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Microwave plasma chemical vapor deposition is a well-known method for low-temperature, large-area direct graphene growth on any insulating substrate without any catalysts. However, the quality has not been significantly better than other graphene synthesis methods such as thermal chemical vapor deposition, thermal decomposition of SiC

Graphene thin films synthesized directly at low temperature (550˚C) on silicon substrate by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using the cover on substrates for avoiding plasma emission ultraviolet ray’s effect during film deposition. Analytical methods such as Raman spectroscopy, Transmission electron microscopy (TEM) and Scanning electron microscopy (SEM), four-point probe method, and JASCO V-570 UV/VIS/NIR spectrophotometer were employed to characterize the properties of the graphene films. Here, we report that it is possible to grow graphene directly on the silicon substrate (without using catalyst) due to the high radical density of MW SWP CVD. Furthermore, we fabricated graphene/silicon Schottky junction solar cells with an efficiency of up to 6.39%. Compared to conventional silicon solar cells, the fabrication process is greatly simplified; just graphene is synthesized directly on n-type crystalline Si substrate at low temperate.

With a combination of outstanding properties and a wide spectrum of applications, graphene has emerged as a significant nanomaterial. However, to realize its full potential for practical applications, a number of obstacles have to be overcome, such as low-temperature, transfer-free growth on desired substrates. In most of the reports, direct graphene growth is confined to either a small area or high sheet resistance. Here, an attempt has been made to grow large-area graphene directly on insulating substrates, such as quartz and glass, using magnetron-generated microwave plasma chemical vapor deposition at a substrate temperature of 300 °C with a sheet resistance of 1.3k Ω/□ and transmittance of 80%. Graphene is characterized using Raman microscopy, atomic force microscopy, scanning electron microscopy, optical imaging, UV–vis spectroscopy, and X-ray photoelectron spectroscopy. Four-probe resistivity and Hall effect measurements were performed to investigate electronic properties. Key to this report is the use of 0.3 sccm CO2 during growth to put a control over vertical graphene growth, generally forming carbon walls, and 15–20 min of O3 treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance. This report can be helpful in growing large-area graphene directly on insulating transparent substrates at low temperatures with advanced electronic properties for applications in transparent conducting electrodes and optoelectronics.

Controlled graphene growth on a substrate without the use of catalysts is of great importance for industrial applications. Here, we report thickness-controlled graphene growth directly on a silicon substrate placed in a low-density microwave plasma environment using a laser. Graphene is relatively easy to grow in high-density plasma; however, low-density plasma lacks the sufficient energy and environment required for graphene synthesis. This study reports that laser irradiation on silicon samples in a low-density plasma region nucleates graphene, and growth is controlled with laser exposure time and power. A graphene–silicon junction is thus formed and shows an enhanced (1.7 mA) short-circuit current as compared to one grown in high-density plasma (50 μA) without the laser effects. Synthesized graphene is characterized by Raman spectroscopy, atomic force microscopy to investigate surface morphology and Hall effect measurements for electronic properties. The key aspect of this report is the use of a laser to grow graphene directly on the silicon substrate by ensuring that the bulk resistance of the silicon is unaffected by ion bombardment. Additionally, it is observed that graphene grain size varies in proportion to laser power. This report can help in the growth of large-area graphene directly on silicon or other substrates at reduced substrate temperatures with advanced electronic properties for industrial applications.

In this work, we study the role of laser irradiation in the control of the doping processing for directly grown graphene using microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD) on the glass substrates. Raman spectrum and X-ray photoelectron spectroscopy (XPS) were used to investigate the evolution of the structure of doping graphene as a function of laser irradiation. Also, the effect of laser on the morphology for doping graphene using AuCl3 was observed by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and optical microscope techniques. The gold particles were collected on graphene network wrinkles, which were resulted from laser irradiation. These gold network wrinkles were further used to enhance the electrical properties of the graphene, resulting in a significant reduction in sheet resistance and an improvement of its stability after storage in ambient air. The presented approach paves the way to design promising transparent conductive electrodes for optoelectronic devices such as light-emitting diodes (LED), photodiodes and solar cells.