Search

Your search keyword '"Rennesson S"' showing total 34 results
Start Over Author "Rennesson S"
34 results on '"Rennesson S"'

1. Ridge polariton laser: different from a semiconductor edge-emitting laser

Author

Souissi, H, Gromovyi, M, Gueye, T, Brimont, C, Doyennette, L, Solnyshkov, D, Malpuech, G, Cambril, E, Bouchoule, S, Alloing, B, Rennesson, S, Semond, F, Zúñiga-Pérez, J, and Guillet, T

Subjects
Physics - Optics
Abstract

We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $\mu$m long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversion-less polaritonic gain about 10 times larger than in equivalent GaN lasers. The modelling of the cavity free spectral range demonstrates the polaritonic nature of the modes.

Published
2022
Full Text
View/download PDF

2. Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength

Author

Brimont, C., Doyennette, L., Kreyder, G., Réveret, F., Disseix, P., Médard, F., Leymarie, J., Cambril, E., Bouchoule, S., Gromovyi, M., Alloing, B., Rennesson, S., Semond, F., Zúñiga-Pérez, J., and Guillet, T.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility., Comment: 145 pages, 8 figures

Published
2020
Full Text
View/download PDF

4. A universal description of III-V/Si epitaxial growth processes

Author

Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., and Cornet, C.

Subjects
Condensed Matter - Materials Science
Abstract

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation., Comment: includes the manuscript file and the supplemental materials

Published
2018
Full Text
View/download PDF

6. On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations.

Author

Vennéguès, P., Largeau, L., Brändli, V., Damilano, B., Tavernier, K., Bernard, R., Courville, A., Rennesson, S., Semond, F., Feuillet, G., and Cornet, C.

Subjects
NUCLEATION, SEMICONDUCTORS, ISLANDS, DISLOCATION density, BORON nitride
Abstract

In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit dislocations. The orientations of the screw components are distributed randomly, and the maximum twist is obtained when all the screw components have the same orientation. The maximum twists are related to the density of misfit dislocations and, therefore, increase with the mismatch between the deposited materials and their substrate. In the second part of the paper, we study five systems having a large distribution of mismatches from 4% to 19%. For the four systems fulfilling the conditions necessary for the application of the model (plastic relaxation of grown islands), the measured maximum twists fit with the calculated values, thereby validating the model. The twists of nucleation islands are related to the mismatch and are, therefore, intrinsic to the material systems. The defects created at the coalescence of twisted islands determine the initial microstructure/defect distribution of the nucleation layer. [ABSTRACT FROM AUTHOR]

Published
2022
Full Text
View/download PDF

7. Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser

Author

Souissi, H., primary, Gromovyi, M., additional, Gueye, T., additional, Brimont, C., additional, Doyennette, L., additional, Solnyshkov, D.D, additional, Malpuech, G., additional, Cambril, E., additional, Bouchoule, S., additional, Alloing, B., additional, Rennesson, S., additional, Semond, F., additional, Zúñiga-Pérez, J., additional, and Guillet, T., additional

Published
2022
Full Text
View/download PDF

9. Proposition of a model elucidating the AlN-on-Si (111) microstructure.

Author

Mante, N., Rennesson, S., Frayssinet, E., Largeau, L., Semond, F., Rouvière, J. L., Feuillet, G., and Vennéguès, P.

Subjects
*MICROSTRUCTURE, *ALUMINUM nitride, *TRANSMISSION electron microscopy, *GRAZING incidence, *DISLOCATIONS in crystals, *SILICON, *X-ray diffraction
Abstract

AlN-on-Si can be considered as a model system for heteroepitaxial growth of highly mismatched materials. Indeed, AlN and Si drastically differ in terms of chemistry, crystalline structure, and lattice parameters. In this paper, we present a transmission electron microscopy and grazing incidence X-ray diffraction study of the microstructure of AlN layers epitaxially grown on Si (111) by molecular beam epitaxy. The large interfacial energy due to the dissimilarities between AlN and Si results in a 3D Volmer-Weber growth mode with the nucleation of independent and relaxed AlN islands. Despite a well-defined epitaxial relationship, these islands exhibit in-plane misorientations up to 6°–7°. We propose a model which quantitatively explains these misorientations by taking into account the relaxation of the islands through the introduction of 60° a-type misfit dislocations. Threading dislocations (TDs) are formed to compensate these misorientations when islands coalesce. TD density depends on two parameters: the islands' misorientation and density. We show that the former is related to the mismatch between AlN and Si, while the latter depends on the growth parameters. A large decrease in TD density occurs during the 3D growth stage by overlap and overgrowth of highly misoriented islands. On the other hand, the TD density does not change significantly when the growth becomes 2D. The proposed model, explaining the misorientations of 3D-grown islands, may be extended to other (0001)-oriented III-nitrides and more generally to any heteroepitaxial system exhibiting a 3D Volmer-Weber growth mode with islands relaxed thanks to the introduction of mixed-type misfit dislocations. [ABSTRACT FROM AUTHOR]

