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27 results on '"Roche, N. J.-H."'

1. Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

Author

Buchner, S, McMorrow, D, Sibley, M, Eaton, P, Mavis, D, Dusseau, L, Roche, N. J-H, and Bernard, M

Subjects
Electronics And Electrical Engineering
Abstract

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

Published
2009

5. Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection

Author

Khachatrian, A., primary, Roche, N. J-H, additional, Buchner, S., additional, Koehler, A. D., additional, Anderson, T. J., additional, Hobart, K. D., additional, McMorrow, D., additional, LaLumondiere, S. D., additional, Wells, N. P., additional, Tockstein, M. A., additional, Dillingham, E. C., additional, Bonsall, J. P., additional, Karuza, P., additional, Lotshaw, W. T., additional, Moss, S. C., additional, Brewe, D. L., additional, Ferlet-Cavrois, V., additional, and Mushitiello, M., additional

Published
2017
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6. Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs

Author

Khachatrian, A., primary, Roche, N. J.-H., additional, Buchner, S. P., additional, Koehler, A. D., additional, Anderson, T. J., additional, Hobart, K. D., additional, McMorrow, D., additional, LaLumondiere, S. D., additional, Wells, N. P., additional, Bonsall, J., additional, Dillingham, E. C., additional, Karuza, P., additional, Brewe, D. L., additional, Lotshaw, W. T., additional, Moss, S. C., additional, Ferlet-Cavrois, V., additional, and Muschitiello, M., additional

Published
2017
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7. Impact of Neutron-Induced Displacement Damage on the ATREE Response in LM124 Operational Amplifier

Author

Roig, Fabien, Dusseau, L., Ribeiro, P., Auriel, G., Roche, N. J-H., Privat, A., Vaillé, J.-R., Boch, J., Saigné, F., Marec, R., Calvel, P., Bezerra, F., Ecoffet, R., Azais, B., Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), GRAMAT (DAM/GRAMAT), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Thales Alenia Space [Toulouse] (TAS), THALES [France], Centre National d'Études Spatiales [Toulouse] (CNES), Direction générale de l'armement [Bagneux] (DGA), Thales Alenia Space (TAS), THALES, Thales Alenia Space - TAS (Toulouse, France), Thales (France), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), and Université de Montpellier (UM)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2014
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8. Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses with Sub-Micrometer Spot Sizes

Author

Mcmorrow, D., Khachatrian, A., Warner, J. H., Buchner, S. P., Kanyogoro, N., Melinger, J. S., Roche, N. J.-H., Pouget, V., Larue, C., Naval Research Laboratory (NRL), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and PULSCAN

Subjects
[SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; Ultraviolet optical pulses with a full-width-at-half-maximum diameter focused spot size of 0.32 μm are generated, characterized, and used to produce SEUs in a 90 nm CMOS/SOI SRAM. The results provide unequivocal experimental evidence for cell-to-cell variations in SEU sensitivity that can be identified with process variations at the individual transistor level.

Published
2013

9. A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$HEMTs using Two-Photon Absorption and Heavy Ions

Author

Khachatrian, A., primary, Roche, N. J.-H., additional, Buchner, S., additional, Koehler, A. D., additional, Anderson, T. J., additional, Ferlet-Cavrois, V., additional, Muschitiello, M., additional, McMorrow, D., additional, Weaver, B., additional, and Hobart, K. D., additional

Published
2015
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12. Robusta the firstborn French modular Cubesat

Author

Deneau, C., Roche, N. J.-H., Perez, S., Badsi, R., Doridant, A., Boch, J., Vaillé, J.-R., Jarrix, Sylvie, Saleman, M., Dusseau, L., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2010

13. ROBUSTA, a Student Satellite to Serve the Radiation Effects Community

Author

Perez, S., Jarrix, Sylvie, Roche, N. J-H., Boch, J., Vaillé, J.-R., Pénarier, A., Dusseau, L., Saleman, M., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

Robusta is the first French university cubesat designed with the support of CNES. The aim of the payload experiment is to measure the radiation induced degradation of electronic devices. Flight data will be compared to the results of a novel prediction method taking into account the Enhanced Low Dose Rate Sensitivity. The second interesting point of this project is that it's a real educational project. The organization and derived implications are presented. This paper should highlight the interest of a cubesat-type satellite from the scientific and educational point of view

Published
2009

14. Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in \text Alx {\text {Ga}}1-x N/GaN HEMTs.

