1. Oxygen ion irradiation-driven Al-vacancy mediated room-temperature magnetism induced in amorphous Al-N-O alloy thin films.
- Author
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Nath, Deena, Chakravarty, Sujay, Abhaya, Sekar, Singh, Akash, Saravanan, K., Deshpande, U.P., and Chandra Shekar, N.V.
- Subjects
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THIN films , *AMORPHOUS alloys , *IRRADIATION , *REACTIVE oxygen species , *X-ray photoelectron spectroscopy , *MAGNETISM , *DOPPLER broadening - Abstract
In this work, the evolution of superparamagnetism (SPM) at room temperature is observed in the reactive magnetron sputter deposited amorphous Al-N-O alloy thin films after irradiation with oxygen ions (O−). Energy dispersive X-ray (EDX) analysis reveals the presence of notable Al-vacancy (V Al) in as-grown Al-N-O alloy thin film. X-ray photoelectron spectroscopy (XPS) confirms nitrogen trapping at V Al sites for thermodynamic stability, forming the Al(NO y) x phase. Upon the irradiation using O− at low fluence, i.e. 5 × 1013 ions/cm2, mainly V Al -O N complexes emerged. Here O N refers to nitrogen replaced by oxygen. Furthermore, an increase in oxygen fluence from 1 × 1015 to 2 × 1016 ions/cm2 yields the cross-over from V Al -O N complexes to mainly V Al , due to knocking off the trapped nitrogen atoms at V Al sites. From depth-resolved positron beam-based Doppler broadening measurements, the greater density of V Al sites is noticed in the film irradiated with the highest fluence of O− ion, i.e., 2 × 1016 ions/cm2. The correlation between the elevation of V Al sites with O− irradiation dose is in excellent agreement with the emergence of superparamagnetism (SPM) in the films. Hence, the emergence of SPM in the film after irradiation has been attributed to the creation of V Al sites, which leads to a localized magnetic moment. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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