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Advances in synchrotron light sources are creating new opportunities for scientific discovery by producing intense, low-emittance pulses of X-ray illumination. Detectors play a critical link in the experimental process because they are the tools of observation, charged with providing quantitative records of events that are the product of experiments. The capabilities of X-ray imaging detectors often limit the experimental possibilities, and dedicated development is needed to meet source capabilities. Currently, challenging demands on imaging detectors include hard X-ray imaging (e.g., > 25 keV), high-speed imaging (e.g. matching X-ray pulse rates), and high dynamic range imaging. Pixel Array Detector (PAD) development efforts at Cornell aiming to meet these demands are described, including high atomic number (high-Z) sensor materials, single bunch imaging, high-speed continuous acquisition, and high dynamic range imaging. This paper discusses detector design considerations and development efforts at Cornell.

A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 micron thick cadmium telluride (CdTe) sensor. The full imager is a 2 x 3 tiled array of MM-PAD sensor/readout chip hybrids. CdTe improves detection for high energy x-rays as compared to silicon sensors, enabling efficient x-ray imaging to extend to >100 keV. The detector is capable of 1 kHz imaging and in-pixel circuitry has been designed to allow for well depths of greater than 4 x 10^{6} 80 keV x-rays. A charge integrating front-end allows for quantitative measurement of high flux x-ray images beyond the capabilities of photon counting detectors. Detector performance is summarized and experimental measurements are presented.

We report in situ time-resolved measurements of the dynamic evolution of the volume fraction of extension twins in polycrystalline pure magnesium and in the AZ31B magnesium alloy, using synchrotron x-ray diffraction during compressive loading at high strain rates. The dynamic evolution of the twinning volume fraction leads to a dynamic evolution of the texture. Although both the pure metal and the alloy had similar initial textures, we observe that the evolution of texture is slower in the alloy. We also measured the evolution of the lattice strains in each material during deformation which, together with the twin volume fractions, allows us to place some constraints on the relative contributions of dislocation-based slip and deformation twinning to the overall plastic deformation during the dynamic deformations.

Finite element simulations are carried out to follow the evolution of residual stresses in Ti-7Al ( α -hcp) alloy, as developed under an applied stress gradient. A model built upon phenomenological mesoscopic field dislocation mechanics is employed to simulate the deformation behavior. Model predictions are validated with results generated from high energy X-ray diffraction experiments using synchrotron radiation. These experiments provide for important simulation input, viz. grain positions and orientations, and strain rate sensitivities of the prismatic and basal slip systems of Ti-7Al. X-ray diffraction data obtained from individual grains enabled calculation of strain rate sensitivities of the prismatic and basal slip systems and the values are estimated as ∼ 0.04 and ∼ 0.02 respectively. Residual stresses at the length scale of individual grains and subgrains are successfully predicted and validated against experimental data. A key achievement of the present work is the measurement and simulation of residual stress gradients within individual grains. Conclusions from this work are that grains deform mainly via prismatic slip, and accurate characterization of rate-sensitivity is needed to model the development of grain-level residual stresses.

We present first characterization results, with a focus on high-flux measurements, of a fast-framing, wide-dynamic-range x-ray camera intended for high-energy imaging. The MM-PAD-2.1 uses an integrating pixel front-end with a charge removal architecture and in-pixel counter to extend the pixel well depth while maintaining low read noise across the full dynamic range. The charge-removal mechanism is dead-time-less (i.e., incoming signal continues to be integrated by the front-end while charge removal is taking place). The purpose of the high-flux characterization was to determine the maximum sustained incident flux that could be measured while still exhibiting linear behavior. To this end, a 16 × 16 pixel prototype was tested at the Advanced Photon Source at Argonne National Laboratory using 10 keV photons generated by an undulator source. The intensity of the incident beam was varied over 3 orders of magnitude using a series of attenuators, and the signal integrated by the MM-PAD-2.1 prototype was compared to that measured by a He-filled ion chamber directly upstream. Initial results indicate linear performance up to ca. 1010 ph/s in a spot spanning approximately 2 × 1.5 pixels (FWHM). The onset of transient radiation damage was observed during these measurements, characterized primarily by failure of digital readout from the detector ASIC. These effects were observed to reverse after annealing at 30° C for several hours, with full recovery of the detector readout.

