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95 results on '"Rahimo, Munaf"'

22. Capacitive effects in IGBTs limiting their reliability under short circuit

Author

Reigosa, Paula Diaz, Iannuzzo, Francesco, Rahimo, Munaf, and Blaabjerg, Frede

Subjects
Oscillations, TCAD, Short circuit, Reliability, IGBT, Parametric oscillations
Abstract

The short-circuit oscillation mechanism in IGBTs is investigated in this paper by the aid of semiconductor device simulation tools. A 3.3-kV IGBT cell has been used for the simulations demonstrating that a single IGBT cell is able to oscillate together with the external circuit parasitic elements. The work presented here through both circuit and device analysis, confirms that the oscillations can be understood with focus on the device capacitive effects coming from the interaction between carrier concentration and the electric field. The paper also shows the 2-D effects during one oscillation cycle, revealing that the gate capacitance changes according with the shape of the electric field due to the charge distribution in the n-base. It has been identified that the time-varying capacitance leads to parametric oscillations together with the stray gate inductance, which limit the reliability of the IGBT.

Published
2017

34. Freewheeling Diode Reverse-Recovery Failure Modes in IGBT Applications

Author

Rahimo, Munaf T. and Shammas, Noel Y. A.

Subjects
Diodes -- Research, Semiconductors -- Usage, Power electronics -- Research, Bipolar transistors -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

In this paper, reverse-recovery failure modes in modern fast power diodes are investigated. By the aid of semiconductor device simulation tools, a better view is obtained for the physical process, and operating conditions at which both diode snappy recovery and dynamic avalanching occur during the recovery period in modern high-frequency power electronic applications. The work presented here confirms that the reverse-recovery process can by expressed by means of diode capacitance effects which influence the reverse-recovery characteristics. The paper also shows that the control of the carrier gradient and the remaining stored charge in the drift region during the recovery phase influence both failure modes and determine if the diode exhibits soft, snappy, or dynamic avalanche recovery characteristics. Index Terms--Dynamic avalanche, freewheeling diode, snappy recovery.

Published
2001

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