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106 results on '"Rochus, V."'

1. MEMS-above CMOS and novel optical MEMS sensor concepts

Author

Tilmans, H.A.C., primary, Rochus, V., additional, Jansen, R., additional, Westervelde, W.J., additional, Mahmud-ul-hasan, M., additional, Severi, S., additional, Figeys, B., additional, Lodewijks, K., additional, Seema, S., additional, and Rottenberg, X., additional

Published
2020
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2. List of contributors

Author

Aalto, Timo, primary, Airaksinen, Veli-Matti, additional, Albert, Stephan Gerhard, additional, Allegato, Giorgio, additional, Amiotti, Marco, additional, Anttila, Olli, additional, Auersperg, Juergen, additional, Bonucci, Antonio, additional, Bose, Indranil Ronnie, additional, Braun, Tanja, additional, Broas, Mikael, additional, Burggraf, J., additional, Cameron, Christopher, additional, Candler, Rob N., additional, Cao, Zhen, additional, Cardoso, André, additional, Chen, Kuo-Shen, additional, Conte, Andrea, additional, Cozma, Adriana, additional, Davis, Cristina E., additional, Dempwolf, Sophia, additional, Dixit, Pradeep, additional, Dost, Michael, additional, Dragoi, Viorel, additional, Eränen, Simo, additional, Fain, Bruno, additional, Figeys, B., additional, Fischer, Andreas C., additional, Flötgen, Christoph, additional, Franssila, Sami, additional, Friedberger, Alois, additional, Fueldner, Marc, additional, Ganchenkova, Maria, additional, Gonzalez, Pilar, additional, Gosálvez, Miguel A., additional, Grimes, Michael, additional, Haapalinna, Atte, additional, Hagelin, Paul, additional, Hammond, Paul, additional, Henttinen, Kimmo, additional, Henttonen, Vesa, additional, Horsley, David, additional, Hoshi, Takeo, additional, Itoh, Satoshi, additional, Jakobsen, Henrik, additional, Jansen, R., additional, Jonsson, Kerstin, additional, Kähler, Dirk, additional, Kannojia, Harindra Kumar, additional, Kattelus, Hannu, additional, Kissinger, Gudrun, additional, Knechtel, Roy, additional, Knese, Kathrin, additional, Kolari, Kai, additional, Koskenvuori, Mika, additional, Kuisma, Heikki, additional, Kulkarni, Amit, additional, Laermer, Franz, additional, Landesberger, Christof, additional, Leinenbach, Christina, additional, LeVasseur, Michael K., additional, Li, Jue, additional, Lin, Yuyuan, additional, Lindner, Paul F., additional, Lodewijks, K., additional, Lofink, Fabian, additional, Longoni, Giorgio, additional, Luber, Sebastian Markus, additional, Mahmud-ul-hasan, M., additional, Mäkinen, Jari, additional, Mäntysalo, Matti, additional, Martin, Devin, additional, Maspero, Federico, additional, Mattila, Toni T., additional, Mauri, Luca, additional, Merz, Peter, additional, Meyer, Doug, additional, Moraja, Marco, additional, Motooka, Teruaki, additional, Müller, Gerhard, additional, Muralt, Paul, additional, Nieminen, Risto M., additional, Niklaus, Frank, additional, Oggioni, Laura, additional, Olkkonen, Juuso, additional, Österlund, Elmeri, additional, Ou, Kuang-Shun, additional, Paloheimo, Jari, additional, Pasanen, Toni P., additional, Paulasto-Kröckel, Mervi, additional, Plach, Thomas, additional, Polizzi, Jean-Philippe, additional, Pressel, Klaus, additional, Putkonen, Matti, additional, Puurunen, Riikka L., additional, Reinert, Wolfgang, additional, Rizzi, Enea, additional, Rochus, V., additional, Ross, Glenn, additional, Rottenberg, X., additional, Sainiemi, Lauri, additional, Savin, Hele, additional, Schenk, Harald, additional, Schikowski, Marc, additional, Schulze, Matthias, additional, Seema, S., additional, Severi, S., additional, Skogström, Lasse, additional, Suga, Tadatomo, additional, Sullivan, Scott, additional, Suni, Tommi, additional, Theuss, Horst, additional, Tilli, Markku, additional, Tilmans, H.A.C., additional, Tittonen, Ilkka, additional, Tofteberg, Hannah, additional, Törmä, Pekka, additional, Tuomikoski, Santeri, additional, Tyholdt, Frode, additional, Uda, Tsuyoshi, additional, Vallin, Örjan, additional, Valzasina, Carlo, additional, Veijola, Timo, additional, Viinikka, Eeva, additional, Vogel, Dietmar, additional, Vogl, Andreas, additional, Vuorinen, Vesa, additional, Westervelde, W.J., additional, Wicht, Sebastian, additional, Wieland, Robert, additional, Winkler, Bernhard, additional, Yobas, Levent, additional, Zanotti, Luca, additional, and Zubel, I., additional

