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415 results on '"Pintilie I"'

1. OH$^-$ ions can reduce the iodide migration in MAPI

Author

Brophy, R. E., Kateb, M., Ghitiu, I., Filipoiu, N., Torfason, K., Svavarsson, H. G., Nemnes, G. A., Pintilie, I., and Manolescu, A.

Subjects
Condensed Matter - Materials Science
Abstract

One of the main degradation mechanisms of methylammonium lead iodine (MAPI), which is an important material for perovskite based solar cells, is the migration of iodide ions. It is believed that this phenomenon is in fact dominated by the diffusion of iodide vacancies. In this paper, we suggest that the addition of a small amount of OH$^-$ ions can help suppress the migration of iodide and increase the overall stability of the material. Through the use of molecular dynamics simulations, we show that the OH$^-$ ions can bind to the positively charged iodide vacancies and can block the access of the negative iodide ions into those vacancies., Comment: 2023 International Semiconductor Conference (CAS), Sinaia, Romania

Published
2024
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5. Bistability of the BiOi complex and its implications on evaluating the acceptor removal

Author

Besleaga, C., Kuncser, A., Nitescu, A., Kramberger, G., Moll, M., and Pintilie, I.

Subjects
Condensed Matter - Materials Science
Abstract

The dependencies of the B$_{i}$O$_{i}$ defect concentration on doping, irradiation fluence and particle type in p-type silicon diodes have been investigated. We evidenced that large data scattering occurs for fluences above $10^{12}$ 1 MeV neutrons/cm$^2$, becoming significant larger for higher fluences. We show that the B$_{i}$O$_{i}$ defect is metastable, with two configurations A and B, of which only A is detected by Deep Level Transient Spectroscopy and Thermally Stimulated Currents techniques. The defect's electrical activity is influenced by the inherent variations in ambient and procedural experimental conditions, resulting not only in a large scattering of the results coming from the same type of measurement but making any correlation between different types of experiments difficult. It is evidenced that the variations in [B$_{i}$O$_{i}^\mathrm{A}$] are triggered by subjecting the samples to an excess of carriers, by either heating or an inherent short exposure to ambient light when manipulating the samples prior to experiments. It causes $\approx$7h variations in both, the [B$_{i}$O$_{i}^\mathrm{A}$] and in the effective space charge. The analyses of structural damage in a diode irradiated with 10$^{19}$ 1 MeV neutrons/cm$^2$ revealed that the Si structure remains crystalline and vacancies and interstitials organize in parallel tracks normal to the Si-SiO$_{2}$ interface.

Published
2021
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9. Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

Author

Schwandt, J., Fretwurst, E., Klanner, R., Pintilie, I., and Zhang, J.

Subjects
Physics - Instrumentation and Detectors
Abstract

The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. One of the detector systems under development for the XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which consists of a pixel array with readout ASICs bump-bonded to a silicon sensor with pixels of 200 {\mu}m \times 200 {\mu}m. The particular requirements for the detector are a high dynamic range (0, 1 up to 10E5 12 keV photons/XFEL-pulse), a fast read-out and radiation tolerance up to doses of 1 GGy of 12 keV X-rays for 3 years of operation. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the SiO2 layer and interface traps at the Si-SiO2 interface will build up. As function of the 12 keV X-ray dose the microscopic defects in test structures and the macro- scopic electrical properties of segmented sensors have been investigated. From the test structures the oxide charge density, the density of interface traps and their properties as function of dose have been determined. It is found that both saturate (and even decrease) for doses above a few MGy. For segmented sensors surface damage introduced by the X-rays increases the full depletion voltage, the surface leakage current and the inter-pixel capacitance. In addition an electron accumulation layer forms at the Si-SiO2 interface which increases with dose and decreases with applied voltage. Using TCAD simulations with the dose dependent damage parameters obtained from the test struc- tures the results of the measurements can be reproduced. This allows the optimization of the sensor design for the XFEL requirements.

Published
2011
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11. Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

Author

Fretwurst, E., Lindstrom, G., Pintilie, I., and Stahl, J.

