Search

My PhD experience has been focused on identifying and pursuing gaps in the understanding and implementation of spin-based phenomena. I primarily focus on Bi2Se3, due to its pervasiveness in the literature, safe and low-cost constituent elements, as well as the fact that its remarkably simple topological band structure functions as an ideal testbed for spin-momentumlocked physics.The ideal spintronic material should have spin-orbit coupling that can be easily and reversibly tuned on ultrafast timescales. From the viewpoint of an ARPES experimentalist, ultrafast infrared pulses are a logical choice for implementing picosecond modifications. Furthermore, the effect of light on Rashba and topological systems has not fully transitioned from material characterization into the realm of engineered systems. For the first portion of my studies, I engineered Rashba-split quantum well states on the surface of a topological insulator and demonstrated the precise control of the spin and energy degrees of freedom as well as the density of states at the Fermi level. Chapters 2 through 5 represent the bulk of my PhD controlling surface band bending to generate ultrafast surface fields in topological insulators. These chapters follow a single coherent and chronological journey from my personal recognition of the effect (Ch. 2) to the exploration of the surface dipole effect on electron trajectory (Ch. 3) to the engineering of the SPV to drive ultrafast electric-field induced changes in quantum well states (Ch. 4 and Ch. 5). The unprecedented control of nearly all aspects of the band structure using photons presents a foundation for coupling spintronic and photonic systems, essential for integrating fiber optic communications with future spin-based devices.Additionally, I pursue the issue no one wants to talk about for quantum material applications: scaling growth methods while preserving essential properties. This has been one of the main sticking points in not only 2D material fabrication (think mass graphene production or twistronic applications) but also for 3D bulk systems that depend heavily on single crystal quality. In my pursuit of understanding spin-orbit coupling in amorphous topological insulators, my collaborators and I discovered spin-momentum locking in amorphous Bi2Se3 grown through scalable room-temperature thermal evaporation. Chapter 6 details my work investigating strongly dispersive band structures in amorphous materials and the implications to amorphous topology and fermiology. These efforts demonstrate that spin-momentum locking can exist in the amorphous state, and provide an avenue for extracting the same momentum-dependent physics in crystals but for the much larger (and production-feasible)material category of non-crystalline matter.Finally, Chapter 7 continues in my motivation to expand real-world applications for spin-polarized materials. Solid state spin-filters can be applied to free electrons in vacuum, an intriguing prospect that has implications for spin-resolved microscopy/spectroscopy techniques and has been pursued for decades. I present my work leading a team to design a prototype transmission spin-filter for free electrons. I go over the methods we have developed and optimized to measure electron transmission through membranes and our successful attempts at growing ultrathin free-standing magnetic films, resulting in a groundbreaking spin-filter prototype.

Silicon is the standard electronics semiconductor for its abundance and versatility. However, its insignificant intrinsic spin-orbit coupling leads to weak spin-charge conversion and hinders its application in spin-transport electronics. Spin-orbit coupling can be enhanced by lifting the degenerate spin bands through strain gradient and Rashba effect, and further increased with proximity effect. By creating strain gradient in Si, we broke its centrosymmetric crystal structure and created flexoelectricity and charge separation. The combination of Si inversion asymmetry and electric polarization arose Rashba spin-orbit coupling with estimated spin-Hall angle of 0.1132, same order as Pt. The intrinsic spin-Hall effect in p-Si and n-Si is proven from observation of spin-Hall magnetoresistance, emergent phase transitions and dissipationless spin current. The methods we employed to enhance, characterize and utilize spin-orbit coupling are documented in this thesis.This thesis begins with reviewing the mechanisms for spin transport manipulation and the current understandings of spin transport in Si. We introduce the effects of strain gradient, Rashba and proximity that can lift the spin degeneracy, and the methods for incorporating the effects into Si with material structure of p-Si/MgO/NiFe/Pd using standard fabrication procedures. We validated our device setup through spin-Hall magnetoresistance measurements, and characterized the type and strength of spin-orbit coupling. Using the enhanced spin-orbit coupling, we measured its influence with magnetoresistance from NiFe, since spin current should influence the magnetization of a magnet in contact. As thermal transport was primarily carried by Si, we measured thermal properties of the device using three-omega method to study the changes in Si with spin polarization. In Si, spins relax through Elliot-Yafet mechanism, and our measured thermal properties reflect the interaction between spins and phonons. Further investigation showed signatures of phase transitions in thermal transport properties. To enhance the spin polarization, we constricted the thickness of Si to its spin diffusion length, and consequently arose metal-to-insulator transition and additional phase transitions. In a device composed of MgO and Si bilayer, we generated and detected dissipationless spin current solely through Si without a ferromagnet. In this study, we demonstrate the functionality of Si as a spin transport material with tunable spin-orbit coupling, advocating the feasibility of Si spintronics.

