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Microwave heating methods offer unique advantages in preparations of inorganic solids due to the high heating rates, potentially selective heating, and time/energy reductions. Understanding of these enhancements as well as involved mechanisms is poor due to the lack of available and easily applicable in situ monitoring methods, particularly for samples in the solid state. Existing in situ studies typically rely on access to beamline facilities as well as custom‐built microwave systems, which is in the best case inconvenient and in the worst case not achievable. In situ Raman spectroscopy is an ideal technique as it provides rapid and unambiguous phase identification by a noncontact method. Further, the instrument components are simple and compact, facilitating use in the typical synthetic laboratory. Only a few reports on using Raman spectroscopy for in situ measurements during microwave heating exist, and they all utilize specialized custom reactor setups. In this work, a new Raman measurement system designed to observe inorganic transformations in situ that is readily deployable in a standard, commercially available laboratory scale microwave reactor is described. As a simple demonstration, the anatase‐to‐rutile phase transition in TiO₂ is monitored under both microwave and conventional furnace heating. The excellent time resolution achieved demonstrates the utility of the system in understanding microwave‐assisted methods for the preparation of inorganic compounds. The simplicity will encourage integration by the non‐specialist to understand microwave heating for synthetic preparations and promote wider application of the technique.

In the present study, the effect of the chemical and phase composition on the thermal properties of silicon oxide carbides (SiOC) has been investigated. Dense monolithic SiOC materials with various carbon contents were prepared and characterized with respect to their thermal expansion, as well as thermal conductivity. SiOC glass has been shown to exhibit low thermal expansion (e.g., ca. 3.2 × 10⁻⁶ K⁻¹ for a SiOC sample free of segregated carbon) and thermal conductivity (ca. 1.5 W/(m∙K)). Furthermore, it has been observed that the phase separation, which typically occurs in SiOC exposed to temperatures beyond 1000–1200 °C, leads to a decrease of the thermal expansion (i.e., to 1.83 × 10⁻⁶ K⁻¹ for the sample above); whereas the thermal conductivity increases upon phase separation (i.e., to ca. 1.7 W/(m∙K) for the sample mentioned above). Upon adjusting the amount of segregated carbon content in SiOC, its thermal expansion can be tuned; thus, SiOC glass ceramics with carbon contents larger than 10–15 vol % exhibit similar coefficients of thermal expansion to that of the SiOC glass. Increasing the carbon and SiC content in the studied SiOC glass ceramics leads to an increase in their thermal conductivity: SiOC with relatively large carbon and silicon carbides (SiC) volume fractions (i.e., 12–15 and 20–30 vol %, respectively) were shown to possess thermal conductivities in the range from 1.8 to 2.7 W/(m∙K)