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1. Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Author

Eric Tournié, Laura Monge Bartolome, Marta Rio Calvo, Zeineb Loghmari, Daniel A. Díaz-Thomas, Roland Teissier, Alexei N. Baranov, Laurent Cerutti, and Jean-Baptiste Rodriguez

Subjects
Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

Abstract There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

Published
2022
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2. Photoacoustic characteristics of carbon-based infrared absorbers

Author

Jussi Rossi, Juho Uotila, Sucheta Sharma, Toni Laurila, Roland Teissier, Alexei Baranov, Erkki Ikonen, and Markku Vainio

Subjects
Candle soot, Carbon nanotubes, Photoacoustic response, Physics, QC1-999, Acoustics. Sound, QC221-246, Optics. Light, QC350-467
Abstract

We present an experimental comparison of photoacoustic responsivities of common highly absorbing carbon-based materials. The comparison was carried out with parameters relevant for photoacoustic power detectors and Fourier-transform infrared (FTIR) spectroscopy: we covered a broad wavelength range from the visible red to far infrared (633 nm to 25 μm) and the regime of low acoustic frequencies (< 1 kHz). The investigated materials include a candle soot-based coating, a black paint coating and two different carbon nanotube coatings. Of these, the low-cost soot absorber produced clearly the highest photoacoustic response over the entire measurement range.

Published
2021
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3. InAs-Based Quantum Cascade Lasers with Extremely Low Threshold

Author

Kumar Kinjalk, Daniel Andres Díaz-Thomas, Zeineb Loghmari, Michael Bahriz, Roland Teissier, and Alexei N. Baranov

Subjects
quantum cascade lasers, mid-infrared lasers, Applied optics. Photonics, TA1501-1820
Abstract

We report InAs-based quantum cascade lasers (QCLs) operating near 14 µm with a threshold current density Jth as low as 0.6 kA/cm2 at room temperature. The threshold obtained is lower than the Jth of the best reported InP-based QCLs to date without facet treatment. The achieved performance improvement is partially due to an increased separation between the upper transition level and the next one in the active quantum wells of the employed QCL design.

Published
2022
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4. Quantum cascade lasers grown on silicon

Author

Hoang Nguyen-Van, Alexei N. Baranov, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Gregoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Eric Tournié, and Roland Teissier

Subjects
Medicine, Science
Abstract

Abstract Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Published
2018
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5. Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

Author

Hoang Nguyen Van, Zeineb Loghmari, Hadrien Philip, Michael Bahriz, Alexei N. Baranov, and Roland Teissier

Subjects
quantum cascade laser, distributed feedback, long wavelength infrared, molecular spectroscopy, Applied optics. Photonics, TA1501-1820
Abstract

The extension of the available spectral range covered by quantum cascade lasers (QCL) would allow one to address new molecular spectroscopy applications, in particular in the long wavelength domain of the mid-infrared. We report in this paper the realization of distributed feedback (DFB) QCLs, made of InAs and AlSb, that demonstrated a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm, with output powers in the mW range. This is the longest wavelength for DFB QCLs, and for any QCLs or semiconductor lasers in general, operating in a CW at room temperature.

Published
2019
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13. Benzene sensing by Quartz Enhanced Photoacoustic Spectroscopy at 14.85 µm

Author

Diba Ayache, Wioletta Trzpil, Roman Rousseau, Kumar Kinjalk, Roland Teissier, Alexei N. Baranov, Michael Bahriz, and Aurore Vicet

Subjects
Atomic and Molecular Physics, and Optics
Abstract

Benzene is a gas known to be highly pollutant for the environment, for the water and cancerogenic for humans. In this paper, we present a sensor based on Quartz Enhanced Photoacoustic Spectroscopy dedicated to benzene analysis. Exploiting the infrared emission of a 14.85 µm quantum cascade laser, the sensor is working in an off-beam configuration, allowing easy alignment and stable measurements. The technique provides a very good selectivity to the sensor and a limit of detection of 30 ppbv in 1 s, i.e. a normalized noise equivalent absorption of 1.95 × 10−8 W.cm−1.Hz−1/2. The achieved performances of the sensor have enabled measurements on several air samples of a gas station showing a non-neglectable risk in case of long exposure.

