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2. Lithographyically defined, room temperature low threshold subwavelength red-emitting hybrid plasmonic lasers

9. Nanoengineering of Thin Film V2O5 Cathode Interfaces via Atomic Layer Deposition for use with Polymer Gel Ionic Liquid Electrolytes.

14. Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics

15. Atomic Layer Deposition of Alumina-Coated Thin-Film Cathodes for Lithium Microbatteries.

16. Tantalum Capacitor Separation from Waste Printed Circuit Boards with Molten Salt or Metal.

24. Chemical Vapor Deposition of MoS2 for Back-End-of-Line Applications

25. Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics

27. Study of MoS 2 Deposited by ALD on c-Si, Towards the Development of MoS 2 /c-Si Heterojunction Photovoltaics.

29. Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

30. Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality

31. Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

32. Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks

35. Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2.

36. Harvesting electromagnetic energy in the V-band using a rectenna formed by a bow tie integrated with a 6-nm-thick Au/HfO2/Pt metal-insulator-metal diode

40. A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures.

41. (Invited) The inversion behaviour of narrow band gap MOS systems: experimental observations, physics based simulations and applications

42. An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors.

43. MoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductor.

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