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In the present work, electrical structural and surface morphology of tin oxide thin films prepared using simple conventional method known as (CTO) was carried out. The obtained result insures the formation of Nano crystalline SnO2 films as a tetragonal structure. The atomic force microscope results show that film roughness depended on oxidation temperature. Minimum electrical resistivity found to be about (5.35 x 10-5 .cm) at (300°C) oxidation temperature.

In the present work, preparation of transparent conductive SnO2 thin films by classical-oxidation technique of thermal evaporated tin metal films, on glass substrates was carried out. The optical properties showed high transmission at visible and NIR regions. The energy band gap was found to be (3.82eV). The structure properties showed that the tin oxide peak appears at (2q =30.24) and (2ϴ=63.39°) . The atomic force microscopy (AFM) results showed a nano-structured for the thin film with particle size ranging (15-140)nm and its root mean square (RMS) value was found to be (5.72 nm ).