Published
2020
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3. Model of Electrostatic Actuated Deformable Mirror Using Strongly Coupled Electro-Mechanical Finite Element

Author

Rochus, V., Golinval, J. -C., Louis, C., Mendez, C., and Klapka, I.

Subjects
Computer Science - Other Computer Science
Abstract

The aim of this paper is to deal with multi-physics simulation of micro-electro-mechanical systems (MEMS) based on an advanced numerical methodology. MEMS are very small devices in which electric as well as mechanical and fluid phenomena appear and interact. Because of their microscopic scale, strong coupling effects arise between the different physical fields, and some forces, which were negligible at macroscopic scale, have to be taken into account. In order to accurately design such micro-electro-mechanical systems, it is of primary importance to be able to handle the strong coupling between the electric and the mechanical fields. In this paper, the finite element method (FEM) is used to model the strong coupled electro-mechanical interactions and to perform static and transient analyses taking into account large mesh displacements. These analyses will be used to study the behaviour of electrostatically actuated micro-mirrors., Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Published
2007

4. 3-D Self-Assembled Soi Mems: An Example of Multiphysics Simulation

Author

Mendez, C., Louis, C., Paquay, S., De Vincenzo, P., Klapka, I., Rochus, V., Iker, F., André, Nicolas, and Raskin, J. -P.

Subjects
Computer Science - Other Computer Science
Abstract

MEMS devices are typical systems where multiphysics simulations are unavoidable. In this work, we present possible applications of 3-D self-assembled SOI (Silicon-on-Insulator) MEMS such as, for instance, thermal actuators and flow sensors. The numerical simulations of these microsystems are presented. Structural and thermal parts have to be strongly coupled for correctly describing the fabrication process and for simulating the behavior of these 3-D SOI MEMS., Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Published
2007

13. Modelling and characterization of optical micromachined ultrasound sensors with a silicon photonic ring resonator in a buckled acoustical membrane

Author

Westerveld, W.J., Leinders, S.M., Neer, P.L.M.J. van, Snyder, B., Urbach, H.P., Jong, N. de, Verweij, M.D., Rottenberg, X., and Rochus, V.

Abstract

Future applications of ultrasonography in (bio-)medical imaging require ultrasound sensor matrices with small sensitive elements. Promising are opto-mechanical ultrasound sensors (OMUS) based on a silicon photonic ring resonator embedded in a silicondioxide acoustical membrane. This work presents new OMUS modelling: acoustomechanical non-linear FEM and photonic circuit equations. We show that initial wafer stress needs to be considered in the design: the acoustical resonance frequency changes considerably and OMUS sensitivity differs for up- or downwards buckled membranes. Simulated acoustical resonance frequency agrees well with measurements, assuming realistic SOI wafer stress. Measured sensitivity showed large device-to-device variation and simulations agree within this order of magnitude. We conclude that careful modeling of stress is necessary for the design of robust and sensitive sensors.

Published
2018

22. Influence of adhesive rough surface contact on microswitches.

Author

Wu, Ling, Rochus, V., Noels, L., and Golinval, J. C.

