Search

Your search keyword '"S. Bruyre"' showing total 2 results
Start Over Author "S. Bruyre"
2 results on '"S. Bruyre"'

1. Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling

Author

S. Bruyre, Emmanuel Vincent, and Gerard Ghibaudo

Subjects
Materials science, business.industry, Extrapolation, Dielectric, Integrated circuit, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Reliability (semiconductor), law, Electronic engineering, Optoelectronics, SILC, Electrical and Electronic Engineering, Current (fluid), Thin film, Safety, Risk, Reliability and Quality, business, Voltage
Abstract

This paper focuses on the stress-induced leakage current (SILC) phenomenon in 5 nm thin oxides. The statistical investigation of SILC is emphasized and it is shown that this phenomenon can be directly linked to the intrinsic properties of the SiO 2 material. Moreover, it will be pointed out that the experimentally validated SILC build-up empirical model presents some limitations when using this model for extrapolation purposes at very low injected charges and/or low current/voltage levels.

Published
1999

2. Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox>32Å)

Author

S. Bruyre, Emmanuel Vincent, David Roy, Gerard Ghibaudo, G. Pananakakis, and Frederic Monsieur

Subjects
chemistry.chemical_compound, Materials science, Reliability (semiconductor), Condensed matter physics, Acceleration factor, chemistry, Electric breakdown, Electronic engineering, Oxide, Breakdown voltage, Time-dependent gate oxide breakdown, Voltage
Abstract

This paper presents reliability results related to ultra-thin oxides (20/spl Aring/< Tox < 32/spl Aring/). First of all Voltage to Breakdown (Vbd) is evidenced to linearly depend on the oxide thickness. Moreover, its acceleration factor is found independent of temperature and oxide thickness. Consequently, an empirical model is proposed for the voltage to breakdown dependencies. This model can be transposed to the time to breakdown (Tbd) analysis and a good agreement is found for Tbd prediction and experimental observations. Relationship to other literature models is also discussed.

Published
2002

Catalog

Books, media, physical & digital resources
See catalog results