Author

Khachatrian, A., Roche, N. J.-H., Ruppalt, L. B., Champlain, J. G., Buchner, S., Koehler, A. D., Anderson, T. J., Hobart, K. D., Warner, J. H., and Mcmorrow, D.

Subjects
*THERMAL stresses, *ELECTRONIC band structure, *PLASMA gases, *SPECTRUM analysis, *ION beams
Abstract

Spatial variations of single-event transient (SET) sensitivity in Al0.25Ga0.75N/GaN HEMTs are revealed using focused, pulsed UV laser light. SETs in regions of enhanced sensitivity have larger amplitudes and are termed “hot spots.” They are the same regions where large temperature changes are observed with thermoreflectance thermography. Both effects are attributed to the presence of material defects: SETs with enhanced amplitudes have reduced decay times due to thermally assisted detrapping; increased temperature is due to carrier scattering by the same defects. [ABSTRACT FROM PUBLISHER]

Published
2018
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15. The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier

Author

Roig, Fabien, primary, Dusseau, L., additional, Ribeiro, P., additional, Auriel, G., additional, Roche, N. J.-H., additional, Privat, A., additional, Vaille, J.-R., additional, Boch, J., additional, Saigne, F., additional, Marec, R., additional, Calvel, P., additional, Bezerra, F., additional, Ecoffet, R., additional, and Azais, B., additional

Published
2014
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16. Validation of the Variable Depth Bragg Peak Method for Single-Event Latchup Testing Using Ion Beam Characterization

Author

Roche, N. J-H., primary, Buchner, S. P., additional, Foster, C. C., additional, King, M. P., additional, Dodds, N. A., additional, Warner, J. H., additional, McMorrow, D., additional, Decker, T., additional, OaNeill, P. M., additional, Reddell, B. D., additional, Nguyen, K. V., additional, Samsel, I. K., additional, Hooten, N. C., additional, Bennett, W. G., additional, and Reed, R. A., additional

Published
2014
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17. Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Author

Gaillardin, M., primary, Raine, M., additional, Duhamel, O., additional, Girard, S., additional, Paillet, P., additional, McMorrow, D., additional, Warner, J. H., additional, Andrieu, F., additional, Barraud, S., additional, Faynot, O., additional, and Roche, N. J.-H., additional

Published
2014
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19. Modeling and Investigations on TID-ASETs Synergistic Effect in LM124 Operational Amplifier From Three Different Manufacturers

Author

Roig, Fabien, primary, Dusseau, L., additional, Khachatrian, A., additional, Roche, N. J-H., additional, Privat, A., additional, Vaille, J.-R., additional, Boch, J., additional, Warner, J. H., additional, Saigne, F., additional, Buchner, S. P., additional, McMorrow, D., additional, Ribeiro, P., additional, Auriel, G., additional, Azais, B., additional, Marec, R., additional, Calvel, P., additional, Bezerra, F., additional, and Ecoffet, R., additional

Published
2013
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20. Study of manufacturing variations impact on TID-ATREEs synergistic effect in LM124 operational amplifier

Author

Roig, F., primary, Dusseau, L., additional, Ribeiro, P., additional, Auriel, G., additional, Roche, N. J-H., additional, Privat, A., additional, Vaille, J.-R., additional, Boch, J., additional, Saigne, F., additional, Marec, R., additional, Calvel, P., additional, Bezerra, F., additional, Ecoffet, R., additional, and Azais, B., additional

Published
2013
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21. ELDRS: Optimization Tools for the Switched Dose Rate Technique

Author

Boch, J., primary, Gonzalez Velo, Y., additional, Saigne, F., additional, Roche, N. J.-H., additional, Perez, S., additional, Schrimpf, R. D., additional, Vaille, J.-R., additional, Dusseau, L., additional, Mekki, J., additional, Lorfevre, E., additional, and Ecoffet, R., additional

Published
2011
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24. A Comparison of Single-Event Transients in Pristine and Irradiated Al0.3{Ga0.7}{N/GaN} HEMTs using Two-Photon Absorption and Heavy Ions.

Author

Khachatrian, A., Roche, N. J.-H., Buchner, S., Koehler, A. D., Anderson, T. J., Ferlet-Cavrois, V., Muschitiello, M., McMorrow, D., Weaver, B., and Hobart, K. D.