Strong interaction between the spin and orbital angular momentum of electrons in a material can give that material unusual quantum properties beyond what can be described by textbook band theory. It can lift the spin degeneracy of electronic bands and create a spin-momentum locking that can be a lever for electrical control of a material's magnetism. It creates a new state of matter: topological insulators, by twisting the energy ordering of electronic states. It adds complexity to how light interacts with the material, enabling somemeans for pointing photoelectron spins in a chosen direction.However, the way spin-orbit coupling is manifested in a material is shaped by the symmetries of the crystal. In presenting findings from topological insulators, this dissertation demonstrates how those symmetries can force a material to have multiple spin textures in momentum space, each coupled to a distinct atomic orbital. Further, it shows how changes to those symmetries can eliminate those orbital-dependent spin textures and leave a single overall spin texture. Lastly, it shows how symmetries can allow crystals to harbor hidden spin textures in certain parts of their real space unit cells even when the overall band structure is spin degenerate. This last point is demonstrated in a cuprate high temperature superconductor, in which the newly discovered spin structure could have profound implications for the nature of superconductivity.The results presented in this dissertation come from spin- and angle-resolved photoemission measurements of several quantum materials using a uniquely efficient and high resolution spectrometer. The details of how the spectrometer works when coupled with a laboratory-based laser and how that enables new experiments that were otherwise infeasible are given.This dissertation is organized into six chapters. Chapter 1 reviews atomic spin-orbit coupling and ways it can influence the properties of materials. Chapter 2 explains spin- and angle-resolved photoemission and the unique instrumentation used for experiments in this work. Chapter 3 details experiments that show how spin textures in materials can couple to different orbitals. Chapter 4 shows how that coupling can break down when symmetry no longer requires it. Chapter 5 presents surprising findings of a spin texture hidden in a cuprate superconductor. Chapter 6 presents discussion of future research directions on the study and manipulation of the spin-orbit interaction in materials.

Halide perovskites possess enormous potential for various optoelectronic applications. Presently, a clear understanding of the interplay between the lattice and electronic effects is still elusive. Specifically, the weakly absorbing tail states and dual emission from perovskites are not satisfactorily described by existing theories based on the Urbach tail and reabsorption effect. Herein, through temperature-dependent and time-resolved spectroscopy on metal halide perovskite single crystals with organic or inorganic A-site cations, we confirm the existence of indirect tail states below the direct transition edge to arise from a dynamical Rashba splitting effect, caused by the PbBr6 octahedral thermal polar distortions at elevated temperatures. This dynamic effect is distinct from the static Rashba splitting effect, caused by non-spherical A-site cations or surface induced lattice distortions. Our findings shed fresh perspectives on the electronic-lattice relations paramount for the design and optimization of emergent perovskites, revealing broad implications for light harvesting/photo-detection and light emission/lasing applications., The weak effects induced by lattice disorder on the optoelectronic properties of halide perovskites still remain elusive. Here Wu et al. confirm the indirect transition tail states in perovskite crystals which explain their low photoluminescence quantum yield, dual emission peaks and difficulties in realizing lasing.

