253 results on '"Rideau D"'
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2. Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
3. Remote Surface Roughness Scattering in FDSOI devices with high-$\kappa$/SiO$_2$ gate stacks
4. Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys
5. Simulation in action: the application of modelling to SPAD architecture design
6. Strained Si, Ge and SiGe alloys modeling with full-zone k.p method optimized from first principle calculation
7. X-Ray Scattering Evidence for Macroscopic Strong Pinning Centers in the Sliding CDW state of NbSe_3
8. Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs
9. Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements
10. Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology
11. Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods
12. A self-sustaining Single Photon Avalanche Diode Model
13. Understanding Ge impact on VT and VFB in Si1−xGex/Si pMOSFETs
14. Unexpected impact of germanium content in SiGe bulk PMOSFETs
15. Microscopic scale characterization and modeling of transistor degradation under HC stress
16. Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects
17. SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time
18. MTOR dependent-induction of lung cell senescence leads to lung fibrosis or emphysema
19. Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys
20. On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs
21. Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility
22. Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study
23. Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability
24. Modeling the independent double gate transistor in accumulation regime for 1TDRAM application
25. Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes
26. Implant heating contribution to amorphous layer formation: a KMC approach
27. DC and AC MOS transistor modelling in presence of high gate leakage and experimental validation
28. Advances in 3D CMOS image sensors optical modeling: combining realistic morphologies with FDTD
29. High resolution X-ray scattering techniques for studying the sliding CDWS distortions, in NbSe 3
30. Phase slippage at the interface: normal metal/sliding charge-density wave
31. Integration of SPAD in 28nm FDSOI CMOS technology
32. Impact of strain on access resistance in planar and nanowire CMOS devices
33. Full-zone k · p parametrization for III-As materials
34. Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance
35. Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology
36. A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
37. Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs
38. Hot carrier stress: Aging modeling and analysis of defect location
39. Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs
40. [Invited] Strain effects on carrier mobility in Si and Ge nanowires
41. Hot Carrier Degradation: From Defect Creation Modeling to Their Impact on NMOS Parameters
42. Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires
43. Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes
44. Robust EOT and effective work function extraction for 14 nm node FDSOI technology
45. Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution
46. Full-zone k · p parametrization for III-As materials
47. TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment
48. Senescence of pulmonary vascular cells is related to overactivation of the mTOR signaling pathway in chronic obstructive pulmonary disease (COPD)
49. New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology
50. Selective TSC1 deletion in smooth muscle results in mTOR signaling activation and development of pulmonary hypertension that can be reversed by rapamycin
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