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3. Entropy Engineering of 2D Materials.

Author

Mei, Hao, Zhang, Yuxuan, Zhang, Panpan, Ricciardulli, Antonio Gaetano, Samorì, Paolo, and Yang, Sheng

Subjects
QUANTUM entropy, ENTROPY, THERMODYNAMICS, CHALCOGENIDES, ALLOYS
Abstract

Entropy, a measure of disorder or uncertainty in the thermodynamics system, has been widely used to confer desirable functions to alloys and ceramics. The incorporation of three or more principal elements into a single sublattice increases the entropy to medium and high levels, imparting these materials a mélange of advanced mechanical and catalytic properties. In particular, when scaling down the dimensionality of crystals from bulk to the 2D space, the interplay between entropy stabilization and quantum confinement offers enticing opportunities for exploring new fundamental science and applications, since the structural ordering, phase stability, and local electronic states of these distorted 2D materials get significantly reshaped. During the last few years, the large family of high‐entropy 2D materials is rapidly expanding to host MXenes, hydrotalcites, chalcogenides, metal‐organic frameworks (MOFs), and many other uncharted members. Here, the recent advances in this dynamic field are reviewed, elucidating the influence of entropy on the fundamental properties and underlying elementary mechanisms of 2D materials. In particular, their structure‐property relationships resulting from theoretical predictions and experimental findings are discussed. Furthermore, an outlook on the key challenges and opportunities of such an emerging field of 2D materials is also provided. [ABSTRACT FROM AUTHOR]

Published
2024
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4. An open-access database and analysis tool for perovskite solar cells based on the FAIR data principles

Author

Jacobsson, T. Jesper, Hultqvist, Adam, García-Fernández, Alberto, Anand, Aman, Al-Ashouri, Amran, Hagfeldt, Anders, Crovetto, Andrea, Abate, Antonio, Ricciardulli, Antonio Gaetano, Vijayan, Anuja, Kulkarni, Ashish, Anderson, Assaf Y., Darwich, Barbara Primera, Yang, Bowen, Coles, Brendan L., Perini, Carlo A. R., Rehermann, Carolin, Ramirez, Daniel, Fairen-Jimenez, David, Di Girolamo, Diego, Jia, Donglin, Avila, Elena, Juarez-Perez, Emilio J., Baumann, Fanny, Mathies, Florian, González, G. S. Anaya, Boschloo, Gerrit, Nasti, Giuseppe, Paramasivam, Gopinath, Martínez-Denegri, Guillermo, Näsström, Hampus, Michaels, Hannes, Köbler, Hans, Wu, Hua, Benesperi, Iacopo, Dar, M. Ibrahim, Bayrak Pehlivan, Ilknur, Gould, Isaac E., Vagott, Jacob N., Dagar, Janardan, Kettle, Jeff, Yang, Jie, Li, Jinzhao, Smith, Joel A., Pascual, Jorge, Jerónimo-Rendón, Jose J., Montoya, Juan Felipe, Correa-Baena, Juan-Pablo, Qiu, Junming, Wang, Junxin, Sveinbjörnsson, Kári, Hirselandt, Katrin, Dey, Krishanu, Frohna, Kyle, Mathies, Lena, Castriotta, Luigi A., Aldamasy, Mahmoud. H., Vasquez-Montoya, Manuel, Ruiz-Preciado, Marco A., Flatken, Marion A., Khenkin, Mark V., Grischek, Max, Kedia, Mayank, Saliba, Michael, Anaya, Miguel, Veldhoen, Misha, Arora, Neha, Shargaieva, Oleksandra, Maus, Oliver, Game, Onkar S., Yudilevich, Ori, Fassl, Paul, Zhou, Qisen, Betancur, Rafael, Munir, Rahim, Patidar, Rahul, Stranks, Samuel D., Alam, Shahidul, Kar, Shaoni, Unold, Thomas, Abzieher, Tobias, Edvinsson, Tomas, David, Tudur Wyn, Paetzold, Ulrich W., Zia, Waqas, Fu, Weifei, Zuo, Weiwei, Schröder, Vincent R. F., Tress, Wolfgang, Zhang, Xiaoliang, Chiang, Yu-Hsien, Iqbal, Zafar, Xie, Zhiqiang, and Unger, Eva

Published
2022
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11. Two-Dimensional Violet Phosphorus: A p-Type Semiconductor for (Opto)electronics

