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Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we employ molecular beam epitaxy to grow a 1T-CrTe2 layer, a two-dimensional ferromagnet with Curie temperature up to room temperature, on a FeTe layer. These 1T-CrTe2/FeTe heterostructures show superconductivity with a critical temperature of ~12 K. Through magnetic force microscopy measurements, we observe the Meissner effect on the surface of the 1T-CrTe2 layer. Our electrical transport measurements reveal that the 1T-CrTe2/FeTe heterostructures exhibit nonreciprocal charge transport behavior, characterized by a large magneto-chiral anisotropy coefficient. The enhanced nonreciprocal charge transport in 1T-CrTe2/FeTe heterostructures provides a promising platform for exploring the magnetically controllable superconducting diode effect., Comment: 24 pages, 4 figures, comments are welcome

Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $\Gamma$. Here, we present a controlled methodology to gradually remove Se atoms from the surface Se-Bi-Se-Bi-Se quintuple layers, eventually forming bilayer-Bi on top of the quintuple bulk. Our method allows us to track the topological surface state and confirm its robustness throughout the surface modification. Importantly, we report a relocation of the topological Dirac cone in both real space and momentum space, as the top surface layer transitions from quintuple Se-Bi-Se-Bi-Se to bilayer-Bi. Additionally, charge transfer among different surface layers is identified. Our study provides a precise method to manipulate surface configurations, allowing for the fine-tuning of the topological surface states in Bi$_2$Se$_3$, which represents a significant advancement towards nano-engineering of topological states., Comment: 21 pages, 5 figures, accepted for publication in Nano Letters

In van der Waals heterostructures (vdWHs), the manipulation of interlayer stacking/coupling allows for the construction of customizable quantum systems exhibiting exotic physics. An illustrative example is the diverse range of states of matter achieved through varying the proximity coupling between two-dimensional (2D) quantum spin liquid (QSL) and superconductors within the TaS2 family. This study presents a demonstration of the intertwined physics of spontaneous rotational symmetry breaking, hidden magnetism, and Ising superconductivity in the three-fold rotationally symmetric, non-magnetic natural vdWHs 6R-TaS2. A distinctive phase emerges in 6R-TaS2 below a characteristic temperature (T*) of approximately 30 K, which is characterized by a remarkable set of features, including a giant extrinsic anomalous Hall effect (AHE), Kondo screening, magnetic field-tunable thermal hysteresis, and nematic magneto-resistance. At lower temperatures, a coexistence of nematicity and Kondo screening with Ising superconductivity is observed, providing compelling evidence of hidden magnetism within a superconductor. This research not only sheds light on unexpected emergent physics resulting from the coupling of itinerant electrons and localized/correlated electrons in natural vdWHs but also emphasizes the potential for tailoring exotic quantum states through the manipulation of interlayer interactions., Comment: 16 pages, 4 figures

In high temperature cuprate superconductors, it was found that in the overdoped region the superfluid density decreases with the increase of hole doping. One natural question is whether there exists normal fluid in the superconducting state in the overdoped region. In this paper, we have carried out high-resolution ultra-low temperature laser-based angle-resolved photoemission measurements on a heavily overdoped Bi2212 sample with a $T_{\mathrm{c}}$ of 48 K. We find that this heavily overdoped Bi2212 remains in the strong coupling regime with $2 \mathit{\Delta}_0 / k_{\mathrm{B}} T_{\mathrm{c}}=5.8$. The single-particle scattering rate is very small along the nodal direction ($\sim$5 meV) and increases as the momentum moves from the nodal to the antinodal regions. A hard superconducting gap opening is observed near the antinodal region with the spectral weight at the Fermi level fully suppressed to zero. The normal fluid is found to be negligibly small in the superconducting state of this heavily overdoped Bi2212. These results provide key information to understand the high $T_\mathrm{c}$ mechanism in the cuprate superconductors., Comment: 13 pages, 4 figures