Conventional spintronics generally uses magnetic materials to produce a spin current from a current of charge. Another means, more recently studied, is the use of spin-orbit coupling (SOC). It makes possible to produce a pure current of spin in a direction transverse to the charge current, taking into account the principles of relativistic quantum mechanics. In materials with strong spin-orbit coupling, the spin currents are large enough to imagine using them for magnetic switching in spintronic devices. The spin-orbit coupling, corresponding to a relativistic correction in the equations of motion of the electron, a spin 1/2 particle, can be large in materials containing heavy atoms. This means that a conversion from charge current to spin current can be obtained using the properties of SOC systems such as platinum (Pt), tungsten(W) or tantalum (Ta) for example. Recently 2 dimensionnal electronic gas (2DEG), obtained at particular interfaces or surfaces, have demonstrated properties allowing particularly effective inter-conversion effects. In particular Rashba states or topological insulator systems, are currently arousing a strong interest in the spintronics community for this faculty of spin-charge conversion.In this particular context, over the last ten years or so, topological insulators have been studied for their electronic properties which are rooted in the theoretical definition of the integer quantum Hall effect given by Thouless, as well as in the work of Haldane in graphene and Kane in low bandgap semiconductor systems with a strong SOC. These systems have intriguing electrical properties: they are insulating in volume and conductive on the surfaces. These conductivity states have a linear energy dispersion as a function of the k-wave vector, as in the case of the graphene, with a determined spin helicity.Nevertheless, many questions remain open as the understanding of the mechanisms at the origin of these states of surface conduction, but also as to the simplest way to detect these topological states. In order to integrate in spintronic devices and to realize TI/Ferromagnetic materials interface, a number of questions arise: how to preserve the nature of the topological states at the interface? What materials should be used and what is the atomic nature of the interface (inter-mixing) ? What are the electronic exchanges at the interface? Etc.One of the applications using the properties of topological insulators, is to use the conversion properties of the charge current to spin current in order to modify or switch the magnetization of a ferromagnetic element or memory deposited directly (or separated by a buffer layer) on the topological material itself. Such a two-layer system or multilayer should be capable of integration into a magnetic random access memory (MRAM) or of increasing the potential of disks (SSD) due to the permanent and non-volatile nature of the magnetisation state of the material. This is framework of this thesis.; La spintronique classique utilise généralement des matériaux magnétiques pour produire un courant de spin à partir d’un courant de charge. Un autre moyen, plus récemment étudié, consiste à utiliser le couplage spin-orbite (SOC). Il permet de produire un courant de spin pur selon une direction transverse au courant de charge en tenant compte des principes de la mécanique quantique relativiste. Dans les matériaux à fort couplage spin-orbite, les courants de spin ainsi produits sont suffisamment importants pour imaginer les utiliser pour la commutation magnétique dans les dispositifs spintroniques. Le couplage spin-orbite, correspondant à une correction relativiste dans les équations du mouvement de l’électron, particule de spin 1/2, peut être grand dans des matériaux contenant des atomes lourds. Cela signifie qu’une conversion du courant de charge en courant de spin peut être obtenue en utilisant les propriétés de systèmes à fort SOC tel que le platine (Pt), le tungstène (W) ou le tantale (Ta), par exemple. Depuis peu, des systèmes électroniques bidimensionnels (2DEG), obtenus au niveau d’interfaces ou de surfaces particulières, ont démontré des propriétés permettant des effets d’inter-conversion particulièrement efficaces. En particulier des états Rashba ou des systèmes d’isolants topologiques, suscitent actuellement un fort engouement dans la communauté de la spintronique pour cette faculté d’inter-conversion spin-charge.Dans ce cadre particulier, depuis une dizaine d’années, les isolants topologiques ont été étudiés pour leurs propriétés électroniques non conventionnelles qui prennent racine dans la définition théorique de l’effet Hall quantique entier donnée par Thouless, ainsi que dans les travaux de Haldane dans le graphène et de Kane dans des systèmes semi-conducteurs à faible bande interdite pourvus d’un SOC fort. Ces systèmes 2D présentent des propriétés électriques intrigantes : ils sont isolants en volume et conducteurs en surface. Ces états de conductions sont pourvus d’une dispersion linéaire en énergie en fonction du vecteur d’onde k, comme dans le cas du graphène, avec une hélicité en spin déterminée.De nombreuses questions restent néanmoins ouvertes quant à la compréhension des mécanismes à l’origine de ces états de conduction en surface, mais également quant à la manière la plus simple de détecter ces états topologiques. En vue de leur intégration dans des dispositifs spintroniques et de la réalisation d’interface TI/Matériaux ferromagnétiques un certain nombre de questions se posent : comment préserver la nature des états topologiques à l’interface ? Quels matériaux utiliser et quelle est la nature atomique de l’interface (diffusion atomique) ? Quels sont les échanges électroniques à l’interface ? Etc.L’une des applications utilisant les propriétés des isolants topologiques, est d’utiliser les propriétés de conversion du courant de charge en courant de spin (et vice versa) afin de modifier ou commuter l’aimantation d’un élément ou mémoire ferromagnétique déposé directement (ou séparé par une couche tampon) sur le matériau topologique lui-même. Un tel système de bicouches ou multi-couches devrait être capable de s’intégrer dans une mémoire vive magnétique (MRAM) ou d’accroître le potentiel des disques électroniques (SSD) en raison du caractère permanent et non volatile de l’état d’aimantation du matériau. C’est dans ce cadre que s’inscrit cette thèse.