Author

Ricciardulli, Antonio Gaetano, Wang, Ye, Yang, Sheng, Samorì, Paolo, Institut de Science et d'ingénierie supramoléculaires (ISIS), Université de Strasbourg (UNISTRA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Technische Universität Dresden = Dresden University of Technology (TU Dresden), ANR-10-LABX-0026,CSC,Center of Chemistry of Complex System(2010), ANR-10-IDEX-0002,UNISTRA,Par-delà les frontières, l'Université de Strasbourg(2010), European Project: 833707,SUPRA2DMAT, and European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020)

Subjects
Colloid and Surface Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, Biochemistry, Catalysis
Abstract

International audience; The synthesis of novel two-dimensional (2D) materials displaying an unprecedented composition and structure via the exfoliation of layered systems provides access to uncharted properties. For application in optoelectronics, a vast majority of exfoliated 2D semiconductors possess n-type or more seldom ambipolar characteristics. The shortage of p-type 2D semiconductors enormously hinders the extensive engineering of 2D devices for complementary metal oxide semiconductors (CMOSs) and beyond CMOS applications. However, despite the recent progress in the development of 2D materials endowed with p-type behaviors by direct synthesis or p-doping strategies, finding new structures is still of primary importance. Here, we report the sonication-assisted liquid-phase exfoliation of violet phosphorus (VP) crystals into few-layer-thick flakes and the first exploration of their electrical and optical properties. Field-effect transistors based on exfoliated VP thin films exhibit a p-type transport feature with an Ion/Ioff ratio of 10^4 and a hole mobility of 2.25 cm2 V–1 s–1 at room temperature. In addition, the VP film-based photodetectors display a photoresponsivity (R) of 10 mA W–1 and a response time down to 0.16 s. Finally, VP embedded into CMOS inverter arrays displays a voltage gain of ∼17. This scalable production method and high quality of the exfoliated material combined with the excellent optoelectronic performances make VP an enticing and versatile p-type candidate for next-generation more-than-Moore (opto)electronics.

Published
2022
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13. An open-access database and analysis tool for perovskite solar cells based on the FAIR data principles

Author

Jacobsson, T. Jesper, primary, Hultqvist, Adam, additional, García-Fernández, Alberto, additional, Anand, Aman, additional, Al-Ashouri, Amran, additional, Hagfeldt, Anders, additional, Crovetto, Andrea, additional, Abate, Antonio, additional, Ricciardulli, Antonio Gaetano, additional, Vijayan, Anuja, additional, Kulkarni, Ashish, additional, Anderson, Assaf Y., additional, Darwich, Barbara Primera, additional, Yang, Bowen, additional, Coles, Brendan L., additional, Perini, Carlo A. R., additional, Rehermann, Carolin, additional, Ramirez, Daniel, additional, Fairen-Jimenez, David, additional, Di Girolamo, Diego, additional, Jia, Donglin, additional, Avila, Elena, additional, Juarez-Perez, Emilio J., additional, Baumann, Fanny, additional, Mathies, Florian, additional, González, G. S. Anaya, additional, Boschloo, Gerrit, additional, Nasti, Giuseppe, additional, Paramasivam, Gopinath, additional, Martínez-Denegri, Guillermo, additional, Näsström, Hampus, additional, Michaels, Hannes, additional, Köbler, Hans, additional, Wu, Hua, additional, Benesperi, Iacopo, additional, Dar, M. Ibrahim, additional, Bayrak Pehlivan, Ilknur, additional, Gould, Isaac E., additional, Vagott, Jacob N., additional, Dagar, Janardan, additional, Kettle, Jeff, additional, Yang, Jie, additional, Li, Jinzhao, additional, Smith, Joel A., additional, Pascual, Jorge, additional, Jerónimo-Rendón, Jose J., additional, Montoya, Juan Felipe, additional, Correa-Baena, Juan-Pablo, additional, Qiu, Junming, additional, Wang, Junxin, additional, Sveinbjörnsson, Kári, additional, Hirselandt, Katrin, additional, Dey, Krishanu, additional, Frohna, Kyle, additional, Mathies, Lena, additional, Castriotta, Luigi A., additional, Aldamasy, Mahmoud. H., additional, Vasquez-Montoya, Manuel, additional, Ruiz-Preciado, Marco A., additional, Flatken, Marion A., additional, Khenkin, Mark V., additional, Grischek, Max, additional, Kedia, Mayank, additional, Saliba, Michael, additional, Anaya, Miguel, additional, Veldhoen, Misha, additional, Arora, Neha, additional, Shargaieva, Oleksandra, additional, Maus, Oliver, additional, Game, Onkar S., additional, Yudilevich, Ori, additional, Fassl, Paul, additional, Zhou, Qisen, additional, Betancur, Rafael, additional, Munir, Rahim, additional, Patidar, Rahul, additional, Stranks, Samuel D., additional, Alam, Shahidul, additional, Kar, Shaoni, additional, Unold, Thomas, additional, Abzieher, Tobias, additional, Edvinsson, Tomas, additional, David, Tudur Wyn, additional, Paetzold, Ulrich W., additional, Zia, Waqas, additional, Fu, Weifei, additional, Zuo, Weiwei, additional, Schröder, Vincent R. F., additional, Tress, Wolfgang, additional, Zhang, Xiaoliang, additional, Chiang, Yu-Hsien, additional, Iqbal, Zafar, additional, Xie, Zhiqiang, additional, and Unger, Eva, additional

