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Doping impurity atoms is a strategy commonly used to tune the functionality of materials including catalysts, semiconductors, and quantum emitters. The location of dopants and their interaction with surrounding atoms could significantly modulate the transport, optical, or magnetic properties of materials. However, directly imaging individual impurity atoms inside materials remains a generally unaddressed need. Here, we demonstrate how single atoms can be detected and located in three dimensions via multislice electron ptychography.Interstitial atoms in a complex garnet oxide heterostructure are resolved with a depth resolution better than 2.7 nm, together with a deep-sub-{\AA}ngstrom lateral resolution. Single-scan atomic-layer depth resolution should be possible using strongly divergent electron probe illumination. Our results provide a new approach to detecting individual atomic defects and open doors to characterize the local environments and spatial distributions that underlie a broad range of systems such as single-atom catalysts, nitrogen-vacancy centers, and other atomic-scale quantum sensors., Comment: 28 pages, 5 figures, 10 supplementary figures

The magnon propagation length ($\langle\xi\rangle$) of a ferro/ferrimagnet (FM) is one of the key factors that controls the generation and propagation of thermally-driven spin current in FM/heavy metal (HM) bilayer based spincaloritronic devices. Theory predicts that for the FM layer, $\langle\xi\rangle$ is inversely proportional to the Gilbert damping ($\alpha$) and the square root of the effective magnetic anisotropy constant ($K_{\rm eff}$). However, direct experimental evidence of this relationship is lacking. To experimentally confirm this prediction, we employ a combination of longitudinal spin Seebeck effect (LSSE), transverse susceptibility, and ferromagnetic resonance experiments to investigate the temperature evolution of $\langle\xi\rangle$ and establish its correlation with the effective magnetic anisotropy field, $H_K^{\rm eff}$ ($\propto K_{\rm eff}$) and $\alpha$ in Tm$_3$Fe$_5$O$_{12}$ (TmIG)/Pt bilayers. We observe concurrent drops in the LSSE voltage and $\langle\xi\rangle$ below 200$^\circ$K in TmIG/Pt bilayers regardless of TmIG film thickness and substrate choice and attribute it to the noticeable increases in $H_K^{\rm eff}$ and $\alpha$ that occur within the same temperature range. From the TmIG thickness dependence of the LSSE voltage, we determined the temperature dependence of $\langle\xi\rangle$ and highlighted its correlation with the temperature-dependent $H_K^{\rm eff}$ and $\alpha$ in TmIG/Pt bilayers, which will be beneficial for the development of rare-earth iron garnet-based efficient spincaloritronic nanodevices., Comment: 10 main text figures

Ferroics based on transition-metal (TM) substituted SrTiO$_{3}$ have called much attention as magnetism and/or ferroelectricity can be tuned by using cations substitution and defects, strain and/or oxygen deficiency. C. A. Ross et al. [Phys. Rev. Applied 7, 024006 (2017)] demonstrated the SrTi$_{1-x}$Fe$_{x}$O$_{3-\delta}$ (STF) magnetization behavior for different deposition oxygen-pressures, substrates and magnetic fields. The relation between oxygen deficiency and ferroic orders is yet to be well understood, for which the full potential of oxygen-stoichiometry engineered materials remain an open question. Here, we use hybrid-DFT to calculate different oxygen vacancy ($v_{o}$) states in STF with a variety of TM distributions. The resulting cations' magnetic states and alignments associated to the $v_{o}$ ground-states for $x=\{0.125,0.25\}$ are used within a Monte Carlo scope for collinear magnetism to simulate the spontaneous magnetization. Our model captures several experimental STF features i.e., display a maximum of the magnetization at intermediate number of vacancies, a monotonous quenching from $\sim{0.35}\mu{_{B}}$ for small ${\delta}$, and a slower decreasing of such saturation for larger number of vacancies. Moreover, our approach gives a further insight into the relations between defects stabilization and magnetization, vacancy density and the oxygen pressure required to maximize such ferroic order, and sets guidelines for future Machine Learning based computational synthesis of multiferroic oxides.

Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain walls (DW) can modulate spin-wave transport in perpendicularly magnetized channels of Bi-doped yttrium-iron-garnet (BiYIG). Conversely, we demonstrate that the magnon spin current can drive DW motion in the BiYIG channel device by means of magnon spin-transfer torque. The DW can be reliably moved over 15 um distances at zero applied magnetic field by a magnon spin current excited by an RF pulse as short as 1 ns. The required energy for driving DW motion is orders of magnitude smaller than those reported for metallic systems. These results facilitate low-switching-energy magnonic devices and circuits where magnetic domains can be efficiently reconfigured by magnon spin currents flowing within magnetic channels., Comment: 17 pages

Magnetic patterns can be controlled globally using fields or spin polarized currents. In contrast, the local control of the magnetization on the nanometer length scale remains challenging. Here, we demonstrate how magnetic domain patterns in a Tm-doped yttrium iron garnet (Tm:YIG) thin film with perpendicular magnetic anisotropy can be permanently and locally imprinted by high intensity photon pulses of a hard x-ray transient grating (XTG). Micromagnetic simulations provide a qualitative understanding of the observed changes in the orientation of magnetic domains in Tm:YIG and XTG-induced changes. The presented results offer a route for the local manipulation of the magnetic state using hard XTG., Comment: 15 pages, 3 figures

We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) to corresponding electrically-driven transverse resistances at and above room temperature. We find for Tm3Fe5O12/W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm3Fe5O12/Pt the ratio of the electrically-driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. We ascribe this difference to a proximity-induced magnetic layer at the Tm3Fe5O12/Pt interface.

