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129 results on '"Qi, Zihang"'

46. 60‐ghz wideband circularly polarized antenna array based on TE340‐mode SIC and sequential rotation feeding technique.

Author

Zhu, Yuefang, Qi, Zihang, Zhu, Hua, and Li, Xiuping

Subjects
*ANTENNA arrays, *CIRCULAR polarization, *WAVEGUIDES, *ELECTRICAL conductors, *ANTENNAS (Electronics)
Abstract

The authors propose a 4 × 4 circularly polarized (CP) antenna array with wide impedance bandwidth and axial‐ratio (AR) bandwidth and design the same for 60‐GHz applications. The overall structure of the proposed antenna array consists of a cavity‐back circular patch array and two layer feed‐networks. The upper feed‐network is with four TE340 high‐order mode substrate integrated cavities (SIC). Fed with SIC, circular patches with a pair of 42°‐inclined slits can achieve circular polarization. In order to improve the AR bandwidth and gain performance, the substrate integrated waveguide (SIW) sequential rotation feeding technique is utilized in the lower feed‐network. For proof of concept, the 4 × 4 array is fabricated and measured. Measured results show that −10‐dB impedance bandwidth of the proposed antenna array is 27.2% from 52 to 68.4 GHz and 3‐dB AR bandwidth is 18.9% from 55.7 to 67.3 GHz. Furthermore, the 3‐dB gain bandwidth is 26.2% from 53 to 69 GHz with a peak gain reaching 19.3 dBic at 62 GHz. [ABSTRACT FROM AUTHOR]

Published
2021
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47. A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process.

Author

Cao, Cheng, Liu, Jiangfan, Li, Yubing, Tan, Tao, Huang, Zemeng, Zhang, Ping, Li, Qingwen, Qi, Zihang, and Li, Xiuping

Subjects
POWER amplifiers, BANDWIDTHS, COMPLEMENTARY metal oxide semiconductors, INTERMODULATION distortion, REFLECTANCE, METAL oxide semiconductor field-effect transistors
Abstract

A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor (CMOS) process is presented. A LC connected dual‐resonant network is proposed to achieve good broadband performance and high out‐band rejection capability simultaneously. Furthermore, the advanced multiple‐gated transistor technique is employed to cancel out odd‐order intermodulation and harmonic distortions. The PA is implemented in 130 nm CMOS process with an area of 1.17 mm × 0.92 mm. Measurement results demonstrate that the PA exhibits a peak power gain of 8 dB with a relative bandwidth of 38% while maintaining a low reflection coefficient of −23.2 dB, maximum saturation output power of 15.6 dBm, maximum OP1dB and OIP3 of 14.3 dBm and 19 dBm, and a peak power added efficiency of 21.3%, respectively. In addition, an out‐band rejection of 20 dB and 23.2 dB at 6.1 GHz and 14 GHz are measured. [ABSTRACT FROM AUTHOR]

Published
2021
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