With upgrades planned at several x-ray light sources, including improvements to beam quality and brilliance at high energies (> 20 keV), corresponding advances in area detector technology are needed. Pixel array detectors (PADs) are one class of detectors that can meet these needs. PADs feature highly customizable CMOS circuitry for signal processing and data streaming, which facilitates high frame rates and the exploration of various dynamic range extension techniques. The custom CMOS readout chip is mated at a pixel level to a sensor layer that may be chosen independently, providing a testbed for exploring sensors beyond silicon. Here, the development of a fast-framing, wide-dynamic-range PAD intended specifically for use at x-ray energies > 20 keV will be described.

A high-speed pixel array detector for time-resolved X-ray imaging at synchrotrons has been developed. The ability to isolate single synchrotron bunches makes it ideal for time-resolved dynamical studies., A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

Aberration-corrected optics have made electron microscopy at atomic resolution a widespread and often essential tool for characterizing nanoscale structures. Image resolution has traditionally been improved by increasing the numerical aperture of the lens (α) and the beam energy, with the state-of-the-art at 300 kiloelectronvolts just entering the deep sub-angstrom (that is, less than 0.5 angstrom) regime. Two-dimensional (2D) materials are imaged at lower beam energies to avoid displacement damage from large momenta transfers, limiting spatial resolution to about 1 angstrom. Here, by combining an electron microscope pixel-array detector with the dynamic range necessary to record the complete distribution of transmitted electrons and full-field ptychography to recover phase information from the full phase space, we increase the spatial resolution well beyond the traditional numerical-aperture-limited resolution. At a beam energy of 80 kiloelectronvolts, our ptychographic reconstruction improves the image contrast of single-atom defects in MoS2 substantially, reaching an information limit close to 5α, which corresponds to an Abbe diffraction-limited resolution of 0.39 angstrom, at the electron dose and imaging conditions for which conventional imaging methods reach only 0.98 angstrom.

Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable strain, dislocations, or ripples, which can strongly affect their mechanical, optical, and electronic properties. We have developed an approach to map 2D heterojunction lattice and strain profiles with sub-picometer precision and to identify dislocations and out-of-plane ripples. We collected diffraction patterns from a focused electron beam for each real-space scan position with a high-speed, high dynamic range, momentum-resolved detector - the electron microscope pixel array detector (EMPAD). The resulting four-dimensional (4D) phase space datasets contain the full spatially resolved lattice information of the sample. By using this technique on tungsten disulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures, we have mapped lattice distortions with 0.3 pm precision across multi-micron fields of view and simultaneously observed the dislocations and ripples responsible for strain relaxation in 2D laterally-epitaxial structures.

Several charge integrating CMOS pixel front-ends utilizing charge removal techniques have been fabricated to extend dynamic range for x-ray diffraction applications at synchrotron sources and x-ray free electron lasers (XFELs). The pixels described herein build on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging. These new pixels boast several orders of magnitude improvement in maximum flux over the MM-PAD, which is capable of measuring a sustained flux in excess of 10$^{8}$ x-rays/pixel/second while maintaining sensitivity to smaller signals, down to single x-rays. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is thereby shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to that achieved by counting pixel array detectors, but the integrators presented here are designed to tolerate a sustained flux >10$^{11}$ x-rays/pixel/second. Pixel front-end linearity was evaluated by direct current injection and results are presented. A small-scale readout ASIC utilizing these pixel architectures has been fabricated and the use of these architectures to increase single x-ray pulse dynamic range at XFELs is discussed briefly., 6 pages, 7 figures

We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition (DAQ) system, and preliminary results from experiments with 80 to 200 keV electron beams., 39 pages total, 11 Figures in Microscopy and Microanalysis, 2015

Modern storage rings are readily capable of providing intense x-ray pulses, tens of picoseconds in duration, millions of times per second. Exploiting the temporal structure of these x-ray sources opens avenues for studying rapid structural changes in materials. Many processes (e.g. crack propagation, deformation on impact, turbulence, etc.) differ in detail from one sample trial to the next and would benefit from the ability to record successive x-ray images with single x-ray sensitivity while framing at 5 to 10 MHz rates. To this end, we have pursued the development of fast x-ray imaging detectors capable of collecting bursts of images that enable the isolation of single synchrotron bunches and/or bunch trains. The detector technology used is the hybrid pixel array detector (PAD) with a charge integrating front-end, and high-speed, in-pixel signal storage elements. A 384×256 pixel version, the Keck-PAD, with 150 µm × 150 µm pixels and 8 dedicated in-pixel storage elements is operational, has been tested at CHESS, and has collected data for compression wave studies. An updated version with 27 dedicated storage capacitors and identical pixel size has been fabricated.