Published
2022

14. Optical power detector with broad spectral coverage, high detectivity, and large dynamic range

Author

Jussi Rossi, Juho Uotila, Sucheta Sharma, Tuomas Hieta, Toni Laurila, Roland Teissier, Alexei Baranov, Erkki Ikonen, Markku Vainio, Tampere University, Physics, Department of Chemistry, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics - Instrumentation and Detectors, Physics::Instrumentation and Detectors, 116 Chemical sciences, FOS: Physical sciences, Physics::Optics, PHOTOACOUSTIC-SPECTROSCOPY, Instrumentation and Detectors (physics.ins-det), PYROELECTRIC DETECTOR, 114 Physical sciences, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Atomic and Molecular Physics, and Optics, LINEARITY, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Optics (physics.optics), Physics - Optics
Abstract

Optical power measurements are needed in practically all technologies based on light. Here, we report a general-purpose optical power detector based on the photoacoustic effect. Optical power incident on the detector’s black absorber produces an acoustic signal, which is further converted into an electrical signal using a silicon-cantilever pressure transducer. We demonstrate an exceptionally large spectral coverage from ultraviolet to far infrared, with the possibility for further extension to the terahertz region. The linear dynamic range of the detector reaches 80 dB, ranging from a noise-equivalent power of 6 n W / H z to 600 mW (independent of signal averaging time).

Published
2022

16. MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON

Author

Eric Tournié, Marta Rio Calvo, Laura Monge-Bartolome, Zeineb Loghmari, Roland Teissier, Baranov, A. N., Laurent Cerutti, Jean-Baptiste Rodriguez, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), European Project: 780240, Photonique et Ondes (PO), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), and Matériaux (MAT)

Subjects
[SPI]Engineering Sciences [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021

18. Features of Tunneling Current in Superlattices with Electrical Domains

Author

Roland Teissier, Alexei N. Baranov, I. V. Altukhov, A. A. Usikova, Miron S. Kagan, I. A. Kohn, N. D. Il’inskaya, N. A. Khvalkovskiy, S. K. Paprotskiy, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Phonon, Superlattice, media_common.quotation_subject, 02 engineering and technology, 01 natural sciences, Asymmetry, Condensed Matter::Materials Science, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Quantum well, Quantum tunnelling, media_common, 010302 applied physics, Radiation, Condensed matter physics, 020206 networking & telecommunications, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, Hysteresis, Maxima, Voltage
Abstract

—The tunneling electron transport in GaAs/AlAs and InAs/AlSb superlattices with electric domains at room temperature is studied. At voltages above the threshold for the formation of domains, a series of maxima on the current–voltage characteristics, almost equidistant in voltage, and current hysteresis during direct and reverse voltage sweeps were found. An explanation is proposed relating the origin of these maxima to tunnel transitions between quantum wells in a triangular domain, assisted by the emission of optical phonons, and hysteresis with a transition between modes with a moving and static domain. The large asymmetry of the transition times between domain modes was found.

Published
2019

19. Mid-IR lasers epitaxially grown on on-axis (001) Silicon

Author

Michael Bahriz, Ariane Meguekam, Marta Rio Calvo, Eric Tournié, Daniel A. Diaz-Thomas, Laura Monge-Bartolome, Zeineb Loghmari, Jean-Baptiste Rodriguez, Guilhem Boissier, Roland Teissier, Laurent Cerutti, Alexei N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Silicon photonics, Materials science, Silicon, business.industry, chemistry.chemical_element, Laser, Epitaxy, law.invention, Wavelength, [SPI]Engineering Sciences [physics], chemistry, law, Etching (microfabrication), Optoelectronics, Wafer, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on laser diodes (LDs), interband-cascade lasers (ICLs) and quantum-cascade lasers (QCLs), all grown on on-axis (001) Si substrates and covering emission wavelengths from 2 to 10 µm. In addition, we will demonstrate that etching facets is a viable route toward cavity definition either on plain wafers or recessed Si wafers.

Published
2021

20. Long wavelength (λ = 10 - 20 µm) mid-IR quantum cascade lasers for spectroscopy applications

Author

Alexei N. Baranov, Hadrien Philip, Zeineb Loghmari, Michael Bahriz, and Roland Teissier

Subjects
Range (particle radiation), Materials science, Thermoelectric cooling, business.industry, Grating, Laser, law.invention, Wavelength, Cascade, law, Optoelectronics, business, Spectroscopy, Quantum
Abstract

We report new developments of quantum cascade lasers (QCL), made of InAs/AlSb, operating in the long wavelength mid-infrared range from 10 to 20 µm. Fabry-Perot lasers operated in the CW regime up to a wavelength of 18 µm at 40°C, and up to 21 µm on Peltier cooler, with threshold current densities below 1 kA/cm². Distributed feedback QCL are also fabricated using a metal grating on the top of the laser ridges. They demonstrated single frequency operation in CW regime at room temperature. These lasers are suitable for new high resolution spectroscopy applications in this almost unexplored spectral range.