Subjects
Physics - Instrumentation and Detectors
Abstract

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising results are shown. The other three papers deal with gamma induced damage including also defects introduced either by processing steps or being inherent to the as grown silicon. However the focus is on measurements after gamma irradiation in a wide dose range. Both the changes in detector properties and defect characterisations have been studied. For the first time it is shown that in contrast to a standard process oxygenated silicon detectors withstand an irradiation dose of up to 1 Grad with only minor deterioration. Also it is shown for the first time that in this case the detector properties can directly be explained by the damage induced point defects. This 1:1 correlation is extremely promising for all future defect engineering work., Comment: 35 pages, 41 figures, To be published in Nuclear Instruments and Methods A

Published
2002

16. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)

Author

Pintilie, I., Pintilie, L., Filip, L. D., Nistor, L. C., Ghica, C., Hull, Robert, Series editor, Jagadish, Chennupati, Series editor, Osgood, Richard M., Series editor, Parisi, Jürgen, Series editor, Seong, Tae-Yeon, Series editor, Uchida, Shin-ichi, Series editor, Wang, Zhiming M., Series editor, Kuncser, Victor, editor, and Miu, Lucica, editor

Published
2014
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20. Partial replacement of Pb2+ in MAPbI2.6Cl0.4 perovskite films and their photovoltaic performance.

Author

Derbali, S., Nouneh, K., Leonat, L. N., Stancu, V., Tomulescu, A. G., Galca, A. C., Ebn Touhami, M., Pintilie, I., and Florea, M.

Abstract

Replacing lead atoms in halide perovskite materials is of significant importance for the development of environmentally friendly perovskite solar cells. In this paper, we investigated the effect of doping the MAPbI2.6Cl0.4 hybrid perovskite (MA—methyl ammonium) with non-toxic elements, such as alkaline earth metal ions (Mg2+) and transition metal ions (Zn2+). The structural, morphological, and optical properties of the prepared samples were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV–Vis. spectroscopy. Finally, the doped films were used as photoactive layers in solar devices in order to evaluate their photovoltaic performance. Zn proved to be more appropriate to replace partially Pb and films with higher quality were obtained. As a result, the MAPb1−xZnxI2.6Cl0.4 based solar cells have demonstrated a slight improvement of the photovoltaic performances, resulting in a uniform and narrower PCEs (power conversion efficiency) range, compared to pristine MAPbI2.6Cl0.4 based devices. [ABSTRACT FROM AUTHOR]

Published
2023
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24. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons.

Author

Radu, R., Pintilie, I., Makarenko, L. F., Fretwurst, E., and Lindstroem, G.

Subjects
*MONOENERGETIC radiation, *HEAT treatment, *SILICON, *DETECTORS, *LARGE Hadron Collider, *RADIATION damage
Abstract

This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 × 1014 cm−2 and 6 × 1014 cm−2. After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 °C to 300 °C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 °C, but annealing-out quickly in DOFZ material at temperatures higher than 200 °C , with a high frequency factor of the order of 1013 s−1. Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect. [ABSTRACT FROM AUTHOR]

Published
2018
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25. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen.

Author

Makarenko, L. F., Lastovskii, S. B., Yakushevich, H. S., Moll, M., and Pintilie, I.

Subjects
COMPARATIVE studies, ELECTRIC properties of silicon, DEEP level transient spectroscopy, IRRADIATION, ANNEALING of metals
Abstract

Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation. [ABSTRACT FROM AUTHOR]

Published
2018
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27. The Role of Interface Defect States in n- and p-Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

Author

Boni, G.A. Istrate, C.M. Zacharaki, C. Tsipas, P. Chaitoglou, S. Evangelou, E.K. Dimoulas, A. Pintilie, I. Pintilie, L.

