Search

Your search keyword '"Ribet-Mohamed, I."' showing total 97 results
Start Over Author "Ribet-Mohamed, I."
97 results on '"Ribet-Mohamed, I."'

1. Quantum transport in weakly coupled superlattices at low temperature

Author

Lhuillier, E., Ribet-Mohamed, I., Nedelcu, A., Berger, V., and Rosencher, E.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We report on the study of the electrical current flowing in weakly coupled superlattice (SL) structures under an applied electric field at very low temperature, i.e. in the tunneling regime. This low temperature transport is characterized by an extremely low tunneling probability between adjacent wells. Experimentally, I(V) curves at low temperature display a striking feature, i.e a plateau or null differential conductance. A theoretical model based on the evaluation of scattering rates is developed in order to understand this behaviour, exploring the different scattering mechanisms in AlGaAs alloys. The dominant interaction in usual experimental conditions such as ours is found to be the electron-ionized donors scattering. The existence of the plateau in the I(V) characteristics is physically explained by a competition between the electric field localization of the Wannier-Stark electron states in the weakly coupled quantum wells and the electric field assisted tunneling between adjacent wells. The influence of the doping concentration and profile as well as the presence of impurities inside the barrier are discussed.

Published
2009
Full Text
View/download PDF

2. Ultimate performance of Quantum Well Infrared Photodetectors in the tunneling regime

Author

Lhuillier, E., Ribet-Mohamed, I., Tauvy, M., Nedelcu, A., Berger, V., and Rosencher, E.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Thanks to their wavelength diversity and to their excellent uniformity, Quantum Well Infrared Photodetectors (QWIP) emerge as potential candidates for astronomical or defense applications in the very long wavelength infrared (VLWIR) spectral domain. However, these applications deal with very low backgrounds and are very stringent on dark current requirements. In this paper, we present the full electro-optical characterization of a 15 micrometer QWIP, with emphasis on the dark current measurements. Data exhibit striking features, such as a plateau regime in the IV curves at low temperature (4 to 25 K). We show that present theories fail to describe this phenomenon and establish the need for a fully microscopic approach.

Published
2009
Full Text
View/download PDF

11. Effect of oblique incidence on the spectral response of quantum well infrared photodetectors

Author

Ribet-Mohamed, I., Costard, E., Bois, P., Guerineau, N., Suffus-Carretero, S., Tauvy, M., and De Rossi, A.

Subjects
Photodetectors -- Optical properties, Photodetectors -- Electric properties, Physics
Abstract

The effect of the oblique incidence of light on the response of cooled infrared photodetectors based on different technologies is studied making use of two complementary setups. The studies reveal that discrepancies are present at higher wavelength and to determine if these discrepancies are due to finite pixel size effect, more complicated model based on a finite element code is used.

Published
2005

14. Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes

Author

Giard E., Taalat R., Delmas M., Rodriguez J.-B., Christol P., and Ribet-Mohamed I.

Subjects
type-ii superlattice, photodiode, midwave infrared, quantum efficiency, noise, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

We present a full characterization of the radiometric performances of a type-II InAs/GaSb superlattice pin photodiode operating in the mid-wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular response measurements: quantum efficiency reaches 23% at λ = 2.1 µm for 1 µm thick structure. Noise under illumination measurements are also reported: noise is limited by the Schottky contribution for reverse bias voltage smaller than 1.2 V. The specific detectivity, estimated for 2π field-of-view and 333 K background temperature, was determined equal to 2.29 × 1010 Jones for -0,8 V bias voltage and 77 K operating temperature.

Published
2014
Full Text
View/download PDF

15. Study of the MTF of a MWIR T2SL focal plane array in IDDCA configuration

Author

Nghiem, J., primary, Jaeck, J., additional, Derelle, S., additional, Primot, J., additional, Caes, M., additional, Bernhardt, S., additional, Huard, E., additional, Haidar, R., additional, Höglund, L., additional, Costard, E., additional, Rodriguez, J.B., additional, Christol, P., additional, and Ribet-Mohamed, I., additional

Published
2019
Full Text
View/download PDF

17. Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors.