Published
2018
Full Text
View/download PDF

10. How a ridge polariton laser is different from a standard ridge laser

Author

Guillet, T., primary, Souissi, H., additional, Gromovyi, M., additional, Gueye, T., additional, Brimont, C., additional, Doyennette, L., additional, Kreyder, G., additional, Reveret, F., additional, Disseix, P., additional, Medard, F., additional, Leymarie, J., additional, Malpuech, G., additional, Solnyshkov, D., additional, Alloing, B., additional, Rennesson, S., additional, Semond, F., additional, Zuniga-Perez, J., additional, Cambril, E., additional, and Bouchoule, S., additional

Published
2021
Full Text
View/download PDF

11. Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

Author

BRIMONT, Christelle, DOYENNETTE, Laetitia, Kreyder, G., Reveret, F., Disseix, P., Medard, F., LEYMARIE, J., Cambril, E., Bouchoule, S., Gromovyi, M., Alloing, B., RENNESSON, S., Semond, F., Zuniga-perez, J., GUILLET, Thierry, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, Physics::Optics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility., Comment: 145 pages, 8 figures

Published
2020
Full Text
View/download PDF

12. Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

Author

BRIMONT, Christelle, DOYENNETTE, Laetitia, Tabataba-vakili, Farsane, Roland, I., El Kurdi, M., Checoury, X., Sauvage, S., Paulillo, B, Colombelli, R, RENNESSON, S., Frayssinet, Eric, Brault, Julien, Damilano, B., Duboz, J. y., Semond, F., Gayral, B., Boucaud, P., GUILLET, Thierry, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
Abstract

International audience; The integration of nitride semiconductors on a silicon platform is a very promising field for nanophotonic applications in the UV-blue spectral range. Efficient sources are a main topic that can be achieved by compact microlasers based on GaN/AlN and InGaN/GaN multiple quantum wells (MQW) grown on a silicon substrate. The epitaxy of these structures is performed by the controlled-growth of an AlN and GaN buffer layers to prevent from dislocations. To obtain versatile and efficient micro-emitters, the technological development of micro-resonator has been improved for nitride MQW micro-disks on silicon. This unique Nitride-on-Silicon platform has been allowed by releasing the micro-disk membrane with selective under-etching of the silicon substrate. For integrated photonics applications, these micro-disks can be electrically powered but also coupled to optical waveguides to a better extract of the emission. We have already shown that we can reach a few thousand for the quality factor of the microdisks with nitride MQW grown by MBE1 but also in nitride-on-silicon photonic crystal cavities2. The laser emission of the microdisks under optical pumping and at room temperature was obtained over a broad spectral range extending from 275 nm to 470 nm1.Here we investigate the physics of the micro-resonators with InGaN/GaN MQW grown by MOCVD. Photoluminescence (PL) emission is probed under pulsed optical pumping at 266 nm. Laser emission is reached at room temperature at 390 nm. We focus on the gain properties of the InGaN/GaN MQW active layer. We have investigated the temperature dependence of the microlaser threshold vs temperature. We show that the typical T0 for these microlaser is elevated (T0=77K), meaning that the temperature dependence around room temperature is reduced. We also model the spectra to extract the carrier density at threshold. And we will draw up a comparison with InGaN/GaN MQW microlasers grown by MBE.References: 1M. Mexis et al., Optics Letters, vol. 36 p.2203 (2011), Sellés et al., APL 109, 231101 (2016) and Sci. Rep. 6, 21650 (2016), 2F. Tabataba-Vakili et al., APL 2017

