology, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, Metrology, Characterization (materials science), Scanning probe microscopy, 0103 physical sciences, Thermal, 0210 nano-technology, Nanoscopic scale, Image resolution, Heat flow
Abstract: Scanning Thermal Microscopy (SThM) allows nanoscale temperature and heat flow measurements as well as thermal characterization of materials. This chapter focuses on fundamentals and applications of SThM methods. It reviews the main Scanning Probe Microscopy techniques developed for thermal imaging with nanoscale spatial resolution and presents selected SThM applications. After reviewing the fundamentals of thermal metrology by contact, it describes the approaches currently used to calibrate SThM probes. In many cases, the link between the nominal measured signal and the investigated parameter is not yet fully understood, due to the complexity of the micro-/nanoscale interaction between the probe and the sample. Special attention is given to this interaction, which conditions the tip–sample interface temperature. Some examples of the main applications of SThM are presented. Finally, future challenges and opportunities for SThM are discussed.
Published: 2015
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