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Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in numerical simulations and deterministic nanoprocessing, we produced electrically controlled single quantum dot CBG resonators with excellent electro-optical emission properties. These include multiple wavelength-tunable emission lines and a photon extraction efficiency (PEE) of up to (30.4$\pm$3.4)%, where refined numerical optimization based on experimental findings suggests a substantial improvement, promising PEE >50%. Additionally, the developed quantum light sources yield single-photon purity reaching (98.8$\pm$0.2)% [post-selected: (99.5$\pm$0.3)%] and a photon indistinguishability of (25.8$\pm$2.1)% [post-selected: (92.8$\pm$4.8)%]. Our results pave the way for high-performance quantum devices with combined cavity enhancement and deterministic charge-environment controls, advancing the development of photonic quantum information systems such as complex quantum repeater networks.

Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes.

Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions within the quantum dots, leading to a decrease of the tunnel coupling strength. We achieve a tuning of the coupling strength by $(53.4\pm1.7)$ %. The ability to fine-tune this coupling is essential for quantum network and computing applications that require quantum systems with near identical performance., Comment: Main: 6 pages, 3 figures, Supplemental: 4 pages, 2 figures

Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybridized electron wave function. An off-resonant detection technique based on phonon-mediated state transfer allows for spectrally filtered detection under resonant excitation. Applying a gate voltage to the QDM-device enables a continuous transition between direct and indirect excitons and, thereby, control of the overlap of the electron and hole wave function. This does not only vary the Rabi frequency of the investigated transition by a factor of $\approx3$, but also allows to optimize graph state generation in terms of optical pulse power and reduction of radiative lifetimes., Comment: 6 pages, 3 figures

Tunnel-coupled pairs of optically active quantum dots - quantum dot molecules (QDMs) - offer the possibility to combine excellent optical properties such as strong light-matter coupling with two-spin singlet-triplet ($S-T_0$) qubits having extended coherence times. The $S-T_0$ basis formed using two spins is inherently protected against electric and magnetic field noise. However, since a single gate voltage is typically used to stabilize the charge occupancy of the dots and control the inter-dot orbital couplings, operation of the $S-T_0$ qubits under optimal conditions remains challenging. Here, we present an electric field tunable QDM that can be optically charged with one (1h) or two holes (2h) on demand. We perform a four-phase optical and electric field control sequence that facilitates the sequential preparation of the 2h charge state and subsequently allows flexible control of the inter-dot coupling. Charges are loaded via optical pumping and electron tunnel ionization. We achieve one- and two-hole charging efficiencies of 93.5 $\pm$ 0.8 % and 80.5 $\pm$ 1.3 %, respectively. Combining efficient charge state preparation and precise setting of inter-dot coupling allows control of few-spin qubits, as would be required for on-demand generation of two-dimensional photonic cluster states or quantum transduction between microwaves and photons., Comment: 4 figures

The functionality of phonon-based quantum devices largely depends on the efficiency of interaction of phonons with other excitations. For phonon frequencies above 20 GHz, generation and detection of the phonon quanta can be monitored through photons. The photon-phonon interaction can be enormously strengthened by involving an intermediate resonant quasiparticle, e.g. an exciton, with which a photon forms a polariton. In this work, we discover a giant photoelasticity of exciton-polaritons in a short-period superlattice and exploit it for detecting propagating acoustic phonons. We demonstrate that 42 GHz coherent phonons can be detected with extremely high sensitivity in the time domain Brillouin oscillations by probing with photons in the spectral vicinity of the polariton resonance., Comment: 6 pages, 3 figures, Supplemental Materials

In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a time-dependent shift of the transition energy. This shift is measured accurately by resonant ps laser spectroscopy with photocurrent detection. In our experiments, we sample the laser synchronous output pulse of an ultrafast CMOS circuit with high resolution. With our quantum dot sensor device, we were able to sample transients below 20 ps with a voltage resolution in the mV-range.

Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaged in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low energy ARPES (photon energy $\sim$ 7 eV) to increase its depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples' properties required to perform extremely low energy ARPES experiments on electronic states buried in semiconductor heterostructures.

GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off employing selective etching of Al-containing layers and subsequent transfer to glass substrates. In this article, the selective etching of (111)B-oriented $Al_x Ga_{1-x}As$ sacrificial layers (10 nm to 50 nm thick) with different aluminum concentrations (x=0.5 to 1.0) in 10 % hydrofluoric acid is investigated and compared to standard (100)-oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift-off, the transfer, and the nano-patterning of thin (111)B-oriented GaAs membranes is demonstrated. Atomic force microscopy and high-resolution x-ray diffraction measurements reveal the high structural quality of the transferred GaAs-(111) films.

Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$\pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 \pm 0.5) \cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.

Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and compare our findings with models of lateral parabolic versus hard wall confinement. We find that a gate-defined QPC near pinch-off is compatible with the parabolic saddle point scenario. However, as the number of populated subbands is increased Coulomb screening flattens the potential bottom and a description in terms of a finite hard wall potential becomes more realistic., Comment: 7+2 pager, 7 figures, v2: published version (minor changes)

Cross-correlated noise measurements are performed in etched Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings in equilibrium at bath temperature of $T_\text{bath}=4.2\text{ K}$. The measured white noise exceeds the thermal (Johnson-Nyquist) noise expected from the measured electron temperature $T_\text{e}$ and the electrical resistance $R$. This excess part of the white noise decreases as $T_\text{bath}$ increases and vanishes for $T_\text{bath}\geq 12\text{ K}$. Excess noise is neither observed if one arm of a quantum ring is depleted of electrons nor in 1D-constrictions that have a length and width comparable to the quantum rings. A model is presented that suggests that the excess noise originates from the correlation of noise sources, mediated by phase-coherent propagation of electrons., Comment: 4 pages, 4 figures

We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK., Comment: 5 pages, 3 figures

Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended one-dimensional (1D) electron waveguide network. Hot electrons are produced using a current $I_{\text{h}}$ in a source 2D reservoir, are transmitted through the ballistic 1D waveguide and relax in a drain 2D reservoir. We find that the electron temperature increase ${\Delta}T_{\text{e}}$ in the drain is proportional to the square of the heating current $I_{\text{h}}$, as expected from Joule's law. No temperature increase is observed in the drain when the 1D waveguide does not transmit electrons. Therefore, we conclude that electron-phonon interaction is negligible for heat transport between 2D reservoirs at temperatures below 4.2 K. Furthermore, mode control of the 1D electron waveguide by application of a top-gate voltage reveals that ${\Delta}T_{\text{e}}$ is not proportional to the number of populated subbands $N$, as previously observed in single 1D conductors. This can be explained with the splitting of the heat flow in the 1D waveguide network., Comment: 4 pages, 4 figures

We report on a high resolution x-ray diffraction study unveiling the effect of carriers optically injected into (In,Ga)As quantum dots on the surrounding GaAs crystal matrix. We find a tetragonal lattice expansion with enhanced elongation along the [001] crystal axis that is superimposed on an isotropic lattice extension. The isotropic contribution arises from excitation induced lattice heating as confirmed by temperature dependent reference studies. The tetragonal expansion on the femtometer scale is attributed to polaron formation by carriers trapped in the quantum dots.

The nuclear spins in nanostructured semiconductors play a central role in quantum applications. The nuclear spins represent a useful resource for generating local magnetic fields but nuclear spin noise represents a major source of dephasing for spin qubits. Controlling the nuclear spins enhances the resource while suppressing the noise. NMR techniques are challenging: the group III and V isotopes have large spins with widely different gyromagnetic ratios; in strained material there are large atom-dependent quadrupole shifts; and nanoscale NMR is hard to detect. We report NMR on 100,000 nuclear spins of a quantum dot using chirped radiofrequency pulses. Following polarization, we demonstrate a reversal of the nuclear spin. We can flip the nuclear spin back and forth a hundred times.We demonstrate that chirped NMR is a powerful way of determining the chemical composition, the initial nuclear spin temperatures and quadrupole frequency distributions for all the main isotopes. The key observation is a plateau in the NMR signal as a function of sweep rate: we achieve inversion at the first quantum transition for all isotopes simultaneously. These experiments represent a generic technique for manipulating nanoscale inhomogeneous nuclear spin ensembles and open the way to probe the coherence of such mesoscopic systems., Comment: 8 pages, 4 figures

A semiconductor quantum dot mimics a two-level atom. Performance as a single photon source is limited by decoherence and dephasing of the optical transition. Even with high quality material at low temperature, the optical linewidths are a factor of two larger than the transform-limit. A major contributor to the inhomogeneous linewdith is the nuclear spin noise. We show here that the nuclear spin noise depends on optical excitation, increasing (decreasing) with increasing resonant laser power for the neutral (charged) exciton. Based on this observation, we discover regimes where we demonstrate transform-limited linewidths on both neutral and charged excitons even when the measurement is performed very slowly.