Published
2018

13. Propagation of polaritons in GaN waveguides up to 300K

Author

BRIMONT, Christelle, GUILLET, Thierry, DOYENNETTE, Laetitia, Réveret, François, Disseix, Pierre, Médard, François, Leymarie, Joël, Gromovyi, M., Alloing, B, RENNESSON, S., Semond, F., Zúñiga-Pérez, Jesús, Cambril, Edmond, Bouchoule, Sophie, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut Pascal (IP), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR-16-CE24-0021,Plug-and-Bose,Laser à polaritons injecté electriquement à ultra-faible seuil(2016), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
Condensed Matter::Quantum Gases, Condensed Matter::Materials Science, Condensed Matter::Other, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Physics::Optics
Abstract

International audience; Exciton-photon coupling in a waveguide geometry is attracting more and more interest in the field of polaritonics. Waveguide polaritons are obtained when the exciton and the guided mode of a photonic waveguide are brought in the strong coupling regime, in strong analogy with cavity polaritons in Fabry-Perot resonators. One of the first demonstrations of waveguide polaritons was reported in a waveguide embedding InGaAs/GaAs quantum wells, with a Rabi splitting of 6 meV [Walker et al., APL 102, 012109 (2013) and Nat. Comm. 6, 8317 (2015)], leading to the observation of ultra-low power temporal solitons at T=10K. Nitride materials offer the possibility to investigate polariton physics up to room temperature thanks to the large binding energy and large oscillator strength of the excitons in GaN. The first demonstration of strong coupling in nitrides waveguides was based on InGaN multiple quantum wells, with a Rabi splitting of 63 meV at 4K, and a strong coupling observed up to T=100K [Ciers et al., Phys. Rev. Applied 7, 034019 (2015)]. In the meantime, we have achieved polariton lasing in a waveguide geometry for the first time in another wide bandgap material, ZnO [Jamadi et al., Arxiv:1708.00501], up to room-temperature.Here we report the enhancement of the Rabi splitting in a bulk GaN slab waveguide, compared to the case of multiple quantum wells. The Rabi splitting in a monomode GaN waveguide reaches 140meV, and slightly decreases to 100 meV at T=300K. To measure it, we have fabricated diffraction gratings on the waveguides and performed polarization-resolved Fourier-space imaging of the TE and TM modes dispersion. Besides, through Fourier-space imaging and spectral filtering of the photoluminescence image we have measured the polaritons propagation length as a function of the detuning: at T=10K it amounts to 10µm at zero detuning and 30µm at more negative detuning (= -Rabi); most importantly, similar propagation lengths are observed up to room temperature.The increased Rabi splitting and large propagation lengths pave the way for the demonstration of polariton lasers at room temperature in a GaN waveguide, and for a control of the nonlinear processes in polariton fluids of light.

Published
2018

14. Comparison of UV-C and blue emitting nitride-on-silicon microdisk lasers

Author

Sellés, Julien, GUILLET, Thierry, Crepel, V., Gayral, B., Damilano, B., Leroux, M., Mexis, Meletios, RENNESSON, S., Semond, F., Roland, I., Checoury, X., Boucaud, P., BRIMONT, Christelle, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Aigle, L2c, Blanc 2013 - Optique quantique et non-linéaire dans des cavités nitrures - - QUANONIC2013 - ANR-13-BS10-0010 - Blanc 2013 - VALID, Laboratoires d'excellence - Réseau national sur GaN - - GANEX2011 - ANR-11-LABX-0014 - LABX - VALID, and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
[PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
Abstract

International audience; Microlasers covering the UV to blue spectral range are important building blocks for biochemical detection applications. This work presents a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending from 275 nm to 470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. The fabrication process is based on e-beam lithography and the release of the nitride membrane after selective under-etching of the silicon susbtrate, and has led to high quality factor resonators, microdisks as well as photonic crystal cavities, within the same platform. A detailed comparison of these microlasers leads to the conclusion that for our Q>1000 microdisk resonators, the pumping threshold is determined by the type of optical excitation, resonant with the barrier or with the MQW excited states, and the emission efficiency of the MQWs [Sellés et al., APL 109, 231101 (2016) and Sci. Rep. 6, 21650 (2016)].

