159 results on '"Robinson, G. Y."'
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2. TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices
3. Economics of Cryogenic Systems for Superconducting Magnets
4. Design and Test of a Gas-Adsorption System for the N. S. Savannah
5. Design and Performance Data on a Laboratory Size Liquid Nitrogen Plant
6. Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy.
7. A study of Schottky contacts on indium phosphide.
8. Composite oxide films formed by dc plasma anodization of Al/GaAs.
9. Time-Resolved Scanning Electron Microscopy and Its Application to Bulk-Effect Oscillators.
10. A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice.
11. Electron traps in InGaP grown by gas source molecular beam epitaxy.
12. Wannier–Stark localization in a strained-layer InxGa1-xAs/InyGa1-yP superlattice.
13. Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers
14. Multiple-Quantum-Well Optical Modulators in Strain-Balanced In1−xGaxAs/InL1−yGayP on InP for Smart-Pixel Application
15. A Study of Metal-Semiconductor Contacts on Indium Phosphide.
16. Electron Ballistic Effects in III-V Semiconductors.
17. A Study of Metal-Semiconductor Contacts on Indium Phosphide.
18. Low-resistance visible wavelength distributed Bragg reflectors using small energy band offset heterojunctions
19. Electrical characterization of etched grain-boundary properties from as-processed px-CdTe-based solar cells
20. Impedance independent optical carrier lifetime measurements in semiconductor lasers
21. Database filter: optoelectronic design and implementation
22. Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells
23. Identification of the L-Band in InxGa1−xP/In)0.5Al0.5P Multiple Quantum Wells from High Pressure Measurement
24. L-band recombination inInxGa1−xP/In0.5Al0.5P multiple quantum wells
25. Wannier–Stark localization in a strained‐layer InxGa1−xAs/InyGa1−yP superlattice
26. Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy
27. Optical transitions in strained In1−xGaxAsyP1−y quantum wells clad by lattice‐matched barriers of InGaAsP
28. Band offsets in InGaP/InAlP multiple quantum wells using high pressure
29. Direct determination of the band discontinuities inInxGa1−xP/InyAl1−yP multiple quantum wells
30. Nonresonant tunneling in InGaP/InAlP asymmetric double quantum wells
31. Optoelectronic Logic Arrays Using the Light Amplifying Optical Switch (LAOS)
32. Two wavelength optically controlled latch and AND gate
33. Measurement of Schottky barrier energy on InGaP and InGaAlP films lattice matched to GaAs
34. Gas-source molecular-beam epitaxy growth of InxGa1−x−yAlyP
35. Gas-source molecular-beam epitaxial growth of InGaAsP for 1.3 μm distributed Bragg reflectors
36. The influence of dislocation density on electron mobility in InP films on Si
37. Spontaneous change of growth orientation of In0.5Ga0.5P/GaAs superlattices in molecular beam epitaxy
38. Picosecond absorption dynamics of photoexcited InGaP epitaxial films
39. Ultrafast graded double‐heterostructure GaInAs/InP photodiode
40. Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure
41. Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes
42. Gated Optical Latch Based on InGaAs/InP Light Amplifying Optical Switch
43. Ultrafast Graded Double Heterostructure p-i-n Photodiode
44. Reflection high-energy electron diffraction patterns of CrSi2 films on (111) silicon
45. Insulated‐gate multiple quantum well optical modulator on InP
46. A review of the geometrical fundamentals of reflection high-energy electron diffraction with application to silicon surfaces
47. Epitaxial films of semiconducting FeSi2 on (001) silicon
48. Spontaneous Change of Growth Orientation of InGaP/GaAs Superlattices in MBE
49. Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures.
50. Molecular beam epitaxy growth of InGaP multiple quantum well structures on GaP for optical modulators.
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