43 results on '"Pirogov, E. V."'
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2. Blazed Diffraction Gratings on Si—First Results
3. Blazed Silicon Gratings for Soft X-Ray and Extreme Ultraviolet Radiation: the Effect of Groove Profile Shape and Random Roughness on the Diffraction Efficiency
4. Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs
5. Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN
6. Silicon Echelles for Soft X-Ray and Extreme UV Radiation: Influence of the Camber of the Reflective Facet on the Diffraction Efficiency
7. Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice
8. Fabrication and Soft-X-Ray and EUV Range Testing of Au- and Multilayer Mo/Si-Coated Diffraction Gratings with High-Order Blaze
9. High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source
10. Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy
11. Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy
12. Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
13. Piezoelectric fields and martensitic transition in spontaneously ordered GaInP2/GaAs epi-layers.
14. Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
15. Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2-2.6 um
16. Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
17. GaAs/InGaAsN heterostructures for multi-junction solar cells
18. MBE growth of GaP on a Si substrate
19. Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy
20. Creation of effective sources of white radiation based on GaP(As,N) on silicon substrates
21. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
22. The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
23. Separation of AlN layers from silicon substrates by KOH etching
24. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
25. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
26. Blazed Diffraction Gratings on Si --- First Results
27. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
28. Optimization of triangular-profiled Si-grating fabrication technology for EUV and SXR applications
29. Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions
30. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix
31. Optical properties of quaternary GaN x As y P1 − x − y semiconductor alloys
32. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures
33. Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates
34. Optical properties of GaN x As y P1−x−y semiconductor quaternary solid solutions
35. Monolith GaAsP/Si dual-junction solar cells grown by MBE
36. Doping of GaP layers grown by molecular-beam epitaxy on silicon substrates
37. Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy.
38. The effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates
39. Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy
40. Epitaxial growth and investigation of GaP/GaP(As)N heterostructures on Si (100) 40 substrates
41. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
42. Super-radiant mode in InAs—monolayer–based Bragg structures
43. Optical properties of quaternary GaNAsP semiconductor alloys.
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