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Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spin qubits to date due to the small qubit size, which makes it difficult to control qubits without creating crosstalk errors. Here, we use a four-qubit silicon processor with every operation above the fault tolerant limit and demonstrate Grover's algorithm with a ~95% probability of finding the marked state, one of the most successful implementations to date. Our four-qubit processor is made of three phosphorus atoms and one electron spin precision-patterned into 1.5 nm${}^2$ isotopically pure silicon. The strong resulting confinement potential, without additional confinement gates that can increase cross-talk, leverages the benefits of having both electron and phosphorus nuclear spins. Significantly, the all-to-all connectivity of the nuclear spins provided by the hyperfine interaction not only allows for efficient multi-qubit operations, but also provides individual qubit addressability. Together with the long coherence times of the nuclear and electron spins, this results in all four single qubit fidelities above 99.9% and controlled-Z gates between all pairs of nuclear spins above 99% fidelity. The high control fidelities, combined with >99% fidelity readout of all nuclear spins, allows for the creation of a three-qubit Greenberger-Horne-Zeilinger (GHZ) state with 96.2% fidelity, the highest reported for semiconductor spin qubits so far. Such nuclear spin registers can be coupled via electron exchange, establishing a path for larger scale fault-tolerant quantum processors., Comment: 16 pages, 9 figures, 3 tables

Strong singularities in the electronic density of states amplify correlation effects and play a key role in determining the ordering instabilities in various materials. Recently high order van Hove singularities (VHSs) with diverging power-law scaling have been classified in single-band electron models. We show that the 110 surface of Bismuth exhibits high order VHS with an usually high density of states divergence $\sim (E)^{-0.7}$. Detailed mapping of the surface band structure using scanning tunneling microscopy and spectroscopy combined with first-principles calculations show that this singularity occurs in close proximity to Dirac bands located at the center of the surface Brillouin zone. The enhanced power-law divergence is shown to originate from the anisotropic flattening of the Dirac band just above the Dirac node. Such near-coexistence of massless Dirac electrons and ultra-massive saddle points enables to study the interplay of high order VHS and Dirac fermions.

Exotic electronic states are realized in novel quantum materials. This field is revolutionized by the topological classification of materials. Such compounds necessarily host unique states on their boundaries. Scanning tunneling microscopy studies of these surface states have provided a wealth of spectroscopic characterization, with the successful cooperation of ab initio calculations. The method of quasiparticle interference imaging proves to be particularly useful for probing the dispersion relation of the surface bands. Herein, how a variety of additional fundamental electronic properties can be probed via this method is reviewed. It is demonstrated how quasiparticle interference measurements entail mesoscopic size quantization and the electronic phase coherence in semiconducting nanowires; helical spin protection and energy-momentum fluctuations in a topological insulator; and the structure of the Bloch wave function and the relative insusceptibility of topological electronic states to surface potential in a topological Weyl semimetal.

Fluorescence microscopy is a widely used method among cell biologists for studying the localization and co-localization of fluorescent protein. For microbial cell biologists, these studies often include tedious and time-consuming manual segmentation of bacteria and of the fluorescence clusters or working with multiple programs. Here, we present MicroAnalyzer - a tool that automates these tasks by providing an end-to-end platform for microscope image analysis. While such tools do exist, they are costly, black-boxed programs. Microanalyzer offers an open-source alternative to these tools, allowing flexibility and expandability by advanced users. MicroAnalyzer provides accurate cell and fluorescence cluster segmentation based on state-of-the-art deep-learning segmentation models, combined with ad-hoc post-processing and Colicoords - an open-source cell image analysis tool for calculating general cell and fluorescence measurements. Using these methods, it performs better than generic approaches since the dynamic nature of neural networks allows for a quick adaptation to experiment restrictions and assumptions. Other existing tools do not consider experiment assumptions, nor do they provide fluorescence cluster detection without the need for any specialized equipment. The key goal of MicroAnalyzer is to automate the entire process of cell and fluorescence image analysis "from microscope to database", meaning it does not require any further input from the researcher except for the initial deep-learning model training. In this fashion, it allows the researchers to concentrate on the bigger picture instead of granular, eye-straining labor

Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wavefunctions that occupy it determine the functionality and the topological nature of the superconducting state induced therein. Here we study this buried interface by performing spectroscopic mappings of superconducting aluminum islands epitaxially grown in-situ on indium arsenide nanowires. We find unexpected robustness of the hybrid system as the direct contact with the aluminum islands does not lead to any change in the chemical potential of the nanowires, nor does it induce a significant band bending in their vicinity. We attribute this to the presence of surface states bound to the facets of the nanowire. Such surface states, that are present also in bare nanowires prior to aluminum deposition, pin the Fermi-level thus rendering the nanowires resilient to surface perturbations. The aluminum islands further display Coulomb blockade gaps and peaks that signify the formation of a resistive tunneling barrier at the InAs-Al interface. At low energies we identify a potential energy barrier that further suppresses the transmittance through the interface. A corresponding barrier exists in bare semiconductors between surface states and the accumulation layer, induced to maintain charge neutrality. Our observations elucidate the delicate interplay between the resistive nature of the InAs-Al interface and the ability to proximitize superconductivity and tune the chemical potential in semiconductor-superconductor hybrid nanowires., Comment: 32 pages, 10 figures

Bulk boundary correspondence in topological materials allows to study their bulk topology through the investigation of their topological boundary modes. However, for classes that share similar boundary phenomenology, the growing diversity of topological phases may lead to ambiguity in the topological classification of materials. Such is the current status of bulk bismuth. While some theoretical models indicate that bismuth possesses a trivial topological nature, other theoretical and experimental studies suggest non-trivial topological classifications such as a strong or a higher order topological insulator, both of which hosts helical modes on their boundaries. Here we use a novel approach to resolve the topological classification of bismuth by spectroscopically mapping the response of its boundary modes to a topological defect in the form of a screw dislocation (SD). We find that the edge mode extends over a wide energy range, and withstands crystallographic irregularities, without showing any signs of backscattering. It seems to bind to the bulk SD, as expected for a topological insulator (TI) with non-vanishing weak indices. We argue that the small scale of the bulk energy gap, at the time reversal symmetric momentum $L$, positions bismuth within the critical region of a topological phase transition to a strong TI with non-vanishing weak indices. We show that the observed boundary modes are approximately helical already on the $\mathbb{Z}_2$ trivial side of the topological phase transition. This work opens the door for further possibilities to examine the response of topological phases to crystallographic topological defects, and to uniquely explore their associated bulk boundary phenomena.

The higher the energy of a particle is above equilibrium the faster it relaxes due to the growing phase-space of available electronic states it can interact with. In the relaxation process phase coherence is lost, thus limiting high energy quantum control and manipulation. In one-dimensional systems high relaxation rates are expected to destabilize electronic quasiparticles. We show here that the decoherence induced by relaxation of hot electrons in one-dimensional semiconducting nanowires evolves non-monotonically with energy such that above a certain threshold hot-electrons regain stability with increasing energy. We directly observe this phenomenon by visualizing for the first time the interference patterns of the quasi-one-dimensional electrons using scanning tunneling microscopy. We visualize both the phase coherence length of the one-dimensional electrons, as well as their phase coherence time, captured by crystallographic Fabry-Perot resonators. A remarkable agreement with a theoretical model reveals that the non-monotonic behavior is driven by the unique manner in which one dimensional hot-electrons interact with the cold electrons occupying the Fermi-sea. This newly discovered relaxation profile suggests a high-energy regime for operating quantum applications that necessitate extended coherence or long thermalization times, and may stabilize electronic quasiparticles in one dimension.

Nanoscale superconducting quantum interference devices (SQUIDs) demonstrate record sensitivities to small magnetic moments, but are typically sensitive only to the field component that is normal to the plane of the SQUID and out-of-plane with respect to the scanned surface. We report on a nanoscale three-junction Pb SQUID which is fabricated on the apex of a sharp tip. Because of its three-dimensional structure, it exhibits a unique tunable sensitivity to both in-plane and out-of-plane fields. We analyze the two-dimensional interference pattern from both numerical and experimental points of view. This device is integrated into a scanning microscope and its ability to independently measure the different components of the magnetic field with outstanding spin sensitivity better than $5\ \frac{\mu_B}{\mathrm{Hz}^{1/2}}$ is demonstrated. This highlights its potential as a local probe of nanoscale magnetic structures.