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In this paper members of the European Platform on Smart Systems Integration (EPoSS) have collected their views on the benefits of incorporating Artificial Intelligence in future Smart devices and defined the actions required to achieve this to implement "AI at the Edge".

State-of-the-art microelectronic devices, especially power semiconductors, are usually exposed to harsh environmental conditions on the one hand, for example large temperature hubs, and to challenging application conditions on the other hand, such as pulsed current applications. Mechanical robustness and reliability have become more and more challenging in recent years. Along with a continuous shrinkage of dimensions, thin film materials are stacked and micro-structured for optimized performance of such devices. Major risks for device reliability can result from loss of adhesion at interfaces of these stacked thin films. Therefore, it is crucial for such devices to feature perfect initial adhesion of the said thin film layers, even after exposure to thermal treatment or in presence of intrinsic stress. In order to validate device robustness, the quality of interface adhesion between isolating and metallization layers should be carefully assessed. A particular focus is set on interfaces between the following, widely employed materials: Cu, Al, WTi, BPSG, SiN etc. Robustness by design at critical interfaces has relied more and more on advanced Finite Element Modelling (FEM) methods in recent years. This includes explicit modelling of adhesion and delamination. Accurate parameters that describe interfacial adhesion - critical adhesion energies in tensile and shear mode - need to be extracted by means of suitable experiments on tailored test vehicles. FEM is able in turn to verify the existing theoretical framework about extracting adhesion energies from experiments, given that the analytical models are often phenomenological and based on simplified assumptions. Experimentally, Nanoindentation on designed multi-layer thin film stacks has proven to be a suitable method to investigate inter-layer adhesion strength on test vehicle basis. We focused on layered stacks of tungsten‑titanium (WTi) and Boron-Phosphorous-Silicate Glass (BPSG) on Silicon substrates. The WTi layer exhibits compressive stress tailored by means of deposition. When an axis-symmetric conical or spherical indenter penetrates the WTi film, buckles around the indenter imprint arise upon loading and may propagate during unloading. Buckle geometry is measured by means of focused ion beam and Scanning Electron Microscopy. Afterwards the critical adhesion energies can be determined by existing analytical models. Combining experimental and simulation methods one may follow a Physics-of-Failure approach and assess the failure mechanisms related to thin film delamination and interface fracture. With experimental results on hand, we implemented an FE model of the same multi-layer system. Initiation and propagation of delamination was modeled by means of a Cohesive Zone Model (CZM) based on a cohesive surface contact approach. The model incorporates elastic-plastic deformation as well as intrinsic stresses of all layers, including the substrate. Following an inverse FEM approach, we reproduced the size of the delaminated area and load-displacement curves of the indenter by recursively readjusting Cohesive Zone parameters. The so-obtained adhesion parameters and modelling can be used elsewhere in delamination risk assessments of industrial semiconductor applications. This approach also gives insight into the accuracy of the formulae used for calculating the total energy release rate and extracting the further relevant parameters without the need to rely on phenomenological assumptions.