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With the rapid increase in the use of lithium-ion batteries (LIBs), the development of safe LIBs has become an important social issue. Replacing flammable organic liquid electrolytes in current LIBs with water can be an alternative route to resolve this safety concern. The water-in-salt (WIS) electrolytes received great attention as next-generation electrolytes due to their large electrochemical stability window. However, their high cathodic limit remains as a challenge, impeding the use of low-potential anodes. Here, we report the first biodirected synthesis of carbonaceous layers on anodes to use them as interlayers that prevent a direct contact of water molecules to anode particles. High-aspect ratio microbes are utilized as precursors of carbonaceous layers on TiO2 nanoparticles (m-TiO2) to enhance the conductivity and to reduce the electrolysis of WIS electrolytes. We selected the cylindrical shape of microbes that offers geometric diversity, providing us a toolkit to investigate the effect of microbe length in forming the network in binary composites and their impacts on the battery performance with WIS electrolytes. Using microbes with varying aspect ratios, the optimal microbe size to maximize the battery performance is determined. The effects of storage time on microbe size are also studied. Compared to uncoated TiO2 anodes, m-TiO2 exhibited 49% higher capacity at the 40th cycle and enhanced the cycle life close to anodes made with a conventional carbon precursor while using an 11% less amount of carbon. We performed density functional theory calculations to unravel the underlying mechanism of the performance improvement using microbe-derived carbon layers. Computational results show that high amounts of pyridinic nitrogen present in the peptide bonds in microbes are expected to slow down the water diffusion. Our findings provide key insights into the design of an interlayer for WIS anodes and open an avenue to fabricate energy storage materials using biomaterials.

Scanning transmission electron microscopy (STEM) allows for imaging, diffraction, and spectroscopy of materials on length scales ranging from microns to atoms. By using a high-speed, direct electron detector, it is now possible to record a full two-dimensional (2D) image of the diffracted electron beam at each probe position, typically a 2D grid of probe positions. These 4D-STEM datasets are rich in information, including signatures of the local structure, orientation, deformation, electromagnetic fields, and other sample-dependent properties. However, extracting this information requires complex analysis pipelines that include data wrangling, calibration, analysis, and visualization, all while maintaining robustness against imaging distortions and artifacts. In this paper, we present py4DSTEM, an analysis toolkit for measuring material properties from 4D-STEM datasets, written in the Python language and released with an open-source license. We describe the algorithmic steps for dataset calibration and various 4D-STEM property measurements in detail and present results from several experimental datasets. We also implement a simple and universal file format appropriate for electron microscopy data in py4DSTEM, which uses the open-source HDF5 standard. We hope this tool will benefit the research community and help improve the standards for data and computational methods in electron microscopy, and we invite the community to contribute to this ongoing project.

Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual gallium arsenide (GaAs) nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of ∼5–20% up to a stress of 1–2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ four dimensional scanning TEM and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.

As CuBi2O4 is an emerging p-type semiconductor for applications as a photocathode in photoelectrochemical (PEC) solar fuel production, there is much to be understood about the uniqueness and common...

Neutron powder diffraction (NPD) and x-ray magnetic circular dichroism (XMCD) spectroscopy are employed to investigate the magnetism and spin structure in single-phase B20 Co1.043Si0.957. The magnetic contributions to the NPD data measured in zero fields are consistent with the helical order among the allowed spin structures derived from group theory. The magnitude of the magnetic moment is (0.3 ± 0.1)μB/Co according to NPD, while the surface magnetization probed by XMCD at 3 kOe is (0.18–0.31)μB/Co. Both values are substantially larger than the bulk magnetization of 0.11μB/Co determined from magnetometry at 70 kOe and 2 K. These experimental data indicate the formation of a helical spin phase and the associated conical states in high magnetic fields.

Ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 × 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ∼14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

Lepidocrocite-type titanates that reversibly intercalate sodium ions at low potentials (∼0.6 V vs Na/Na+) are promising anode candidates for sodium-ion batteries. However, large amounts of carbon additives are often used to improve their electrical conductivity and overcome poor cycling performance in the electrode composites. To ameliorate electronic transport issues of lepidocrocite titanate (K0.8Ti1.73Li0.27O4, KTL) in sodium-ion batteries, we have designed and synthesized heterostructures of exfoliated lepidocrocite-type titanium oxide (LTO) nanosheets with alternating carbon layers via a solution-based self-assembly approach. Positively charged dopamine (Dopa) was used as the carbon precursor and intercalated between negatively charged exfoliated titania nanosheets through electrostatic interaction. Dopa-intercalated LTO was then annealed under argon to form conductive carbon layers between titania sheets. The carbon content in the heterostructures was controlled by modifying the self-assembly conditions (i.e., pH, stirring duration, and Dopa-to-LTO ratio). Electrodes were prepared using carbonized heterostructures (LTO-C) without adding more carbon to the composites and tested in sodium half-cell configurations. Higher capacities and improved capacity retention over 250 cycles and lower impedance were observed, as the carbon content of LTO-C heterostructures was increased from 0% (LTO nanosheets) to 30%. These results indicate that the self-assembly approach for 2D heterostructured electrode materials is a promising strategy to overcome electronic transport limitations of layered transition-metal oxides and improve their electrochemical performance for next-generation energy storage applications.

Composite phases have been shown to improve both the thermoelectric efficiency and mechanical properties of materials. Here, we demonstrate an improved thermoelectric figure of merit, power factor,...

Assessing the intrinsic material performance of emerging copper-based ternary oxide photocathode candidate materials such as CuBi2O4 (CBO) has been challenging due to the formation of phase-segrega...

Néel-type skyrmions in van der Waals ferromagnetic Fe3GeTe2 on (Co/Pd)n superlattice were created without external magnetic field., Magnetic skyrmions are topological spin textures, which usually exist in noncentrosymmetric materials where the crystal inversion symmetry breaking generates the so-called Dzyaloshinskii-Moriya interaction. This requirement unfortunately excludes many important magnetic material classes, including the recently found two-dimensional van der Waals (vdW) magnetic materials, which offer unprecedented opportunities for spintronic technology. Using photoemission electron microscopy and Lorentz transmission electron microscopy, we investigated and stabilized Néel-type magnetic skyrmion in vdW ferromagnetic Fe3GeTe2 on top of (Co/Pd)n in which the Fe3GeTe2 has a centrosymmetric crystal structure. We demonstrate that the magnetic coupling between the Fe3GeTe2 and the (Co/Pd)n could create skyrmions in Fe3GeTe2 without the need of an external magnetic field. Our results open exciting opportunities in spintronic research and the engineering of topologically protected nanoscale features by expanding the group of skyrmion host materials to include these previously unknown vdW magnets.

Two-dimensional colloidal halide perovskite nanocrystals are promising materials for light emitting applications. In addition, they can be used as components to create a variety of materials through physical and chemical transformations. Recent studies focused on nanoplatelets that are able to self-assemble and transform on solid substrates. Yet, the mechanism behind the process and the atomic arrangement of their assemblies remain unclear. Here, we present the transformation of self-assembled stacks of CsPbBr$_3$ nanoplatelets in solution, capturing the different stages of the process by keeping the solutions at room temperature and monitoring the nanocrystal morphology over a period of a few months. Using ex-situ transmission electron microscopy and surface analysis, we demonstrate that the transformation mechanism can be understood as oriented attachment, proceeding through the following steps: i) desorption of the ligands from the particles surfaces, causing the merging of nanoplatelet stacks, which first form nanobelts; ii) merging of neighboring nanobelts that form more extended nanoplates; and iii) attachment of nanobelts and nanoplates, which create objects with an atomic structure that resemble a mosaic made of broken nanotiles. We reveal that the starting nanoplatelets merge seamlessly and defect-free on an atomic scale in small and thin nanobelts. However, aged nanobelts and nanoplates, which are mainly stabilized by amine/ammonium ions, link through a bilayer of CsBr. In this case, the atomic columns of neighboring perovskite lattices shift by a half-unit-cell, forming Ruddlesden-Popper planar faults., 28 pages, 5 Figures

