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Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in Ta/Pt/[Co/Al/Pt]$_n$/Co/Al/AlO$_\text{x}$ multilayer stacks comprising $n +1$ Co layers and its impact on the magnetic properties of the multilayers. We demonstrate that the perpendicular magnetic anisotropy can be reversibly quenched through gate-driven oxidation of the intermediary Al layer between Co and AlO$_\text{x}$, enabling dynamic control of the magnetic layers contributing to the out-of-plane remanence - varying between $n$ and $n +1$. For multilayer configurations with $n = 2$ and $n = 4$, we observe reversible and non-volatile additions of 1/3 and 1/5, respectively, to the anomalous Hall effect amplitude based on the applied gate voltage. Magnetic imaging reveals that the gate-induced spin-reorientation transition occurs through the propagation of a single 90$^{\circ}$ magnetic domain wall separating the perpendicular and in-plane anisotropy states. In the 5-repetition multilayer, the modification leads to a doubling of the period of the magnetic domains at remanence. These results demonstrate that the magneto-ionic control of the anisotropy of a single magnetic layer can be used to control the magnetic properties of coupled multilayer systems, extending beyond the gating effects on a single magnetic layer., Comment: 9 pages + 3 pages of supplementary materials, 5 main figures + 6 supplementary figures

We study the motion of a domain wall on an ultrathin magnetic film using the magneto-optical Kerr effect (MOKE). At tiny magnetic fields, the wall creeps only via thermal activation over the pinning centers present in the sample. Our results show that this creep dynamics is highly intermittent and correlated. A localized instability triggers a cascade, akin to aftershocks following a large earthquake, where the pinned wall undergoes large reorganizations in a compact active region for a few seconds. Surprisingly, the size and shape of these reorganizations display the same scale-free statistics of the depinning avalanches in agreement with the quenched Kardar-Parisi-Zhang universality class., Comment: 5 pages, 4 figures

We have studied the effect of He$^+$ irradiation on the dynamics of chiral domain walls in Pt/Co/AlOx trilayers in the creep regime. The irradiation leads to a strong decrease of the depinning field and a non-monotonous change of the effective pinning barriers. The variations of domain wall dynamics result essentially from the strong decrease of the effective anisotropy constant, which increases the domain wall width. The latter is found to present a perfect scaling with the length-scale of the interaction between domain wall and disorder, $\xi$. On the other hand, the strength of the domain wall-disorder interaction, $f_{pin}$, is weakly impacted by the irradiation, suggesting that the length-scales of the disorder fluctuation remain smaller than the domain wall width., Comment: 5 pages, 3 figures

Magnetization reversal and domain wall dynamics in Pt/Co/AlOx trilayers have been tuned by He+ ion irradiation. Fluences up to 1.5x10$^{15}$ ions/cm$^2$ strongly decrease the perpendicular magnetic anisotropy (PMA), without affecting neither the spontaneous magnetization nor the strength of the Dzyaloshinskii-Moriya interaction (DMI). This confirms the robustness of the DMI interaction against interfacial chemical intermixing, already predicted by theory. In parallel with the decrease of the PMA in the irradiated samples, a strong decrease of the depinning field is observed. This allows the domain walls to reach large maximum velocities with lower magnetic fields with respect to those needed for the pristine films. Decoupling PMA from DMI can therefore be beneficial for the design of low energy devices based on domain wall dynamics. When the samples are irradiated with larger He+ fluences, the magnetization gets close to the out-of-plane/in-plane reorientation transition where 100nm size magnetic skyrmions are stabilized. We observe that as the He+ fluence increases, the skyrmion size decreases while these magnetic textures become more stable against the application of an external magnetic field., Comment: 10 pages, 4 figures

Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softness and magnetostriction in a 30 nm Permalloy film after He$^+$ irradiation. Compared to the as-deposited state, the irradiation treatment reduces the induced anisotropy by a factor ten and the hard axis coercivity by a factor five. In addition, the effective magnetostriction of the film is significantly reduced by a factor ten - below $1\times10^{-7}$ - after irradiation. All the above mentioned effects can be attributed to the isotropic crystallite growth of the Ni-Fe alloy and to the intermixing at the magnetic layer interfaces under light ion irradiation. We support our findings with X-ray diffraction analysis of the textured Ni$_{81}$Fe$_{19}$ alloy. Importantly, the sizable magnetoresistance is preserved after the irradiation. Our results show that compared to traditional annealing methods, the use of He$^+$ irradiation leads to significant improvements in the magnetic softness and reduces strain cross sensitivity in Permalloy films required for 3D positioning and compass applications. These improvements, in combination with the local nature of the irradiation process make our finding valuable for the optimization of monolithic integrated sensors, where classic annealing methods cannot be applied due to complex interplay within the components in the device.

Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films., Comment: 22 pages, 12 figures. Currently under review

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion irradiation to enhance single pulse AOS of Co/Gd bilayer-based synthetic ferrimagnets. The intermixing of the constituent magnetic layers by He ion irradiation was both numerically simulated and experimentally verified. We theoretically modelled the effects of intermixing on AOS using the layered microscopic 3-temperature model and found that AOS is enhanced significantly by breaking the pristine Co/Gd interface through intermixing. Following this notion, we studied the threshold fluence of AOS as a function of He ion irradiation fluence. We found that the AOS threshold fluence can be reduced by almost 30%. Our study reveals the control of AOS by He ion irradiation, which opens up an industrially compatible approach for local AOS engineering.

This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Additionally, the critical fluence at which the absolute value of the magnetostriction is dramatically reduced is identified. Therefore insensitivity to strain of the magnetic stack is nearly reached, as required for many applications. All the above mentioned effects are attributed to the combination of the negative saturation magnetostriction of sputtered Ni, Fe layers and the positive magnetostriction of the Ni$_{x}$Fe$_{1-x}$ alloy at the intermixed interfaces, whose contribution is gradually increased with irradiation. Importantly the irradiation does not alter the layers polycrystalline structure, confirming that post-growth He$^+$ ion irradiation is an excellent tool to tune the magneto-elastic properties of magnetic samples. A new class of spintronic devices can be envisioned with a material treatment able to arbitrarily change the magnetostriction with ion-induced "magnetic patterning".

The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism governing the complex magneto-ionic behaviour in $\text{Ta/CoFeB/}\text{HfO}_2$, we perform ab-initio simulations on various setups comprising $\text{Fe/O, Fe/HfO}_2$ interfaces with different oxygen atom interfacial geometries. After the determination of the more stable interfacial configurations, we calculate the magnetic anisotropy energy on the different unit cell configurations and formulate a possible mechanism that well describes the recent experimental observations in $\text{Ta/CoFeB/}\text{HfO}_2$., Comment: 8 pages, 5 figures

Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni$_{0.33}$Co$_{0.67}$O heterostructures. Irradiation using $He^+$ leads to an expansion of the Ni$_{0.33}$Co$_{0.67}$O lattice due to strain relaxation. At low He+ fluence ($\leq$ 2$\times$10$^{14}$ ions cm$^{-2}$), the redox-induced interfacial magnetic moment initially increases, owing to enhanced oxygen migration. At higher fluence, the exchange bias is suppressed due to reduction of pinned uncompensated interfacial Ni$_{0.33}$Co$_{0.67}$O spins. For oxygen implanted samples, an initial lattice expansion below a dose of 5$\times$10$^{15}$ cm$^{-2}$ is subsequently dominated at higher dose by a lattice contraction and phase segregation into NiO and CoO-rich phases, which in turn alters the exchange bias. These results highlight the possibility of ion irradiation and implantation as an effective means to tailor magneto-ionic effects., Comment: 20 pages, 4 figures

Deep learning has an increasing impact to assist research, allowing, for example, the discovery of novel materials. Until now, however, these artificial intelligence techniques have fallen short of discovering the full differential equation of an experimental physical system. Here we show that a dynamical neural network, trained on a minimal amount of data, can predict the behavior of spintronic devices with high accuracy and an extremely efficient simulation time, compared to the micromagnetic simulations that are usually employed to model them. For this purpose, we re-frame the formalism of Neural Ordinary Differential Equations (ODEs) to the constraints of spintronics: few measured outputs, multiple inputs and internal parameters. We demonstrate with Spin-Neural ODEs an acceleration factor over 200 compared to micromagnetic simulations for a complex problem -- the simulation of a reservoir computer made of magnetic skyrmions (20 minutes compared to three days). In a second realization, we show that we can predict the noisy response of experimental spintronic nano-oscillators to varying inputs after training Spin-Neural ODEs on five milliseconds of their measured response to different excitations. Spin-Neural ODE is a disruptive tool for developing spintronic applications in complement to micromagnetic simulations, which are time-consuming and cannot fit experiments when noise or imperfections are present. Spin-Neural ODE can also be generalized to other electronic devices involving dynamics., Comment: 16 pages, 4 figures

Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are often characterised by vanishing or modest values of interfacial Dzyaloshinskii-Moriya interaction (DMI), which results in purely Bloch or mixed Bloch-N\'eel domain walls (DWs). Here we investigate the creep evolution of the overall magnetic bubble morphology in these systems under the combined presence of in-plane and out-of-plane magnetic fields and we show that He$^+$ ion irradiation induces a transition of the internal DW structure towards a fully N\'eel spin texture. This transition can be correlated to a simultaneous increase in DMI strength and reduction in saturation magnetisation -- which are a direct consequence of the effects of ion irradiation on the bottom and top CoFeB interfaces, respectively. The threshold irradiation dose above which DWs acquire a pure N\'eel character is experimentally found to be between 12 $\times$ 10$^{18}$ He$^+$/m$^2$ and 16 $\times$ 10$^{18}$ He$^+$/m$^2$, matching estimations from the one dimensional DW model based on material parameters. Our results indicate that evaluating the global bubble shape during its expansion can be an effective tool to sense the internal bubble DW structure. Furthermore, we show that ion irradiation can be used to achieve post-growth engineering of a desired DW spin texture.

Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored spin-orbit torques are being developed. A method, which allows one to detect the acting torques in a given system as a function of the magnetization direction is the torque-magnetometry method based on a higher harmonics analysis of the anomalous Hall-effect. Here we show that the effective fields acting on magnetic domain walls that govern the efficiency of their dynamics require a sophisticated analysis taking into account the full angular dependence of the torques. Using a 1-D model we compared the spin orbit torque efficiencies by depinning measurements and spin torque magnetometry. We show that the effective fields can be accurately determined and we find good agreement. Thus our method allows us now to rapidly screen materials and predict the resulting quasi-particle dynamics., Comment: 15 page, 3 figures

In magnetic wires with perpendicular anisotropy, moving domain with only current or only circularly polarized light requires a high power. Here, we propose to reduce it by using both short current pulses and femtosecond laser pulses simultaneously. The wires were made out of perpendicularly magnetized film of Pt/Co/Ni/Co/Pt. The displacement of the domain wall is found to be dependent on the laser helicity. Based on a quantitative analysis of the current-induced domain wall motion, the spin orbit torque contribution can be neglected when compared to the spin transfer torque contribution. The effective field of the spin transfer torque is extracted from the pulsed field domain wall measurements. Finally, our result can be described using the Fatuzzo-Labrune model and considering the effective field due to the polarized laser beam, the effective field due to spin transfer torque, and the Gaussian temperature distribution of the laser spot., Comment: 14 pages, 4 figures

CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a spin-polarized current, and this limits the perspectives of racetrack memory driven by the current-in-plane mechanism. To investigate this phenomenon, we performed experiments of DW velocity measurement by applying a magnetic field and a current simultaneously. Working in the precessional regime, we have been able to see a very important effect of the spin-polarized current, which allows evaluating the polarization rate of the charge carriers. An unexpected quite low spin polarization rate down to 0.26 have been obtained, which can explain the low efficiency of DW motion induced by the spin-polarized current. Possible reasons for this low rate are analyzed, such as the spin relaxation in the Ta layer., Comment: 19 pages, 5 figures, including supplementary materials

We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing fluences from 6 to 20$\times10^{14}$~He$^{+}$/cm$^{2}$, we are able to tune $\mathcal{N}$ in an in-plane field from strongly positive to moderately negative. As the STNO microwave signal properties are mainly governed by $\mathcal{N}$, we can in this way directly control the threshold current, the current tunability of the frequency, and the STNO linewidth. In particular, we can dramatically improve the latter by more than two orders of magnitude. Our results are in good agreement with the theory for nonlinear auto-oscillators, confirm theoretical predictions of the role of nonlinearity, and demonstrate a straightforward path towards improving the microwave properties of STNOs., Comment: 5 pages, 4 figures

Spin-orbit torque provides a powerful means of manipulating domain walls along magnetic wires. However, the current density required for domain wall motion is still too high to realize low power devices. Here we experimentally demonstrate helicity-dependent domain wall motion by combining synchronized femtosecond laser pulses and short current pulses in Co/Ni/Co ultra-thin film wires with perpendicular magnetization. Domain wall can remain pinned under one laser circular helicity while depinned by the opposite circular helicity. Thanks to the all-optical helicity-dependent effect, the threshold current density due to spin-orbit torque can be reduced by more than 50%. Based on this joint effect combining spin-orbit torque and helicity-dependent laser pulses, an optoelectronic logic-in-memory device has been experimentally demonstrated. This work enables a new class of low power spintronic-photonic devices beyond the conventional approach of all-optical switching or all-current switching for data storage., Comment: 21 pages, 5 figures

Magnetic sensors based on the magnetoresistance effects have a promising application prospect due to their excellent sensitivity and advantages in terms of the integration. However, competition between higher sensitivity and larger measuring range remains a problem. Here, we propose a novel mechanism for the design of magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic Domain Wall (DW) in the free layer of a spin valve or a magnetic tunnel junction. Performances of devices based on this mechanism, such as the sensitivity and the measuring range can be tuned by manipulating the geometry of the device, without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via micromagnetic simulation., Comment: 4 figures, 13 pages