YFeO$_3$ thin films are a recent addition to the family of multiferroic orthoferrites where Y\textsubscript{Fe} antisite defects and strain have been shown to introduce polar displacements while retaining magnetic properties. Complete control of the multiferroic properties, however, necessitates knowledge of the defects present and their potential role in modifying behavior. Here, we report the structure and chemistry of antiphase boundaries in multiferroic YFeO$_3$ thin films using aberration corrected scanning transmission electron microscopy combined with atomic resolution energy dispersive X-ray spectroscopy. We find that Fe\textsubscript{Y} antisites, which are not stable in the film bulk, periodically arrange along antiphase boundaries due to changes in the local environment. Using density functional theory, we show that the antiphase boundaries are polar and bi-stable, where the presence of Fe\textsubscript{Y} antisites significantly decreases the switching barrier. These results highlight how planar defects, such as antiphase boundaries, can stabilize point defects that would otherwise not be expected to form within the structure.

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO3, a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of YFe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Furthermore, a vertically aligned nanocomposite consisting of pillars of a magnetoelastic oxide CoFe2O4 embedded epitaxially in the YFeO3 matrix exhibits both robust ferroelectricity and ferrimagnetism at room temperature, as well as a noticeable strain-mediated magnetoelectric coupling effect. Our work uncovers the distinctive role of antisite defects in providing a novel mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.

We present measurements of the Faraday effect in n-type InSb. The Verdet coefficient was determined for a range of carrier concentrations near $10^{17}$ $\text{cm}^{-3}$ in the $\lambda$ = 8 $\mu$m - 12 $\mu$m long-wave infrared regime. The absorption coefficient was measured and a figure of merit calculated for each sample. From these measurements, we calculated the carrier effective mass and illustrate the variation of the figure of merit with wavelength. A method for creating a tunable bandpass filter via the Faraday rotation is discussed along with preliminary results from a prototype device., Comment: 14 pages, 14 figures

Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is < 16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons., Comment: 24 pages, 5 figures

An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the domain wall are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy efficient voltage controlled nanomagnetic deep neural networks that can learn in real time.

Room temperature ferromagnetism was characterized for thin films of SrTi$_{0.6}$Fe$_{0.4}$O$_{3-{\delta}}$ grown by pulsed laser deposition on SrTiO$_{3}$ and Si substrates under different oxygen pressures and after annealing under oxygen and vacuum conditions. X-ray magnetic circular dichroism demonstrated that the magnetization originated from Fe$^{2+}$ cations, whereas Fe$^{3+}$ and Ti$^{4+}$ did not contribute. Films with the highest magnetic moment (0.8 {\mu}B per Fe) had the highest measured Fe$^{2+}$:Fe${^3+}$ ratio of 0.1 corresponding to the largest concentration of oxygen vacancies ({\delta} = 0.19). Post-growth annealing treatments under oxidizing and reducing conditions demonstrated quenching and partial recovery of magnetism respectively, and a change in Fe valence states. The study elucidates the microscopic origin of magnetism in highly Fe-substituted SrTi$_{1-x}$Fe$_x$O$_{3-{\delta}}$ perovskite oxides and demonstrates that the magnetic moment, which correlates with the relative content of Fe$^{2+}$ and Fe$^{3+}$, can be controlled via the oxygen content, either during growth or by post-growth annealing.

Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all these requirements. In this article we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high performance optical isolators on chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices.

Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare earth-transition metal alloy bilayers, we experimentally studied current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum close to the angular momentum compensation. With experiment and modelling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy metal/ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices., Comment: 13 pages, 3 figures

The spin chemical potential characterizes the tendency of spins to diffuse. Probing the spin chemical potential could provide insight into materials such as magnetic insulators and spin liquids and aid optimization of spintronic devices. Here, we introduce single-spin magnetometry as a generic platform for non-perturbative, nanoscale characterization of spin chemical potentials. We use this platform to investigate magnons in a magnetic insulator, surprisingly finding that the magnon chemical potential can be efficiently controlled by driving the system's ferromagnetic resonance. We introduce a symmetry-based two-fluid theory describing the underlying magnon processes, realize the first experimental determination of the local thermomagnonic torque, and illustrate the detection sensitivity using electrically controlled spin injection. Our results open the way for nanoscale control and imaging of spin transport in mesoscopic spin systems., Comment: 18 pages, 4 figures

