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Lead halide perovskites have been extensively studied for their potential applications, including photodetectors, solar cells, and high-energy radiation detection. These applications are possible because of their unique optoelectronic properties, such as tunable band gap, high optical absorption coefficient, and unique defect self-healing properties, which result in high defect tolerance. Despite these advantages, the long-term stability remains a critical issue that could hinder commercial applications of these materials. Reports on the stability of lead halide perovskites for optoelectronic applications have normally focused on methylammonium (MA)/formamidinium (FA), with very limited information for other systems, in particular, Cs-containing perovskites. In this paper, we report the stability of thick CsPbBr 3- x Cl x polycrystalline thin films (∼8 μm) with several halide Br-Cl ratios after exposure to deep UV radiation. The chemical, crystal structure, optical, and electrical properties are analyzed, and the results are used to propose a degradation mechanism. The chemical analysis on the surface and bulk of the films indicates the formation of cesium oxide after UV exposure, with no significant change in the crystalline structure. The proposed mechanism explains the formation of cesium oxides during UV exposure. The I - V characteristics of diode structures also showed significant degradation after UV exposure, primarily at lower diode rectification ratios. The mechanism proposed in this paper can contribute to developing strategies to enhance the long-term stability of inorganic lead halide perovskites under UV exposure., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)

Perovskite-based semiconductors, such as methylammonium and cesium lead halides (MPbX 3 : M = CH 3 NH 3 + or Cs + ; X = I - , Br - , or Cl - ), have attracted immense attention for several applications, including radiation detection, due to their excellent electronic and optical properties. 1,2,3,4,5,6 In addition, the combination of perovskites with other materials enables unique device structures. For example, robust and reliable diodes result when combined with metal oxide semiconductors. This device can be used for detection of nonionizing and ionizing radiation. In this paper, we report a unique perovskite single-crystal-based neutron detector using a heterojunction diode based on single-crystal MAPbBr 3 and gallium oxide (Ga 2 O 3 ) thin film. The MAPbBr 3 /Ga 2 O 3 diodes demonstrate a leakage current of ∼7 × 10 -10 A/mm 2 , an on/off ratio of ∼10 2 , an ideality factor of 1.41, and minimal hysteresis that enables alpha particle, gamma-ray, and neutron detection at a bias as low as (-5 V). Gamma discrimination is further improved by 85% by optimizing the thickness of the perovskite single crystal. The MAPbBr 3 /Ga 2 O 3 diodes also demonstrate a neutron detection efficiency of ∼3.92% when combined with a 10 B neutron conversion layer.

Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenides (TMDs), have attracted immense interest due to their excellent electronic and optical properties. The combination of single and multilayered 2D TMDs coupled with either Si or II-VI semiconductors can result in robust and reliable photodetectors. In this paper, we report the deposition process of MoSe 2 -layered films using pulsed laser deposition (PLD) over areas of 20 cm 2 with a tunable band gap. Raman and X-ray diffraction indicates crystalline and highly oriented layered MoSe 2 . X-ray photoelectron spectroscopy shows Mo and Se present in the first few layers of the film. Rutherford backscattering demonstrates the effect of O and C on the surface and film/substrate interface of the deposited films. Ultraviolet-visible spectroscopy, Kelvin probe, photoelectron spectroscopy, and electrical measurements are used to investigate the band diagram and electrical property dependence as a function of MoSe 2 layers/thickness. As the MoSe 2 thickness increases from 3.5 to 11.4 nm, the band gap decreases from 1.98 to 1.75 eV, the work function increases from 4.52 to 4.72 eV, the ionization energy increases from 5.71 to 5.77 eV, the sheet resistance decreases from 541 to 56.0 kΩ, the contact resistance decreases from 187 to 54.6 Ω·cm 2 , and the transfer length increases from 2.27 to 61.9 nm. Transmission electron microscopy (TEM) cross-sectional images demonstrate the layered structure of the MoSe 2 with an average interlayer spacing of 0.68 nm. The fabricated MoSe 2 -Si photodiodes demonstrate a current on/off ratio of ∼2 × 10 4 orders of magnification and photocurrent generation with a 22.5 ns rise time and a 190.8 ns decay time, respectively.

This paper reports a simple and novel conformal doping strategy for microstructured silicon diodes using enriched 10 B for sidewall doping while enabling enhanced neutron sensitivity. Monte-Carlo nuclear particle (MCNP) code simulations were initially used to calculate the neutron detection efficiency in the microstructured diodes as a function of geometry and pitch. A high-temperature anneal in 10 B-filled diodes results in a conformal silicon p + layer along the side walls of the trenches in the diodes. This results in large neutron detection areas and enhanced neutron detection efficiency when compared with planar detectors. With the method discussed here, a thermal neutron detection of ∼21% efficiency is achieved, which is significantly higher than the efficiency achieved in planar detectors (∼3.5%). The higher efficiency is enabled by the 10 B acting as a source for conformal doping in the trenches, resulting in lower leakage current while also enabling neutron sensitivity in the microstructured diodes.