Published
2021

21. Turn-on delay in the mid-infrared quantum-cascade lasers: experiment and numerical simulations

Author

A. G. Gladyshev, Sergey O. Slipchenko, Grigorii S. Sokolovskii, Alexei N. Baranov, A. V. Babichev, Nikita A. Pikhtin, Anton Yu. Egorov, Leonid Ya. Karachinsky, S. N. Losev, Andrey V. Lutetskiy, I. I. Novikov, Dmitry A. Veselov, Evgenia D. Cherotchenko, E. A. Kognovitskaya, V. I. Kuchinskii, Vladislav V. Dudelev, D. V. Denisov, Roland Teissier, and Dmitry A. Mikhailov

Subjects
Physics, Computer simulation, Mid infrared, Physics::Optics, Laser, Pulse shaping, Computational physics, law.invention, Condensed Matter::Materials Science, law, Cascade, Turn (geometry), Spontaneous emission, Quantum
Abstract

Turn-on delay is measured to be much longer and its pump-current dependence different from theoretical predictions for mid-infrared InP- and InAs-based quantum-cascade lasers. Experiment qualitatively agrees with numerical simulations of rate-equations under non-zero rise-time pumping.

Published
2021

22. Study of resonant transport in InAs-based quantum hot electron transistors

Author

Roland Teissier, Alexei N. Baranov, M. Zaknoune, H. Nguyen Van, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The authors thank the support of French Agence Nationale de la Recherche under the program TACHUS2 (Grant No. ANR-08-BLANC-0299), and ANR-08-BLAN-0299,TACHUS2,Transistors à électrons chauds ultra-rapide à base d'InAs(2008)

Subjects
Materials science, General Physics and Astronomy, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, 7. Clean energy, law.invention, Computer Science::Hardware Architecture, [SPI]Engineering Sciences [physics], Computer Science::Emerging Technologies, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Breakdown voltage, Quantum, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, Common emitter, 010302 applied physics, business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Hot electron transistors, lcsh:QC1-999, Optoelectronics, Physics::Accelerator Physics, Current (fluid), 0210 nano-technology, business, lcsh:Physics
Abstract

A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors.

Published
2020

23. Strong optical coupling between semiconductor microdisk lasers: From whispering gallery modes to collective modes

Author

Alexei N. Baranov, Mikhail Roiz, Roland Teissier, A. M. Monakhov, E.V. Kunitsyna, Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), University of Helsinki, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Department of Chemistry

Subjects
116 Chemical sciences, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, Optical coupling, law.invention, RESONATORS, law, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, Coupling, [PHYS]Physics [physics], business.industry, Single-mode optical fiber, Mode (statistics), Resonance, 021001 nanoscience & nanotechnology, Laser, Semiconductor, Optoelectronics, Whispering-gallery wave, 0210 nano-technology, business
Abstract

In the present paper, we investigate a special type of optical coupling between two electrically pumped semiconductor whispering gallery mode lasers. We fabricate microdisk lasers with a conjunction between the laser cavities, making the coupling stronger. Our experimental results combined with numerical calculations demonstrate a variety of mode families that exist in such systems. Furthermore, we confirm the generation of resonance modes that exist only under simultaneous pumping conditions. These modes are attributed to the collective mode family, which can lead to a single mode operation.

Published
2020

24. InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Author

Roland Teissier, Laurent Cerutti, A. Meguekam, Michael Bahriz, Jean-Baptiste Rodriguez, Alexei N. Baranov, M. Rio-Calvo, Eric Tournié, Zeineb Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Materials science, Threshold current, Silicon, Computer Networks and Communications, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 7. Clean energy, law.invention, 010309 optics, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, business.industry, lcsh:TA1501-1820, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, 0210 nano-technology, business
Abstract

International audience; We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92-0.95 kA/cm 2 at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm 2 and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.

Published
2020
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25. Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates

Author

Jean-Baptiste Rodriguez, Rio Calvo, M., Laurent Cerutti, Laura Monge-Bartolomé, Michael Bahriz, Alexei Baranov, Roland Teissier, Eric Tournié, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), and ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

26. InAs‐based quantum cascade lasers emitting close to 25 µm

Author

A. Meguekam, Roland Teissier, Alexei N. Baranov, Michael Bahriz, Z. Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Threshold current, Physics::Instrumentation and Detectors, Physics::Optics, 02 engineering and technology, law.invention, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, chemistry.chemical_compound, law, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Quantum, ComputingMilieux_MISCELLANEOUS, business.industry, 020208 electrical & electronic engineering, Laser, Cladding (fiber optics), chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Pulsed mode, Indium arsenide, business, Current density
Abstract

Indium arsenide (InAs)-based quantum cascade lasers (QCLs) operating close to 25 µm are reported. Thick n-doped InAs cladding layers were used for optical confinement. Fabry–Perot lasers exhibited a threshold current density as low as 1.1 kA/cm2 in pulsed mode at 80 K. The lasers operated in this regime up to 240 K, where the threshold current density increased up to 1.7 kA/cm2. These are the lowest threshold current densities for QCLs operating above 20 µm.