Published
2021
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15. Embedded Nickel‐Mesh Transparent Electrodes for Highly Efficient and Mechanically Stable Flexible Perovskite Photovoltaics: Toward a Portable Mobile Energy Source

Author

Li, Meng, primary, Zuo, Wei‐Wei, additional, Ricciardulli, Antonio Gaetano, additional, Yang, Ying‐Guo, additional, Liu, Yan‐Hua, additional, Wang, Qiong, additional, Wang, Kai‐Li, additional, Li, Gui‐Xiang, additional, Saliba, Michael, additional, Di Girolamo, Diego, additional, Abate, Antonio, additional, and Wang, Zhao‐Kui, additional

Published
2020
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26. Topochemical Synthesis of Two‐Dimensional Transition‐Metal Phosphides Using Phosphorene Templates.

Author

Yang, Sheng, Chen, Guangbo, Ricciardulli, Antonio Gaetano, Zhang, Panpan, Zhang, Zhen, Shi, Huanhuan, Ma, Ji, Zhang, Jian, Blom, Paul W. M., and Feng, Xinliang

Subjects
PHOSPHORENE, PHOSPHIDES, NARROW gap semiconductors, HOLE mobility, P-type semiconductors, OXYGEN evolution reactions, TRANSITION metals, HYDROGEN evolution reactions
Abstract

Transition‐metal phosphides (TMPs) have emerged as a fascinating class of narrow‐gap semiconductors and electrocatalysts. However, they are intrinsic nonlayered materials that cannot be delaminated into two‐dimensional (2D) sheets. Here, we demonstrate a general bottom‐up topochemical strategy to synthesize a series of 2D TMPs (e.g. Co2P, Ni12P5, and CoxFe2−xP) by using phosphorene sheets as the phosphorus precursors and 2D templates. Notably, 2D Co2P is a p‐type semiconductor, with a hole mobility of 20.8 cm2 V−1 s−1 at 300 K in field‐effect transistors. It also behaves as a promising electrocatalyst for the oxygen evolution reaction (OER), thanks to the charge‐transport modulation and improved surface exposure. In particular, iron‐doped Co2P (i.e. Co1.5Fe0.5P) delivers a low overpotential of only 278 mV at a current density of 10 mA cm−2 that outperforms the commercial Ir/C benchmark (304 mV). [ABSTRACT FROM AUTHOR]

Published
2020
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28. Improved Hole Injection into Perovskite Light‐Emitting Diodes Using A Black Phosphorus Interlayer.

Author

Ricciardulli, Antonio Gaetano, Kotadiya, Naresh B., Wetzelaer, Gert‐Jan A. H., Blom, Paul W. M., Yang, Sheng, and Feng, Xinliang

Subjects
LIGHT emitting diodes, PEROVSKITE, PHOSPHORUS, HOLES (Electron deficiencies), POLYSTYRENE, CHEMICAL peel
Abstract

The light‐output and efficiency of perovskite based light‐emitting diodes (PeLEDs) is limited by hole injection and high leakage current, generated by a high hole injection barrier and poor perovskite morphology, respectively. Here, a feasible strategy is reported to overcome both constraints by introducing 2D black phosphorus (BP) as hole injection layer in the PeLED stack. A continuous film composed of high‐quality, ultrathin, and large BP sheets on top of poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate simultaneously improves the hole injection and morphology of the green‐emitting inorganic CsPbBr3 perovskite. Inclusion of the BP enhances the external quantum efficiency of CsPbBr3 based PeLEDs from 0.7% to 2.8%. A strategy for enhancing hole injection current in perovskite light‐emitting diodes (PeLEDs) is demonstrated. By introducing a smooth and continuous 2D black phosphorus film as hole injection layer in a CsPbBr3‐based PeLED, the hole injection barrier and the CsPbBr3 film morphology are reduced and improved, respectively. As result, external quantum efficiency and light output are considerably enhanced. [ABSTRACT FROM AUTHOR]

Published
2019
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