46 results on '"Portnoi, E. L."'
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2. Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer
3. Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range
4. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
5. Analysis of Nonlinear Optical-Electromagnetic Interactions in Ultrafast Mode-Locked Laser Diodes
6. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice
7. New Ideology of All-Optical Microwave Systems Based on the Use of Semiconductor Laser as a Down-Converter
8. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect
9. The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence
10. Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
11. Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field
12. Features of mode locking in laser with quantum well in broad waveguide layer
13. Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature
14. Suppression of Q-switching instabilities in broadened-waveguide monolithic mode-locked laser diodes
15. RF linewidth in passively mode locked quantum well lasers
16. Passive mode-locked laser based on quantum dot superlattice
17. Polarization dependence of the stark shift in the absorption edge of InGaAs/GaAs quantum dot heterostructures
18. Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation
19. MODE-LOCKED DIODE LASERS FOR MICROWAVE OPTOELECTRONIC APPLICATIONS
20. ‘On-wafer’ surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53–1.55 μm) laser diodes
21. Visualization of the ion projected range region in GaAs irradiated with argon ions
22. Alx Ga1-x As-GaAs Heterojunctions
23. Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions
24. Phase effects in a semiconductor laser with diffraction extraction of radiation
25. Q-switching in single-heterojunction lasers and generation of ultrahigh-power picosecond optical pulses
26. Mode-locking and Q-switching in 1.06 μm two-sectional QW lasers due to stark effect
27. Semiconductor heterostructure lasers with distributed feedback
28. Preparation and Investigation of Epitaxial Layers of AlxGta^As solid Solutions and of Heterojunctions in the AlAs—GaAs system
29. Analysis of Nonlinear Optical-Electromagnetic Interactions in Ultrafast Mode-Locked Laser Diodes
30. Wannier-Stark Effect in InAs∕GaAs Quantum-Dot Superlattice
31. Analysis of symmetric and asymmetric broadened-mode laser structures for short and ultrashort optical pulse generation
32. Tunnel coupling in an ensemble of vertically aligned quantum dots at room temperature
33. Broad-waveguide passively mode-locked laser diodes for stable short pulse generation
34. Simple and effective algorithm of inorganic resist As 2 S 3 development simulation
35. Periodical structures with antireflective and diffraction properties
36. Broad-waveguide passively mode-locked laser diodes for stable short pulse generation.
37. Simple and effective algorithm of inorganic resist As2S3 development simulation.
38. Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs
39. Mode-Locked Diode Lasers for Microwave Optoelectronic Applications
40. Soliton generation employing passively mode-locked laser diode and erbium-fiber amplifier
41. Passive mode locking of a multistripe single quantum well GaAs laser diode with an intracavity saturable absorber
42. NANOSCALE PERIODICAL STRUCTURES FABRICATED BY INTERFERENCE PHOTOLITHOGRAPHY.
43. Preparation and Investigation of Epitaxial Layers of Al xGa1- xAs solid Solutions and of Heterojunctions in the AlAs-GaAs system.
44. Miscibility gap of ternary alloys of binary compounds with zinc-blende and wurtzite structures using the cluster variation method
45. Preparation and Investigation of Epitaxial Layers of AlxGa1-xAs solid Solutions and of Heterojunctions in the AlAs-GaAs system
46. Wannier-Stark Effect in InAs/GaAs Quantum-Dot Superlattice.
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