Search

Your search keyword '"Pirogov, E. V."' showing total 43 results
Start Over Author "Pirogov, E. V."
43 results on '"Pirogov, E. V."'

13. Piezoelectric fields and martensitic transition in spontaneously ordered GaInP2/GaAs epi-layers.

Author

Ankudinov, A. V., Bert, N. A., Dunaevskiy, M. S., Galimov, A. I., Kalyuzhnyy, N. A., Mintairov, S. A., Myasoedov, A. V., Pavlov, N. V., Rakhlin, M. V., Salii, R. A., Toropov, A. A., Vlasov, A. S., Pirogov, E. V., Zhukovskyi, M. A., and Mintairov, A. M.

Subjects
SCANNING probe microscopy, OPTICAL measurements, SURFACE potential, ELECTRON microscopy, MICROSCOPY, CRYSTAL lattices
Abstract

The effect of lattice relaxation instability (martensitic transition) on piezoelectric fields (EPE) in spontaneously ordered GaInP2/GaAs epitaxial layers was demonstrated using scanning Kelvin probe microscopy in combination with electron microscopy and optical spectroscopy measurements. The transition manifests itself in the dependence of the surface potential of the epi-layer on the mechanical (cleavage) and thermal (annealing) impacts. This is associated with a switching of the crystal lattice between relaxed and strained martensitic states, corresponding to a change in EPE in the epi-layer. The measured surface potential values (0.2–2.4 V) correspond to EPE within ±100 kV/cm and a strong decrease in |EPE| with increasing layer thickness, indicating the pinning of the Fermi level and piezoelectric doping. Our results open up the prospects for using spontaneously ordered semiconductor alloys to control electronic states in semiconductor nanostructures by controlling their piezoelectric fields. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

16. Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

Author

Seredin, P. V., primary, Kurilo, N. A., additional, Radam, Ali O., additional, Builov, N. S., additional, Goloshchapov, D. L., additional, Ivkov, S. A., additional, Lenshin, A. S., additional, Arsentiev, I. N., additional, Nashchekin, A. V., additional, Sharofldinov, Sh. Sh., additional, Mizerov, A. M., additional, Sobolev, M. S., additional, Pirogov, E. V., additional, and Semeykin, I. V., additional

Published
2023
Full Text
View/download PDF

26. Blazed Diffraction Gratings on Si --- First Results

Author

null Dashkov A. S., null Pirogov E. V., null Shubina K. Yu., null Sharov V. A., null Mokhov D. V., null Berezovskaya T. N., and null Goray L. I.

Abstract

Using direct laser lithography and wet etching of polished vicinal Si(111) wafers, a technology was developed and diffraction gratings 500 grooves/mm with a blaze angle of 4o were fabricated. The manufacturing process of a reflective Si-grating with the triangular profile (sawtooth) can be divided into four main steps: (1) obtaining a pattern of a protective mask for grooves etching; (2) anisotropic etching of grooves in KOH solution; (3) etching to smooth the grating profile and polish the surface of working facets; (4) coating to increase reflectivity. The samples obtained were characterized using scanning electron microscopy and atomic force microscopy methods to determine the shape of the groove profile and roughness: the shape turned out to be close to the ideal triangular, and the RMS roughness was less than 0.3 nm. Using PCGrateTM software and taking into account the measured real groove profile, the diffraction efficiency of gratings operating in classical and conical mounts in soft-X-ray and extreme ultraviolet radiation has been simulated. The obtained efficiency values are close to the record ones for the corresponding spectral range and the Au-coating of the grating. Keywords: diffraction grating, wet etching technology of Si, sawtooth groove profile, AFM, SEM, diffraction efficiency modelling.

Published
2022

27. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs

Author

null Sobolev M. S., null Mizerov A. M., null Pirogov E. V., null Nikitina E. V., null Shubina K. Yu., and null Lazarenko A. A.

Abstract

The article investigates the effect of rapid thermal annealing of ternary GaAs1-xNx/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown. Keywords: dilute nitrides, heterostructures, molecular-beam epitaxy, GaAs, nitrogen.