Few transition metal oxides exhibit sufficient stability for aqueous ion intercalation from neutral pH electrolytes for low-cost aqueous Na+ batteries and battery-type desalinators. P2 layered Na+ manganese-rich oxides have high theoretical capacities and voltages for Na+ storage and are extensively investigated for non-aqueous Na+ batteries. However, the charge storage mechanism and factors controlling interlayer chemistry and redox behavior of these materials in aqueous electrolytes have not been determined. Here, we take a significant step in establishing their aqueous electrochemical behavior by investigating a series of P2 oxides that exhibit a range of stability in water and ambient air: Na0.62Ni0.22Mn0.66Fe0.10O2 (NaNMFe), Na0.61Ni0.22Mn0.66Co0.10O2 (NaNMCo), Na0.64Ni0.22Mn0.66Cu0.11O2 (NaNMCu), and Na0.64Mn0.62Cu0.31O2 (NaMCu). Depending on the transition metal composition and potential, all materials exhibit significant irreversible Na+ loss during the first anodic cycle followed by water intercalation into the interlayer. The presence of water causes conversion into birnessite-like phases and microscopic exfoliation of the particles. The interlayer affinity for water is primarily driven by the Na+ content, which can be tuned by the transition metal composition and the maximum anodic potential during electrochemical cycling. The interlayer water affects the reversible capacity and cycling stability of the oxides, with the highest reversible capacity (∼40 mA h g−1 delivered in ∼30 minutes) obtained with NaNMCo. These results present the first studies on the structural effects of aqueous electrochemistry in P2 oxides, highlight the significant differences in the electrochemical behavior of P2 oxides in aqueous vs. non-aqueous electrolytes, and provide guidance on how to use the transition metal chemistry to tune their aqueous charge storage behavior.

Two-dimensional colloidal halide perovskite nanocrystals are promising materials for light-emitting applications. Recent studies have focused on nanoplatelets that are able to self-assemble and transform on solid substrates. However, the mechanism behind the process and the atomic arrangement of their assemblies remain unclear. Here, we present a detailed analysis of the transformation of self-assembled stacks of CsPbBr3 nanoplatelets in solution over a period of a few months by using ex situ transmission electron microscopy and surface analysis. We demonstrate that the transformation mechanism can be understood as oriented attachment, proceeding through the following steps: (i) desorption of the ligands from the surfaces of the particles, causing the seamless atomic merging of nanoplatelet stacks into nanobelts; (ii) merging of neighboring nanobelts that form more extended nanoplates; and (iii) attachment of nanobelts and nanoplates, forming objects with an atomic structure that resembles a mosaic made of broken nanotiles. We reveal that aged nanobelts and nanoplates, which are mainly stabilized by amine/ammonium ions, link through a bilayer of CsBr, with the atomic columns of neighboring perovskite lattices shifted by a half-unit-cell, forming Ruddlesden–Popper planar faults. We also show, via in situ monitoring of the nanocrystal photoluminescence combined with transmission electron microscopy analysis, that the transformation is temperature driven and that it can take place within tens of minutes in solution and in spin-coated films. Understanding this process gives crucial information for the design and fabrication of perovskite materials, where control over the type and density of defects is desired, stimulating the development of perovskite nanocrystal structures with tailored electronic properties.

We report circularly polarized photoluminescence spectra taken from few layer MoS2 after treatment with a remotely generated oxygen plasma. Here, the oxygen plasma decouples the individual layers in MoS2 by perturbing the weak interlayer van der Waals forces without damaging the lattice structure. This decoupling causes a transition from an indirect to a direct band gap material, which causes a strong enhancement of the photoluminescence intensity. Furthermore, up to 80% circularly polarized photoluminescence is observed after plasma treatment of few layer MoS2 flakes, consistent with high spin polarization of the optically excited carriers. A strong degree of polarization continues up to room temperature, further indicating that the quality of the crystal does not suffer degradation due to the oxygen plasma exposure. Our results show that the oxygen plasma treatment not only engineers the van der Waals separation in these TMDC multilayers for enhanced PL quantum yields, but also produces high quality mul...

Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from semimetallic graphene, insulating boron nitride, to semiconductors with bandgaps from middle infrared to visible light. Here, we introduce new layered semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into long-wavelength infrared (LWIR) regime and cannot be readily reached by other layered materials. Moreover, polarization-resolved infrared absorption and Raman studies reveal in-plane anisotropic properties of b-AsP. This family of layered b-AsP materials extend the electromagnetic spectra covered by 2D layered materials to the LWIR regime, and may find unique applications for future all 2D layered material based devices., 31 pages, 13 figures (4 in main text and 9 in Supporting Information), 2 Tables. To appear in Advanced Materials, 2015

Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds and therefore make more “ideal” Schottky junctions than bulk semiconductors, which produce Fermi energy pinning and recombination centers at the interface with bulk metals, inhibiting charge transfer. Here, we observe a more than 10× enhancement in the indirect band gap photoluminescence of transition metal dichalcogenides (TMDCs) deposited on various metals (e.g., Cu, Au, Ag), while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2 and subsequently recombine radiatively with minority holes in the TMDC. Since the conduction band at the K-point is 0.5 eV higher than at the Σ-point, a lower Schottky barrier exists for the Σ-point band, making electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly ...