Author

Giard, E., Ribet-Mohamed, I., Jaeck, J., Viale, T., Haïdar, R., Taalat, R., Delmas, M., Rodriguez, J.-B., Steveler^3, E., Bardou, N., Boulard, F., and Christol, P.

Subjects
*QUANTUM efficiency, *PHOTODETECTORS, *FOCAL plane arrays sensors, *TRANSFER functions, *SOUND measurement, *INFRARED imaging
Abstract

We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the "InAs-rich" design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100 nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3-4.7 μm window equal to 42% for Ubias=-0.1 V, 77K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications. [ABSTRACT FROM AUTHOR]

Published
2014
Full Text
View/download PDF

18. Radiometric Characterization of Type-II InAs/GaSb Superlattice (T2SL) Midwave Infrared Photodetectors and Focal Plane Arrays

Author

Nghiem, J, Giard, E, Delmas, M., Rodriguez, J.B., CHRISTOL, Philippe, Caes, M., Martijn, H., Costard, E., Ribet-Mohamed, I., ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Electrum 236 (IRnova AB)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, SUPERRESEAU, DETECTEUR INFRAROUGE, CARACTERISATION OPTIQUE
Abstract

International audience; In recent years, Type-II InAs/GaSb superlattice (T2SL) has emerged as a new material technology suitable for high performance infrared (IR) detectors operating from Near InfraRed (NIR, 2-3μm) to Very Long Wavelength InfraRed (LWIR, λ > 15μm) wavelength domains.To compare their performances with well-established IR technologies such as MCT, InSb or QWIP cooled detectors, specific electrical and radiometric characterizations are needed: dark current, spectral response, quantum efficiency, temporal and spatial noises, stability…In this paper, we first present quantum efficiency measurements performed on T2SL MWIR (3-5μm) photodiodes and on one focal plane array (320x256 pixels with 30μm pitch, realized in the scope of a french collaboration ). Different T2SL structures (InAs-rich versus GaSb-rich) with the same cutoff wavelength (λc= 5μm at 80K) were studied. Results are analysed in term of carrier diffusion length in order to define the optimum thickness and type of doping of the absorbing zone.We then focus on the stability over time of a commercial T2SL FPA (320x256 pixels with 30μm pitch), measuring the commonly used residual fixed pattern noise (RFPN) figure of merit. Results are excellent, with a very stable behaviour over more than 3 weeks, and less than 10 flickering pixels, possibly giving access to long-term stability of IR absolute calibration.; Ces dernières années, les détecteurs à super-réseaux de type II InAs/GaSb sont apparus comme une filière émergente permettant d'adresser le domaine spectral infrarouge e,t potentiellement, concurrencer les filières bien établies comme MCT, InSb ou les détecteurs à multipuits quantiques (MPQ). Cette communication rapporte le résultat de caractérisations radiométriques menées sur des photodiodes et sur des matrices de détecteurs, en vue d'applications spatiales.Des mesures de rendement quantique en fonction de la température ont été réalisées et sont analysées en faisant apparaître la notion de longueur de diffusion. Elles permettant d'optimiser la structure super-réseaux. Pour adresser la problématique de la stabilité dans le temps des corrections appliquées aux images infrarouge, une caractérisation spécifique a été menée sur un composants matriciel 320x256 pixels au pas de 30µm.

Published
2016

22. Influence of the InAs/GaSb thickness ratio on the radiometric performances of MWIR InAs/GaSb superlattice pin photodiodes

Author

Giard, E., Delmas, M., Jean-Baptiste Rodriguez, Philippe Christol, Ribet-Mohamed, I., ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2014

23. Dopant-free superlattice MWIR pin photodiode

Author

Philippe Christol, Delmas, M., Jean-Baptiste Rodriguez, Leszek Konczewicz, Giard, E., Ribet-Mohamed, I., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2014

24. Comparison of the electro-optical performance of MWIR InAs/GaSb superlattice pin photodiodes and FPA with asymmetrical designs

Author

Giard, E., Taalat, R., Delmas, M., Jean-Baptiste Rodriguez, Philippe Christol, Ribet-Mohamed, I., ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2014