The temporal evolution of pulsed Spin Hall Effect - Spin Transfer Torque (SHE-STT) driven auto-oscillations in a Yttrium Iron Garnet (YIG) / platinum (Pt) microdisc is studied experimentally using time-resolved Brillouin Light Scattering (BLS) spectroscopy. It is demonstrated that the frequency of the auto-oscillations is different in the center and at the edge of the investigated disc that is related to the simultaneous STT excitation of a bullet and a non-localized spin-wave mode. Furthermore, the magnetization precession intensity is found to saturate on a time scale of 20 ns or longer, depending on the current density. For this reason, our findings suggest that a proper ratio between the current and the pulse duration is of crucial importance for future STT-based devices., Comment: 4 pages, 3 figures

An out-of-plane Oersted field produced from a current-carrying Au wire is used to induce local domain formation in wires made from [Co/Pd]15 multilayers with perpendicular anisotropy. A 100 ns pulsed current of 56-110 mA injected into the Au wire created a reverse domain size of 120-290 nm in a Co/Pd nanowire on one side of the Au wire. A Biot-Savart model was used to estimate the position dependence of the Oersted field around the Au wire. The shape, size and location of the reversed region of Co/Pd was consistent with the magnitude of the Oersted field and the switching field distribution of the unpatterned film. A current density of 6.2 x 10^11 A m-2 in the Co/Pd nanowire did not translate the domain walls due to low spin transfer efficiency, but the Joule heating promoted domain growth in a field below the coercive field.

Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Neel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ~75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the domains along the nanowires. These narrow wires provide model system for exploring domain wall structure and dynamics in perpendicular anisotropy systems.

Plexcitons are polaritonic modes that result from the strong coupling between excitons and plasmons. We consider plexcitons emerging from the interaction of excitons in an organic molecular layer with surface plasmons in a metallic film. We predict the emergence of Dirac cones in the two-dimensional bandstructure of plexcitons due to the inherent alignment of the excitonic transitions in the organic layer. These Dirac cones may open up in energy by simultaneously interfacing the metal with a magneto-optical layer and subjecting the whole system to a perpendicular magnetic field. The resulting energy gap becomes populated with topologically protected one-way modes which travel at the interface of this plexcitonic system. Our theoretical proposal suggests that plexcitons are a convenient and simple platform for the exploration of exotic phases of matter as well as of novel ways to direct energy flow at the nanoscale.

Thickness modulation at the edges of nanostructured magnetic thin films is shown to have important effects on their perpendicular magnetic anisotropy. Thin film wires with tapered edges were made from [Co/Pd]20 multilayers or L10-FePt films using liftoff with a double layer resist. The effect of edge taper on the reversal process was studied using magnetic force microscopy and micromagnetic modeling. In [Co/Pd]20 the anisotropy was lower in the tapered edge regions which switched at a lower reverse field compared to the center of the wire. The L10-FePt wires showed opposite behavior with the tapered regions exhibiting higher anisotropy., Comment: 15 pages, 6 figures

The formation of 360{\deg} magnetic domain walls (360DWs) in Co and Ni80Fe20 thin film wires was demonstrated experimentally for different wire widths, by successively injecting two 180{\deg} domain walls (180DWs) into the wire. For narrow wires (less than 50 nm wide for Co), edge roughness prevented the combination of the 180DWs into a 360DW, and for wide wires (200 nm for Co) the 360DW collapsed, but over an intermediate range of wire widths, reproducible 360DW formation occurred. The annihilation and dissociation of 360DWs was demonstrated by applying a magnetic field parallel to the wire, showing that annihilation fields were several times higher than dissociation fields in agreement with micromagnetic modeling. The annihilation of a 360DW by current pulsing was demonstrated., Comment: 17 pages, 6 figures

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 K to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

We demonstrate numerically the ability to displace a magnetic domain wall by a remote spin current injection. We consider a long and narrow magnetic nanostripe with a single domain wall (DW). The spin-polarized current is injected perpendicularly to the plane of the film (CPP) through a small nanocontact which is located at certain distance from the domain wall initial position. We show theoretically that the DW motion can be initiated not only by conventional spin-transfer torque but also by indirect spin-torque, created by a remote spin-current injection and then transferred to the DW by the exchange-spring mechanism. An analytical description of this effect is proposed. This finding may lead to a solution of bottleneck problems of DW motion-based spintronic and neuromorphic devices with perpendicular spin-current injection., Comment: 6 pages, 4 figures

The observation of the spin Seebeck effect in insulators has meant a breakthrough for spin caloritronics due to the unique ability to generate pure spin currents by thermal excitations in insulating systems without moving charge carriers. Since the recent first observation, the underlying mechanism and the origin of the observed signals have been discussed highly controversially. Here we present a characteristic dependence of the longitudinal spin Seebeck effect amplitude on the thickness of the insulating ferromagnet (YIG). Our measurements show that the observed behavior cannot be explained by any effects originating from the interface, such as magnetic proximity effects in the spin detector (Pt). Comparison to theoretical calculations of thermal magnonic spin currents yields qualitative agreement for the thickness dependence resulting from the finite effective magnon propagation length so that the origin of the effect can be traced to genuine bulk magnonic spin currents ruling out parasitic interface effects., Comment: 12 pages, 6 figures