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Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 ${\mu}$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 ${\mu}$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits., Comment: 22 pages, 13 figures

The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies., Comment: 37 pages , 24 figures

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully., Comment: 15 pages, 3 figures

We report on the first experimental demonstration of majority logic operation using spin waves in a scaled device with an in-line input and output layout. The device operation is based on the interference of spin waves generated and detected by inductive antennas in an all-electrical microwave circuit. We demonstrate the full truth table of a majority logic function with the ability to distinguish between strong and weak majority, as well as an inverted majority function by adjusting the operation frequency. Circuit performance projections predict low energy consumption of spin wave based compared to CMOS for large arithmetic circuits., Comment: This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 801055 "Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics" - CHIRON

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors., Comment: 3 pages plus appendix 1 page with 7 figures

Spin waves modes in magnetic waveguides with width down to 320 nm have been studied by electrical propagating spin-wave spectroscopy and micromagnetic simulations for both longitudinal and transverse magnetic bias fields. For longitudinal bias fields, a 1.3 GHz wide spin-wave band was observed in agreement with analytical dispersion relations for uniform magnetization. However, transverse bias field led to several distinct bands, corresponding to different quantized width modes, with both negative and positive slopes. Micromagnetic simulations showed that, in this geometry, the magnetization was nonuniform and tilted due to the strong shape anisotropy of the waveguides. Simulations of the quantized spin-wave modes in such nonuniformly magnetized waveguides resulted in spin wave dispersion relations in good agreement with the experiments., Comment: 11 pages, 5 figures. This work has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No 801055 "Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics" - CHIRON

The dispersion of spin waves in vertical meander-shaped CoFeB thin films consisting of segments located at 90{\deg} angles with respect to each other is investigated by Brillouin light scattering spectroscopy. We reveal the periodic character of several dispersive branches as well as alternating frequency ranges where spin waves are allowed or forbidden to propagate. Noteworthy is the presence of the frequency band gaps between each couple of successive modes only for wave numbers k=n$\pi$/a, where n is an even integer number and a is the size of the meander unit cell, whereas the spectra show propagating modes in the orthogonal film segments for the other wavenumbers. The micromagnetic simulations and analytical calculations allow us to understand and explain the results in terms of the mode spatial localization and symmetry. The obtained results demonstrate the wave propagation in three dimensions opening the path for multi-level magnonic architectures for signal processing., Comment: 19 pages, 6 figures. This work has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No 801055 "Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics" - "CHIRON"

Spin waves are excitations in ferromagnetic media that have been proposed as information carriers in hybrid spintronic devices with much lower operation power than conventional charge-based electronics. Their wave nature can be exploited in majority gates by using interference for computation. However, a scalable spin-wave majority gate that can be co-integrated alongside conventional electronics is still lacking. Here, we demonstrate a sub-micron inline spin-wave majority gate with fan-out. Time-resolved imaging of the magnetization dynamics by scanning transmission x-ray microscopy illustrates the device operation. All-electrical spin-wave spectroscopy further demonstrates majority gates with sub-micron dimensions, reconfigurable input and output ports, and frequency-division multiplexing. Challenges for hybrid spintronic computing systems based on spin-wave majority gates are discussed., Comment: This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 801055 "Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics" - CHIRON

We study the generation of propagating spin waves in Ta/CoFeB waveguides by spin-orbit torque antennas and compare them to conventional inductive antennas. The spin-orbit torque was generated by a transverse microwave current across the magnetic waveguide. The detected spin wave signals for an in-plane magnetization across the waveguide (Damon-Eshbach configuration) exhibited the expected phase rotation and amplitude decay upon propagation when the current spreading was taken into account. Wavevectors up to about 6 rad/$\mu$m could be excited by the spin-orbit torque antennas despite the current spreading, presumably due to the non-uniformity of the microwave current. The relative magnitude of generated anti-damping spin-Hall and Oersted fields was calculated within an analytic model and it was found that they contribute approximately equally to the total effective field generated by the spin-orbit torque antenna. Due to the ellipticity of the precession in the ultrathin waveguide and the different orientation of the anti-damping spin-Hall and Oersted fields, the torque was however still dominated by the Oersted field. The prospects for obtaining a pure spin-orbit torque response are discussed, as are the energy efficiency and the scaling properties of spin-orbit torque antennas., Comment: 20 pages, 5 figures

Surface-plasmon-polariton waves propagating at the interface between a metal and a dielectric, hold the key to future high-bandwidth, dense on-chip integrated logic circuits overcoming the diffraction limitation of photonics. While recent advances in plasmonic logic have witnessed the demonstration of basic and universal logic gates, these CMOS oriented digital logic gates cannot fully utilize the expressive power of this novel technology. Here, we aim at unraveling the true potential of plasmonics by exploiting an enhanced native functionality - the majority voter. Contrary to the state-of-the-art plasmonic logic devices, we use the phase of the wave instead of the intensity as the state or computational variable. We propose and demonstrate, via numerical simulations, a comprehensive scheme for building a nanoscale cascadable plasmonic majority logic gate along with a novel referencing scheme that can directly translate the information encoded in the amplitude and phase of the wave into electric field intensity at the output. Our MIM-based 3-input majority gate displays a highly improved overall area of only 0.636 {\mu}m$^2$ for a single-stage compared with previous works on plasmonic logic. The proposed device demonstrates non-Boolean computational capability and can find direct utility in highly parallel real-time signal processing applications like pattern recognition., Comment: Supplementary information included

