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Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300~mm foundry process. With this platform, we achieve single photon emission via resonance fluorescence and scalable emission wavelength tunability through an electrically controlled non-volatile memory. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries., Comment: 9 pages, 4 figures

Measuring the internal quality factor of coplanar waveguide superconducting resonators is an established method of determining small losses in superconducting devices. Traditionally, the resonator losses are only attributed to two-level system (TLS) defects using a power dependent model for the quality factor. However, excess non-equilibrium quasiparticles can also limit the quality factor of the planar superconducting resonators used in circuit quantum electrodynamics. At millikelvin temperatures, quasiparticles can be generated by breaking Cooper pairs via a single high-energy or multiple sub-gap photons. Here a two-temperature, power and temperature dependent model is proposed to evaluate resonator losses for isolating TLS and quasiparticle loss simultaneously. The model combines the conventional TLS power and temperature dependence with an effective temperature non-equilibrium quasiparticle description of the superconducting loss. The quasiparticle description is based on the quasiparticle number density calculated using rate equations for an external quasiparticle generation source, recombination, and trapping. The number density is translated to an effective temperature using a thermal distribution that may be different from the bath. Experimental measurements of high-quality factor resonators fabricated from single crystal aluminum and titanium nitride thin films on silicon are interpreted with the presented model. This approach enables identification of quasiparticle and TLS loss, resulting in the determination that the TiN resonator has comparable TLS and quasiparticle loss at low power and low-temperature, while the low-temperature Al resonator behavior is dominated by non-equilibrium quasiparticle loss.

Incorporating solid-state quantum emitters into optical fiber networks enables the long-distance transmission of quantum information and the remote connection of distributed quantum nodes. However, interfacing quantum emitters with fiber optics encounters several challenges, including low coupling efficiency and stability. Here, we demonstrate a highly efficient fiber-interfacing photonic device that directly launches single photons from quantum dots into a standard FC/PC-connectorized single-mode fiber (SMF28). Optimally designed photonic structures based on hole gratings produce an ultra-narrow directional beam that matches the small numerical aperture of a single-mode fiber. A pick-and-place technique selectively integrates a single miniaturized device into the core of the fiber. Our approach realizes a plug-and-play single-photon device that does not require any optical alignment and thus guarantees long-term stability. The results thus represent a major step toward practical and reliable quantum lights across a fiber network., Comment: 19 pages, 10 figures including supporting information

Interest in building dedicated Quantum Information Science and Engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. This manuscript not only addresses policy makers and funding agencies (both public and private and from the regional to the international level) but also contains needs identified by industry leaders and discusses the difficulties inherent in creating an inclusive QISE curriculum. We report on the status of eighteen post-secondary education programs in QISE and provide guidance for building new programs. Lastly, we encourage the development of a comprehensive strategic plan for quantum education and workforce development as a means to make the most of the ongoing substantial investments being made in QISE., Comment: 18 pages, 2 figures, 1 table

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique and long-range quantum interaction. Here, we demonstrate quantum interactions between distant two quantum dots on a nanophotonic waveguide. We achieve a photon-mediated long-range interaction by integrating the quantum dots to the same optical mode of a nanophotonic waveguide and overcome spectral mismatch by incorporating on-chip thermal tuners. We observe their quantum interactions of the form of super-radiant emission, where the two dots collectively emit faster than each dot individually. Creating super-radiant emission from integrated quantum emitters could enable compact chip-integrated photonic structures that exhibit long-range quantum interactions. Therefore, these results represent a major step towards establishing photonic quantum information processors composed of multiple interacting quantum emitters on a semiconductor chip., Comment: 23 pages, 7 figures

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons., Comment: 19 Pages in total, including 8 figures

Interactions between solid-state quantum emitters and cavities are important for a broad range of applications in quantum communication, linear optical quantum computing, nonlinear photonics, and photonic quantum simulation. These applications often require combining many devices on a single chip with identical emission wavelengths in order to generate two-photon interference, the primary mechanism for achieving effective photon-photon interactions. Such integration remains extremely challenging due to inhomogeneous broadening and fabrication errors that randomize the resonant frequencies of both the emitters and cavities. In this letter we demonstrate two-photon interference from independent cavity-coupled emitters on the same chip, providing a potential solution to this long-standing problem. We overcome spectral mismatch between different cavities due to fabrication errors by depositing and locally evaporating a thin layer of condensed nitrogen. We integrate optical heaters to tune individual dots within each cavity to the same resonance with better than 3 {\mu}eV of precision. Combining these tuning methods, we demonstrate two-photon interference between two devices spaced by less than 15 {\mu}m on the same chip with a post-selected visibility of 33%. These results pave the way to integrate multiple quantum light sources on the same chip to develop quantum photonic devices., Comment: 18 Pages in total, including 5 figures

Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. In many applications these photons must also be indistinguishable such that they exhibit interference on a beamsplitter, which implements effective photon-photon interactions. However, deterministic generation of indistinguishable single photons with high brightness remains a challenging problem. We demonstrate two-photon interference at telecom wavelengths using an InAs/InP quantum dot in a nanophotonic cavity. The cavity enhances the quantum dot emission, resulting in a nearly Gaussian transverse mode profile with high out-coupling efficiency exceeding 36% after multi-photon correction. We also observe Purcell enhanced spontaneous emission rate up to 4. Using this source, we generate linearly polarized, high purity single photons at 1.3 micron wavelength and demonstrate the indistinguishable nature of the emission using a two-photon interference measurement, which exhibits indistinguishable visibilities of 18% without post-selection and 67% with post-selection. Our results provide a promising approach to generate bright, deterministic single photons at telecom wavelength for applications in quantum networking and quantum communication., Comment: 29 Pages in total, including 11 figures