25. TCAD modeling and characterization of InAs/GaSb superlattice photodiode device for MWIR detection

Author

Delmas, M., Jean-Baptiste Rodriguez, Philippe Christol, Imbert, J., Trinité, V., Jaeck, J., Derelle, S., Giard, E., Ribet-Mohamed, I., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2014

27. Analysis of electrical and phototelectrical characterizations of InAs/GaSbSuperlattice MWIR photodiodes

Author

Taalat, R., Ribet-Mohamed, I., Cervera, C., Rodriguez, J.-B., CHRISTOL, Philippe, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2012

28. An overview of the InAs/GaSb infrared detector technology

Author

Philippe Christol, Taalat, R., Cervera, C., Jean-Baptiste Rodriguez, Ribet-Mohamed, I., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2012

29. Performances actuelles et perspectives des photodétecteurs à super réseaux InAs/GaSb

Author

Cervera, C., Taalat, R., Perez, J.-P., Rodriguez, J.-B., CHRISTOL, Philippe, Ribet-Mohamed, I., Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Palaiseau], and ONERA-Université Paris Saclay (COmUE)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2011

30. Photodétecteur à super réseaux InAs/GaSb pour une nouvelle génération de détecteur infrarouge

Author

Taalat, R., Cervera, C., Perez, J.-P., Rodriguez, J.-B., CHRISTOL, Philippe, Ribet-Mohamed, I., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ONERA - The French Aerospace Lab [Palaiseau], and ONERA-Université Paris Saclay (COmUE)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2011

31. Dark current and noise characterization to evaluate the performance of InAs/GaSb SL photodiodes operating in the mid-wave infrared domain

Author

Cervera, C., Ribet-Mohamed, I., Taalat, R., P Perez, J., Philippe Christol, Jean-Baptiste Rodriguez, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2011

33. Improvement of MWIR SL Photodiode using an asymmetrical period design

Author

Cervera, C., Rodriguez, J.-B., Aït-Kaci, H., Montes, H., CHRISTOL, Philippe, Jaworowicz, K., Ribet-Mohamed, I., Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), and ONERA - The French Aerospace Lab [Palaiseau]

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2010

34. Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation

Author

CHRISTOL, Philippe, Cervera, C., Chaghi, R., Ait-Kaci, H., Rodriguez, J. B., Konczewicz, Leszek, CONTRERAS, Sylvie, Jaworowicz, K., Ribet-Mohamed, I., Aigle, Ges, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Groupe d'étude des semiconducteurs (GES), and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

Subjects
dark current measurements, Infrared Photodiode, MBE, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], PHOTODIODES, InAs/GaSb Superlattice, transport measurements, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], PHOTOVOLTAIC DETECTOR
Abstract

International audience; Electrical properties of non-intentionally doped (nid) InAs/GaSb Superlattice (SL) structures and p-nid-n detectors grown by Molecular Beam Epitaxy on GaSb substrate are reported. The SL structures were made of 600 periods of 8 InAs monolayers (MLs) and 8 GaSb MLs, for a total thickness of 3 mu m. This structure exhibited a cutoff wavelength in the midwave infrared (MWIR) domain, near 4.7 mu m at 80K. Electrical transport measurements, based on resistivity and Hall Effect measurements, were performed on SL structure after removing the conducting GaSb substrate with an appropriate technological process. Carrier concentrations and mobilities carried out as a function of temperature (77-300K) for magnetic fields in the 0-1 Tesla range are analyzed. A change in type of conductivity is observed. The nid SL layers is p-type at liquid Nitrogen temperature while is n-type at room temperature. These results are completed with diode characterizations based on current-voltage (I-V) and capacitance-voltage (C-V) measurements performed on p-nid-n devices with identical InAs/GaSb SL active zone.

