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The direct and indirect valleys in Germanium (Ge) are separated by a very small offset, which opens up the prospect of direct tunneling in the ⌈ valley of an extended Ge source tunnel field effect transistor (TFET). We explore the impact of thickness scaling of extended Ge source lateral TFET on the band to band tunneling (BTBT) current. The Ge source is extended inside the gate by 2 nm to confine the tunneling in Ge only. We observe that as the thickness is scaled, the band alignment at the Si/Ge heterojunction changes significantly, which results in an increase in Ge to Si BTBT current. Based on density functional calculations, we first obtain the band structure parameters (bandgap, effective masses, etc.) for the Ge and Si slabs of varying thickness, and these are then used to obtain the thickness dependent Kane's BTBT tunneling parameters. We find that electrostatics improves as the thickness is reduced in the ultra-thin Ge film (≤10 nm). The ON current degrades as we scale down in thickness; however, the subthreshold slope (SSAVG) improves remarkably with thickness scaling due to subsurface BTBT. We predict that 8 nm thin devices offer the best option for optimized ON current and SSAVG. [ABSTRACT FROM AUTHOR]

A 21-year-old female patient, diagnosed with systemic lupus erythematosus (SLE) without renal involvement on remission with oral corticosteroids and hydroxychloroquine for the past 6 months. presented again with a history of polyarthralgia, weight loss, high-grade fever, and neck swelling. Histological and radiological studies confirmed non-Hodgkin's lymphoma subtype diffuse large B-cell type. We thus report an infrequent and intriguing association of non-Hodgkin's disease with SLE. The awareness of the association of non-Hodgkin's disease with SLE and its modes of presentation will help in the early diagnosis and management of such patients. [ABSTRACT FROM AUTHOR]

We study the effect of surface adsorption of 27 different adatoms on the electronic and magnetic properties of monolayer black phosphorus using density functional theory. Choosing a few representative elements from each group, ranging from alkali metals (group I) to halogens (group VII), we calculate the band structure, density of states, magnetic moment and effective mass for the energetically most stable location of the adatom on monolayer phosphorene. We predict that group I metals (Li, Na, K), and group III adatoms (Al, Ga, In) are effective in enhancing the n-type mobile carrier density, with group III adatoms resulting in lower effective mass of the electrons, and thus higher mobilities. Furthermore, we find that the adatoms of transition metals Ti and Fe produce a finite magnetic moment (1.87 and 2.31 μB) in monolayer phosphorene, with different band gap and electronic effective masses (and thus mobilities), which approximately differ by a factor of 10 for spin-up and spin-down electrons, opening up the possibility for exploring spintronic applications. [ABSTRACT FROM AUTHOR]

In 20-40 percent of stroke patients, symptoms evolve during initial hours, resulting in rise of mortality. Early Neurological Deterioration (END) is now an emerging entity. In acute ischemic stroke, it results in increased mortality and functional disability. The incidence rates of early neurological deterioration is 13-37 percent of ischemic stroke. Ischemic stroke is associated with release of glutamate in brain. Serum glutamic oxaloacetic transaminase (SGOT) is the enzyme that metabolise glutamate and facilitates in lowering its level, but its significance is poorly understood. So, SGOT has been studied as predictor in detection of early neurological deterioration of acute ischemic stroke., Material: This was an observational prospective study in 100 in acute ischemic stroke patients with the age more than 18 years and presenting with in 24 hours after symptom onset. Detailed history of the patients was noted and detailed examination was carried out. National Institute of Health Stroke Scale (NIHSS) score was calculated at admission, at 24 hours and at 72 hours to see change in score and detect the early neurological deterioration. Early neurological deterioration was defined by change in the NIHSS Score of 2 or more than 2 with in 72 hours of stroke onset. SGOT level was sent within 24 hours of admission and studied as a contributing marker in detection of Early neurological deterioration., Observation: Among 100 patients enrolled in our study, there were more male patients (82%) with mean age of the 59.8 years. 72% of patients were diabetic and 84% were non alcoholic. Increase in SGOT value was found to be associated with early neurological deterioration(p <0.01). END in stroke patients were found to have SGOT > 40 IU/ml (p= 0.05). Higher level of SGOT (>40 IU/m) l had association with NIHSS at admission (p =0.07), at 48 hours (p=0.04) and at 72 hours (p= 0.03) with mean of 9.66,10.45,11.45 respectively. Positive correlation had been there between SGOT with NIHSS at admission, at 48 hours and at 72 hours ., Conclusion: The increase in SGOT levels during stroke is associated with neurological deterioration. Hence, SGOT may be utilised as predictor in detection of END in acute ischemic stroke as high values of SGOT positively correlated with NIHSS at admission, at 48 hours and 72 hours., (© Journal of the Association of Physicians of India 2011.)