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A series of zinc(II) thioamidate complexes [Zn{SC(iPr)NR}2]n for R = iPr (n = 2) (2), tBu (3) (n = 1), Ph (4) (n = 2) and Cy (5) (n = 2) and one cadmium(II) thioamidate complex [Cd{SC(iPr)NtBu}2]3, (6), were designed and synthesised as single-source precursors for AACVD ZnS and CdS. Solid-state structures of all four zinc(II) compounds revealed distorted tetrahedral or trigonal bipyramidal geometries, with varying tendencies for dimeric association, mediated by {Zn–S} bridging bonds. The thermogravimetric analysis identified the {tBu} derivertive, 3, as the most promising precursor based on its low decomposition onset (118 °C) and clean conversion to ZnS. This was attributed to the greater availability of β-hydrogen atoms promoting the pyrolysis mechanism. The corresponding cadmium thioamide 6 was found to crystallise as a trimetallic molecule which lacked the thermal stability to be considered viable for AACVD. Hence, 3 was used to deposit ZnS thin films by AACVD at 200–300 °C. Powder X-ray diffraction confirmed phase-pure growth of hexagonal wurtzite ZnS, with approximate crystallite sizes of 15–20 nm. Scanning electron microscopy revealed densely packed spherical nanoclusters. The morphology and crystallinity were most consistent for depositions between 250–300 °C. Energy dispersive X-ray spectroscopy indicated slightly sulfur-deficient stoichiometries. [ABSTRACT FROM AUTHOR]

Area‐selective deposition (ASD) is a bottom‐up technique that provides numerous opportunities for nanoelectronic device fabrication. For example, advanced nano‐interconnect structures with barrierless metals like Ru in the contact holes can be created by Ru ASD with the bottom metals as growth surfaces and dielectrics as non‐growth surfaces. This work investigates Ru ASD by chemical vapor deposition (CVD) on industrially relevant substrates and nanopatterns and reveals how selectivity and growth rate are modulated by the CVD conditions and type of nanopattern. For low‐k dielectric/Cu substrate combinations, the selectivity reverses from metal‐on‐metal to metal‐on‐dielectric upon only changing the CVD co‐reagent from H2 to NH3. In contrast, NH3 is the preferred co‐reagent for SiO2‐TiN line patterns with critical dimension (CD) of 40 nm due to the more favorable adsorption and diffusion kinetics that cause growth rate and selectivity enhancement. Consistent with a diffusion‐mediated mechanism, the growth rate enhances even more for Ru CVD on nanoscale contact holes with CD of 10.5 nm, becoming 2.4 times higher as compared to unpatterned substrates. Thus, the ASD process changes drastically when pattern dimensions reach the nanoscale. The reported insights facilitate rational design of metal ASD processes for multiple applications in nanofabrication. [ABSTRACT FROM AUTHOR]