Published
2010

35. Laser Spectroscopy for in Situ Diagnostics

Author

Attal-Trétout, B., Grisch, F., Packan, D., Ribet-Mohamed, I., Lefebvre, M.A., ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), and André, Cécile

Subjects
THOMSON, TRACE SPECIES, DIAGNOSTIC, RAMAN, [PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], LASER-INDUCED GRATINGS, RADICALS, NON-LINEAR SPECTROSCOPY, SPECTROSCOPIE LASER, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
Abstract

Laser spectroscopy based on nonlinear processes such as four wave mixing and laser-induced gratings or based on spontaneous Raman and Thomson scattering is widely used, from near IR to near UV, to probe reactive media. The bulk of this monograph is devoted to the application of these techniques to the specific area of plasma, combustion and hypersonic flow field. For each technique a brief description of the signal amplitude is given from which spectral and/or temporal evolution can be predicted as a function of temperature and pressure. Experimentally, the dependence of the signal on parameters such as temperature, pressure, gas composition, or the energy of pump and probe laser pulses have been investigated. Comparison of the experimental results with theoretical predictions allows us to accurately measure these parameters in situ. Therefore, temperature, velocity or number density of important species (major or minor) can be derived from the spectral or temporal content. The synchronization of pulsed laser with particular physical phenomena provides time evolution of the sample over a μs or ms duration, depending on the probed events, thanks to the time resolution (ns) of the lasers. Several examples are given. CARS is applied to a buoyant H2/air flame, a monodisperse droplet stream in combustion and a pulsed plasma in a methane/air flow. In each case, time and space evolution of temperature is recorded. DFWM has proved particularly useful for probing NO, especially when spectral interference is overwhelming the LIF signal; LIF is used otherwise. Laser induced gratings are also valuable tools in some typical cases. Examples are given to illustrate their potential in measuring NO2 molecules in a flame and in measuring the temperature and velocity of a high speed flow. Finally, electron density can be inferred using Thomson scattering and an application in the pulsed plasma is presented., Journal Aerospace Lab, Issue 1, December 2009; ISSN: 2107-6596

Published
2009
Full Text
View/download PDF

36. Van Hove singularities of inter sub-band transitions in infrared detectors at quantum multiwells (MPQ)

Author

Le Rouzo , J., Ribet-Mohamed , I., Haidar , R., Guerineau , N., Tauvy , M., Rosencher , E., Institut des Matériaux, de Microélectronique et des Nanosciences de Provence ( IM2NP ), Aix Marseille Université ( AMU ) -Université de Toulon ( UTLN ) -Centre National de la Recherche Scientifique ( CNRS ), ONERA - The French Aerospace Lab ( Palaiseau ), ONERA, ONERA - The French Aerospace Lab ( Chatillon ), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), ONERA - The French Aerospace Lab [Châtillon], and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2006

37. Angular response of grating-coupled quantum well infrared photodetectors : an experimental study

Author

Le Rouzo, J, Ribet-Mohamed, I, Guerineau, N, Tauvy, M, Schneider, H, Maier, T, Andresen, BF, Fulop, GF, ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), ONERA - The French Aerospace Lab ( Palaiseau ), and ONERA

Subjects
Coupling, Materials science, business.industry, Infrared, Multispectral image, Physics::Optics, Photodetector, Grating, Wavelength, Optics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Absorption (electromagnetic radiation), Quantum well infrared photodetector, ComputingMilieux_MISCELLANEOUS
Abstract

QWIPs are nowadays considered as rather good candidates for multispectral imaging. Indeed, their narrow spectral bandwidth can be tailored by band gap engineering, and they rely on the use of the mature GaAs technology. However, a light coupling scheme, such as 2D-grating for example, is required to obtain normal incidence absorption. The geometrical parameters of this 2D-grating (grating period, etch depth of the grating) need to be optimized. This optimization is particularly difficult for dual-band pixels, since a compromise is required between the two wavelengths. This paper deals with the influence of the etch depth of the grating on the angular response of quantum well infrared photodetectors. We will first present the experimental setup which was specifically developed at ONERA to perform angular response measurements on infrared photodetectors from different technologies. The results obtained on "low-noise" QWIP samples provided by Fraunhofer-IAF will be presented and analyzed, with emphasis on the effect of the etch depth of the grating on the angular response.

Published
2005

Catalog

Books, media, physical & digital resources
See catalog results