Plasmons can map temperature on the nanoscale Determining temperature on small length scales can be challenging: Direct probes can alter sample temperature, and radiation probes are limited by the wavelength of the light used. Mecklenberg et al. show how the bulk plasmon resonance of aluminum can be used to map the temperature on the nanoscale with transmission electron microscopy (see the Perspective by Colliex). Many other metals and semiconductors also have plasmon resonances that could also be used for temperature imaging. Science , this issue p. 629 ; see also p. 611

Transition metal dichalcogenides such as molybdenum disulfide (MoS2) may see service in the heart of next-generation nanoelectronic devices, where highly localized power dissipation can produce nontrivial temperature gradients over nanometer-scale distances. Here, we demonstrate that MoS2 is a promising target for plasmon energy expansion thermometry (PEET), a high-spatial resolution temperature mapping technique employed in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). We first use a calibrated, commercial MEMS-style TEM sample heater chip to measure the temperature dependence of the MoS2 bulk plasmon. We corroborate the chip's temperature calibration with Raman thermometry and determine the bulk thermal expansion coefficient (TEC) of MoS2 in the temperature range of 300–1100 K. Applying this TEC value to PEET measurements on a suspended MoS2 flake, we map 70–90 K/μm temperature gradients with a submicrometer spatial resolution.

The p-n junction diodes are formed by electrostatic doping using two gate electrodes positioned beneath individual, suspended single-walled carbon nanotubes (CNTs). These devices exhibit nearly ideal diode behavior within a small bias voltage range near 0 V. At higher bias (>\vert 0.2 V\vert), nonideal diode behavior is observed arising from Schottky contacts formed between the nanotube and its metal contact electrodes and the presence of electron tunneling between the N- and P-doped regions. We introduce a back-to-back diode model to explain the observed current versus voltage (I-V) characteristics. The reverse saturation current, parallel resistance, and open-circuit voltage dependence on gate voltage provide quantitative evidence for the theoretically predicted doping-induced bandgap shrinkage in CNTs. The minority carrier lifetimes are also estimated from this model.

We investigate the electronic and optoelectronic properties of quasi-metallic nanotube pn-devices, which have smaller band gaps than most known bulk semiconductors. These carbon nanotube-based devices deviate from conventional bulk semiconductor device behavior due to their low-dimensional nature. We observe rectifying behavior based on Zener tunneling of ballistic carriers instead of ideal diode behavior, as limited by the diffusive transport of carriers. We observe substantial photocurrents at room temperature, suggesting that these quasi-metallic pn-devices may have a broader impact in optoelectronic devices. A new technique based on photocurrent spectroscopy is presented to identify the unique chirality of nanotubes in a functional device. This chirality information is crucial in obtaining a theoretical understanding of the underlying device physics that depends sensitively on nanotube chirality, as is the case for quasi-metallic nanotube devices. A detailed model is developed to fit the observed I-V characteristics, which enables us to verify the band gap from these measurements as well as the dimensions of the insulating tunneling barrier region.

We report evidence for a structural phase transition in individual suspended metallic carbon nanotubes by examining their Raman spectra and electron transport under electrostatic gate potentials. The current-gate voltage characteristics reveal anomalously large quasi-metallic band gaps as high as 240 meV, the largest reported to date. For nanotubes with band gaps larger than 200 meV, we observe a pronounced M-shape profile in the gate dependence of the 2D band (or G’ band) Raman frequency. The pronounced dip (or softening) of the phonon mode near zero gate voltage can be attributed to a structural phase transition (SPT) that occurs at the charge neutrality point (CNP). The 2D band Raman intensity also changes abruptly near the CNP, providing further evidence for a change in the lattice symmetry and a possible SPT. Pronounced non-adiabatic effects are observed in the gate dependence of the G band Raman mode, however, this behavior deviates from non-adiabatic theory near the CNP. For nanotubes with band gaps larger than 200 meV, non-adiabatic effects should be largely suppressed, which is not observed experimentally. This data suggests that these large effective band gaps are primarily caused by a SPT to an insulating state, which causes the large modulation observed in the conductance around the CNP. Possible mechanisms for this SPT are discussed, including electron-electron (e.g., Mott) and electron-phonon (e.g., Peierls) driven transitions. Open image in new window