Abstract

The discovery of ferroelectricity in doped HfO2 represents an excellent opportunity to overcome the obstacles in manufacturing reliable ferroelectric field effect transistors (FeFET) for nonvolatile memory applications, considering that HfO2 is compatible with Si and Ge and it is already used in semiconductor industry. The presence of interface defects may have detrimental effects on the operation of FeFETs, so their role is systematically investigated in this study in correlation with the substrate doping. Metal–ferroelectric–semiconductor (MFS) structures are fabricated by depositing Hf0.5Zr0.5O2 (HZO) layers on n-type Ge substrate. Their electric properties are compared with those of MFS structures obtained by depositing HZO on p-type Ge, to study the influence of the doping. It is found that, although the ferroelectric properties of HZO are similar, the capacitance and impedance of the MFS structures behave differently. For n-Ge, the occupation probability of a large number of low-lying interface defect acceptor states, charges the interface negatively which adversely affects the C–V response of the MFS, albeit without harming the ferroelectric (P–V) hysteresis. Although the interface defects do not harm ferroelectricity, they could inhibit inversion in p-type Ge or accumulation in n-type Ge so they should be taken into account when designing Ge FeFET devices. © 2021 Wiley-VCH GmbH

Published
2021

38. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Author

Fretwurst, E., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P.P., Artuso, M., Assouak, S., Avset, B.S., Barabash, L., Barcz, A., Bates, R., Biagi, S.F., Bilei, G.M., Bisello, D., Blue, A., Blumenau, A., Boisvert, V., Bolla, G., Bondarenko, G., Borchi, E., Borrello, L., Bortoletto, D., Boscardin, M., Bosisio, L., Bowcock, T.J.V., Brodbeck, T.J., Broz, J., Bruzzi, M., Brzozowski, A., Buda, M., Buhmann, P., Buttar, C., Campabadal, F., Campbell, D., Candelori, A., Casse, G., Cavallini, A., Charron, S., Chilingarov, A., Chren, D., Cindro, V., Collins, P., Coluccia, R., Contarato, D., Coutinho, J., Creanza, D., Cunningham, L., Dalla Betta, G.-F., Dawson, I., de Boer, W., De Palma, M., Demina, R., Dervan, P., Dittongo, S., Dolezal, Z., Dolgolenko, A., Eberlein, T., Eremin, V., Fall, C., Fasolo, F., Ferbel, T., Fizzotti, F., Fleta, C., Focardi, E., Forton, E., Garcia, C., Garcia-Navarro, J.E., Gaubas, E., Genest, M.-H., Gill, K.A., Giolo, K., Glaser, M., Goessling, C., Golovine, V., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell Bates, A., Grégoire, G., Gregori, P., Grigoriev, E., Grillo, A.A., Groza, A., Guskov, J., Haddad, L., Härkönen, J., Hauler, F., Hoeferkamp, M., Hönniger, F., Horazdovsky, T., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Hughes, G., Ilyashenko, I., Irmscher, K., Ivanov, A., Jarasiunas, K., Johansen, K.M.H., Jones, B.K., Jones, R., Joram, C., Jungermann, L., Kalinina, E., Kaminski, P., Karpenko, A., Karpov, A., Kazlauskiene, V., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Klaiber-Lodewigs, J., Klingenberg, R., Kodys, P., Kohout, Z., Korjenevski, S., Koski, M., Kozlowski, R., Kozodaev, M., Kramberger, G., Krasel, O., Kuznetsov, A., Kwan, S., Lagomarsino, S., Lassila-Perini, K., Lastovetsky, V., Latino, G., Lazanu, I., Lazanu, S., Lebedev, A., Lebel, C., Leinonen, K., Leroy, C., Li, Z., Lindström, G., Linhart, V., Litovchenko, P., Litovchenko, A., Lo Giudice, A., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Makarenko, L.F., Mandić, I., Manfredotti, C., Manna, N., Marti i Garcia, S., Marunko, S., Mathieson, K., Melone, J., Menichelli, D., Messineo, A., Metcalfe, J., Miglio, S., Mikuž, M., Miyamoto, J., Moll, M., Monakhov, E., Moscatelli, F., Naoumov, D., Nossarzewska-Orlowska, E., Nysten, J., Olivero, P., Oshea, V., Palviainen, T., Paolini, C., Parkes, C., Passeri, D., Pein, U., Pellegrini, G., Perera, L., Petasecca, M., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, I., Pintilie, L., Polivtsev, L., Polozov, P., Popa, A., Popule, J., Pospisil, S., Pozza, A., Radicci, V., Rafí, J.M., Rando, R., Roeder, R., Rohe, T., Ronchin, S., Rott, C., Roy, A., Ruzin, A., Sadrozinski, H.F.W., Sakalauskas, S., Scaringella, M., Schiavulli, L., Schnetzer, S., Schumm, B., Sciortino, S., Scorzoni, A., Segneri, G., Seidel, S., Seiden, A., Sellberg, G., Sellin, P., Sentenac, D., Shipsey, I., Sicho, P., Sloan, T., Solar, M., Son, S., Sopko, B., Sopko, V., Spencer, N., Stahl, J., Stolze, D., Stone, R., Storasta, J., Strokan, N., Sudzius, M., Surma, B., Suvorov, A., Svensson, B.G., Tipton, P., Tomasek, M., Tsvetkov, A., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Uher, J., Ullán, M., Vaitkus, J.V., Velthuis, J., Verbitskaya, E., Vrba, V., Wagner, G., Wilhelm, I., Worm, S., Wright, V., Wunstorf, R., Yiuri, Y., Zabierowski, P., Zaluzhny, A., Zavrtanik, M., Zen, M., Zhukov, V., and Zorzi, N.

