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A newer nanoscale technology called quantum-dot cellular automata (QCA) has been used by researchers to design digital circuits in place of the more traditional complementary metal–oxide semiconductor (CMOS) technology. This recent development in the technology change is due to the problems faced by CMOS technology in terms of power consumption and physical limitations. The advantages of QCA technology over CMOS technology are high density, low power consumption, high-speed operation, and less footprint area. This research provides a novel circuit for D-latch and static random access memory (SRAM) cells based on QCA technology. Initially, a D-latch circuit is proposed with a layout area of 0.01 μm2, a 0.5 clock cycle delay (latency), and a cell count of 18 QCA cells. Furthermore, an SRAM cell is proposed using the same D-latch circuit, which uses cell counts of 26 QCA cells and contributes to a layout area of 0.02 μm2 with a 0.75 clock cycle delay (latency). It is observed that our proposed circuits have a smaller layout area, fewer QCA cell counts, and a lower clock cycle delay (latency) than existing circuits. [ABSTRACT FROM AUTHOR]

Injection of interstitial atoms by specially prepared surfaces submerged in liquid water near room temperature offers an attractive approach for post-synthesis defect manipulation and isotopic purification in device structures. However, this approach can be limited by trapping reactions that form small defect clusters. The compositions and dissociation barriers of such clusters remain mostly unknown. This communication seeks to address this gap by measuring the dissociation energies of oxygen interstitial traps in rutile TiO2 and wurtzite ZnO exposed to liquid water. Isotopic self-diffusion measurements using 18O, combined with progressive annealing protocols, suggest the traps are small interstitial clusters with dissociation energies ranging from 1.3 to 1.9 eV. These clusters may comprise a family incorporating various numbers, compositions, and configurations of O and H atoms; however, in TiO2, native interstitial clusters left over from initial synthesis may also play a role. Families of small clusters are probably common in semiconducting oxides and have several consequences for post-synthesis defect manipulation and purification of semiconductors using submerged surfaces. [ABSTRACT FROM AUTHOR]

The Bernards–Malliaras model, published in 2007, is the primary reference for the operation of organic electrochemical transistors (OECTs). It assumes that, as in most transistors, the electronic transport is drift only. However, in other electrochemical devices, such as batteries, the charge neutrality is accompanied by diffusion-only transport. Using detailed 2D device simulations of the entire structure while accounting for ionic and electronic conduction, we show that high ion density (>1019 cm−3) results in Debye screening of the drain–source bias at the electrodes' interface. Hence, unlike the drift-only current in standard FETs or low ion density OECTs, the current in high ion density OECTs is diffusion only. Also, we show that since in OECTs, the volumetric capacitor and the semiconductor are one, the threshold voltage has a different meaning than that in FETs, where the semiconductor and the gate-oxide capacitor are distinct entities. We use the above insights to derive a new model useful to experimentalists. Lastly, we fabricated PEDOT:PSS fiber-OECTs and used the results to verify the model. [ABSTRACT FROM AUTHOR]

Recently developed ductile inorganic semiconductors have opened a new avenue toward potential applications such as flexible electronics. Significant studies have been conducted based on different atomic models to understand the deformation mechanism using first-principle calculations; however, the comparative study on these atomic models remains unexplored. In this paper, taking Ag2S as an example, we simulated the slipping process using bulk, slab, and tilt-cell models. Systematic supercell tests were performed to investigate the convergence of the slip/cleavage energy based on the three atomic models. It was found that a reasonably large supercell is required to converge the slip/cleavage energy, and the ratio between minimum cleavage and maximum slip energy converges to a comparable value among different atomic models, where the tilt-cell and slab models show slightly higher energy ratio values compared with the bulk model. However, the comparison of different exchange-correlation functionals and van der Waals corrections indicates that the calculations of slip and cleavage energies are sensitive to the choice of calculation methods, highlighting the importance of using the same method for comparing slip and cleavage energies of different materials. This work provides insights into understanding different atomic models of ductility mechanisms in ductile inorganic semiconductors. [ABSTRACT FROM AUTHOR]

Electric field induced time-dependent second harmonic generation (TD-SHG) is an emerging sensitive and non-contact method for qualitatively/quantitatively probing semiconductor parameters. The TD-SHG signal is related to the evolution of the built-in electric field due to laser-induced electron generation and transportation. Here, we conducted a comprehensive study of fixed charge density (Q ox ) and interface state density (D it ) using the conventional conductance method to compare them with the SHG signal from TD-SHG. The extracted Q ox is around 2.49 × 1010 cm−2 regardless of SiO2 thickness, corresponding to the constant SHG intensity at the minimum of TD-SHG. The extracted D it linearly decreases with the SiO2 thickness, which is related to the linear change of extracted time constant from TD-SHG. Therefore, the TD-SHG, being a sensitive and non-contact method as well as simple and fast, can serve as an alternative approach to test the semiconductor parameters, which may facilitate semiconductor testing. [ABSTRACT FROM AUTHOR]

Noting that the conventional collision-dominated electron transport perspective is only relevant when the length scale over which the transit occurs is greater than the electron's mean free path, one can conceptually partition the electron transport "space" into collision-dominated and ballistic electron transport regimes. As the boundaries between these regimes are quite porous, in this analysis, we devise a means of quantitatively examining the transition between electron transport regimes as the length scale is reduced on a continuum basis. Our approach introduces a collision-dominated fractional scattering parameter, this parameter quantifying the fraction of the total scattering rate that arises purely from bulk scattering processes, contact scattering also contributing to the total scattering rate. We pursue this analysis for two conventional semiconductors of interest, silicon and gallium arsenide. A determination of the dependence of the results on both the length scale and the crystal temperature is pursued. Finally, for the specific case of room temperature, a comparison with the results of experiment is performed. [ABSTRACT FROM AUTHOR]