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods $, Comment: Revised version after 2nd peer-review

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage., Comment: revised version after 2nd peer review

CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transparent. Unfortunately CdTe suffers from polarization, which can alter the response of the material over time and with accumulated dose. Most prior studies used long integration times or CdTe that was not of the hole-collecting Schottky type. We investigated the temporal response of hole-collecting Schottky type CdTe sensors on timescales ranging from tens of nanoseconds to several seconds. We found that the material shows signal persistence on the timescale of hundreds of milliseconds attributed to the detrapping of a shallow trap, and additional persistence on sub-microsecond timescales after polarization. The results show that this type of CdTe can be used for time resolved studies down to approximately 100 ns. However quantitative interpretation of the signal requires careful attention to bias voltages, polarization and exposure history., revised version after peer-review

Kayla X. Nguyen, Robert Hovden, Mark W. Tate, Prafull Purohit, John Heron , Celesta Chang, Sol M. Gruner, David A. Muller Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, USA School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA Department of Physics, Cornell University, Ithaca, NY, USA Department of Materials Science and Engineering, Cornell University, Ithaca, NY USA Kavili Institute for Nanoscale Science, Cornell University USA

Methods We analyzed data from the 2007 National Health Interview Survey (n=23,393) to compare CAM use between adults with and without neuropsychiatric symptoms common to mTBI. Symptoms included self-reported anxiety, depression, insomnia, headaches, memory deficits, attentional deficits, and excessive sleepiness. CAM use was defined as use of mind-body (e.g., meditation), biological (e.g., herbs), manipulation (e.g., massage) therapies, and alternative medical systems (e.g., Ayurveda), within the past 12 months. We estimated prevalence and reasons for CAM use in patients with and without neuropsychiatric symptoms. We also explored variations in CAM use by the number of symptoms. Multivariable logistic regression was performed to examine the association between neuropsychiatric symptoms and CAM use after adjustment for sociodemographic characteristics, illness burden (e.g,. fibromyalgia, low back pain), access to care, and health habits.

We have developed two techniques for time-resolved x-ray diffraction from bulk polycrystalline materials during dynamic loading. In the first technique, we synchronize a fast detector with loading of samples at strain rates of ~10(3)-10(4) s(-1) in a compression Kolsky bar (split Hopkinson pressure bar) apparatus to obtain in situ diffraction patterns with exposures as short as 70 ns. This approach employs moderate x-ray energies (10-20 keV) and is well suited to weakly absorbing materials such as magnesium alloys. The second technique is useful for more strongly absorbing materials, and uses high-energy x-rays (86 keV) and a fast shutter synchronized with the Kolsky bar to produce short (~40 μs) pulses timed with the arrival of the strain pulse at the specimen, recording the diffraction pattern on a large-format amorphous silicon detector. For both techniques we present sample data demonstrating the ability of these techniques to characterize elastic strains and polycrystalline texture as a function of time during high-rate deformation.

Purpose Neuropsychiatric symptoms caused by mild Traumatic Brain Injury (mTBI) are difficult to treat with standard interventions. Given such limitations, patients may choose to treat themselves with mind-body therapies. However, little is known about the use of mind-body therapies by adults with neuropsychiatric symptoms associated with mTBI. Methods We compared mind-body therapy use between adults with and without neuropsychiatric symptoms associated with mTBI (self reported anxiety, depression, insomnia, headaches, memory deficits, attention deficits, and excessive daytime sleepiness) using the 2007 National Health Interview Survey (n=23,393). Mind-body therapy use was defined as use of ≥1 therapy of meditation, yoga, acupuncture, deep-breathing exercises, hypnosis, progressive relaxation therapy, qi gong, and tai chi within the past year. We examined prevalence and reasons for mind-body therapy use in adults with neuropsychiatric symptoms and explored variations in use by number of symptoms. We performed logistic regression to examine the association between neuropsychiatric symptoms and mind-body therapy use, after adjusting for sociodemographic characteristics, illness burden, access to care, and health habits. Results Adults with ≥1 neuropsychiatric symptoms used mindbody therapy more than adults without symptoms (25.8% vs. 15.3%, p