Single quantum dots are solid-state emitters which mimic two-level atoms but with a highly enhanced spontaneous emission rate. A single quantum dot is the basis for a potentially excellent single photon source. One outstanding problem is that there is considerable noise in the emission frequency, making it very difficult to couple the quantum dot to another quantum system. We solve this problem here with a dynamic feedback technique that locks the quantum dot emission frequency to a reference. The incoherent scattering (resonance fluorescence) represents the single photon output whereas the coherent scattering (Rayleigh scattering) is used for the feedback control. The fluctuations in emission frequency are reduced to 20 MHz, just ~ 5% of the quantum dot optical linewidth, even over several hours. By eliminating the 1/f-like noise, the relative fluctuations in resonance fluorescence intensity are reduced to ~ 10E-5 at low frequency. Under these conditions, the antibunching dip in the resonance fluorescence is described extremely well by the two-level atom result. The technique represents a way of removing charge noise from a quantum device., Comment: 14 pages, 4 figures

We present low-temperature transport experiments on Aharonov-Bohm (AB) rings fabricated from two-dimensional hole gases in p-type GaAs/AlGaAs heterostructures. Highly visible h/e (up to 15%) and h/2e oscillations, present for different gate voltages, prove the high quality of the fabricated devices. Like in previous work, a clear beating pattern of the h/e and h/2e oscillations is present in the magnetoresistance, producing split peaks in the Fourier spectrum. The magnetoresistance evolution is presented and discussed as a function of temperature and gate voltage. It is found that sample specific properties have a pronounced influence on the observed behavior. For example, the interference of different transverse modes or the interplay between h/e oscillations and conductance fluctuations can produce the features mentioned above. In previous work they have occasionally been interpreted as signatures of spin-orbit interaction (SOI)-induced effects. In the light of these results, the unambiguous identification of SOI-induced phase effects in AB rings remains still an open and challenging experimental task.

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10^7 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range 920-980 nm and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical design of the microscope is presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Solid-state systems which mimic two-level atoms are being actively developed. Improving the quantum coherence of these systems, for instance spin qubits or single photon emitters using semiconductor quantum dots, involves dealing with noise. The sources of noise are inherent to the semiconductor and are complex. Charge noise results in a fluctuating electric field, spin noise in a fluctuating magnetic field at the location of the qubit, and both can lead to dephasing and decoherence of optical and spin states. We investigate noise in an ultra-pure semiconductor using a minimally-invasive, ultra-sensitive, local probe: resonance fluorescence from a single quantum dot. We distinguish between charge noise and spin noise via a crucial difference in their optical signatures. Noise spectra for both electric and magnetic fields are derived. The noise spectrum of the charge noise can be fully described by the fluctuations in an ensemble of localized charge defects in the semiconductor. We demonstrate the "semiconductor vacuum" for the optical transition at frequencies above 50 kHz: by operating the device at high enough frequencies, we demonstrate transform-limited quantum dot optical linewidths.

Exchange-mediated fine-structure splitting of bright excitons in an ensemble of InAs quantum dots is studied using optical two-dimensional Fourier-transform spectroscopy. By monitoring the non-radiative coherence between the bright states, we find that the fine-structure splitting decreases with increasing exciton emission energy at a rate of 0.1 $\mu$eV/meV. Dephasing rates are compared to population decay rates to reveal that pure dephasing causes the exciton optical coherences to decay faster than the radiative limit at low temperature, independent of excitation density. Fluctuations of the bright state transition energies are nearly perfectly-correlated, protecting the non-radiative coherence from interband dephasing mechanisms.

