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Miniaturized, ultra-sensitive and easily integrable magnetometers are needed for many applications like space exploration or medical survey. In this study, we combine innovative magnetic tunnel junctions having a symmetric resistance-field (R–H) response with a high gain flux concentrator. In our junctions, the magnetization of the free layer (FL) is stabilized in an anti-parallel configuration with respect to that of the reference layer. This configuration is achieved by using a soft exchange pinning of the FL. We precisely adjust the exchange field value with a dusting layer of ruthenium used to weakly decouple the magnetization of the FL from the local moments of the antiferromagnet. In order to improve the junction's sensitivity, we study the influence of the exchange field value and of the shape anisotropy on the even-function R–H response. In particular, we compare circular junctions with elliptic or rectangular junctions of various aspect ratios and orientations. We find that the sensitivity of the junctions increases when reducing the soft-pinning exchange field and by using junctions with an elongated shape in the direction of the applied field. Finally, we were able to further increase the sensitivity by a factor 440 due to a flux concentrator placed around the junction by electrochemical deposition of NiFe. Its design is optimized (elongated shape, 5–7 μm thickness and 10 μm air-gap) in order to obtain this very high gain. The complete sensor system composed of these magnetic tunnel junctions and the flux concentrator allows to reach sensitivities larger than 1000%/mT. [ABSTRACT FROM AUTHOR]

[Display omitted] • Optical writing and electrical reading of magnetic states within nanoscale ferromagnetic tunnel junctions. • Downscaling of the perpendicularly magnetized nanodevices while retaining the desired functionalities. • Correlation between the switching probability, magnetic anisotropy, and the diameter of the nanodevices. • Probing the depth-resolved hysteresis and time-resolved magnetization dynamics in a full stack magnetic tunnel junction film. Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal of the magnetization by an ultrashort laser pulse is extremely important. We demonstrate single-shot switching of Tb/Co-multilayer based nanoscale MTJs by combining the optical writing and the electrical read-out methods. A 90-fs-long laser pulse switches the magnetization of the storage layer (SL). The change in the tunneling magnetoresistance (TMR) between the SL and a reference layer (RL) is probed electrically across the oxide barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The nature of the magnetization reversal of both SL and RL in a continuous film is probed with a depth-resolved magneto-optical Kerr effect (MOKE) magnetometry. The ultrafast dynamics in the continuous full-MTJ stack is investigated with the time-resolved pump–probe technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices. [ABSTRACT FROM AUTHOR]

This letter presents magnetic tunnel junction based spintronic devices completely implemented in a hybrid semiconductor process that comprises a complementary metal oxide semiconductor and a magnetic tunnel junction technology. To demonstrate the coexistence of both complementary metal oxide semiconductor circuits and magnetic tunnel junction based spintronic devices, a proof‐of‐concept circuit prototype comprising 40 spintronic devices and a digital complementary metal oxide semiconductor serial peripheral interface is fabricated. According to measurement results, a selected spintronic device from the magnetic tunnel junction array, when surrounded by an external out‐of‐plane magnetic field of 1 kOe, emitted microwave signals from 2.235 to 2.464 GHz with an output power from 0.88 to 0.72 nW, when the DC current was increased from 0.6 to 1.0 mA. To the authors' best knowledge, this is the first work demonstrating the functionality of spintronic oscillators fully integrated in complementary metal oxide semiconductor circuit implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction process. [ABSTRACT FROM AUTHOR]

We report on the experimental evidence of magnetic helicoidal dichroism, observed in the interaction of an extreme ultraviolet vortex beam carrying orbital angular momentum with a magnetic vortex. Numerical simulations based on classical electromagnetic theory show that this dichroism is based on the interference of light modes with different orbital angular momenta, which are populated after the interaction between light and the magnetic topology. This observation gives insight into the interplay between orbital angular momentum and magnetism and sets the framework for the development of new analytical tools to investigate ultrafast magnetization dynamics. [ABSTRACT FROM AUTHOR]

• Broad overview on eight major methods for spin generation is given with their physical principles. • Corresponding device applications are discussed based on their recent development. • Future perspectives on the spintronic devices are provided at the end of this review. Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to reduce their power consumption and to increase their memory and processing capabilities. Such devices utilise the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments. In these devices, the spin polarisation is controlled either by magnetic layers used as spin-polarisers or analysers or via spin–orbit coupling. Spin waves can also be used to carry spin current. In this review, the fundamental physics of these phenomena is described first with respect to the spin generation methods as detailed in Sections 2 ~ 9. The recent development in their device applications then follows in Sections 10 and 11. Future perspectives are provided at the end. [ABSTRACT FROM AUTHOR]

A novel multi-functional antiferromagnetic coupling layer (MF-AFC) combining Ru and W is revealed to realize an extremely thin (3.8 nm), back-end-of-line compatible as well as magnetically and electrically stable perpendicular synthetic antiferromagnetic layer (pSAF), essential for spintronic memory and logic device applications. In addition to achieving antiferromagnetic RKKY coupling, this MF-AFC also acts as a Boron sink and texture-breaking layer. A detailed optimization of the thickness of the various involved layers has been carried out to obtain extremely thin-pSAF reference layer with stable magnetic properties, which enables the realization of sub-20 nm STT-MRAM cells. Two important advantages are provided by this ultrathin reference layer: the easing of the reference layer etching and the minimization of the dipolar field acting on the storage layer magnetization. [ABSTRACT FROM AUTHOR]

Magnetism is a very fascinating and dynamic field. Especially in the last 30 years, there have been many major advances in a range of areas from novel fundamental phenomena to new products. Applications such as hard disc drives and magnetic sensors are part of our daily life and new applications, such as in non-volatile computer random access memory, are expected to surface shortly. Thus it is an opportune time for describing the current status and current and future challenges in the form of a roadmap article. The 2014 Magnetism Roadmap provides a view on several selected, presently very active innovative developments. It consists of twelve sections, each written by an expert in the field and addressing a specific subject, with a strong emphasis on future potential.This Roadmap cannot cover the entire field. Several highly relevant areas have been selected without attempting to provide a full review - a future update will aim to address further. The scope covers mostly nanomagnetic phenomena and applications, where surfaces and interfaces provide additional functionality. New developments in fundamental topics such as interacting nanoelements, novel magnon-based spintronics concepts, spin–orbit torques and spin-caloric phenomena are addressed. New materials such as organic magnetic materials and permanent magnets are covered. New applications are presented such as nanomagnetic logic, non-local and domain-wall based devices, heat-assisted magnetic recording, magnetic random access memory and applications in biotechnology.This Roadmap acts to serve as a guideline for future emerging research directions in modern magnetism. [ABSTRACT FROM AUTHOR]