Conventional spintronics generally uses magnetic materials to produce a spin current from a current of charge. Another means, more recently studied, is the use of spin-orbit coupling (SOC). It makes possible to produce a pure current of spin in a direction transverse to the charge current, taking into account the principles of relativistic quantum mechanics. In materials with strong spin-orbit coupling, the spin currents are large enough to imagine using them for magnetic switching in spintronic devices. The spin-orbit coupling, corresponding to a relativistic correction in the equations of motion of the electron, a spin 1/2 particle, can be large in materials containing heavy atoms. This means that a conversion from charge current to spin current can be obtained using the properties of SOC systems such as platinum (Pt), tungsten(W) or tantalum (Ta) for example. Recently 2 dimensionnal electronic gas (2DEG), obtained at particular interfaces or surfaces, have demonstrated properties allowing particularly effective inter-conversion effects. In particular Rashba states or topological insulator systems, are currently arousing a strong interest in the spintronics community for this faculty of spin-charge conversion.In this particular context, over the last ten years or so, topological insulators have been studied for their electronic properties which are rooted in the theoretical definition of the integer quantum Hall effect given by Thouless, as well as in the work of Haldane in graphene and Kane in low bandgap semiconductor systems with a strong SOC. These systems have intriguing electrical properties: they are insulating in volume and conductive on the surfaces. These conductivity states have a linear energy dispersion as a function of the k-wave vector, as in the case of the graphene, with a determined spin helicity.Nevertheless, many questions remain open as the understanding of the mechanisms at the origin of these states of surface conduction, but also as to the simplest way to detect these topological states. In order to integrate in spintronic devices and to realize TI/Ferromagnetic materials interface, a number of questions arise: how to preserve the nature of the topological states at the interface? What materials should be used and what is the atomic nature of the interface (inter-mixing) ? What are the electronic exchanges at the interface? Etc.One of the applications using the properties of topological insulators, is to use the conversion properties of the charge current to spin current in order to modify or switch the magnetization of a ferromagnetic element or memory deposited directly (or separated by a buffer layer) on the topological material itself. Such a two-layer system or multilayer should be capable of integration into a magnetic random access memory (MRAM) or of increasing the potential of disks (SSD) due to the permanent and non-volatile nature of the magnetisation state of the material. This is framework of this thesis.; La spintronique classique utilise généralement des matériaux magnétiques pour produire un courant de spin à partir d’un courant de charge. Un autre moyen, plus récemment étudié, consiste à utiliser le couplage spin-orbite (SOC). Il permet de produire un courant de spin pur selon une direction transverse au courant de charge en tenant compte des principes de la mécanique quantique relativiste. Dans les matériaux à fort couplage spin-orbite, les courants de spin ainsi produits sont suffisamment importants pour imaginer les utiliser pour la commutation magnétique dans les dispositifs spintroniques. Le couplage spin-orbite, correspondant à une correction relativiste dans les équations du mouvement de l’électron, particule de spin 1/2, peut être grand dans des matériaux contenant des atomes lourds. Cela signifie qu’une conversion du courant de charge en courant de spin peut être obtenue en utilisant les propriétés de systèmes à fort SOC tel que le platine (Pt), le tungstène (W) ou le tantale (Ta), par exemple. Depuis peu, des systèmes électroniques bidimensionnels (2DEG), obtenus au niveau d’interfaces ou de surfaces particulières, ont démontré des propriétés permettant des effets d’inter-conversion particulièrement efficaces. En particulier des états Rashba ou des systèmes d’isolants topologiques, suscitent actuellement un fort engouement dans la communauté de la spintronique pour cette faculté d’inter-conversion spin-charge.Dans ce cadre particulier, depuis une dizaine d’années, les isolants topologiques ont été étudiés pour leurs propriétés électroniques non conventionnelles qui prennent racine dans la définition théorique de l’effet Hall quantique entier donnée par Thouless, ainsi que dans les travaux de Haldane dans le graphène et de Kane dans des systèmes semi-conducteurs à faible bande interdite pourvus d’un SOC fort. Ces systèmes 2D présentent des propriétés électriques intrigantes : ils sont isolants en volume et conducteurs en surface. Ces états de conductions sont pourvus d’une dispersion linéaire en énergie en fonction du vecteur d’onde k, comme dans le cas du graphène, avec une hélicité en spin déterminée.De nombreuses questions restent néanmoins ouvertes quant à la compréhension des mécanismes à l’origine de ces états de conduction en surface, mais également quant à la manière la plus simple de détecter ces états topologiques. En vue de leur intégration dans des