The intrinsic fluctuations of electron spins in semiconductors and atomic vapors generate a small, randomly-varying "spin noise" that can be detected by sensitive optical methods such as Faraday rotation. Recent studies have demonstrated that the frequency, linewidth, and lineshape of this spin noise directly reveals dynamical spin properties such as dephasing times, relaxation mechanisms and g-factors without perturbing the spins away from equilibrium. Here we demonstrate that spin noise measurements using wavelength-tunable probe light forms the basis of a powerful and novel spectroscopic tool to provide unique information that is fundamentally inaccessible via conventional linear optics. In particular, the wavelength dependence of the detected spin noise power can reveal homogeneous linewidths buried within inhomogeneously-broadened optical spectra, and can resolve overlapping optical transitions belonging to different spin systems. These new possibilities are explored both theoretically and via experiments on spin systems in opposite limits of inhomogeneous broadening (alkali atom vapors and semiconductor quantum dots)., Comment: 4 pages, 4 figures

Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating channels, close to the transition to the one-dimensional (1D) regime, are connected by a quasi-1D quantum interferometer. Under dc current heating of the electrons in one heating channel, we perform cross-correlated noise measurements locally in the directly heated channel and nonlocally in the other channel, which is indirectly heated by hot electron diffusion across the quasi-1D connection. We observe the same functional dependence of the thermal noise on the heating current. The temperature dependence of the electron energy-loss rate is reduced compared to wider 2D systems. In the quantum interferometer, we show the decoherence due to the diffusion of hot electrons from the heating channel into the quasi-1D system, which causes a thermal gradient., Comment: 6 pages, 5 figures

We report on recent progress in the acousto-electrical control of self-assembled quantum dot and quantum post using radio frequency surface acoustic waves (SAWs). We show that the occupancy state of these optically active nanostructures can be controlled via the SAW-induced dissociation of photogenerated excitons and the resulting sequential bipolar carrier injection which strongly favors the formation of neutral excitons for quantum posts in contrast to conventional quantum dots. We demonstrate high fidelity preparation of the neutral biexciton which makes this approach suitable for deterministic entangled photon pair generation. The SAW driven acoustic charge conveyance is found to be highly efficient within the wide quantum well surrounding the quantum posts. Finally we present the direct observation of acoustically triggered carrier injection into remotely positioned, individual quantum posts which is required for a low-jitter SAW-triggered single photon source., Comment: Proceedings of ISCS 2011; to appear in physics status solidi (c)

The spectrally resolved Terahertz photoconductivity between two separately contacted edge-channels of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a not-simply-connected sample geometry which is topologically equivalent to a Corbino disc. Due to the high sensitivity of our novel sample structure, a weak resonance situated on the high energy side of the well known cyclotron resonance is revealed. The magnetic field as well as the carrier density dependence of this weak resonance, in comparison with different models suggests that the additional resonance is an edge induced magneto plasmon, which has so far not been observed in semiconductors., Comment: 6 pages, 7 figures

Injection of mode-filtered electrons into a phase-sensitive four-terminal waveguide Aharonov-Bohm (AB) ring is studied. An individually tuneable quantum point contact (QPC) in a waveguide lead of the GaAs/AlGaAs-ring allows to selectively couple to one-dimensional modes in the ring. Thus, we demonstrate single-mode transport in a multi-mode waveguide structure. Coherent mode-filtering by the lowest QPC subband is verified by non-local bend resistance and phase-sensitive AB interference measurements., Comment: 3 pages, 3 figures

Individual self-assembled Quantum Dots and Quantum Posts are studied under the influence of a surface acoustic wave. In optical experiments we observe an acoustically induced switching of the occupancy of the nanostructures along with an overall increase of the emission intensity. For Quantum Posts, switching occurs continuously from predominantely charged excitons (dissimilar number of electrons and holes) to neutral excitons (same number of electrons and holes) and is independent on whether the surface acoustic wave amplitude is increased or decreased. For quantum dots, switching is non-monotonic and shows a pronounced hysteresis on the amplitude sweep direction. Moreover, emission of positively charged and neutral excitons is observed at high surface acoustic wave amplitudes. These findings are explained by carrier trapping and localization in the thin and disordered two-dimensional wetting layer on top of which Quantum Dots nucleate. This limitation can be overcome for Quantum Posts where acoustically induced charge transport is highly efficient in a wide lateral Matrix-Quantum Well., Comment: 11 pages, 5 figures

Quantum coherent properties of electrons can be studied in Aharonov-Bohm (AB) interferometers. We investigate both experimentally and theoretically the transmission phase evolution in a four-terminal quasi-one-dimensional AlGaAs/GaAs-based waveguide AB ring. As main control parameter besides the magnetic field, we tune the Fermi wave number along the pathways using a top-gate. Our experimental results and theoretical calculations demonstrate the strong influence of the measurement configuration upon the AB-resistance-oscillation phase in a four-terminal device. While the non-local setup displays continuous phase shifts of the AB oscillations, the phase remains rigid in the local voltage-probe setup. Abrupt phase jumps are found in all measurement configurations. We analyze the phase shifts as functions of the magnetic field and the Fermi energy and provide a detailed theoretical model of the device. Scattering and reflections in the arms of the ring are the source of abrupt phase jumps by $\pi$., Comment: 8 pages, 5 figures

