1. Angstrom-scale ion-beam engineering of ultrathin buried oxides for quantum and neuro-inspired computing
- Author
-
Smirnov, N., Krivko, E., Moskaleva, D., Moskalev, D., Solovieva, A., Echeistov, V., Zikiy, E., Korshakov, N., Ivanov, A., Malevannaya, E., Matanin, A., Polozov, V., Teleganov, M., Zhitkov, N., Romashkin, R., Korobenko, I., Yanilkin, A., Lebedev, A., Ryzhikov, I., Andriyash, A., and Rodionov, I.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Materials Science ,Physics - Applied Physics ,Quantum Physics - Abstract
Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing. Still, an ultrathin layer control at angstrom scale is challenging for cutting-edge applications. Here we introduce a scalable approach utilizing focused ion-beam annealing for buried ultrathin oxides engineering with angstrom-scale thickness control. Our molecular dynamics simulations of Ne+ irradiation on Al/a-AlOx/Al structure confirms the pivotal role of ion generated crystal defects. We experimentally demonstrate its performance on Josephson junction tunning in the resistance range of 2 to 37% with a standard deviation of 0.86% across 25x25 mm chip. Moreover, we showcase +-17 MHz frequency control (+-0.172 A tunnel barrier thickness) for superconducting transmon qubits with coherence times up to 500 us, which is promising for useful fault-tolerant quantum computing. This work ensures ultrathin multilayer nanosystems engineering at the ultimate scale by depth-controlled crystal defects generation.
- Published
- 2024