Published
2019

27. Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape

Author

Prokhor A. Alekseev, Grigorii S. Sokolovskii, Mikhail S. Dunaevskiy, Roland Teissier, A. M. Monakhov, Richard Arinero, Alexei N. Baranov, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Work (thermodynamics), Geometrical optics, 02 engineering and technology, Visible radiation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electromagnetic radiation, Atomic and Molecular Physics, and Optics, Electronic equipment, Electronic, Optical and Magnetic Materials, Resonator, Wavelength, Photon emission, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Atomic physics, 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

This work was devoted to the study of stable and unstable optical modes in segment shaped resonators. The size of the studied resonators was much larger than the wavelength of the emitted light, that allowed to use the approaches of geometric optics. It was observed, that with an increase in the δ/R deviation parameter (where δ is the deviation from the center of the half-disk) only a small number of stable spatial modes remain. The possibility of the existence of “sealed” (non-radiating modes) and “open” modes (radiating modes) in resonators of this type was also shown.

Published
2018

28. Long wavelength (λ = 10 - 18 μm) mid-IR quantum cascade lasers operating in a continuous wave at room temperature

Author

F. Barho, Hadrien Philip, Michael Bahriz, Z. Loghmari, Roland Teissier, and Alexei N. Baranov

Subjects
Range (particle radiation), Materials science, business.industry, Terahertz radiation, Physics::Optics, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, 010309 optics, Long wavelength, Wavelength, Cascade, law, 0103 physical sciences, Continuous wave, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

We report a study of quantum cascade lasers (QCL), made of InAs and AlSb, operating in the long wavelength mid-infrared range. Lasers based on a design with slightly diagonal intersubband transitions demonstrated improved performances as compared to the previously reported devices employing a vertical scheme. The fabricated lasers operated in the CW regime at 40°C up to a wavelength of 18 μm.

Published
2019

29. Low-pump irradiance to modulate THz waves driven by photo-generated carriers in an InAs slab

Author

Alexei N. Baranov, R. Smaali, Thierry Taliercio, Philippe Nouvel, E. Alvear-Cabezon, F. Gonzalez-Posada, Stéphane Blin, Emmanuel Centeno, and Roland Teissier

Subjects
Permittivity, 0303 health sciences, Electromagnetics, Materials science, business.industry, Terahertz radiation, Ambipolar diffusion, 02 engineering and technology, Rate equation, 021001 nanoscience & nanotechnology, Optical pumping, 03 medical and health sciences, Modulation, Continuous wave, Optoelectronics, 0210 nano-technology, business, 030304 developmental biology
Abstract

We theoretically and experimentally study the THz electromagnetic properties of an undoped-InAs slab whose permittivity is optically modified by a photo-generation process. The modulation of the permittivity is calculated by solving the ambipolar rate equation for the free carriers. Experiment results demonstrate that InAs is a promising semiconductor to manufacture fast and efficiently on-chip THz components. We show a high modulation of the THz transmission up to 100% from 0.75 to 1.1THz at very low pump fluence in the continuous wave regime. We also demonstrate a high-speed transmission modulation rate up to the MHz range with a modulated pump.

Published
2019

30. Mid-IR lasers epitaxially grown on silicon

Author

Tournié, E., Jean-Baptiste Rodriguez, Laurent Cerutti, Rio Calvo, M., Laura Monge-Bartolomé, Bahriz, M., Roland Teissier, Alexei Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2019

31. Terahertz quantum cascade laser with non-resonant extraction

Author

Zeineb Loghmari, Alexei N. Baranov, Michael Bahriz, H. Nguyen-Van, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Terahertz radiation, Phonon, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Gallium arsenide, chemistry.chemical_compound, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, lcsh:QC1-999, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Waveguide, lcsh:Physics
Abstract

In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.