The discovery of the topological states has become a key topic in condensed matter physics with the focus evolving from the Dirac or Weyl points to high-dimension topological states of the nodal lines and nodal surfaces. For a topological material to manifest its quantum properties and become useful in applications, the topological states need to be genuine and clean so that they lie close to the Fermi level without other trivial bands existing at the Fermi level. While a number of high-dimension topological materials are predicted, only a few of them have been synthesized and confirmed and the genuine and clean ones are especially scarce. Here we report the realization of the genuine clean multiple high-dimension topological states in NaAlSi. By performing high-resolution angle-resolved photoemission measurements and band structure calculations, we have observed two sets of nodal surfaces and the formation of two homocentric nodal ring states in NaAlSi. The observed nodal rings are distinct in that the inner one is a type-{\uppercase\expandafter{\romannumeral1}} nodal ring while the outer one is a type-{\uppercase\expandafter{\romannumeral1}} nodal ring embedded with four type-{\uppercase\expandafter{\romannumeral3}} nodal points. All the bands involved in the nodal rings lie very close to the Fermi level with no other trivial bands coexisting at the Fermi level. These observations make NaAlSi a desirable topological material to explore for novel quantum states and exotic properties.

Topological states of matter possess bulk electronic structures categorized by topological invariants and edge/surface states due to the bulk-boundary correspondence. Topological materials hold great potential in the development of dissipationless spintronics, information storage, and quantum computation, particularly if combined with magnetic order intrinsically or extrinsically. Here, we review the recent progress in the exploration of intrinsic magnetic topological materials, including but not limited to magnetic topological insulators, magnetic topological metals, and magnetic Weyl semimetals. We pay special attention to their characteristic band features such as the gap of topological surface state, gapped Dirac cone induced by magnetization (either bulk or surface), Weyl nodal point/line, and Fermi arc, as well as the exotic transport responses resulting from such band features. We conclude with a brief envision for experimental explorations of new physics or effects by incorporating other orders in intrinsic magnetic topological materials., Comment: 32 pages, 15 figures

The origin of the high temperature superconductivity in the iron-based superconductors remains elusive after being extensively studied for more than a decade. Determination of the pairing symmetry is essential in understanding the superconductivity mechanism. In the iron-based superconductors that have hole pockets around the Brillouin zone center and electron pockets around the zone corners, the pairing symmetry is generally considered to be s$_\pm$, endowing a sign change in the superconducting gap between the hole and electron pockets. For the iron-based superconductors with only hole pockets, however, a couple of pairing scenarios have been proposed but the exact symmetry is still highly controversial. Here we report our determination of the pairing symmetry in KFe$_2$As$_2$ which is a prototypical iron-based superconductor with hole pockets both around the zone center and around the zone corners. By taking laser-based angle resolved photoemission measurements with super-high resolution and at ultra-low temperature, we have precisely determined the superconducting gap distribution and identified the locations of the gap nodes on all the Fermi surface around the zone center and the zone corners. The complete superconducting gap structure, in combination with the observation of the spin resonance in neutron scattering, provides strong evidence on the s$_\pm$ pairing symmetry in KFe$_2$As$_2$ with a gap sign reversal between the hole pockets around the zone center and the hole pockets around the zone corners. These results unify the pairing symmetry in the hole-doped iron-based superconductors and point to the spin fluctuation as the pairing glue in generating superconductivity.

We review recent progress in the electronic structure study of intrinsic magnetic topological insulators (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ ($n=0,1,2,3$) family. Specifically, we focus on the ubiquitously (nearly) gapless behavior of the topological surface state Dirac cone observed by photoemission spectroscopy, even though a large Dirac gap is expected because of surface ferromagnetic order. The dichotomy between experiment and theory concerning this gap behavior is perhaps the most critical and puzzling question in this frontier. We discuss various proposals accounting for the lack of magnetic effect on the topological surface state Dirac cone, which are mainly categorized into two pictures, magnetic reconfiguration, and topological surface state redistribution. Band engineering towards opening a magnetic gap of topological surface states provides great opportunities to realize quantized topological transport and axion electrodynamics at higher temperatures.

