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1,293 results on '"Ren, Tian‐Ling"'

3. Two-dimensional materials for future information technology: status and prospects

Author

Qiu, Hao, Yu, Zhihao, Zhao, Tiange, Zhang, Qi, Xu, Mingsheng, Li, Peifeng, Li, Taotao, Bao, Wenzhong, Chai, Yang, Chen, Shula, Chen, Yiqi, Cheng, Hui-Ming, Dai, Daoxin, Di, Zengfeng, Dong, Zhuo, Duan, Xidong, Feng, Yuhan, Fu, Yu, Guo, Jingshu, Guo, Pengwen, Hao, Yue, He, Jun, He, Xiao, Hu, Jingyi, Hu, Weida, Hu, Zehua, Huang, Xinyue, Huang, Ziyang, Imran, Ali, Kong, Ziqiang, Li, Jia, Li, Qian, Li, Weisheng, Liao, Lei, Liu, Bilu, Liu, Can, Liu, Chunsen, Liu, Guanyu, Liu, Kaihui, Liu, Liwei, Liu, Sheng, Liu, Yuan, Lu, Donglin, Ma, Likuan, Miao, Feng, Ni, Zhenhua, Ning, Jing, Pan, Anlian, Ren, Tian-Ling, Shu, Haowen, Sun, Litao, Sun, Yue, Tao, Quanyang, Tian, Zi-Ao, Wang, Dong, Wang, Hao, Wang, Haomin, Wang, Jialong, Wang, Junyong, Wang, Wenhui, Wang, Xingjun, Wang, Yeliang, Wang, Yuwei, Wang, Zhenyu, Wen, Yao, Wu, Haidi, Wu, Hongzhao, Wu, Jiangbin, Wu, Yanqing, Xia, Longfei, Xiang, Baixu, Xing, Luwen, Xiong, Qihua, Xiong, Xiong, Xu, Jeffrey, Xu, Tao, Xu, Yang, Yang, Liu, Yang, Yi, Yang, Yuekun, Ye, Lei, Ye, Yu, Yu, Bin, Yu, Ting, Zeng, Hui, Zhang, Guangyu, Zhang, Hongyun, Zhang, Jincheng, Zhang, Kai, Zhang, Tao, Zhang, Xinbo, Zhang, Yanfeng, Zhao, Chunsong, Zhao, Yuda, Zheng, Ting, Zhou, Peng, Zhou, Shuyun, Zhu, Yuxuan, Yang, Deren, Shi, Yi, Wang, Han, and Wang, Xinran

Published
2024
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4. Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

Author

Yan, Zhao-Yi, Hou, Zhan, Xue, Kan-Hao, Lu, Tian, Zhao, Ruiting, Xue, Junying, Wu, Fan, Shao, Minghao, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Shen, Penghui, Zhao, Mingyue, Miao, Xiangshui, Lin, Zhaoyang, Liu, Houfang, Tian, He, Yang, Yi, and Ren, Tian-Ling

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that prioritize efficiency. Here, we report that the Landauer-QFLPS model effectively overcomes the above contradiction, where QFLPS means quasi-Fermi-level phase space theory. By connecting the physical pictures of the contact and the intrinsic channel part, we have successfully derived a drain-source current formula including the contact effect. To verify the model, we prepared transistors based on two typical 2DMs, black phosphorus (BP) and molybdenum disulfide (MoS2), the former having ambipolar transport and the latter showing electron-dominant unipolar transport. The proposed new formula could describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover, compared with traditional methods, the proposed model has the advantages of accuracy and efficiency, especially in describing non-monotonic drain conductance characteristics, because the contact effect is self-consistently and compactly packaged as an exponential term. More importantly, we also examined the model at the circuit level. Here, we fabricated a three-bit threshold inverter quantizer circuit based on ambipolar-BP process and experimentally demonstrated that the model can accurately predict the circuit performance. This industry-benign 2DM-FET model is supposed to be very useful for the development of 2DM-FET-based integrated circuits.

Published
2023

5. An efficient model algorithm for two-dimensional field-effect transistors

Author

Yan, Zhao-Yi, Hou, Zhan, Wu, Fan, Zhao, Ruiting, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Xue, Kan-Hao, Liu, Houfang, Tian, He, Yang, Yi, and Ren, Tian-Ling

Subjects
Condensed Matter - Materials Science
Abstract

Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits., Comment: 17 pages, 9 figures

Published
2023

6. An Integrated All-Optical Multimodal Learning Engine Built by Reconfigurable Phase-Change Meta-Atoms

Author

Wang, Yuhao, Song, Jingkai, Shen, Penghui, Yang, Qisheng, Yang, Yi, Ren, Tian-ling, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Fang, Lu, editor, Pei, Jian, editor, Zhai, Guangtao, editor, and Wang, Ruiping, editor

Published
2024
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26. Light-Enhanced Ion Migration in Two-Dimensional Perovskite Single Crystals Revealed in Carbon Nanotubes/Two-Dimensional Perovskite Heterostructure and Its Photomemory Application