Published
2019

32. Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)

Author

Alexei N. Baranov, Philippe Christol, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Laurent Cerutti, Jean-Philippe Perez, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, media_common.quotation_subject, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Presentation, 0103 physical sciences, Antimonide, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy, media_common
Abstract

International audience

Published
2019

33. Off-beam QEPAS sensor using an 11-μm DFB-QCL with an optimized acoustic resonator

Author

Michael Bahriz, Roman Rousseau, Kaim Chamassi, Alexei N. Baranov, Zeineb Loghmari, Aurore Vicet, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Detection limit, Materials science, Mems microphone, business.industry, Stray light, Photoacoustic imaging in biomedicine, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], Optics, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Quantum cascade laser, business, Photoacoustic spectroscopy, Beam (structure), ComputingMilieux_MISCELLANEOUS
Abstract

An off-beam quartz-enhanced photoacoustic spectroscopy (QEPAS) sensor was designed for ethylene detection using a distributed-feedback quantum cascade laser (QCL) operating in the mid-infrared around 11 μm. The acoustic microresonator configuration was experimentally optimized using an original open-cell photoacoustic setup with a MEMS microphone. Correction factors based on theoretical acoustic models were introduced in order to accurately describe the response of millimeter-sized acoustic resonators. The optimized QEPAS sensor exhibited a limit of detection of 60 ppb for 60 s integration, giving a NNEA of 4.8 × 10−8 W·cm−1·Hz-0.5.

Published
2019

34. Observation of the increase in turn-on delay of quantum cascade lasers under pulsed electrical pumping with finite rise time

Author

D. A. Mikhailov, Nikita A. Pikhtin, E. D. Cherotchenko, Grigorii S. Sokolovskii, Alexei N. Baranov, Innokenty I. Novikov, D. V. Denisov, D. A. Veselov, A. G. Gladyshev, Sergey O. Slipchenko, S. N. Losev, A. V. Babichev, A. Yu. Egorov, E. A. Kognovitskaya, V. I. Kuchinskii, A. V. Lutetskiy, L. Ya. Karachinsky, Roland Teissier, and Vladislav V. Dudelev

Subjects
History, Materials science, business.industry, Laser, Computer Science Applications, Education, law.invention, law, Cascade, Rise time, Turn (geometry), Optoelectronics, business, Quantum
Abstract

We demonstrate the experimental measurements of the turn-on delay in InAs-and InP-based quantum cascade lasers operating under pulsed electrical pumping with non-zero rise time. We report the unexpected delay time dependence on the pumping current density, that does not agree with available theoretical predictions. Performed numerical simulation of the model based on rate equations is only in qualitative, but not quantitative, agreement with our observations.

Published
2020

35. Epsilon near-zero all-optical terahertz modulator

Author

Alexei N. Baranov, E. Alvear-Cabezon, Emmanuel Centeno, Stéphane Blin, R. Smaali, Roland Teissier, Thierry Taliercio, F. Gonzalez-Posada, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Clermont Auvergne [2017-2020] (UCA [2017-2020]), Institut Pascal (IP), and SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Terahertz radiation, business.industry, Attenuation, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Amplitude modulation, Semiconductor, Transmission (telecommunications), Modulation, law, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Irradiation, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; We propose an efficient optically actuated THz modulator based on an ultrathin epsilon-near-zero (ENZ) slab photogenerated in an InAs semiconductor. We experimentally demonstrate a modulation depth of 90% at 1 THz obtained with a continuous laser at irradiation lower than 10 W cm À2. Beyond the strong attenuation of the THz transmission provided by the ENZ absorption effect, we also report a broadband modulation of the THz waves from 1 to 10 THz. In addition, our experimental results show that the cutoff frequency of 3 dB attains 2 MHz in the dynamic modulation regime.

Published
2020

36. Room temperature continuous wave operation of InAs/AlSb-based quantum cascade laser at λ ∼11 µm

Author

H. Nguyen Van, Michael Bahriz, Andrey N. Baranov, A. Meguekam, D. Díaz Thomas, Roland Teissier, Zeineb Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 7. Clean energy, 01 natural sciences, law.invention, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], Cascade, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, Wafer, Electrical and Electronic Engineering, 0210 nano-technology, Quantum cascade laser, business, Current density, Quantum, ComputingMilieux_MISCELLANEOUS
Abstract

The InAs/AlSb quantum cascade lasers (QCLs) operating ∼11 µm in the continuous wave (cw) regime at room temperature are reported. The lasers with cleaved Fabry–Perot resonators demonstrated pulsed threshold current densities below 1 kA/cm2 at 300 K and operated in a cw up to 320 K that is the maximum temperature of such regime of operation for InAs-based QCLs. Distributed feedback lasers fabricated from the same wafer exhibited single frequency emission near 11 µm and operated in the cw regime up to 295 K.