Published
2018

15. III-nitride on silicon electrically injected microrings for nanophotonic circuits

Author

Tabataba-Vakili, F., primary, Rennesson, S., additional, Damilano, B., additional, Frayssinet, E., additional, Duboz, J.-Y., additional, Semond, F., additional, Roland, I., additional, Paulillo, B., additional, Colombelli, R., additional, Kurdi, M. El, additional, Checoury, X., additional, Sauvage, S., additional, Doyennette, L., additional, Brimont, C., additional, Guillet, T., additional, Gayral, B., additional, and Boucaud, P., additional

Published
2019
Full Text
View/download PDF

16. Towards III-nitride on silicon active photonic circuits

Author

Tabataba-Vakili, F., primary, Rennesson, S., additional, Damilano, B., additional, Doyennette, L., additional, Brimont, C., additional, Guillet, T., additional, Frayssinet, E., additional, Brault, J., additional, Duboz, J.-Y., additional, Roland, I., additional, Kurdi, M. El, additional, Checoury, X., additional, Sauvage, S., additional, Semond, F., additional, Boucaud, P., additional, and Gayral, B., additional

Published
2019
Full Text
View/download PDF

17. Nitride-on-silicon platform for UV-visible photonics with integrated microlaser sources

Author

Sellés, Julien, Guillet, Thierry, Crepel, V., Gayral, B., Damilano, B., Leroux, M., Mexis, Meletios, Rennesson, S., Semond, F., Tabataba-Vakili, Farsane, Roland, I., Checoury, X., Boucaud, Philippe, Brimont, Christelle, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Optique des états collectifs et du spin (OECS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
Abstract

International audience; Abstract-Biochemical detection applications and on-chip optical interconnects are examples of the useful applications considered for integrated photonic platforms dedicated to the UV and visible spectral range. This achievement requires the realization of efficient and compact microlaser sources that can be coupled to optical waveguides and are compatible with photonic circuitry. We develop a cost-effective practical approach relying on the controlled growth of thin AlN buffer layers on silicon substrates, followed by the growth of multiple quantum wells (MQW) GaN/AlN (for UV operation), or InGaN/GaN MQWs (for violet and blue operation) with a high radiative efficiency up to T=300K. This unique Nitride-on-Silicon platform could be released into a membrane by the selective under-etching of the silicon substrate.We present a series of microdisk lasers operating at room temperature under pulsed optical excitation over a broad spectral range extending from 275nm to 470nm. All microdisks present a Q factor above 1000 and reach 4000 in the best resonators. We are able to investigate the gain threshold of the different active layers. The microlasers operate under pulsed optical excitation, and the lasing threshold is reduced by a factor 10 from deep-UV GaN/AlN microdisks to the violet InGaN/GaN ones. This work allows us to expect a variety of integrated photonics applications, including for example multi-color integrated laser sources: we demonstrate here the versatility of this nitride-on-silicon platform, and the first realization on this platform of efficient active layers for a tunable lasing action over a 200nm broad UV to visible spectral range. [1,2].Acknowledgements: The authors acknowledge support from the projects GANEX (ANR-11-LABX-0014) and QUANONIC (ANR-13-BS10-0010). GANEX belongs to the public funded 'Investissements d'Avenir' program managed by the French ANR agency. This work was also partly supported by the RENATECH network.REFERENCES1.Sellés et al., APL 109, 231101 (2016)2.Sci. Rep. 6, 21650 (2016)

Published
2017

18. Universal description of III-V/Si epitaxial growth processes

Author

Lucci, I., primary, Charbonnier, S., additional, Pedesseau, L., additional, Vallet, M., additional, Cerutti, L., additional, Rodriguez, J.-B., additional, Tournié, E., additional, Bernard, R., additional, Létoublon, A., additional, Bertru, N., additional, Le Corre, A., additional, Rennesson, S., additional, Semond, F., additional, Patriarche, G., additional, Largeau, L., additional, Turban, P., additional, Ponchet, A., additional, and Cornet, C., additional

Published
2018
Full Text
View/download PDF

19. III-Nitride on silicon photonic circuits

Author

Boucaud, P., primary, Roland, I., additional, Zeng, Y., additional, Tabataba-Vakili, F., additional, Kurdi, M. El, additional, Sauvage, S., additional, Checoury, X., additional, Gromovyi, M., additional, Rennesson, S., additional, Semond, F., additional, Duboz, J.-Y., additional, de Micheli, M., additional, Selles, J., additional, Brimont, C., additional, Guillet, T., additional, and Gayral, B., additional

Published
2017
Full Text
View/download PDF

21. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Author

Sánchez-Martín, H, primary, García-Pérez, Ó, additional, Pérez, S, additional, Altuntas, P, additional, Hoel, V, additional, Rennesson, S, additional, Cordier, Y, additional, González, T, additional, Mateos, J, additional, and Íñiguez-de-la-Torre, I, additional