We report successful growth of millimeter-sized high quality single crystals of V$_3$S$_4$, a candidate topological semimetal belonging to a low-symmetry space group and consisting of only low atomic number elements. Using density functional theory calculations and angle-resolved photoemission spectroscopy, we show that the nonmagnetic phase of monoclinic V$_3$S$_4$ hosts type-II Dirac-like quasiparticles which opens a sizable gap due to spin orbit coupling, as well as theoretical multiple nodal lines that are eliminated also by spin orbit coupling. These results suggest that relativistic effects give rise to profound modifications of the topological properties even in compounds with low-weight elements., Comment: 19 Pages, 3 Figures. To be published in Journal of Alloys and Compounds

Space groups describing the symmetry of lattice structure allow the emergence of fermionic quasiparticles with various degeneracy in the band structure. Theoretical efforts have predicted many materials hosting fermions with the highest degeneracy, i.e., eightfold fermions, yet lacking experimental realization. Here, we explore the band degeneracies in TaCo$_2$Te$_2$ crystals. Through systematic experimental and theoretical analyses, we establish TaCo$_2$Te$_2$ as a nonsymmorphic crystal with negligible spin-orbit coupling (SOC) and long-range magnetic order. These critical properties guarantee the first realization of practical eightfold fermions and fourfold van Hove singularity, as directly observed by photoemission spectroscopy. TaCo$_2$Te$_2$ serves as a topological quantum critical platform, which can be tuned into various magnetic, topologically trivial, and nontrivial phases by adding strain, magnetic field, or SOC. The latter is demonstrated by our first-principles calculations, which show that enhancing SOC in TaCo$_2$Te$_2$ will promote the experimental observation of bulk hourglass fermions. Our results establish TaCo$_2$Te$_2$ as a unique platform to explore states of matter intertwining magnetism, correlation, symmetry, and band topology.

High resolution angle resolved photoemission measurements and band structure calculations are carried out to study the electronic structure of BaMnSb$_2$. All the observed bands are nearly linear that extend to a wide energy range. The measured Fermi surface mainly consists of one hole pocket around $\Gamma$ and a strong spot at Y which are formed from the crossing points of the linear bands. The measured electronic structure of BaMnSb$_2$ is unusual and deviates strongly from the band structure calculations. These results will stimulate further efforts to theoretically understand the electronic structure of BaMnSb$_2$ and search for novel properties in this Dirac material., Comment: 14 pages, 5 figures

We have carried out detailed high resolution ARPES measurements and band structure calculations to study the electronic structure of CaMnSb$_{2}$. The observed Fermi surface mainly consists of one hole pocket around ${\Gamma}$ point and one tiny hole pocket at Y point. Strong spectral weight accumulation along the ${\Gamma}$-X direction is observed on the hole-like Fermi surface around ${\Gamma}$ point, suggesting strong anisotropy of the density of states along the Fermi surface. The tiny hole pocket at Y point originates from an anisotropic Dirac-like band with the crossing point of the linear bands lying $\sim$ 10 meV above the Fermi level. These observations are in a good agreement with the band structure calculations. In addition, we observe additional features along the ${\Gamma}$-Y line that cannot be accounted for by the band structure calculations. Our results provide important information in understanding and exploration of novel properties in CaMnSb$_{2}$ and related materials.

High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity., Comment: 23 pages, 5 figures

Single-layer FeSe films grown on the SrTiO3 substrate (FeSe/STO) have attracted much attention because of their possible record-high superconducting critical temperature Tc and distinct electronic structures in iron-based superconductors. However, it has been under debate on how high its Tc can really reach due to the inconsistency of the results obtained from the transport, magnetic and spectroscopic measurements. Here we report spectroscopic evidence of superconductivity pairing at 83 K in single-layer FeSe/STO films. By preparing high-quality single-layer FeSe/STO films, we observe for the first time strong superconductivity-induced Bogoliubov back-bending bands that extend to rather high binding energy ~100 meV by high-resolution angle-resolved photoemission measurements. The Bogoliubov back-bending band provides a new definitive benchmark of superconductivity pairing that is directly observed up to 83 K in the single-layer FeSe/STO films. Moreover, we find that the superconductivity pairing state can be further divided into two temperature regions of 64-83 K and below 64 K. We propose the 64-83 K region may be attributed to superconductivity fluctuation while the region below 64 K corresponds to the realization of long-range superconducting phase coherence. These results indicate that either Tc as high as 83 K is achievable in iron-based superconductors, or there is a pseudogap formation from superconductivity fluctuation in single-layer FeSe/STO films.