Published
2018

37. Half-disk laser: insight into the internal mode structure of laser resonators

Author

Alexei N. Baranov, Vladislav V. Dudelev, A. M. Monakhov, Prokhor A. Alekseev, Richard Arinero, Mikhail S. Dunaevskiy, Grigorii S. Sokolovskii, Roland Teissier, Institut d’Electronique et des Systèmes ( IES ), Université de Montpellier ( UM ) -Centre National de la Recherche Scientifique ( CNRS ), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Geometrical optics, business.industry, Physics::Optics, Near and far field, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, Resonator, [SPI]Engineering Sciences [physics], Optics, law, Optical cavity, 0103 physical sciences, [ SPI ] Engineering Sciences [physics], Disk laser, Emission spectrum, Whispering-gallery wave, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

Usually electromagnetic modes inside a laser resonator are a matter of the theoretical studies. In a sense we manage "to have a look into a whispering gallery mode (WGM) resonator" and observe how the resonator modes arrange in reality. The picture occurs to be quite different from the commonly used Bessel modes in a disk resonator. A chance to explore optical modes inside a resonator appears in a WGM laser with a cleaved cavity. The flat laser facet gives an opportunity to study both far and near field patterns formed by different modes. In this research we use a high resolution technique of detection of laser emission based on an atomic force microscope, which allowed us to visualize even high Q modes normally sealed inside the resonator. This information was completed with spatially resolved emission spectra and far-field patterns measured using an infrared camera. The analysis of the obtained results using both wave and geometrical optics approaches and finite elements simulations showed that emission of the studied devices is governed by a few low order optical modes experiencing a small number of reflections from the resonator walls. These modes can be considered as counter propagating Gaussian beams and their interference at the laser facet was also observed in the experiment. This work showed that, contrary to conventional ridge or surface emitting lasers, in such deformed disk resonators outputs of different optical modes are spatially separated and can be studied individually along the cleaved facet of the laser.

Published
2018

38. Intersubband polaritons at λ ∼ 2 μ m in the InAs/AlSb system

Author

L. Le Gratiet, Raffaele Colombelli, Jean-Michel Manceau, Adel Bousseksou, T. Laurent, Roland Teissier, Alexei N. Baranov, Pierre Laffaille, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, [PHYS]Physics [physics], Physics and Astronomy (miscellaneous), business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 0103 physical sciences, Polariton, Optoelectronics, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

39. Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si

Author

Alexei N. Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), ANR-12-BS03-0002,OPTOSI,Intégration par épitaxie de composants optoélectroniques III-V sur Si(2012), and ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Nucleation, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Semiconductor laser theory, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Antimonide, Optoelectronics, Continuous wave, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We review the recent achievements in the epitaxial integration of III-Sb-based semiconductor lasers on Si substrates. Much work has been done on substrate preparation and III-Sb on Si nucleation, which allowed demonstrating GaInAsSb/AlGaAsSb quantum-well laser diodes operating in continuous wave above room temperature in the 1.5–2.3 μm range and InAs/AlSb quantum cascade lasers emitting near 11 μm operating up to 400 K. Although work remains to be done, in particular toward crystal defect density reduction, the wide wavelength range at reach with the III-Sb technology opens the way to the development of a large portfolio of mid-IR sensing systems.

Published
2018

40. Spatial mode structure in a half-disk cavity laser

Author

Alexei N. Baranov, Mikhail S. Dunaevskiy, A. M. Monakhov, Roland Teissier, Vladislav V. Dudelev, Grigorii S. Sokolovskii, and Prokhor A. Alekseev

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, Laser pumping, Injection seeder, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Optics, law, Quantum dot laser, 0103 physical sciences, Optoelectronics, Laser power scaling, Whispering-gallery wave, 0210 nano-technology, business, Quantum well, Tunable laser
Abstract

We experimentally and theoretically examined the mode structure of half-disk lasers fabricated by cleaving whispering gallery mode (WGM)-disk lasers. The WGM lasers with a radii R of 50–150 μm emitting near 2.2 μm were fabricated using the GaSb-based quantum well structure [1]. The cleavage usually passes not through the centre of the disk with the deviation δ/R up to 20 % (Fig. 1a). Recently we have demonstrated that in the half-disk lasers the output beam is formed by optical modes located at a distance of 5–20 μm from the disk periphery [2], whereas in the full disk the light propagates along the disk wall, much closer to its edges.