Published
2005
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42. Development of radiation tolerant semiconductor detectors for the Super-LHC

Author

Moll, M., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P.P., Artuso, M., Assouak, S., Avset, B.S., Barabash, L., Barcz, A., Bates, R., Biagi, S.F., Bilei, G.M., Bisello, D., Blue, A., Blumenau, A., Boisvert, V., Bolla, G., Bondarenko, G., Borchi, E., Borrello, L., Bortoletto, D., Boscardin, M., Bosisio, L., Bowcock, T.J.V., Brodbeck, T.J., Broz, J., Bruzzi, M., Brzozowski, A., Buda, M., Buhmann, P., Buttar, C., Campabadal, F., Campbell, D., Candelori, A., Casse, G., Cavallini, A., Charron, S., Chilingarov, A., Chren, D., Cindro, V., Collins, P., Coluccia, R., Contarato, D., Coutinho, J., Creanza, D., Cunningham, W., Dalla Betta, G. -F., Dawson, I., de Boer, W., De Palma, M., Demina, R., Dervan, P., Dittongo, S., Dolezal, Z., Dolgolenko, A., Eberlein, T., Eremin, V., Fall, C., Fasolo, F., Fizzotti, F., Fleta, C., Focardi, E., Forton, E., Fretwurst, E., Garcia, C., Garcia-Navarro, J.E., Gaubas, E., Genest, M. -H., Gill, K.A., Giolo, K., Glaser, M., Goessling, C., Golovine, V., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell Bates, A., Grégoire, G., Gregori, P., Grigoriev, E., Grillo, A.A., Groza, A., Guskov, J., Haddad, L., Härkönen, J., Hauler, F., Hoeferkamp, M., Hönniger, F., Horazdovsky, T., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Hughes, G., Ilyashenko, I., Irmscher, K., Ivanov, A., Jarasiunas, K., Johansen, K.M.H., Jones, B.K., Jones, R., Joram, C., Jungermann, L., Kalinina, E., Kaminski, P., Karpenko, A., Karpov, A., Kazlauskiene, V., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Klaiber-Lodewigs, J., Klingenberg, R., Kodys, P., Kohout, Z., Korjenevski, S., Koski, M., Kozlowski, R., Kozodaev, M., Kramberger, G., Krasel, O., Kuznetsov, A., Kwan, S., Lagomarsino, S., Lassila-Perini, K., Lastovetsky, V., Latino, G., Lazanu, S., Lazanu, I., Lebedev, A., Lebel, C., Leinonen, K., Leroy, C., Li, Z., Lindström, G., Linhart, V., Litovchenko, A., Litovchenko, P., Lo Giudice, A., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Makarenko, L.F., Mandić, I., Manfredotti, C., Manna, N., Marti i Garcia, S., Marunko, S., Mathieson, K., Melone, J., Menichelli, D., Messineo, A., Metcalfe, J., Miglio, S., Mikuž, M., Miyamoto, J., Monakhov, E., Moscatelli, F., Naoumov, D., Nossarzewska-Orlowska, E., Nysten, J., Olivero, P., OShea, V., Palviainen, T., Paolini, C., Parkes, C., Passeri, D., Pein, U., Pellegrini, G., Perera, L., Petasecca, M., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, I., Pintilie, L., Polivtsev, L., Polozov, P., Popa, A., Popule, J., Pospisil, S., Pozza, A., Radicci, V., Rafí, J.M., Rando, R., Roeder, R., Rohe, T., Ronchin, S., Rott, C., Roy, A., Ruzin, A., Sadrozinski, H.F.W., Sakalauskas, S., Scaringella, M., Schiavulli, L., Schnetzer, S., Schumm, B., Sciortino, S., Scorzoni, A., Segneri, G., Seidel, S., Seiden, A., Sellberg, G., Sellin, P., Sentenac, D., Shipsey, I., Sicho, P., Sloan, T., Solar, M., Son, S., Sopko, B., Sopko, V., Spencer, N., Stahl, J., Stolze, D., Stone, R., Storasta, J., Strokan, N., Sudzius, M., Surma, B., Suvorov, A., Svensson, B.G., Tipton, P., Tomasek, M., Tsvetkov, A., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Uher, J., Ullán, M., Vaitkus, J.V., Velthuis, J., Verbitskaya, E., Vrba, V., Wagner, G., Wilhelm, I., Worm, S., Wright, V., Wunstorf, R., Yiuri, Y., Zabierowski, P., Zaluzhny, A., Zavrtanik, M., Zen, M., Zhukov, V., and Zorzi, N.

