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We demonstrate a strip waveguide-based LiNbO3 photonic integrated circuit fabricated with a hard mask approach. The steep sidewall configuration tight optical confinement and dispersion control while preserving ultra-low loss of <0.1 dB/cm

We demonstrate a hybrid LiNbO3-Si3N4 photonic integrated platform with propagation loss of 8.5 dB/m at wafer scale. The platform low insertion loss (4 dB) and precise lithographic control. We also demonstrate a number of applications of the platform.

We demonstrate a turn-key microcomb source based on 100 GHz Si3N4 ring microresonator. The device is fully optically and electronically integrated in a compact box, which runs by pushing one button.

We demonstrate optical frequency comb generation in hybrid high-Q optical microresonators fabricated using direct wafer bonding of photonic Damascene silicon nitride wafer with thin-film lithium niobate-on-insulator (LNOI). The devices enable direct phase control via Pockels effect.

We observe CW-driven electron-photon interaction using a fiber-integrated high-Q Si3N4 microresonator, enabled by strong resonantly enhanced coupling with the confined optical mode.

We demonstrate a turn–key microcomb source based on 100 GHz Si3N4 ring microresonator. The device is fully optically and electronically integrated in a compact box, which runs by pushing one button.

We demonstrate optical frequency comb generation in hybrid high-Q optical microresonators fabricated using direct wafer bonding of photonic Damascene silicon nitride wafer with thin-film lithium niobate-on-insulator (LNOI). The devices enable direct phase control via Pockels effect.

We demonstrate a fully packaged compact optical reference cavity based on a high-Q crystalline CaF2 microresonator. Two commercially available lasers were stabi-lized to this reference with linewidth reduction down to the sub-kHz level.

Silicon Nitride (Si3N4) photonic integrated circuits (PICs) have emerged as core technology in a variety of applications ranging from LIDAR to quantum control and computing. However, the need for high-speed, low-voltage tuning and modulation has been a long standing challenge because Si3N4 lacks electro-optic effect. In this work, we demonstrate power efficient (nW) and fast (sub-mu s) piezoelectric tuning of Si3N4 optical microring resonators by monolithically integrating Lead Zirconate Titanate (PZT) piezoMEMS actuators. We achieve, for the first time, the co-integration of PZT and thermal actuators, enabling the tuning of optical resonances over one free spectral range (FSR). The programmability is demonstrated by aligning two optical resonators fabricated on separate chips, which is the first step towards fiber-optic connected optomechanical sensors and computing networks. We further show acousto-optic modulation (AOM) of Si3N4 photonics using the High-overtone Bulk Acoustic Resonators (HBAR) excited by PZT actuators with modulation frequency up to 2 GHz.

The accessibility of solitons in driven-dissipative photonic dimers drastically varies for different supermode families. We explain the origin of this phenomenon and show its crucial influence on any soliton lattice configuration including topological arrangements. (C) 2021 The Author(S)

The analogy between molecules and coupled cavities has been pointed out in a variety of works [1] . As molecular energy surfaces, transverse modes of an integrated microresonator experience avoided mode crossings (AMXs) which perturb an ideal dispersion profile [2] . Chromatic dispersion balancing the Kerr nonliterary in such resonators can result in the generation of dissipative Kerr solitons (DKSs) [3] . Even though AMX can be employed, it remains an undesirable effect which induces a perturbation on the DKS state [2] . The possibility of DKS generation in a photonic dimer (two coupled microresonators) has been recently reported [4] . DKSs can be generated in one of the hybridized dimer supermodes: symmetric (S) and antisymmetric (AS). The linear transmission spectroscopy of the photonic dimer revealed that the AS supermode family is protected against the AMXs while the S supermode family interacts with higher-order modes stronger than expected (see Fig. 1a ), thereby disrupting the DKS generation. We term the effect of vanishing interaction between transverse modes as symmetry protection.