1. Ultrafast processes in semiconductor doped glasses
- Author
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Carlos L. Cesar, Sérgio Tsuda, Luis Carlos Barbosa, Carlos Henrique de Brito Cruz, and Ana M. de Paula
- Subjects
Absorption spectroscopy ,business.industry ,Chemistry ,Doping ,Analytical chemistry ,Physics::Optics ,General Physics and Astronomy ,Surfaces and Interfaces ,General Chemistry ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Surfaces, Coatings and Films ,symbols.namesake ,Semiconductor ,Stark effect ,Quantum dot ,Excited state ,Femtosecond ,symbols ,Atomic physics ,business ,Ultrashort pulse - Abstract
We review studies of resonant and nonresonant ultrafast optical processes in semiconductor doped glasses, made at the University of Campinas. First we discuss measurements done in CdTe quantum-dots in glass, excited resonantly. In this case we observe a fast recombination, that depends on the size of the quantum-dot. For the smallest dots, with 3.2 nm average radius, the recovery time constant was found to be 360 fs. Then we describe the observation of the Optical Stark shift in CdSxSe1−x semiconductor-doped glass (SDG) excited under nonresonant below gap condition and probed with femtosecond optical pulses. An ultrafast and pure light-induced shift of the band edge is observed. For a pump intensity of 3 GW/cm2 the band shifts by 11 meV. The response of the shift tracks the profile of the pumping pulse.
- Published
- 1997
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