34 results on '"Ronningen, T. J."'
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2. Simulation of Impact Ionization Coefficients in InAlAs/InAsSb Type-II Superlattice Material Systems
3. Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate
4. Very high gain and low noise GaAsSb/AlGaAsSb avalanche photodiodes for 1550nm detection at room temperature
5. Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate
6. Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance
7. High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes
8. Suppressing leakage current by interfacial engineering for highly sensitive, broadband, self-powered FACsPbI3 perovskite photodetectors.
9. Determination of the background doping polarity for unintentionally doped AlGaAsSb and AlInAsSb avalanche photodiodes on InP substrates
10. Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates
11. Summary of Progress at the NSF NeXUS Facility at the Ohio State University
12. Material optimization for extended short-wavelength and mid-wavelength infrared avalanche photodiodes
13. Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26
14. Investigating the physics of higher-order optical transitions in InAs/GaSb superlattices
15. AlInAsSb avalanche photodiodes on InP substrates
16. Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates
17. Open-circuit voltage photodetector architecture for infrared imagers
18. Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates
19. Determination of background doping polarity of unintentionally doped semiconductor layers
20. Investigation of carrier localization in InAs/AlSb type-II superlattice material system
21. Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26.
22. Determination of doping polarity of unintentionally doped antimonide avalanche photodiodes on InP substrate
23. Low noise AlInAsSb avalanche photodiodes on InP substrates for 1.55 µm infrared applications
24. Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure
25. InAs/AlSb type II superlattice avalanche photodiodes.
26. Material optimization for extended short-wavelength and mid-wavelength infrared avalanche photodiodes.
27. InAs/AlSb type II superlattice avalanche photodiodes
28. Determination of doping polarity of unintentionally doped antimonide avalanche photodiodes on InP substrate.
29. Terahertz spectral signatures of explosive materials and precursors
30. From the Chair.
31. Chair’s Note.
32. Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate.
33. Chair's Statement.
34. Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26.
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