Published
2005
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43. Radiation-hard semiconductor detectors for SuperLHC

Author

Bruzzi, M., Adey, J., Al-Ajili, A., Alexandrov, P., Alfieri, G., Allport, P.P., Andreazza, A., Artuso, M., Assouak, S., Avset, B.S., Barabash, L., Baranova, E., Barcz, A., Basile, A., Bates, R., Belova, N., Biagi, S.F., Bilei, G.M., Bisello, D., Blue, A., Blumenau, A., Boisvert, V., Bolla, G., Bondarenko, G., Borchi, E., Borrello, L., Bortoletto, D., Boscardin, M., Bosisio, L., V. Bowcock, T.J., Brodbeck, T.J., Broz, J., Brukhanov, A., Brzozowski, A., Buda, M., Buhmann, P., Buttar, C., Campabadal, F., Campbell, D., Candelori, A., Casse, G., Cavallini, A., Chilingarov, A., Chren, D., Cindro, V., Citterio, M., Collins, P., Coluccia, R., Contarato, D., Coutinho, J., Creanza, D., Cunningham, W., Cvetkov, V., Dalla Betta, G.-F., Davies, G., Dawson, I., de Boer, W., De Palma, M., Demina, R., Dervan, P., Dierlamm, A., Dittongo, S., Dobrzanski, L., Dolezal, Z., Dolgolenko, A., Eberlein, T., Eremin, V., Fall, C., Fasolo, F., Ferbel, T., Fizzotti, F., Fleta, C., Focardi, E., Forton, E., Franchenko, S., Fretwurst, E., Gamaz, F., Garcia, C., Garcia-Navarro, J.E., Gaubas, E., Genest, M.-H., Gill, K.A., Giolo, K., Glaser, M., Goessling, C., Golovine, V., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell, A., Grégoire, G., Gregori, P., Grigoriev, E., Grigson, C., Grillo, A., Groza, A., Guskov, J., Haddad, L., Härkönen, J., Harding, R., Hauler, F., Hayama, S., Hoeferkamp, M., Hönniger, F., Horazdovsky, T., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Hruban, A., Hughes, G., Ilyashenko, I., Irmscher, K., Ivanov, A., Jarasiunas, K., Jin, T., Jones, B.K., Jones, R., Joram, C., Jungermann, L., Kalinina, E., Kaminski, P., Karpenko, A., Karpov, A., Kazlauskiene, V., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Klaiber-Lodewigs, J., Kleverman, M., Klingenberg, R., Kodys, P., Kohout, Z., Korjenevski, S., Kowalik, A., Kozlowski, R., Kozodaev, M., Kramberger, G., Krasel, O., Kuznetsov, A., Kwan, S., Lagomarsino, S., Lari, T., Lassila-Perini, K., Lastovetsky, V., Latino, G., Latushkin, S., Lazanu, S., Lazanu, I., Lebel, C., Leinonen, K., Leroy, C., Li, Z., Lindström, G., Lindstrom, L., Linhart, V., Litovchenko, A., Litovchenko, P., Litvinov, V., Lo