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In recent years, two-dimensional twisted systems have gained increasing attention. However, the calculation of electronic structures in twisted material has remained a challenge. To address this, we have developed a general computational methodology that can generate twisted geometries starting from monolayer structure and obtain the precisely relaxed twisted structure through a machine learning-based method. Then the electronic structure properties of the twisted material are calculated using tight-Binding (TB) and continuum model methods, thus the entire process requires minimal computational resources. In this paper, we first introduce the theoretical methods for generating twisted structures and computing their electronic properties. We then provide calculations and brief analyses of the electronic structure properties for several typical two-dimensional materials with different characteristics. This work serves as a solid foundation for researchers interested in studying twisted systems., Comment: 13 pages, 14 figures

There has been a significant focus on real topological systems that enjoy space-time inversion symmetry (PT ) and lack spin-orbit coupling. While the theoretical classification of the real topology has been established, more progress has yet to be made in the materials realization of such real topological systems in three dimensions (3D). To address this crucial issue, by selecting the carbon-based material candidates as targets, we perform high-throughput computing to inspect the real topology in the phonon spectrums of the 3D carbon allotropes in the Samara Carbon Allotrope Database (SACADA). Among 1192 kinds of 3D carbon allotropes, we find 65 real topological systems with a phononic real Chern insulating (PRCI) state, 2 real topological systems with a phononic real nodal line (PRNL) state, 10 real topological systems with a phononic real Dirac point (PRDP) state, and 8 real topological systems with a phononic real triple-point pair (PRTPP) state. This extremely expands the material candidates with real topology, especially for the gapless topological phonons. We exhibit the PRCI, PRNL, PRTPP, and PRDP states of 27-SG. 166-pcu-h, 1081-SG. 194- 4 2T13-CA, 52-SG. 141-gis, and 132-SG. 191-3,4T157 as illustrative examples, and explore the second-order boundary mode, i.e., phononic hinge mode. Among the four examples, the materials 1081-SG. 194-42T13-CA and 52-SG. 141-gis are so ideal that the PRNL and PRTPP in them are well separated from other bands, and the phononic hinge mode can be clearly observed. This study aims to broaden the understanding of 3D topological phonons, and emphasizes the potential of 3D carbon allotropes as a valuable framework for exploring the fascinating physics related to phononic hinge modes and phononic real topology.

We demonstrate that a class of stable $\mathbb{Z}_2$ monopole charge Dirac point ($\mathbb{Z}_2$DP) phases can robustly exist in real materials, which surmounts the understanding: that is, a $\mathbb{Z}_2$DP is unstable and generally considered to be only the critical point of a $\mathbb{Z}_2$ nodal line ($\mathbb{Z}_2$NL) characterized by a $\mathbb{Z}_2$ monopole charge (the second Stiefel-Whitney number $w_2$) with space-time inversion symmetry but no spin-orbital coupling. For the first time, we explicitly reveal the higher-order bulk-boundary correspondence in the stable $\mathbb{Z}_2$DP phase. We propose the alternating-twisted multilayer graphene, which can be regarded as 3D twisted bilayer graphene (TBG), as the first example to realize such stable $\mathbb{Z}_2$DP phase and show that the Dirac points in the 3D TBG are essential degenerate at high symmetric points protected by crystal symmetries and carry a nontrivial $\mathbb{Z}_2$ monopole charge ($w_2=1$), which results in higher-order hinge states along the entire Brillouin zone of the $k_z$ direction. By breaking some crystal symmetries or tailoring interlayer coupling we are able to access $\mathbb{Z}_2$NL phases or other $\mathbb{Z}_2$DP phases with hinge states of adjustable length. In addition, we present other 3D materials which host $\mathbb{Z}_2$DPs in the electronic band structures and phonon spectra. We construct a minimal eight-band tight-binding lattice model that captures these nontrivial topological characters and furthermore tabulate all possible space groups to allow the existence of the stable $\mathbb{Z}_2$DP phases, which will provide direct and strong guidance for the realization of the $\mathbb{Z}_2$ monopole semimetal phases in electronic materials, metamaterials and electrical circuits, etc., Comment: PRB Letter, in press

The interplay between symmetry and topology led to the concept of symmetry-protected topological states, including all non-interacting and weakly interacting topological quantum states. Among them, recently proposed nodal line semimetal states with space-time inversion ($\mathcal{PT}$) symmetry which are classified by the Stiefel-Whitney characteristic class associated with real vector bundles and can carry a nontrivial $\mathbb{Z}_2$ monopole charge have attracted widespread attention. However, we know less about such 3D $\mathbb{Z}_2$ nodal line semimetals and do not know how to construct them. In this work, we first extend the layer construction previously used to construct topological insulating states to topological semimetallic systems. We construct 3D $\mathbb{Z}_2$ nodal line semimetals by stacking of 2D $\mathcal{PT}$-symmetric Dirac semimetals via nonsymmorphic symmetries. Based on our construction scheme, effective model and combined with first-principles calculations, we predict two types of candidate electronic materials for $\mathbb{Z}_2$ nodal line semimetals, namely 14 Si and Ge structures and 108 transition metal dichalcogenides $MX_2$ ($M$=Cr, Mo, W, $X$=S, Se, Te). Our theoretical construction scheme can be directly applied to metamaterials and circuit systems. Our work not only greatly enriches the candidate materials and deepens the understanding of $\mathbb{Z}_2$ nodal line semimetal states but also significantly extends the application scope of layer construction.

Based on first-principles calculations and symmetry analysis, we predict atomically thin ($1-N$ layers) 2H group-VIB TMDs $MX_2$ ($M$ = Mo, W; $X$ = S, Se, Te) are large-gap higher-order topological crystalline insulators protected by $C_3$ rotation symmetry. We explicitly demonstrate the nontrivial topological indices and existence of the hallmark corner states with quantized fractional charge for these familiar TMDs with large bulk optical band gaps ($1.64-1.95$ eV for the monolayers), which would facilitate the experimental detection by STM. We find that the well-defined corner states exist in the triangular finite-size flakes with armchair edges of the atomically thin ($1-N$ layers) 2H group-VIB TMDs, and the corresponding quantized fractional charge is the number of layers $N$ divided by 3 modulo integers, which will simply double including spin degree of freedom.

We propose two mechanisms to realize the second order topological insulator (SOTI) state in spinless hexagonal lattices, viz., chemical modification and anti-Kekul\'e/Kekul\'e distortion of hexagonal lattice. Correspondingly, we construct two models and demonstrate the nontrivial band topology of the SOTI state characterized by the second Stiefel-Whitney class $w_2$ in the presence of inversion symmetry ($\textit{P}$) and time-reversal symmetry ($\textit{T}$). Based on the two mechanisms and using first-principles calculations and symmetry analysis, we predict three categories of real light element material candidates, i.e., hydrogenated and halogenated 2D hexagonal group IV materials XY (X=C, Si, Ge, Sn, Y=H, F, Cl), 2D hexagonal group V materials (blue phosphorene, blue arsenene, and black phosphorene, black arsenene), and the recent experimentally synthesized anti-Kekul\'e/Kekul\'e order graphenes and the counterparts of silicene/germanene/stanene. We explicitly demonstrate the nontrivial topological invariants and existence of the protected corner states with fractional charge for these candidates with giant bulk band gap (up to 3.5 eV), which could facilitate the experimental verification by STM. Our approaches and proposed abundant real material candidates will greatly enrich 2D SOTIs and promote their intriguing physics research., Comment: Manuscript (5 figures, 1 table) + Supplementary Material (23 figures, 2 tables), 24 pages