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories., Comment: 17 pages, 5 figures

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2., Comment: 12 pages, 4 figures

The monolayer WSe2 is interesting and important for future application in nanoelectronics, spintronics and valleytronics devices, because it has the largest spin splitting and longest valley coherence time among all the known monolayer transition-metal dichalcogenides (TMDs). To obtain the large-area monolayer TMDs' crystal is the first step to manufacture scalable and high-performance electronic devices. In this letter, we have successfully fabricated millimeter-sized monolayer WSe2 single crystals with very high quality, based on our improved mechanical exfoliation method. With such superior samples, using standard high resolution angle-resolved photoemission spectroscopy, we did comprehensive electronic band structure measurements on our monolayer WSe2. The overall band features point it to be a 1.2eV direct band gap semiconductor. Its spin-splitting of the valence band at K point is found as 460 meV, which is 30 meV less than the corresponding band splitting in its bulk counterpart. The effective hole masses of valence bands are determined as 2.344 me at Gamma, and 0.529 me as well as 0.532 me at K for the upper and lower branch of splitting bands, respectively. And screening effect from substrate is shown to substantially impact on the electronic properties. Our results provide important insights into band structure engineering in monolayer TMDs. Our monolayer WSe2 crystals may constitute a valuable device platform., Comment: 21 pages, 5 figures, accepted by Nano Research

High-resolution laser-based angle-resolved photoemission measurements have been carried out on Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) and Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ (Bi2201) superconductors. Unexpected hybridization between the main band and the superstructure band in Bi2212 is clearly revealed. In the momentum space where one main Fermi surface intersects with one superstructure Fermi surface, four bands are observed instead of two. The hybridization exists in both superconducting state and normal state, and in Bi2212 samples with different doping levels. Such a hybridization is not observed in Bi2201. This phenomenon can be understood by considering the bilayer splitting in Bi2212, the selective hybridization of two bands with peculiar combinations, and the altered matrix element effects of the hybridized bands. These observations provide strong evidence on the origin of the superstructure band which is intrinsic to the CuO$_2$ planes. Therefore, understanding physical properties and superconductivity mechanism in Bi2212 should consider the complete Fermi surface topology which involves the main bands, the superstructure bands and their interactions., Comment: 20 pages, 4 figures

High-quality Bi$_{2-x}$Pb$_{x}$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) single crystals have been successfully grown by the traveling solvent floating zone technique with a wide range of Pb substitution ($x=0-0.8$). The samples are characterized by transmission electron microscope (TEM) and measured by high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) with different photon energies. A systematic evolution of the electronic structure and superstructure with Pb substitution has been revealed for the first time. The superstructure shows a significant change with Pb substitution and the incommensurate modulation vector ($\textbf{Q}$) decreases with increasing Pb substitution. In the meantime, the superstructure intensity from ARPES measurements also decreases dramatically with increasing Pb concentration. The superstructure in Bi2212 can be effectively suppressed by Pb substitution and it nearly disappears with a Pb substitution of $x=0.8$. We also find that the superstructure bands in ARPES measurements depend sensitively on the photon energy of lasers used; they can become even stronger than the main band when using a laser photon energy of 10.897 eV. These results provide important information on the origin of the incommensurate superstructure and its control and suppression in bismuth-based high temperature superconductors.

By partially doping Pb to effectively suppress the superstructure in single-layered cuprate Bi2Sr2CuO6+{\delta}(Pb-Bi2201) and annealing them in vacuum or in high pressure oxygen atmosphere, a series of high quality Pb-Bi2201 single crystals are obtained with Tc covering from 17 K to non-supercondcuting in the overdoped region. High resolution angle resolved photoemission spectroscopy (ARPES) measurements are carried out on these samples to investigate the evolution of the Fermi surface topology with doping in the normal state. Clear and complete Fermi surface are observed and quantitatively analyzed in all these overdoped Pb-Bi2201 samples. A Lifshitz transition from hole-like Fermi surface to electron like Fermi surface with increasing doping is observed at a doping level of ~0.35. This transition coincides with the change that the sample undergoes from superconducting to non-superconducting states. Our results reveal the emergence of an electron-like Fermi surface and the existence of a Lifshitz transition in heavily overdoped Bi2201 samples. They provide important information in understanding the connection between the disappearance of superconductivity and the Lifshitz transition in the overdoped region., Comment: 16 Pages of Text plus Figures