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Mid-infrared (MIR) plasmon-phonon features of heterostructures composing of a plasmonic anisotropic two-dimensional material (A2DM) on a hexagonal boron nitride (hBN) film are analyzed. We derive the exact dispersion relations of plasmon-phonons supported by the heterostructures and demonstrate the possibility of topological transitions of these modes within the second Reststrahlen band of hBN. The topological transitions lead to enhanced local density of plasmon-phonon states, which intensifies the spontaneous emission rate, if the thickness of the hBN layer is appropriately chosen. We also investigate a lateral junction formed by A2DM/hBN and A2DM, demonstrating that one can realize asymmetric guiding, beaming, and unidirectionality of the hybrid guided modes. Our findings demonstrate potential capabilities of the A2DM/hBN heterostructures for active tunable light–matter interactions and asymmetric in-plane polariton nanophotonics in the MIR range.

Controlling the strength of enantioselective interaction of chiral inorganic nanoparticles with circularly polarized light is an intrinsically interesting subject of contemporary nanophotonics. This interaction is relatively weak, because the chirality scale of nanoparticles is much smaller than the optical wavelength. Here we theoretically demonstrate that ion doping provides a powerful tool of engineering and enhances optical activity of semiconductor nanocrystals. We show that by carefully positioning ionic impurities inside the nanocrystals, one can maximize the rotatory strengths of intraband optical transitions, and make them 100 times larger than the typical rotatory strengths of small chiral molecules.

The recent advent of digital coding metasurfaces notably simplifies the design of functional devices, enabling one to manipulate electromagnetic waves in exotic ways using specifically arranged coding elements representing discrete phase states. Here, we propose a design of dielectric coding metasurface with diverse functionalities, which are achieved by encoding the metasurface unit cells with different coding sequences. As proofs of concept, we demonstrate the possibility of realizing five distinct functionalities for the normal incidence of plane microwaves: anomalous reflection, multibeam generation, diffuse scattering, beam focusing, and vortex beam generation. The near-field distributions and far-field scattering patterns are obtained by full-wave numerical simulations to analyze the behavior of the waves in each of the cases and illustrate our general theoretical predictions. [ABSTRACT FROM AUTHOR]

Among the transitional metal dichalcogenides (TMDCs), molybdenum disulfide (MoS2) is considered an outstanding candidate for biosensing applications due to its high absorptivity and amenability to ionic current measurements. Dielectric metasurfaces have also emerged as a powerful platform for novel optical biosensing due to their low optical losses and strong near-field enhancements. Once functionalized with TMDCs, dielectric metasurfaces can also provide strong photon–exciton interactions. Here, we theoretically integrated a single layer of MoS2 into a CMOS-compatible asymmetric dielectric metasurface composed of TiO2 meta-atoms with a broken in-plane inversion symmetry on an SiO2 substrate. We numerically show that the designed MoS2-integrated metasurface can function as a high-figure-of-merit ( FoM = 137.5   RIU − 1 ) van der Waals-based biosensor due to the support of quasi-bound states in the continuum. Moreover, owing to the critical coupling of the magnetic dipole resonances of the metasurface and the A exciton of the single layer of MoS2, one can achieve a 55 % enhanced excitonic absorption by this two-port system. Therefore, the proposed design can function as an effective biosensor and is also practical for enhanced excitonic absorption and emission applications. [ABSTRACT FROM AUTHOR]

Various methods for controlling the in-plane propagation direction and topological transitions of phonon polaritons (PhPs) in anisotropic van der Waals (vdW) materials rely on using twisted vdW bi-layers or the hybridization of anisotropic vdW materials with other functional materials such as graphene, hBN, and SiC. At the same time, visibly transparent SiC- and SiO2-based metastructures have potential to solve the problem of daytime radiative cooling. Here, as a unique method, we design a bifunctional α-MoO3-integrated SiC metasurface for effectively controlling the in-plane propagation direction of α-MoO3 PhPs. The control is enabled by a topological transition in the PhP dispersion, which is achieved by proper arrangements of the SiC meta-atoms. The proposed functionality of the designed metasurface is beneficial for the mid-infrared in-plane coupling between quantum emitters and heat management. Moreover, the α-MoO3–SiC metasurface functions as an efficient visibly transparent daytime radiative cooler. [ABSTRACT FROM AUTHOR]

Black phosphorous (BP) is a well-known two-dimensional van der Waals (vdW) material with in-plane anisotropy and remarkable electronic and optical properties. Here, we comprehensively analyze the near-field radiative heat transfer (NFRHT) between a pair of parallel non-rotated BP flakes that occurs due to the tunneling of the coupled anisotropic surface plasmon polaritons (SPPs) supported by the flakes. It is demonstrated that the covering of the BP flakes with hexagonal boron nitride (hBN) films leads to the hybridization of the BP's SPPs with the hBN's hyperbolic phonon polaritons and to the significant enhancement of the NFRHT at the hBN's epsilon-near-zero frequencies. It is also shown that the NFRHT in the BP/hBN parallel-plate structure can be actively switched between the ON and OFF states by changing the chemical potential of the BPs and that the NFRHT can be modified by altering the number of the BP layers. Finally, we replace hBN with α-MoO3 and explore how the NFRHT is spectrally and strongly modified in the BP/α-MoO3 parallel-plate structure. We believe that the proposed BP/polar-vdW-material parallel-plate structures can prove useful in the thermal management of optoelectronic devices. [ABSTRACT FROM AUTHOR]