Published
2017

42. Continuous wave operation of InAs-based quantum cascade lasers at 20 μm

Author

Alexei N. Baranov, A. Meguekam, H. Nguyen Van, Roland Teissier, Z. Loghmari, Michael Bahriz, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Threshold current, Physics and Astronomy (miscellaneous), business.industry, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, Cladding (fiber optics), 7. Clean energy, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Cascade, law, Optical cavity, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Pulsed mode, Continuous wave, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

International audience; We report low threshold continuous wave (CW) operation of InAs/AlSb quantum cascade lasers emitting around 20 lm. The laser cavity was made of a plasmon-enhanced dielectric waveguide with cladding layers made of n-InAs. The devices exhibited a threshold current density of 1.38 kA/cm 2 at the maximum temperature of CW operation of 240 K and an output power of 14 mW/facet at T ¼ 80 K. In pulsed mode, the lasers operated up to 380 K with a threshold current density of 1.15 kA/cm 2 at room temperature.

Published
2019

43. Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

Author

Alexei N. Baranov, Michael Bahriz, Zeineb Loghmari, Hadrien Philip, Hoang Nguyen Van, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Materials science, Physics::Optics, quantum cascade laser, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, 010309 optics, law, 0103 physical sciences, Radiology, Nuclear Medicine and imaging, Instrumentation, Quantum, long wavelength infrared, business.industry, Single-mode optical fiber, lcsh:TA1501-1820, distributed feedback, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Wavelength, Cascade, molecular spectroscopy, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, 0210 nano-technology, Quantum cascade laser, business
Abstract

International audience; The extension of the available spectral range covered by quantum cascade lasers (QCL) would allow one to address new molecular spectroscopy applications, in particular in the long wavelength domain of the mid-infrared. We report in this paper the realization of distributed feedback (DFB) QCLs, made of InAs and AlSb, that demonstrated a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm, with output powers in the mW range. This is the longest wavelength for DFB QCLs, and for any QCLs or semiconductor lasers in general, operating in a CW at room temperature.

Published
2019

44. Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 micron

Author

Alexei N. Baranov, Michael Bahriz, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Semiconductor laser theory, law.invention, 010309 optics, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Optics, Far infrared, law, 0103 physical sciences, Quantum well, business.industry, Doping, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Magnetic field, Cascade, Optoelectronics, Continuous wave, 0210 nano-technology, business
Abstract

International audience; We report low threshold InAs/AlSb quantum cascade lasers emitting near 15 micron. The devices are based on a vertical design similar to those employed previously in far infrared InAs-based QCLs, whereas the doping level of the active core is considerably decreased. The lasers exhibit a threshold current density as low as 730 A/cm(2) in pulsed mode at room temperature and can operate in this regime up to 410K. The continuous wave regime of operation has been achieved in these devices at temperatures up to 20 degrees C. The cw regime is demonstrated for InAs-based QCLs for the first time at room temperature.

Published
2016

45. AFM visualization of half-disk WGM laser modes

Author

Mikhail S. Dunaevskiy, Grigorii S. Sokolovskii, A. M. Monakhov, Alexei N. Baranov, Vladislav V. Dudelev, Prokhor A. Alekseev, and Roland Teissier

Subjects
010302 applied physics, Materials science, business.industry, Physics::Optics, Cleavage (crystal), 02 engineering and technology, Laser pumping, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Visualization, Optics, law, 0103 physical sciences, Microscopy, Physics::Atomic Physics, Laser power scaling, Whispering-gallery wave, 0210 nano-technology, business, Tunable laser
Abstract

By means of atomic force microscopy (AFM) the spatial mapping of the laser intensity was performed on the cleavage of the whispering gallery modes (WGM) half-disk laser. The study was carried out in the near- and far-field regime. It showed a strong spatial divergence of different modes in the laser.

Published
2016

46. Laser interference lithography for the collective fabrication of quartz-microcylinders

Author

Francesco Pedaci, Afaf Meghit, Roland Teissier, Z. Santybayeva, Frederic Pichot, C. de Marin, Benoit Charlot, Centre de Biochimie Structurale [Montpellier] (CBS), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Institut National de la Santé et de la Recherche Médicale (INSERM), Information et Édition Scientifiques (IES), Inria Siège, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Matériaux, MicroCapteurs et Acoustique (M2A), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Direction de la Culture et de l’Information Scientifiques (DCIS), and Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-Inria Siège

Subjects
0301 basic medicine, Materials science, Birefringence, Fabrication, [SDV.BIO]Life Sciences [q-bio]/Biotechnology, business.industry, Torque wrench, Physics::Optics, Rotation, Interference lithography, 03 medical and health sciences, Surface micromachining, 030104 developmental biology, Optics, Optical tweezers, Torque, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

The use of optical tweezers and spin angular momentum transfer to birefringent particles allows new nano-scale mechanical measurements in systems where torque and rotation are relevant parameters. There is a growing interest in developing simple, fast and inexpensive protocols to produce a large number of sub-micron scale cylinders of quartz, a positive uniaxial birefringent crystal, to be employed for such angular measurements in optical tweezers. Here we present a novel method based on laser interference lithography that fulfills these requirements, producing arrays of quartz cylindrical particles over several cm2 surface with an efficient microfabrciation process. These particles were successfully used to apply and measure optical torque in an optical torque wrench.

