1. Influence of deep levels on the electrical transport properties of CdZnTeSe detectors
- Author
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Rejhon, M, Franc, J, Dědič, V, Pekárek, J, Roy, U N, Grill, R, and James, R B
- Subjects
Physics - Applied Physics - Abstract
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier height and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap - one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS are favorable for high electrical charge transport., Comment: 11 pages, 6 figures, 1 table
- Published
- 2018
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