Phase sensitivity and thermal dephasing in coherent electron transport in quasi one-dimensional (1D) waveguide rings of an asymmetric four-terminal geometry are studied by magnetotransport measurements. We demonstrate the electrostatic control of the phase in Aharonov-Bohm (AB) resistance oscillations and investigate the impact of the measurement circuitry on decoherence. Phase rigidity is broken due to the ring geometry: Orthogonal waveguide cross-junctions and 1D leads minimize reflections and resonances between leads allowing for a continuous electron transmission phase shift. The measurement circuitry influences dephasing: Thermal averaging dominates in the non-local measurement configuration while additional influence of potential fluctuations becomes relevant in the local configuration., Comment: 7 pages, 4 figures

The nuclear spin fluctuations (NSF) as well as the dynamic nuclear polarization (DNP) and their effects on the electron spins in negatively charged (In,Ga)As/GaAs quantum dots have been studied by polarized pump-probe and photoluminescence spectroscopy techniques. The effective magnetic field of the NSF is about 30 mT at low excitation power. The NSF distribution becomes highly anisotropic at strong optical excitation by circularly polarized light with periodically alternating helicity. This phenomenon is attributed to a decrease of the nuclear spin entropy due to the hyperfine interaction with polarized electron spins. The DNP is limited to small values for intense, but short photoexcitation., Comment: 14 pages, 7 figures

We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of the two spin-split subbands, and a weak anti-localization dip in the magnetoresistance. The spin-orbit induced splitting of the heavy hole subband at the Fermi level is determined to be around 30% of the total Fermi energy. The phase coherence length of holes of around 2.5 $\mu$m at a temperature of 70 mK, extracted from weak anti-localization measurements, is promissing for the fabrication of phase-coherent p-type nanodevices., Comment: 8 pages, 6 figures

We have explored phase coherent transport of holes in two p-type GaAs quantum rings with orbital radii 420 nm and 160 nm fabricated with AFM oxidation lithography. Highly visible Aharonov-Bohm (AB) oscillations are measured in both rings, with an amplitude of the oscillations exceeding 10% of the total resistance in the case of the ring with a radius of 160 nm. Beside the h/e oscillations, we resolve the contributions from higher harmonics of the AB oscillations. The observation of a local resistance minimum at B=0 T in both rings is a signature of the destructive interference of the holes' spins. We show that this minimum is related to the minimum in the h/2e oscillations., Comment: Proceedings of EP2DS-17, Genova 2007; Accepted for Physica E; 3 pages, 3 figures

We have measured highly visible Aharonov-Bohm (AB) oscillations in a ring structure defined by local anodic oxidation on a p-type GaAs heterostructure with strong spin-orbit interactions. Clear beating patterns observed in the raw data can be interpreted in terms of a spin geometric phase. Besides h/e oscillations, we resolve the contributions from the second harmonic of AB oscillations and also find a beating in these h/2e oscillations. A resistance minimum at B=0T, present in all gate configurations, is the signature of destructive interference of the spins propagating along time-reversed paths., Comment: 4 pages, 3 figures, published version

In two-beam magneto-photoluminescence spectra of a two-dimensional valence hole gas we identify the three-level energy spectrum of a free positive trion with a field-induced singlet-triplet transition. The recombination spectrum of acceptor-bound trions is also detected, including a cyclotron replica corresponding to the hole shake-up process. The emergence of a shake-up peak at low temperature is shown to be a sensitive probe of the presence of a small number of impurities inside the high-mobility quantum well, and its relative position is directly related to the hole cyclotron mass., Comment: 4 pages, 5 figures

A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed., Comment: 4 pages, 5 figures

We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information on the quasi-particle wave functions in momentum space for 1 to 6 electrons per dot. For the lowest two energy states, we find a good agreement with Gaussian functions for a harmonic potential. The high energy orbitals exhibit signatures of anisotropic confinement and correlation effects., Comment: 3 pages, 3 figures