Subjects
*SINGLE event effects, *MODULATION-doped field-effect transistors, *PHOTONS, *HEAVY ions, *PULSED lasers
Abstract

Single-event transients (SETs) were investigated in Al0.3{Ga0.7}{N/GaN} high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality. [ABSTRACT FROM PUBLISHER]

Published
2015
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25. Analysis of Angular Dependence of Single-Event Latchup Sensitivity for Heavy-Ion Irradiations of \0.18-\mu\m CMOS Technology.

Author

Artola, L., Roche, N. J.-H., Hubert, G., Al Youssef, A., Khachatrian, A., McMarr, P., and Hughes, H.

Subjects
*SINGLE event effects, *HEAVY ions, *ASTROPHYSICAL radiation, *COMPLEMENTARY metal oxide semiconductors, *ELECTROSTATIC discharges
Abstract

This paper presents the impact of ion angle on the single-event latuchup (SEL) cross section with the aim of improving the interpretation of latchup cross section obtained during heavy-ion experiments and the consequences on the latchup sensitivity for parts operating in the quasi-isotropic space radiation environment. First, latchup cross sections obtained from heavy-ion beams are presented and discussed. Then, the electrical I–V measurements are presented that lead to calibration of the TCAD structure and electrical latchup model implemented in MUSCA SEP3 tool. The TCAD simulations highlight the impact of both angle and roll effects on the latchup sensitivity induced by the asymmetric layout dependence of the parasitic latchup circuit. An LET dependence of the impact of angles on the latchup sensitivity has been demonstrated. Finally, the consequences of the angular distribution of the space radiation environment on the in-orbit latchup rate are discussed. The results show that the angular analysis would be necessary if the latchup rate at normal incidence were borderline or higher than acceptable for the specifications of the space mission. [ABSTRACT FROM PUBLISHER]

Published
2015
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26. SEL-Sensitive Area Mapping and the Effects of Reflection and Diffraction From Metal Lines on Laser SEE Testing.

Author

Dodds, N. A., Hooten, N. C., Reed, R. A., Schrimpf, R. D., Warner, J. H., Roche, N. J.-H., McMorrow, D., Buchner, S., Jordan, S., Pellish, J. A., Bennett, Gaspard, N. J., and King, M. P.

Subjects
COMPLEMENTARY metal oxide semiconductors, DIFFRACTION patterns, PLUG & play (Computer architecture), DIMENSIONAL analysis, SENSITIVITY analysis
Abstract

Laser and heavy-ion data reveal the areas and shapes of single-event latchup (SEL)-sensitive regions in CMOS test structures and their positions relative to the affected \p-n-p-n paths. Contrary to previous two-dimensional studies, this three-dimensional study shows that the position of maximum SEL sensitivity in these structures is not centered on a \p-n-p-n region, but between two neighboring \p-n-p-n regions, suggesting that synergistic triggering increases SEL sensitivity. [ABSTRACT FROM AUTHOR]

Published
2013
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27. Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect.

Author

Dodds, N. A., Hooten, N. C., Reed, R. A., Schrimpf, R. D., Warner, J. H., Roche, N. J.-H., McMorrow, D., Wen, S.-J., Wong, R., Salzman, J. F., Jordan, S., Pellish, J. A., Marshall, C. J., Gaspard, N. J., Bennett, W. G., Zhang, E. X., and Bhuva, B. L.

Subjects
HEAVY ions, NEUTRONS, SINGLE event effects, SILICON-on-insulator technology, COMPLEMENTARY metal oxide semiconductors
Abstract

Heavy ion, neutron, and laser experimental data are used to evaluate the effectiveness of various single event latchup (SEL) hardening strategies, including silicon-on-insulator (SOI), triple well, and guard rings. Although SOI technology is widely reported to be immune to SEL, conventional pnpn latchup can occur and has been observed in non-dielectrically isolated SOI processes. Triple well technologies are shown to be more robust against SEL than dual well technologies under all conditions used in this study, suggesting that the introduction of a deep N-well is an excellent zero-area-penalty hardening strategy. A single guard ring is shown to be sufficient for SEL immunity in the 180 nm CMOS technology investigated, and is likely sufficient for more modern CMOS technologies. [ABSTRACT FROM AUTHOR]

Published
2012
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