We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 {\mu}m. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic fields as the size of the elements is reduced with a mean switching field varying as 1/w. We show that this mechanism can be explained by the nucleation of a pinned magnetic domain wall (DW) at the edges of the nanodots where damages are introduced by the patterning process. As the surface tension (Laplace pressure) applied on the DW increases when reducing the size of the nanodots, we demonstrate that the depinning field to reverse the entire elements varies as 1/w. These results suggest that the presence of DWs has to be considered in the switching process of nanoscale elements and open a path toward scalable spintronic devices.

The surface energy of a magnetic Domain Wall (DW) strongly affects its static and dynamic behaviours. However, this effect was seldom directly observed and many related phenomena have not been well understood. Moreover, a reliable method to quantify the DW surface energy is still missing. Here, we report a series of experiments in which the DW surface energy becomes a dominant parameter. We observed that a semicircular magnetic domain bubble could spontaneously collapse under the Laplace pressure induced by DW surface energy. We further demonstrated that the surface energy could lead to a geometrically induced pinning when the DW propagates in a Hall cross or from a nanowire into a nucleation pad. Based on these observations, we developed two methods to quantify the DW surface energy, which could be very helpful to estimate intrinsic parameters such as Dzyaloshinskii-Moriya Interactions (DMI) or exchange stiffness in magnetic ultra-thin films., Comment: 14 pages, 6 figures

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics.

Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive spintronic memory based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. However, storage capacity issue is always one of the most serious bottlenecks hindering its application for practical systems. This paper focuses on the potential of racetrack memory towards large capacity. The investigations covering from device level to system level have been carried out. Various alternative mechanisms to improve the capacity of racetrack memory have been proposed and elucidated, e.g. magnetic field assistance, chiral DW motion and voltage-controlled flexible DW pinning. All of them can increase nanowire length, allowing enhanced feasibility of large-capacity racetrack memory. By using SPICE compatible racetrack memory electrical model and commercial CMOS 28 nm design kit, mixed simulations are performed to validate their functionalities and analyze their performance. System level evaluations demonstrate the impact of capacity improvement on overall system. Compared with traditional SRAM based cache, racetrack memory based cache shows its advantages in terms of execution time and energy consumption.

We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show for the first time depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents parallel to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared to previously used measurements for just two field directions (parallel and perpendicular to the DW) and shows the sensitivity of the spin-orbit torque to the precise DW structure and pinning sites., Comment: 11 pages, 3 figures

Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effects on DW velocities have only been observed so far in the creep regime where DW velocities are low due to strong interactions with pinning sites. Here, we show gate voltage modulation of DW velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces., Comment: 21 pages, 6 figures

We report direct observation of charge accumulation effect on magnetization reversal in a Pt/Co(0.5 nm)/Pt(0.5 nm)/Al2O3 structure with perpendicular anisotropy. By imaging magnetic domain with polar Kerr microscopy, we evidence that positive charges accumulating at the Pt/Al2O3 interface result in favoring magnetic domain wall propagation, while negative charges hinder domain wall nucleation and propagation. Our results suggest that magnetic properties in Co layer can be strongly influenced by 5d electron accumulation/depletion in an ultrathin Pt layer., Comment: 4 pages, 4 figures, added references

Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an electric field in a nanowire consisting of a laterally polarized piezoelectric bar inducing a giant strain in a ferromagnetic spin-valve. We propose to use such novel domain wall gate as an elementary brick to generate a complete set of boolean logic functions or stabilize domain walls in high density memory applications., Comment: 16 pages, 4 figures

We present a ferromagnetic resonance (FMR) study of the effect of Helium ion irradiation on the magnetic anisotropy, the linewidth and the Gilbert damping of a Co/Ni multilayer coupled to Co/Pd bilayers. The perpendicular magnetic anisotropy decreases linearly with He ion fluence, leading to a transition to in-plane magnetization at a critical fluence of 5x10^{14} ions/cm^2. We find that the damping is nearly independent of fluence but the FMR linewidth at fixed frequency has a maximum near the critical fluence, indicating that the inhomogeneous broadening of the FMR line is a non-monotonic function of the He ion fluence. Based on an analysis of the angular dependence of the FMR linewidth, the inhomogeneous broadening is associated with spatial variations in the magnitude of the perpendicular magnetic anisotropy. These results demonstrate that ion irradiation may be used to systematically modify the magnetic anisotropy and distribution of magnetic anisotropy parameters of Co/Pd/Co/Ni multilayers for applications and basic physics studies.