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step toward the realization of a majority gate, even though further downscaling may be required. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications, Comment: submitted to Japanese Journal of Applied Physics

The mechanical behavior of magnetoelectric transducers consisting of piezoelectric-magnetostrictive bilayers has been modeled. The effect of the aspect ratio of the transducer as well as the influence of non-active surrounding layers has been modeled, including a passivation layer surrounding the active device, a clamping layer above the active device, and an interfacial layer that might be inserted between the magnetostrictive and the piezoelectric layers. Strategies to control and maximize the strain magnitude and orientation based on material selection and device design are proposed., Comment: MNE2017, 6 pages, 4 figures

We study the excitation of spin waves in scaled magnetic waveguides using the magnetoelastic effect. In uniformly magnetized systems, normal strains parallel or perpendicular to the magnetization direction do not lead to spin wave excitation since the magnetoelastic torque is zero. Using micromagnetic simulations, we show that the nonuniformity of the magnetization in submicron waveguides due to the effect of the demagnetizing field leads to the excitation of spin waves for oscillating normal strains both parallel and perpendicular to the magnetization. The excitation by biaxial normal in-plane strain was found to be much more efficient than by uniaxial normal out-of-plane strain. For narrow waveguides with widths of 200\,nm, the excitation efficiency of biaxial normal in-plane strain was comparable to that of shear strain., Comment: 11 pages, 3 figures

A spin wave majority fork-like structure with feature size of 40\,nm, is presented and investigated, through micromagnetic simulations. The structure consists of three merging out-of-plane magnetization spin wave buses and four magneto-electric cells serving as three inputs and an output. The information of the logic signals is encoded in the phase of the transmitted spin waves and subsequently stored as direction of magnetization of the magneto-electric cells upon detection. The minimum dimensions of the structure that produce an operational majority gate are identified. For all input combinations, the detection scheme employed manages to capture the majority phase result of the spin wave interference and ignore all reflection effects induced by the geometry of the structure.

We develop an all electrical experiment to perform the broadband phase-resolved spectroscopy of propagating spin waves in micrometer sized thin magnetic stripes. The magnetostatic surface spin waves are excited and detected by scaled down to 125 nm wide inductive antennas, which award ultra broadband wavevector capability. The wavevector selection can be done by applying an excitation frequency above the ferromagnetic resonance. Wavevector demultiplexing is done at the spin wave detector thanks to the rotation of the spin wave phase upon propagation. A simple model accounts for the main features of the apparatus transfer functions. Our approach opens an avenue for the all electrical study of wavevector-dependent spin wave properties including dispersion spectra or non-reciprocal propagation., Comment: 5 pages, 3 figures

Theory predicts that quasiparticle tunneling between the counter-propagating edges in a fractional quantum Hall state can be used to measure the effective quasiparticle charge e* and dimensionless interaction parameter g, and thereby characterize the many-body wavefunction describing the state. We report measurements of quasiparticle tunneling in a high mobility GaAs two dimensional electron system in the fractional quantum Hall state at nu=5/2 using a gate-defined constriction to bring the edges close together. We find the dc-bias peaks in the tunneling conductance at different temperatures collapse onto a single curve when scaled, in agreement with weak tunneling theory. Various models for the \nu=5/2 state predict different values for g. Among these models, the non-abelian states with e*=1/4 and g=1/2 are most consistent with the data., Comment: supporting material: http://marcuslab.harvard.edu/Radu_SOMs.pdf

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the ratio decreases with increasing magnetic field until tunneling into the excited spin state is completely suppressed. However, we find that by adjusting the voltages on the surface gates to change the orbital configuration of the dot we can restore tunneling into the excited spin state and that the ratio reaches a maximum when the dot is symmetric., Comment: 4 pages, 3 figures

We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W= (T_1)^-1 by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions and from these data we extract the spin-orbit length. We also measure the dependence of W on magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1T, where T_1 exceeds 1s., Comment: 4 pages, 3 figures

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements., Comment: 4 pages, 4 figures

We measure the relaxation rate $W \equiv T_{1}^{-1}$ of a single electron spin in a quantum dot at magnetic fields from 7 T down to 1.75 T, much lower than previously measured. At 1.75 T we find that $T_{1}$ is 170 ms. We find good agreement between our measurements and theoretical predictions of the relaxation rate caused by the spin-orbit interaction, demonstrating that spin-orbit coupling can account for spin relaxation in quantum dots., Comment: 4 pages, 3 figures

An artificial atom with four electrons is driven through a singlet-triplet transition by varying the confining potential. In the triplet, a Kondo peak with a narrow dip at drain-source voltage V_ds=0 is observed. The low energy scale V_ds* characterizing the dip is consistent with predictions for the two-stage Kondo effect. The phenomenon is studied as a function of temperature T and magnetic field B, parallel to the two-dimensional electron gas. The low energy scales T* and B* are extracted from the behavior of the zero-bias conductance and are compared to the low energy scale V_ds* obtained from the differential conductance. Good agreement is found between kT* and |g|muB*, but eV_ds* is larger, perhaps because of nonequilibrium effects., Comment: 7 pages, 7 figures. Added labels on Fig. 3f and one reference