Here, we demonstrate that high energy electrons can be used to explore the collective oscillation of s, p, and d orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with the increasing Ga content. A comparison of the observed spectra with ab-initio theory reveals that the origin of these spectral features lies in excitations of 3d-electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al1–xGaxN due to the different polarizabilities of the d electrons. Finally, we study the dependence of observed spectral features on the Ga content, lending insights into the origin of these spectral features, and their coupling with electron-hole excitations.

Large-pore mesoporous silica nanoparticles (MSN) were prepared and functionalized to serve as a highly robust and biocompatible delivery platform for platinum-acridine (PA) anticancer agents. The material showed a high loading capacity for the dicationic, hydrophilic hybrid agent [PtCl(en)(N-[acridin-9-ylaminoethyl]-N-methylpropionamidine)] dinitrate salt (P1A1) and virtually complete retention of payload at neutral pH in a high-chloride buffer. In acidic media mimicking the pH inside the cells' lysosomes, rapid, burst-like release of P1A1 from the nanoparticles is observed. Coating of the materials in phospholipid bilayers resulted in nanoparticles with greatly improved colloidal stability. The lipid and carboxylate-modified nanoparticles containing 40 wt.% drug caused S phase arrest and inhibited cell proliferation in pancreatic cancer cells at submicromolar concentrations similar to carrier-free P1A1. The most striking feature of nanoparticle-delivered P1A1 was that the payload did not escape from the acidified lysosomal vesicles into the cytoplasm, but was shuttled to the nuclear membrane and released into the nucleus.

Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and variability of VT stems from unclean interfaces, trapped charges in the underlying substrate, and sulfur vacancies created during the mechanical exfoliation process. In this study, we demonstrate a simple and reliable oxygen plasma treatment, which mitigates the effects of unintentional doping created by surface defect cites, such as S vacancies, and surface contamination. This plasma treatment restores charge neutrality to the MoS2 and shifts the threshold turn-on voltage towards 0V. Out of the 8 devices measured, all exhibit a shift of the FET turn-on voltage from an average of -18.7V to -0.9V. The oxygen plasma treatment passivates these defects, which reduces surface scattering, causing increased mobility and improved subthreshold swing. For as-prepared devices with low mobilities (~0.01cm2/V.s), we observe up to a 190-fold increase in mobility after exposure to the oxygen plasma. Perhaps the most important aspect of this oxygen plasma treatment is that it reduces the device-to-device variability, which is a crucial factor in realizing any practical application of these devices.

We report Raman and photoluminescence spectra of mono- and few-layer WSe2 and MoSe2 taken before and after exposure to a remote oxygen plasma. For bilayer and trilayer WSe2, we observe an increase in the photoluminescence intensity and a blue shift of the photoluminescence peak positions after oxygen plasma treatment. The photoluminescence spectra of trilayer WSe2 exhibit features of a bilayer after oxygen plasma treatment. Bilayer WSe2 exhibits features of a monolayer, and the photoluminescence of monolayer WSe2 is completely absent after the oxygen plasma treatment. These changes are observed consistently in more than 20 flakes. The mechanism of the changes observed in the photoluminescence spectra of WSe2 is due to the selective oxidation of the topmost layer. As a result, N-layer WSe2 is reduced to N-1 layers. Raman spectra and AFM images taken from the WSe2 flakes before and after the oxygen treatment corroborate these findings. Because of the low kinetic energy of the oxygen radicals in the remote oxygen plasma, the oxidation is self-limiting. By varying the process duration from 1 to 10 min, we confirmed that the oxidation will only affect the topmost layer of the WSe2 flakes. X-ray photoelectron spectroscopy shows that the surface layer WOx of the sample can be removed by a quick dip in KOH solution. Therefore, this technique provides a promising way of controlling the thickness of WSe2 layer by layer.

© 2015 AIP Publishing LLC. Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS2heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.

Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS2 heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.

We report a robust method for engineering the optoelectronic properties of many-layer MoS 2 using low energy oxygen plasma treatment. Gas phase treatment of MoS 2 with oxygen radicals generated in an upstream N 2 -O 2 plasma is shown to enhance the photoluminescence (PL) of many-layer, mechanically exfoliated MoS 2 flakes by up to 20 times, without reducing the layer thickness of the material. A blue shift in the photoluminescence spectra and narrowing of linewidth is consistent with a transition of MoS 2 from indirect to direct band gap material. Atomic force microscopy and Raman spectra reveal that the flake thickness actually increases as a result of the plasma treatment, indicating an increase in the interlayer separation in MoS 2 . Ab-initio calculations reveal that the increased interlayer separation is sufficient to decouple the electronic states in individual layers, leading to a transition from an indirect to direct gap semiconductor. With optimized plasma treatment parameters, we observed enhanced PL signals for 32 out of 35 many-layer MoS 2 flakes (2–15 layers) tested, indicating this method is robust and scalable. Monolayer MoS 2 , while direct band gap, has a small optical density, which limits its potential use in practical devices. The results presented here provide a material with the direct band gap of monolayer MoS 2 , without reducing sample thickness, and hence optical density.

Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds and therefore make more "ideal" Schottky junctions than bulk semiconductors, which produce Fermi energy pinning and recombination centers at the interface with bulk metals, inhibiting charge transfer. Here, we observe a more than 10× enhancement in the indirect band gap photoluminescence of transition metal dichalcogenides (TMDCs) deposited on various metals (e.g., Cu, Au, Ag), while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2 and subsequently recombine radiatively with minority holes in the TMDC. Since the conduction band at the K-point is 0.5 eV higher than at the Σ-point, a lower Schottky barrier exists for the Σ-point band, making electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly with the electron wave functions in the metal. This enhancement in the indirect emission only occurs for thick flakes of MoS2 and WSe2 (≥100 nm) and is completely absent in monolayer and few-layer (∼10 nm) flakes. Here, the flake thickness must exceed the depletion width of the Schottky junction, in order for efficient radiative recombination to occur in the TMDC. The intensity of this indirect peak decreases at low temperatures, which is consistent with the hot electron injection model.

Small diameter single wall carbon nanotubes are desirable for various physical and electrical properties of carbon nanotubes. Here, we report the sensitivities of parameters and the optimal conditions for small diameter carbon nanotube growth by chemical vapor deposition (CVD). These results were obtained using the Taguchi method, which is commonly used to find the optimal parameters of various processes. The possible parameter ranges given by the experimental equipment and laboratory conditions, we attempted several times to determine the proper ranges, using photoluminescence (PL) imaging to determine the exact positions of suspended carbon nanotubes on the quartz substrates after synthesis. The diameters of the carbon nanotubes were then determined from the radial breathing modes (RBM) using Raman spectroscopy with a 785nm wavelength laser. Among the 4 major parameters listed above, we concluded that the temperature was the most significant parameter in determining carbon nanotube diameter, hydrogen flow rate was the second most significant, the ethanol and argon gas flow rate was the third, and finally time was the least significant factor.

We investigate the role of weak clamping forces, typically assumed to be infinite, in carbon nanotube mechanical resonators. Due to these forces, we observe a hysteretic clamping and unclamping of the nanotube device that results in a discrete drop in the mechanical resonance frequency on the order of 5-20 MHz, when the temperature is cycled between 340 and 375 K. This instability in the resonant frequency results from the nanotube unpinning from the electrode/trench sidewall where it is bound weakly by van der Waals forces. Interestingly, this unpinning does not affect the Q-factor of the resonance, since the clamping is still governed by van der Waals forces above and below the unpinning. For a 1 μm device, the drop observed in resonance frequency corresponds to a change in nanotube length of approximately 50-65 nm. On the basis of these findings, we introduce a new model, which includes a finite tension around zero gate voltage due to van der Waals forces and shows better agreement with the experimental data than the perfect clamping model. From the gate dependence of the mechanical resonance frequency, we extract the van der Waals clamping force to be 1.8 pN. The mechanical resonance frequency exhibits a striking temperature dependence below 200 K attributed to a temperature-dependent slack arising from the competition between the van der Waals force and the thermal fluctuations in the suspended nanotube.