The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is used to control its carrier type and concentration, obtaining both n- and p-type films. Carrier concentration can be controlled, ranging from 10 19 to 10 14 cm -3 . Films deposition is performed at 200 °C, a relatively low temperature that enables the use of glass as substrate. Experimental band diagrams for n-type NiO are obtained for the first time. Finally, a NiO homojunction is demonstrated by introducing a low carrier concentration layer in between n- and p + -type NiO layers. Layers are deposited in situ , preventing contamination and improving the interface quality, as observed by TEM. The Ni:O ratio for each layer was also obtained by analytical TEM measurements, demonstrating the impact of the oxygen partial pressure on the films' stoichiometry and the simplicity of our process to control carrier type and carrier concentration in oxide semiconductors.

In this work, ultrathin Ti 3 C 2 -MXene nanosheets were synthesized by minimally intensive layer delamination methods, and uniformly functionalized with aminosilane (f-Ti 3 C 2 -MXene) to provide a covalent binding for the immobilized bio-receptor (anti-CEA) for label free, ultrasensitive detection of cancer biomarker (carcinoembryonic antigen, CEA). The effect of different redox probes on the electrochemical behavior of f-Ti 3 C 2 -MXene was investigated and found that hexaammineruthenium ([Ru(NH 3 ) 6 ] 3+ ) is the preferable redox probe for biosensing. The fabricated biofunctionalized Ti 3 C 2 -MXene exhibits a linear detection range of 0.0001-2000 ng mL -1 with sensitivity of 37.9 µA ng -1 mL cm -2 per decade. The wider linear detection range of our f-Ti 3 C 2 -MXene is not only higher than previously reported pristine 2D nanomaterials, but is even comparable to other hybrid 2D nanomaterials. We believe that this work opens a new window for development of MXene-based highly sensitive DNA, aptamer, enzyme, antibody, and cell based biosensors, and could be further used in drug delivery application., (Copyright © 2018 Elsevier B.V. All rights reserved.)

One of the major limitations of oxide semiconductors technology is the lack of proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on these materials. In this work, p-type NiO x thin films with tunable optical and electrical properties as well as its dependence with oxygen pressure during pulsed laser deposition are demonstrated. The control of NiO x films resistivity ranged from ∼10 9 to ∼10 2 Ω cm, showing a p-type behavior with E g tuning from 3.4 to 3.9 eV. Chemical composition and the resulting band diagrams are also discussed. The all-oxide NiO x -Ga 2 O 3 pn junction showed very low leakage current, an ideality factor of ∼2, 10 5 on/off ratio, and 0.6 V built-in potential. Its J- V temperature dependence is also analyzed. C- V measurements demonstrate diodes with a carrier concentration of 10 15 cm -3 for the Ga 2 O 3 layer, which is fully depleted. These results show a stable, promising diode, attractive for future photoelectronic devices.

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS2) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2) substrates. The films are deposited using carefully designed MoS2 targets fabricated with excess sulfur and variable MoS2 and sulfur particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 10(4) Ω cm(-1), were achieved. The MoS2 stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS2 films ranging from ∼1 to 10 monolayers can be deposited.

In this work, the influence of substrate on the morphology of ZnS thin films by chemical bath deposition is studied. The materials used were zinc acetate, tri-sodium citrate, thiourea, and ammonium hydroxide/ammonium chloride solution. The growth of ZnS thin films on different substrates showed a large variation on the surface, presenting a poor growth on SiO2 and HfO2 substrates. The thin films on ITO substrate presented a uniform and compact growth without pinholes. The optical properties showed a transmittance of about 85% in the visible range of 300-800 nm with band gap of 3.7 eV., (© Wiley Periodicals, Inc.)

We report on highly stretchable piezoelectric structures of electrospun PVDF-TrFE nanofibers. We fabricated nanofibrous PVDF-TrFE yarns via twisting their electrospun ribbons. Our results show that the twisting process not only increases the failure strain but also increases overall strength and toughness. The nanofibrous yarns achieved a remarkable energy to failure of up to 98 J/g. Through overtwisting process, we fabricated polymeric coils out of twisted yarns that stretched up to ∼740% strain. This enhancement in mechanical properties is likely induced by increased interactions between nanofibers, contributed by friction and van der Waals interactions, as well as favorable surface charge (Columbic) interactions as a result of piezoelectric effect, for which we present a theoretical model. The fabricated yarns and coils show great promise for applications in high-performance lightweight structural materials and superstretchable piezoelectric devices and flexible energy harvesting applications.

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.