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Given a (singular, codimension 1) holomorphic foliation F on a complex projective manifold X, we study the group PsAut(X, F) of pseudo-automorphisms of X which preserve F ; more precisely, we seek sufficient conditions for a finite index subgroup of PsAut(X, F) to fix all leaves of F. It turns out that if F admits a (possibly degenerate) transverse hyperbolic structure , then the property is satisfied; furthermore, in this setting we prove that all entire curves are algebraically degenerate. We prove the same result in the more general setting of transversely projective foliations, under the additional assumptions of non-negative Kodaira dimension and that for no generically finite morphism f : X $\rightarrow$ X the foliation f*F is defined by a closed rational 1-form.

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.

We present here the first experimental study of Wigner islands formed by electrons floating over helium. Electrons are trapped electrostatically in a mesoscopic structure covered with a helium film, behaving as a quantum dot. By removing electrons one by one, we are able to find the addition spectrum, i.e. the energy required to add (or extract) one electron from the trap with occupation number $N$. Experimental addition spectra are compared with Monte Carlo simulations for the actual trap geometry, confirming the ordered state of electrons over helium in the island., Comment: 12 pages, 13 figures, draft paper

We have observed trapping of electrons in an electrostatic trap formed over the surface of liquid helium-4. These electrons are detected by a Single Electron Transistor located at the centre of the trap. We can trap any desired number of electrons between 1 and $\sim 30$. By repeatedly ($\sim 10^3-10^4$ times) putting a single electron into the trap and lowering the electrostatic barrier of the trap, we can measure the effective temperature of the electron and the time of its thermalisation after heating up by incoherent radiation., Comment: Presented at QFS06 - Kyoto, to be published in J. Low Temp. Phys., 6 pages, 3 figures