Published
2016

47. Apertureless SPM method of light detection

Author

A. Dontsov, Philippe Girard, Prokhor A. Alekseev, Alexei N. Baranov, Roland Teissier, A. M. Monakhov, Richard Arinero, Mikhail S. Dunaevskiy, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Microscope, Infrared, Astrophysics::Cosmology and Extragalactic Astrophysics, 02 engineering and technology, 01 natural sciences, Electromagnetic radiation, law.invention, Scanning probe microscopy, Optics, law, 0103 physical sciences, Mechanical resonance, Astrophysics::Galaxy Astrophysics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Resonance, 021001 nanoscience & nanotechnology, Laser, Optoelectronics, Astrophysics::Earth and Planetary Astrophysics, 0210 nano-technology, business, Lasing threshold
Abstract

We demonstrate the effect of infrared (IR) illumination on mechanical resonance frequency of scanning probe microscope (SPM) probe. The analytical estimations permit to relate the observed effect with the SPM-probe heating by IR-radiation. This effect can be used for the SPM mapping of IR-radiation spatial distribution on the emitting surfaces. The proposed method demonstrates high sensitivity to the infrared radiation and lateral resolution in the sub-micron range. It was applied to visualize complex spatial structure of lasing modes on the mirror of whispering-gallery mode GaSb/GaAlAsSb/GaInAsSb laser.

Published
2016

48. Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

Author

Christophe Gatel, Julien Nicolai, Anne Ponchet, Alexei N. Baranov, Bénédicte Warot-Fonrose, César Magén, Roland Teissier, Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), University of Zaragoza - Universidad de Zaragoza [Zaragoza], ANR-11-BS10-0017,NAIADE,Nanocaractérisation et modélisation d'Antimoniures d'éléments III : Interfaces et Analyse des Déformations d'Epitaxie(2011), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Dark field microscopy, [SPI.TRON]Engineering Sciences [physics]/Electronics, Transmission electron microscopy, 0103 physical sciences, Microscopy, Scanning transmission electron microscopy, 0210 nano-technology, High-resolution transmission electron microscopy, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract

InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.

Published
2016

49. Quantum Cascade Lasers in the InAs/AlSb Material System

Author

Alexei N. Baranov, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, Laser, 7. Clean energy, Atomic and Molecular Physics, and Optics, Band offset, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, Wavelength, [SPI]Engineering Sciences [physics], Optics, Effective mass (solid-state physics), Semiconductor, law, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Quantum cascade laser, Photonic crystal
Abstract

International audience; We review the current state of the InAs/AlSb quantum cascade laser (QCL) technology. These materials have brought significant progress in short wavelength QCL due to the high-conduction band offset. The first QCLs emitting below 3 mu m have been demonstrated in this system. The short wavelength limit of QCL operation has further been moved down to 2.6 mu m. This system is also well suited for far-infrared QCLs because high intersubband gain can be achieved at low transition energies due to the small electron effective mass in InAs. Room temperature operation has been demonstrated in InAs-based QCLs to a wavelength of 21 mu m, for the first time for any semiconductor laser emitting above 16 mu m. Both short-and long-wavelength single-frequency distributed feedback InAs/AlSb QCLs have been realized, as well as widely tunable external cavity sources for the 3-3.5 mu m spectral range.

Published
2015

50. Ray interference in tunable whispering gallery mode semiconductor laser

Author

Yu. P. Yakovlev, V. V. Sherstnev, Andrey N. Baranov, A. I. Dershevich, Guilhem Boissier, A. N. Imenkov, and Roland Teissier

Subjects
Physics, Physics and Astronomy (miscellaneous), business.industry, Near and far field, Directivity pattern, Radiation, Laser, law.invention, Optics, Semiconductor, Interference (communication), law, Optoelectronics, Whispering-gallery wave, business, Diode
Abstract

We have observed the interference of rays in a whispering gallery mode (WGM) semiconductor diode laser with a half-disk cavity. The interference leads to the formation of about 20 lobes in the radiation directivity pattern in the far field zone. Each of these lobes consists of even narrower components. It is established that the number of narrow lobes is determined by the coherent counterphase rays originating from peripheral points of the half-disk cavity mirror. The wide lobes are related to adjacent coherent radiation sources, the presence of which is confirmed by the near field pattern.

Published
2009

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