Published
2022

28. Optimization of triangular-profiled Si-grating fabrication technology for EUV and SXR applications

Author

null Goray L. I., null Sharov V. A., null Nashchekin A. V., null Pirogov E. V., null Shubina K. Yu., null Berezovskaya T. N., and null Mokhov D. V.

Abstract

Anisotropic wet etching of vicinal monocrystalline Si (111)4o wafers was used to obtain blazed gratings that are highly efficient in the soft X-ray (SXR) and extreme ultraviolet (EUV) applications. An improved experimental technology for the fabrication of triangular-grooved Si gratings, both medium-frequency (250 and 500 mm-1) and high-frequency (2500 mm-1) ones, is presented. The stages of forming a Cr-mask for grooves etching, removing Si nubs in order to smooth the profile, and polishing the surface to reduce nanoroughness have been optimized. This paper describes the way of simultaneously (in one process) obtaining a smoothed triangular profile of the Si grating and a polished surface of facets by wet etching. Keywords: diffraction grating, Si wet etching, triangular groove profile, AFM, SEM.

Published
2022

37. Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy.

Author

Goray, L. I., Pirogov, E. V., Sobolev, M. S., Polyakov, N. K., Dashkov, A. S., Svechnikov, M. V., and Bouravleuv, A. D.

Subjects
*X-ray reflectometry, *SYNCHROTRON radiation sources, *EPITAXY, *DOPED semiconductor superlattices, *QUANTUM wells, *MOLECULAR beam epitaxy, *STANDARD deviations
Abstract

Elastically strained supermultiperiod (100–1000 periods) AlGaAs/GaAs superlattices with different doping levels and slightly differing period thicknesses have been investigated. The proposed technique of characterization consisting of combined application of deep X-ray reflectometry based on a rigorous calculation method, as well as the well-known method of high-resolution X-ray reflectometry, has made it possible to investigate 100-period structures with 2-nm-wide Al0.3Ga0.7As barriers and 10-nm-wide GaAs wells and determine with a high accuracy the layer thicknesses and spread of interfaces. This achievement can be considered as a first step in further analysis of thick structures using bright synchrotron radiation source. The difference between the expected and obtained by the proposed method layer thicknesses is several percent, including that for samples with a high doping level (up to 1018 cm–3). All supermultiperiod structures are characterized by sharp interfaces with a standard deviation of about 0.1 nm. Based on the obtained data on the thicknesses, one can accurately determine the layer compositions using high-resolution X-ray diffraction. [ABSTRACT FROM AUTHOR]

Published
2020
Full Text
View/download PDF

42. Super-radiant mode in InAs—monolayer–based Bragg structures

Author

Pozina, G., primary, Kaliteevski, M. A., additional, Nikitina, E. V., additional, Denisov, D. V., additional, Polyakov, N. K., additional, Pirogov, E. V., additional, Goray, L. I., additional, Gubaydullin, A. R., additional, Ivanov, K. A., additional, Kaliteevskaya, N. A., additional, Egorov, A. Yu., additional, and Clark, S. J., additional

Published
2015
Full Text
View/download PDF

43. Optical properties of quaternary GaNAsP semiconductor alloys.

Author

Egorov, A. Yu., Kryzhanovskaya, N. V., Pirogov, E. V., and Pavlov, M. M.

Subjects
OPTICAL properties of semiconductors, MOLECULAR beam epitaxy, PHOTOLUMINESCENCE, SPECTRUM analysis, COMPARATIVE studies, LIQUID nitrogen
Abstract

The optical properties of quaternary GaNAsP semiconductor alloys grown on a GaP (100) substrate surface are studied by photoluminescence spectroscopy in the temperature range 20–300 K and by photoluminescence excitation spectroscopy at liquid-nitrogen temperature. The measurements are carried out for the GaNAsP alloys, for which the nitrogen and arsenic molar fractions x and y range from 0.006 to 0.012 and from 0.00 to 0.18, respectively. A comparative analysis of the data is conducted, and the dependences of the energy position of the photoluminescence peak on the composition of the quaternary alloy are established. From the studies of photoluminescence in the range 20–300 K, it is found that the temperature dependence of the position of the photoluminescence peak substantially differs from the behavior described by Varshni’s expression. [ABSTRACT FROM AUTHOR]

Published
2010
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results