32 results on '"Raghunathan, Uppili S."'
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2. The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs
3. Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers
4. Fast Frequency and Phase Tracking Analog PLL for Direct Carrier Synchronization
5. Fast Frequency and Phase Tracking Analog PLL for Direct Carrier Synchronization
6. SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems
7. Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs
8. Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications
9. Variability of p-n Junctions and SiGe HBTs at Cryogenic Temperatures
10. Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs
11. Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown
12. Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents
13. Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design
14. Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs
15. Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs
16. Predicting hard failures and maximum usable range of sige HBTs
17. An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology
18. Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs
19. Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology
20. On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs
21. An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers
22. Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology
23. Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation
24. Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets
25. Bias- and Temperature-Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs
26. A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs
27. Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers
28. Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs
29. Modeling of high-current damage in SiGe HBTs under pulsed stress.
30. On the reliability of SiGe HBT cascode driver amplifiers
31. TCAD modeling of accumulated damage during time-dependent mixed-mode stress
32. Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs
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