Giudice, A., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Mainwood, A., Makarenko, L.F., Mandić, I., Manfredotti, C., Marti i Garcia, S., Marunko, S., Mathieson, K., Mozzanti, A., Melone, J., Menichelli, D., Meroni, C., Messineo, A., Miglio, S., Mikuž, M., Miyamoto, J., Moll, M., Monakhov, E., Moscatelli, F., Murin, L., Nava, F., Naoumov, D., Nossarzewska-Orlowska, E., Nummela, S., Nysten, J., Olivero, P., Oshea, V., Palviainen, T., Paolini, C., Parkes, C., Passeri, D., Pein, U., Pellegrini, G., Perera, L., Petasecca, M., Piatkowski, B., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, I., Pintilie, L., Polivtsev, L., Polozov, P., Popa, A.I., Popule, J., Pospisil, S., Pucker, G., Radicci, V., Rafí, J.M., Ragusa, F., Rahman, M., Rando, R., Roeder, R., Rohe, T., Ronchin, S., Rott, C., Roy, P., Roy, A., Ruzin, A., Ryazanov, A., Sadrozinski, H.F.W., Sakalauskas, S., Scaringella, M., Schiavulli, L., Schnetzer, S., Schumm, B., Sciortino, S., Scorzoni, A., Segneri, G., Seidel, S., Seiden, A., Sellberg, G., Sellin, P., Sentenac, D., Shipsey, I., Sicho, P., Sloan, T., Solar, M., Son, S., Sopko, B., Spencer, N., Stahl, J., Stavitski, I., Stolze, D., Stone, R., Storasta, J., Strokan, N., Strupinski, W., Sudzius, M., Surma, B., Suuronen, J., Suvorov, A., Svensson, B.G., Tipton, P., Tomasek, M., Troncon, C., Tsvetkov, A., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Uher, J., Ullán, M., Vaitkus, J.V., Vanni, P., Velthuis, J., Verzellesi, G., Verbitskaya, E., Vrba, V., Wagner, G., Wilhelm, I., Worm, S., Wright, V., Wunstorf, R., Zabierowski, P., Zaluzhny, A., Zavrtanik, M., Zen, M., Zhukov, V., and Zorzi, N.

Published
2005
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47. Trapping levels in Bi12SiO20 crystals

Author

Petre, D., Pintilie, I., Botila, T., and Ciurea, M.L.

Subjects
Crystals -- Research, Electrooptics -- Materials, Physics
Abstract

Optical charging spectroscopy (OCS) of BSO crystals reveals that traps exist in the 0.2 to 1.1 eV energy range. The number of trapping levels measured from OCS exceeds that from thermally stimulated current method. Polarity changes in the discharging current indicate that trapping levels can function as hole and electron traps. Trapped carrier concentration in deep levels depends exponentially on irradiation temperature.

Published
1994

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