dispositifs spintroniques et de la réalisation d’interface TI/Matériaux ferromagnétiques un certain nombre de questions se posent : comment préserver la nature des états topologiques à l’interface ? Quels matériaux utiliser et quelle est la nature atomique de l’interface (diffusion atomique) ? Quels sont les échanges électroniques à l’interface ? Etc.L’une des applications utilisant les propriétés des isolants topologiques, est d’utiliser les propriétés de conversion du courant de charge en courant de spin (et vice versa) afin de modifier ou commuter l’aimantation d’un élément ou mémoire ferromagnétique déposé directement (ou séparé par une couche tampon) sur le matériau topologique lui-même. Un tel système de bicouches ou multi-couches devrait être capable de s’intégrer dans une mémoire vive magnétique (MRAM) ou d’accroître le potentiel des disques électroniques (SSD) en raison du caractère permanent et non volatile de l’état d’aimantation du matériau. C’est dans ce cadre que s’inscrit cette thèse.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) This work was dedicated to the theoretical study of semiconductor nanostructures aimed at the implementation of spin dependent electronic transport. The objective was to study the electron transport properties considering the Rashba spin-orbit interaction located in a certain spatial region. Different configurations were considered for the intensity of the Rashba interaction, external potential and external magnetic field applied to the nanowire. In this way, we understand the modulation of spin transport when it is projected in the z-direction through the combination of spin-orbit interaction and system dimensionalities. In particular, we find a semi-analytical solution capable of determining spin dependent transport properties. This semi-analytic solution was applied to the electronic transport in a nanowire, considering a strictly one-dimensional model and a quasi one-dimensional model employing the effective mass approximation (k-p method). In this case, the electrons confined in a nanowire cross a region where the spin-orbit coupling is present, which will modify its transmission. Under certain conditions, the interaction of Rashba causes a suppression of the transmission for certain energies of the incident electrons. Such suppression can be understood as being the effect of coupling a bound state with the states of the continuum. These results open a new perspective for the understanding of experimental results of electronic transport in nanowires. Esse trabalho foi dedicado ao estudo teórico de nanoestruturas semicondutoras visando a implementação do transporte eletrônico dependente de spin. O objetivo foi estudar as propriedades de transporte de elétrons considerando a interação de spin-órbita de Rashba localizada em certa região espacial. Foram consideradas diferentes configurações para a intensidade da interação de Rashba, potencial externo e campo magnético externo aplicado ao nanofio. Desse modo, compreendemos a modulação do transporte de spin quando esse é projetado na direção-z através da combinação da interação spin-órbita e das dimensionalidades do sistema. Em particular, encontramos uma solução semi analítica capaz de determinar as propriedades de transporte dependente de spin. Essa semi analítica solução foi aplicada ao transporte eletrônico em um nanofio, considerando um modelo estritamente unidimensional e um modelo quase unidimensional usando a aproximação de massa efetiva (método k-p). Neste caso, os elétrons confinados no um nanofio atravessam uma região onde o acoplamento spin-órbita está presente, o qual modificará sua transmissão. Em certas condições, a interação de Rashba causa uma supressão da transmissão para certas energias dos elétrons incidentes. Essa supressão pode ser compreendida através como sendo efeito do acoplamento de um estado ligado com os estados do contínuo. Esses resultados abrem uma nova perspectiva para o entendimento de resultados experimentais de transporte eletrônico em nanofios. CAPES: Código de Financiamento 001

Rashba spin-orbit coupling emerges in materials lacking of structural inversion symmetry, such as heterostructures, quantum wells, surface alloys and polar materials, just to mention few examples. It yields a coupling between the spin and momentum of electrons formally identical to that arising from the weakly-relativistic limit of the Dirac equation. The purpose of the present work is to give an overview of the unconventional dc transport properties of two-dimensional metals with strong Rashba spin-orbit coupling, discussing in addition the effects of thermal broadening., 25 pages, 11 figures

We study the relaxation dynamics of non-equilibrium chirality distributions of charge carriers in Rashba systems. We find that at low temperature inter-Rashba band transitions become suppressed due to the combined effect of the Rashba momentum split and the chiral spin texture of a Rashba system. Specifically, we show that momentum exchange between carriers and the phonon bath is effectively absent at temperatures where the momentum of thermal phonons is less than twice the Rashba momentum. This allows us to identify inter-carrier scattering as the dominant process by which non-equilibrium chirality distributions relax. We show that the magnitude of inter-carrier scattering is strongly influenced by the opposing spin structure of the Rashba bands. Finally, we provide an explicit result for the inter-band relaxation timescale associated with inter-carrier Coulomb scattering. We develop a general framework and assess its implications for GeTe, a bulk Rashba semiconductor with a strong Rashba momentum split., 14 pages, 2 figures

