Search

A new proposed Metal-Insulator-Metal (MIM) serie capacitor model for Monolithic Microwave Integrated Circuit is presented. The MIM serie capacitor model covers the frequency range up to 40 GHz for millimeter-wave circuit design application. The parasitic elements of model are extracted by parameters fitting optimization between the measured S-parameters and model simulated result. The relationship between the optimized parasitic element values and the dimension data of capacitor structure can be expressed.

This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors (HEMTs) at different numbers of gate fingers. Scalable small-signal models are extracted to analyze the relationship between each model's parameters and the number of device's gate fingers. The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz. The dependency between the number of device's gate fingers and load-pull characterization is presented.

An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current–voltage (I–V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = −3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented.