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In this study, the effect of tempering treatment on the mechanical properties in modified 440A steel has been investigated. The amount of remaining carbide decreased with increasing the austenitizing treatment temperature, and all carbides were completely dissolved at . The amount of remaining carbide decreased with increasing the time of austenitizing, but the carbide remained insoluble up to 120 minutes at . With increasing the tempering temperature, tensile strength decreased, and elongation increased slowly, while hardness rapidly decreased, and impact value unchanged and then rapidly increased over . The strength and hardness slowly decreased, while the elongation and impact absorbed energy increased with increasing the tempering time. type carbide was precipitated and sharp decrease of elongation and toughness by tempering did not appear.

A theoretical model was developed for the angular profiles of ultrasonic backward radiation by the single transducer, pulse-echo method. Parts of the velocity dispersion curves for Ni/Al layered substrates with various bonding qualities were constructed using the backward angular radiation profiles. It was shown that the angular profiles of the insonified region were related to interface bonding qualities. An inclined C-scan method was used to receive backward radiation waves from a glass substrate with 1 and 3 mm notched gratings. The results show that the inclined C-scan method could be useful in the evaluation of a surface area.

This paper presents the process of measuring static noise margin (SNM), write noise margin (WNM) with 6 pin nanoprober, and characterization and analysis of SRAM cell stability through case studies of 45nm devices SRAM soft failures. It highlights that the local mismatch in the bit cell caused by slight variations in the transistor characteristics, such as Vth shift and Idsat, off variation, also can easily induce a soft failure. The analysis of the SNM TR characteristic is successfully demonstrated through the case study of 45nm SRAM devices. The chapter explains SNM measurement in the metal layer and transistor measurements in the CA layer. Measuring the SNM TR's characteristics is an important methodology in understanding the stability of each bit cell and failure mechanism depending on voltage, defects, and other factors. The next generation of nanoprobing analysis can be expanded.

Scan chain failure analysis is more difficult and complicated compared to memory analysis and analysis of defect monitoring test element group (DTEG) which has a large area is also difficult. This paper has verified that various defects of logic process sub 65nm device are easily analyzed through Resistive Contrast Imaging (RCI) and nanoprobe. In addition, Metal5 (M5) bridge defect (Short case) was detected in failure of scan ATPG (Automatic Test Pattern Generation) which has long failing nets and by discovering Via4 (V4) open defect (Open case) by Unetch, it was confirmed that it is possible to analyze high resistance Via failure. And it was verified that position of Cu line void of metal7 (M7) can be localized at high level metal layer. It is judged that it will be used usefully in failure analysis sub 65nm in the future as a technique utilizing principle of RCI and nanoprobe and also it will make lots of contributions to improvement of yield.

This paper describes a method for cost reduction estimation of electric vehicle. We used a cost reduction structure that consisted of five major subsystems (four-type battery and two-type motor) for electric vehicle. Especially, we estimated the potential for cost reductions in electric vehicle as a function of time using the learning curve. Also, we estimated the potentials of cost by depreciation.

Using La0.5Sro.5CoO3 bottom electrode layers, Bi4Ti3O12 thin films were grown on LaAlO3(001), Al2O3(0001), and Si(001) substrates. Crystalline orientation of the Bi4Ti3O12 thin films was examined by x-ray diffraction techniques. The cross-sectional microstructures of Bi4Ti3O12/La0.5Sr0.5CoO3 heterostructures are investigated. It is found that the crystalline orientation and the microstructure affect leakage current behavior of the Bi4Ti3O12 layers.