Subjects
*PHYSICS research, *MICROELECTROMECHANICAL systems, *MECHATRONICS, *SURFACE roughness, *SURFACE chemistry, *SURFACE tension, *LATTICE theory, *VAN der Waals forces
Abstract

Stiction is a major failure mode in microelectromechanical systems (MEMS). Undesirable stiction, which results from contact between surfaces, threatens the reliability of MEMS severely as it breaks the actuation function of MEMS switches, for example. Although it may be possible to avoid stiction by increasing restoring forces using high spring constants, it follows that the actuation voltage has also to be increased significantly, which reduces the efficiency. In our research, an electrostatic-structural analysis is performed to estimate the proper design range of the equivalent spring constant, which is the main factor of restoring force in MEMS switches. The upper limit of equivalent spring constant is evaluated based on the initial gap width, the dielectric thickness, and the expected actuation voltage. The lower limit is assessed on the value of adhesive forces between the two contacting rough surfaces. The MEMS devices studied here are assumed to work in a dry environment. In these operating conditions only the van der Waals forces have to be considered for adhesion. A statistical model is used to simulate the rough surface, and the Maugis’s model is combined with Kim’s expansion to calculate adhesive forces. In the resulting model, the critical value of the spring stiffness depends on the material and surface properties, such as the elastic modulus, surface energy, and surface roughness. The aim of this research is to propose simple rules for design purposes. [ABSTRACT FROM AUTHOR]

Published
2009
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23. Influence of adhesive rough surface contact on microswitches

Author

Ling Wu, Rochus, V., Noels, L., and Golinval, J.C.

Subjects
Elasticity -- Analysis, Electrostatic interactions -- Analysis, Failure mode and effects analysis -- Usage, Surface roughness -- Analysis, Physics
Abstract

The article employs an electrostatic-structural approach to explain the various effects of the adhesive rough surface contact on the properties and working of the microswitches. Estimation for the appropriate design of the equivalent spring constant used for the production of these microswitches is also presented.

Published
2009

24. Integrated photonics for miniature flow cytometry

Author

Verellen, N., primary, Vercruysse, D., additional, Rochus, V., additional, Bois, B.D., additional, Dusa, A., additional, Kerman, S., additional, Mahmud-Ul-Hasan, M., additional, Dorpe, P.V., additional, Rottenberg, X., additional, and Lagae, L., additional

Published
2017
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29. Pixel performance enhancement by integrated diffractive optics

Author

Rochus, V, Rottenberg, X, De Wolf, Ingrid, Soussan, P, and De Moor, P

Abstract

ispartof: pages:1-4 ispartof: 2015 International Image Sensor Workshop (IISW) pages:1-4 ispartof: 2015 International Image Sensor Workshop (IISW) location:Vaals, The Netherlands date:8 Jun - 11 Jun 2015 status: published

Published
2015

36. A MEMS-based xylophone bar magnetometer for pico satellites

Author

UCL - SST/ICTM/ELEN-Pôle en ingénierie électrique, Ranvier, S., Rochus, V., Druart, Sylvain, Lamy, H., Rochus, P., Francis, Laurent, 61st International Astronautical Congress 2010 (IAC 2010), UCL - SST/ICTM/ELEN-Pôle en ingénierie électrique, Ranvier, S., Rochus, V., Druart, Sylvain, Lamy, H., Rochus, P., Francis, Laurent, and 61st International Astronautical Congress 2010 (IAC 2010)