This thesis is devoted to the study of the electron spin properties for optoelectronic and spintronic applications of different GaAs-based semiconductor systems: GaAsN, GaAsBi, and InGaAs.The investigation of the spin properties of dilute nitride GaAsN-based semiconductors is centered on the properties of the hyperfine interaction between the electron and the nuclei at the paramagnetic centers naturally present in these compounds. The study is carried out, in the temporal domain, by a photoluminescence-based pump-probe technique and taking advantage of the spin-dependent relaxation mechanism via deep paramagnetic centers in GaAsN bulk. We demonstrate a novel detection scheme of the coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence in zero external magnetic field and without the need of electron spin resonance techniques. GaAsBi semiconductors provide new opportunities for many optoelectronic applications thanks to possibility of greatly modulate the band gap and the spin-orbit interaction with the bismuth concentration. Using time-resolved photoluminescence spectroscopy experiment, we have characterized the optical and spin properties of bulk and quantum well GaAsBi structures elaborated by molecular beam epitaxy in a wide range of Bi-content. The experimental results revealed, on the one hand, the localization effect of exciton at low temperature and, on the other hand, the marked decrease of electron spin relaxation time when bismuth content increases. These results are consistent with Dyakonov-Perel spin relaxation mechanism whose efficiency is enhanced by the strong spin-orbit coupling interaction in GaAsBi alloy. The third study is focused on the demonstration of the control of the electron spin relaxation time in the III-V semiconductors by taking advantage of the symmetry properties allied to the piezoelectric effects in InGaAs (111)B heterostructures, without the need of any external electric field. We show that, in this system, the particular direction (111) associated with parameters related to InGaAs quantum wells such as indium concentration and quantum well width allows the control of spin electron relaxation time via piezoelectric field induced by the strain amplitude in the well. These observations demonstrate the possibility of monitoring electron spin relaxation process using intrinsic quantum confined structures, making them ideal candidates for use in quantum information storage and processing devices.; Ce travail de thèse est consacré à l’étude et au contrôle des propriétés de spin des électrons dans des structures à base de semi-conducteurs GaAs : GaAsN, GaAsBi et InGaAs. L'objectif est de donner une description fine de leurs propriétés électronique afin d'appréhender leur potentiel pour des applications en optoélectronique et spintronique. Nous avons focalisé l'étude des propriétés de spin des semi-conducteurs à base de nitrure dilué GaAsN sur les propriétés de l'interaction hyperfine entre l'électron et les noyaux des centres paramagnétiques naturellement présents dans ces matériaux. L'étude est réalisée par des expériences de photoluminescence pompe-sonde, en tirant parti du mécanisme de filtrage de spin par les centres paramagnétiques profonds présents dans le GaAsN massif : la recombinaison dépendante du spin (SDR). Nous démontrons, via l'enregistrement de la dynamique de la photoluminescence bande à bande, une nouvelle technique de détection des oscillations de spin cohérentes électron-noyau dues à l'interaction hyperfine. Ces oscillations sont observées dans l'application d'un champ magnétique externe et sans la nécessité d'utiliser les techniques de résonance de spin électronique. La caractérisation des matériaux bismures dilués GaAsBi en couches massives et en puits quantiques élaborés par épitaxie par jet moléculaire avec différentes concentrations de bismuth avec des expériences de spectroscopie de photoluminescence résolue en temps et en polarisation permet l’étude des propriétés de spin des électrons. Les résultats expérimentaux ont révélé une nette diminution du temps de relaxation de spin des électrons lorsque la fraction de bismuth augmente. Cette réduction significative du temps de relaxation de spin est liée à l'augmentation du couplage spin-orbite dans le matériau GaAsBi. La dynamique de relaxation observée est en bon accord avec le modèle de D'yakonov-Perel. Une troisième étude a porté sur le contrôle et la manipulation de spin des électrons dans les puits quantiques à semi-conducteurs III-V InGaAs/GaAs. Les hétérostructures élaborées sur des substrats d'orientation (111) présentent des propriétés de symétries particulières, qui combinées aux propriétés piézoélectriques, permettent sans application d’un champ électrique externe, de bloquer ou accélérer la dynamique de relaxation de spin. Ces observations démontrent la possibilité de contrôler le spin des porteurs à l'aide des propriétés intrinsèques de structures à puits quantiques, ce qui en fait de très bons candidats pour des applications futures de traitement et de stockage de l'information quantiques.