Author

Li, Yu-Tao, Ding, Li, Li, Jun-Ze, Kang, Jun, Li, De-Hui, Ren, Li, Ju, Zhen-Yi, Sun, Meng-Xing, Ma, Jia-Qi, Tian, Ye, Gou, Guang-Yang, Xie, Dan, Tian, He, Yang, Yi, Wang, Lin-Wang, Peng, Lian-Mao, and Ren, Tian-Ling

Subjects
Chemical Sciences, Physical Chemistry, Chemical sciences
Abstract

Two-dimensional (2D) hybrid perovskite sandwiched between two long-chain organic layers is an emerging class of low-cost semiconductor materials with unique optical properties and improved moisture stability. Unlike conventional semiconductors, ion migration in perovskite is a unique phenomenon possibly responsible for long carrier lifetime, current-voltage hysteresis, and low-frequency giant dielectric response. While there are many studies of ion migration in bulk hybrid perovskite, not much is known for its 2D counterparts, especially for ion migration induced by light excitation. Here, we construct an exfoliated 2D perovskite/carbon nanotube (CNT) heterostructure field effect transistor (FET), not only to demonstrate its potential in photomemory applications, but also to study the light induced ion migration mechanisms. We show that the FET I-V characteristic curve can be regulated by light and shows two opposite trends under different CNT oxygen doping conditions. Our temperature-dependent study indicates that the change in the I-V curve is probably caused by ion redistribution in the 2D hybrid perovskite. The first principle calculation shows the reduction of the migration barrier of I vacancy under light excitation. The device simulation shows that the increase of 2D hybrid perovskite dielectric constant (enabled by the increased ion migration) can change the I-V curve in the trends observed experimentally. Finally, the so synthesized FET shows the multilevel photomemory function. Our work shows that not only we could understand the unique ion migration behavior in 2D hybrid perovskite, it might also be used for many future memory function related applications not realizable in traditional semiconductors.

Published
2019

33. Micromesh reinforced strain sensor with high stretchability and stability for full‐range and periodic human motions monitoring

Author

Liu, Haidong, primary, Liu, Chang, additional, Luo, Jinan, additional, Tang, Hao, additional, Li, Yuanfang, additional, Liu, Houfang, additional, Wu, Jingzhi, additional, Han, Fei, additional, Liu, Zhiyuan, additional, Guo, Jianhe, additional, Tan, Rongwei, additional, Ren, Tian‐Ling, additional, Qiao, Yancong, additional, and Zhou, Jianhua, additional

Published
2024
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39. Simultaneous synthesis and integration of two-dimensional electronic components

Author

Zhang, Qi, Wang, Xue-Feng, Shen, Shu-Hong, Lu, Qi, Liu, Xiaozhi, Li, Haoyi, Zheng, Jingying, Yu, Chu-Ping, Zhong, Xiaoyan, Gu, Lin, Ren, Tian-Ling, and Jiao, Liying

Abstract

Two-dimensional (2D) materials such as transition metal chalcogenides can be used to create different components of electronic devices, including semiconducting channels and metallic electrodes and interconnects. However, devices are typically fabricated using a step-by-step process that can introduce defects and impurities, leading to a reduction in device performance. Here we show that 2D electronic components can be chemically synthesized and integrated simultaneously in a single step, creating 2D devices in which each component in the active layer is connected via covalent bonds instead of physical interfaces. The approach involves the phase-patterned growth of atomic layers, and, using 2D molybdenum ditelluride (MoTe 2 ) as the active material, we show that it can be used to construct high-performance field-effect transistors (FETs) and arrays of logic devices. We also use the technique to construct FETs with ultrashort gate lengths, bilayered FETs with vertical interconnections and flexible devices.

Published
2019

43. Self‐Powered Photodetector Based on Perovskite/Ge Heterojunction with High Responsivity

Author

Wang, Zeshu, primary, Geng, Xiangshun, additional, Jin, Jialun, additional, Zhang, Peigen, additional, Zhang, Li, additional, Li, Yuanyuan, additional, Du, Jingbo, additional, He, Yichu, additional, Zhang, Minshu, additional, Peng, Jiali, additional, Qin, Ken, additional, Dun, Guanhua, additional, Wang, Chunlin, additional, Tian, He, additional, Xie, Dan, additional, Yang, Yi, additional, and Ren, Tian‐Ling, additional

Published
2024
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49. Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors (Adv. Sci. 34/2023)

Author

Yan, Zhao‐Yi, primary, Hou, Zhan, additional, Xue, Kan‐Hao, additional, Tian, He, additional, Lu, Tian, additional, Xue, Junying, additional, Wu, Fan, additional, Zhao, Ruiting, additional, Shao, Minghao, additional, Yan, Jianlan, additional, Yan, Anzhi, additional, Wang, Zhenze, additional, Shen, Penghui, additional, Zhao, Mingyue, additional, Miao, Xiangshui, additional, Lin, Zhaoyang, additional, Liu, Houfang, additional, Yang, Yi, additional, and Ren, Tian‐Ling, additional

Published
2023
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