Published
2017
Full Text
View/download PDF

22. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Author

Sellés, J., primary, Crepel, V., additional, Roland, I., additional, El Kurdi, M., additional, Checoury, X., additional, Boucaud, P., additional, Mexis, M., additional, Leroux, M., additional, Damilano, B., additional, Rennesson, S., additional, Semond, F., additional, Gayral, B., additional, Brimont, C., additional, and Guillet, T., additional

Published
2016
Full Text
View/download PDF

23. STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

Author

Lecourt, F., Douvry, Y., Lesecq, M., Defrance, N., AGBOTON, A., OKODA, E., Hoel, V., De Jaeger, J.C., Chmielowska, M., RENNESSON, S., Chenot, S., Cordier, Y., Lacheze, L., Bouzid, S., Frijlink, P., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), OMMIC, and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
[SPI]Engineering Sciences [physics]
Published
2013

24. AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Author

ALTUNTAS, P., Defrance, N., Lesecq, M., Cutivet, A., AGBOTON, A., Cordier, Y., Chmielowska, M., RENNESSON, S., Camus, J., Ait Aissa, K., Le Brizoual, L., Djouadi, M. A., De Jaeger, J.C., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics], MODFETs, silicon, semiconductor device fabrication, GaN
Abstract

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and max = 0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling 16 W/mm static heat dissipation

Published
2013

25. Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

Author

Lecourt, F., Defrance, N., Rennesson, S., Hoel, Virginie, Cordier, Y., de Jaeger, Jean-Claude, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2012

29. High quality factor photonic resonators for nitride quantum dots

Author

Guillet, T., primary, Mexis, M., additional, Sergent, S., additional, Néel, D., additional, Rennesson, S., additional, Brimont, C., additional, Bretagnon, T., additional, Gil, B., additional, Sam‐Giao, D., additional, Gayral, B., additional, Semond, F., additional, Leroux, M., additional, David, S., additional, Checoury, X., additional, and Boucaud, P., additional

Published
2012
Full Text
View/download PDF

32. Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon.

Author

Tabataba-Vakili F, Doyennette L, Brimont C, Guillet T, Rennesson S, Damilano B, Frayssinet E, Duboz JY, Checoury X, Sauvage S, El Kurdi M, Semond F, Gayral B, and Boucaud P

Abstract

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors.

Published
2019
Full Text
View/download PDF

33. Efficient second harmonic generation in low-loss planar GaN waveguides.

Author

Gromovyi M, Brault J, Courville A, Rennesson S, Semond F, Feuillet G, Baldi P, Boucaud P, Duboz JY, and De Micheli MP

Abstract

We demonstrate low-loss GaN/AlGaN planar waveguides grown by molecular beam epitaxy on sapphire substrates. By using a proper AlGaN cladding layer and reducing surface roughness we reach <1dB/cm propagation losses at 633nm. These low propagation losses allow an efficient second harmonic generation using modal phase matching between a TM0 pump at 1260nm and a TM2 second harmonic at 630nm. A maximal power conversion of 2% is realized with an efficiency of 0.15%·W -1 cm -2 . We provide a modelling that demonstrates broadband features of GaN/AlGaN platform by showing second harmonic wavelengths tunability from the visible up to the near-infrared spectral region. We discuss drawbacks of modal phase matching and propose a novel solution which allows a drastic improvement of modal overlaps with the help of a planar polarity inversion. This new approach is compatible with low propagation losses and may allow as high as 100%·W -1 cm -2 conversion efficiencies in the future.

Published
2017
Full Text
View/download PDF

34. Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range.

Author

Maine S, Koechlin C, Rennesson S, Jaeck J, Salort S, Chassagne B, Pardo F, Pelouard JL, and Haïdar R

Abstract

We retrieve the complex optical index of single-walled carbon nanotube (CNT) films in the 0.6-800 μm spectral range. Results are obtained from a complete set of optical measurements, reflection and transmission, of free-standing CNT films using time domain spectroscopy in the terahertz (THz) and Fourier transform infrared (IR) spectroscopy in the visible-IR. Based on a Drude-Lorentz model, our results reveal a global metallic behavior of the films in the IR, and confirm their high optical index in the THz range.

Published
2012
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results