International audience; We review measurements of angle and time resolved photoelectron spectroscopy on the surface states of the Bi(1 1 1) surface. The work covers several aspects of these surface states, discussing the topological properties, the strong anisotropy of the spin–orbit splitting and the dynamical relaxation of photoexcited electrons. Since time resolved experiments disentagle interaction processes in real time, the reported data offer a novel perspective on the motion of charge carriers in surface states and will serve as an unuseful reference for other systems with strong spin–orbit coupling.

We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeCl under applied pressures up to ~2.5 GPa. We observe two distinct oscillation frequencies, corresponding to the Rashba-split inner and outer Fermi surfaces. BiTeCl has a conduction band bottom that is split into two sub-bands due to the strong Rashba coupling, resulting in two spin-polarized conduction bands as well as a Dirac point. Our results suggest that the chemical potential lies above this Dirac point, giving rise to two Fermi surfaces. We use a simple two-band model to understand the pressure dependence of our sample parameters. Comparing our results on BiTeCl to previous results on BiTeI, we observe similar trends in both the chemical potential and the Rashba splitting with pressure., 6 pages, 5 figures

Layered halide hybrid organic-inorganic perovskites (HOP) have been the subject of intense investigation before the rise of three-dimensional (3D) HOP and their impressive performance in solar cells. Recently, layered HOP have also been proposed as attractive alternatives for photostable solar cells and revisited for light-emitting devices. In this review, we combine classical solid-state physics concepts with simulation tools based on density functional theory to overview the main features of the optoelectronic properties of layered HOP. A detailed comparison between layered and 3D HOP is performed to highlight differences and similarities. In the same way as the cubic phase was established for 3D HOP, here we introduce the tetragonal phase with D symmetry as the reference phase for 2D monolayered HOP. It allows for detailed analysis of the spin-orbit coupling effects and structural transitions with corresponding electronic band folding. We further investigate the effects of octahedral tilting on the band gap, loss of inversion symmetry and possible Rashba effect, quantum confinement, and dielectric confinement related to the organic barrier, up to excitonic properties. Altogether, this paper aims to provide an interpretive and predictive framework for 3D and 2D layered HOP optoelectronic properties., The work at FOTON is supported by Agence Nationale pour la Recherche (SNAP and SuperSansPlomb projects) and was performed using HPC resources from GENCI-CINES/IDRIS Grant 2016-c2012096724. The work at ISCR is supported by Agence Nationale pour la Recherche (TRANSHYPERO project). J.E.’s work is supported by the Fondation d’entreprises banque Populaire de l’Ouest under Grant PEROPHOT 2015. The work at Los Alamos National Laboratory (LANL) was supported by LANL LDRD program and was partially performed at the Center for Nonlinear Studies and at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Science user facility. The Groningen team would like to acknowledge funding from European Research Council (ERC Starting Grant “Hy-SPOD” No. 306983) and by the Foundation for Fundamental Research on Matter (FOM), which is part of The Netherlands Organization for Scientific Research (NWO), under the framework of the FOM Focus Group “Next Generation Organic Photovoltaics”. ICN2 acknowledges support from the Severo Ochoa Program (MINECO, Grant SEV-2013-0295). This project received funding from the European Union's Horizon 2020 research and innovation programme under the grant agreement no. 687008.