Abstract

Initially studied and developed by students in universities, the very small pico satellites (with a mass lower than 1 Kg) are more and more considered for science applications. In particular they will be used in constellations of small spacecraft for remote sensing of various regions of the magnetosphere. They require a payload with specific size, weight and power consumption. In order to respond to this demand, new instruments have to be developed. Those instruments should exhibit at least the same performance as those used in larger satellites while fulfilling the specific requirements imposed by the size of the satellites. For this reason, we currently develop a xylophone bar magnetometer (XBM) based on micro-electromechanical systems (MEMS) with integrated detector electronics. The principle of this magnetometer is based on classical resonating xylophone bar. A sinusoidal current oscillating at the fundamental transverse resonant frequency of the bar is applied to the bar. When an external magnetic field is present, the resulting Lorentz force causes the bar to vibrate at its fundamental frequency with a displacement directly proportional to the amplitude in one direction of the ambient magnetic field. When designing a MEMS XBM, the detection method is a crucial aspect. The measurement method largely influences the geometry of the magnetometer as well as the manufacturing technology. Due to the constraints in terms of size, weight and power consumption, the two most promising measurement methods identified are capacitive and piezoelectric. Designs which include these measurement techniques are presented and simulated under realistic conditions. A new configuration of PZT/Pt structure is introduced and leads to much better sensitivity than the traditional Pt/PZT/Pt sandwich structure. The principle of the electronic circuits enabling high sensitivity and low power consumption is presented. Finally, a design including lateral electrodes for capacitive measurement

Published
2010

42. Modeling of the fabrication and operation of 3-D self assembled SOI MEMS

Author

UCL - FSA/ELEC - Département d'électricité, Méndez, C., De Vincenzo, P., Klapka, I., Rochus, V., Iker, François, André, Nicolas, Raskin, Jean-Pierre, EuroSIME 2006 – Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems, UCL - FSA/ELEC - Département d'électricité, Méndez, C., De Vincenzo, P., Klapka, I., Rochus, V., Iker, François, André, Nicolas, Raskin, Jean-Pierre, and EuroSIME 2006 – Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems

Abstract

In this paper we present out-of-plane 3D self assembled SOI (silicon-on-insulator) MEMS that can be directly integrated to the electronic components. Because of their 3D nature, these structures can be used, for instance, as the basic elements for the construction of thermal actuators or flow sensors. We make a description of the fabrication and operation of these devices and we show how these two stages can be numerically simulated

Published
2006

43. 3-D self assembled SOI MEMS: fabrication and numerical simulation

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Méndez, C., De Vincenzo, P., Klapka, I., Rochus, V., Iker, F., André, N., Raskin, Jean-Pierre, 5th ESA Micro and Nanotechnologies Round Table, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Méndez, C., De Vincenzo, P., Klapka, I., Rochus, V., Iker, F., André, N., Raskin, Jean-Pierre, and 5th ESA Micro and Nanotechnologies Round Table

Abstract

The advantages of thin film SOI (Silicon-on-Insulator) technology for MOS circuits compared with thick SOI and bulk silicon MOS techniques are nowadays well known. Among them, we can mention a lower power consumption, better performance on high frequency operation and resistance to irradiation as well as better high temperature characteristics. These advantages in addition to a direct MEMS-IC integration make thin film SOI an attractive process for the manufacture of high quality MEMS and MOS integrated circuits for space applications. In this work, we present tridimensional (3-D) self-assembled multilayered SOI MEMS structures that can be used (but not limited) as flow sensors, thermal actuators and high frequency inductors. These MEMS consist of layers of Si, Si3N4 and Al deposited at different temperatures, and the final shape of the structure can be very different depending on the number, the nature and the thickness of the layers that are deposited. If the system consists only of one layer of Si, the structure remains flat after the release, whereas in the bilayer case (Si and Si3N4) the structure bends up. This is due to the thermal expansion coefficient of the Si3N4, which is higher than the Si one, and therefore the upper part of the structure contracts more than the lower part resulting in a curved shape. The thermal expansion coefficient of the Al being even greater than the Si3N4 one, we would then expect a larger curvature of the structure in the trilayer case, but considering the Al deposition temperature and the geometry we can demonstrate that the shape is rather flat. To obtain a curly shape in the trilayer structure an additional thermal step is needed. It could be a two minutes RTA (Rapid Thermal Annealing) at 600°C or a lower temperature annealing (432°C) but for a longer time (30 min). In order to make quantitative comparisons with numerical simulations, the final shape of these structures was completely characterized using laser interferometry.

Published
2005

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