Recently, the cold source field-effect transistor (CSFET) has emerged as a promising solution to overcome Boltzmann tyranny in its ballistic regime, offering a steep-slope subthreshold swing (SS) of less than 60 mV/decade. However, challenges arise due to scattering, particularly from inelastic scattering, which can lead to significant degradation in SS through cold carrier thermalization. In this study, we delve into the theoretical investigation of the electronic excitation/relaxation dynamic process using the state-of-the-art nonadiabatic molecular dynamics (NAMD) method. The mixed quantum-classical NAMD proves to be a powerful tool for comprehensively analyzing cold carrier thermalization and transfer processes in semiconductor Si, as well as metallic silicides (NiSi 2 and CoSi 2). The approach of mixed quantum-classical NAMD takes into account both carrier decoherence and detailed balance, enabling the calculation of thermalization factors, relaxation times, scattering times, and scattering rates at various energy levels. The thermalization of carriers exhibits a gradual increase from low to high energy levels. Achieving partial thermalization from the ground state to reach the thermionic current window occurs within a sub-100 fs time scale. Full thermalization across the entire energy spectrum depends sensitively on the barrier height, with the scattering rate exponentially decreasing as the energy of the out-scattering state increases. Notably, the scattering rate of NiSi 2 and CoSi 2 is two orders of magnitude higher than that of Si, attributed to their higher density of states compared to Si. This study not only provides insights into material design for low-power tunnel field-effect transistors but also contributes valuable information for advancing CSFET in emerging technologies. [ABSTRACT FROM AUTHOR]

Since the order–disorder phase transition easily occurs during the growth of optoelectronic II–IV–V2 ternary compounds, cation–cation antisites were always considered as the major point defects, while anion-related defects did not attract sufficient attention. In this paper, based on first-principles simulations, the anion–cation antisites are revealed to be comparable to or even dominate over the cation–cation antisites in II–IV–V2 phosphides and arsenides. These antisite defects are predicted to have significant impacts on the optoelectronic properties because they can either act as nonradiative recombination centers or enhance the p-type carrier concentration. Furthermore, based on the calculated defect properties and band alignments, we propose that the alloy ZnGe(P,As)2 can be an efficient p-type solar cell absorber. Its maximal open circuit voltage is effectively enlarged by the low valence band edge; meanwhile, the dominating anion–cation antisites are electrically benign. These results highlight the necessity of considering the anion–cation antisites in the defect engineering of II–IV–V2 phosphides and arsenides. [ABSTRACT FROM AUTHOR]

It has been shown theoretically that a strong quantum confinement regime in Si nanocrystals promotes highly efficient simultaneous excitation of two electron–hole pairs (biexciton) by a single photon. The rate (inverse lifetime) of biexciton generation has been calculated analytically as a function of the nanocrystal radius. The size-dependence of the rate in Si nanocrystal turns out to be sharp enough—in fact, it is inversely proportional to the sixth power of the radius. At radii values approaching a nanometer, the lifetime of biexciton generation falls into the nanosecond range. The threshold energy of this process in Si nanocrystals is exactly equal to twice the nanocrystal gap in contrast to the case of nanocrystals formed of direct-bandgap semiconductors, where the direct photon-induced creation of a biexciton with such an energy is, in fact, suppressed. [ABSTRACT FROM AUTHOR]

The accuracy of orbital-free density functional theory depends on the approximations made for a Kinetic Energy (KE) functional. Until now, the most accurate KEDFs are based on non-local kernels constructed from the linear response theory of homogeneous electron gas. In this work, we explore beyond the HEG by employing a more general kernel based on the jellium-with-gap model (JGM). The proposed functional incorporates several new features, such as (i) having the correct low momentum(q) limit of the response function for metals and semiconductors without any modeling term, (ii) the underlying kernel is density-independent, and most importantly, (iii) parameter-free. The accuracy and efficiency of the proposed JGM NL-KEDF have been demonstrated for several semiconductors and metals. The encouraging results indicate the utility and predictive power of the JGM kernel for NL KEDF developments. This approach is also physically appealing and practically useful as we have presented a general formalism to incorporate the gap kernel in all existing Lindhard-based functionals. [ABSTRACT FROM AUTHOR]

Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [Yin et al., Phys. Rev. Appl. 15, 014014 (2021)]; we termed these defect-level switching (DLS) devices. DLS devices feature all-electronic resistive switching and thus are volatile because of the "voltage-time" dilemma. However, the dynamics of volatile resistive switches may be valuable for emerging applications such as selectors in crosspoint memory and neuromorphic computing concepts. To design circuits using these volatile resistive switches, accurate modeling is essential. In this work, we develop an accurate and analytical model to describe the switching in DLS devices, based on the established theories of point defect metastability in Cu(In,Ga)Se2 (CIGS) and II–VI semiconductors. The analytical nature of our model allows for time-efficient simulations of dynamical behavior of DLS devices. We model the time durations of SET and RESET programming pulses, which can be exponentially shortened with respect to the pulse amplitude. We also demonstrate the concept of inverse design: given desired resistance states, the width and amplitude of the programming signal can be chosen accordingly. [ABSTRACT FROM AUTHOR]

We have measured diffuse scattering in a single crystal of Cd0.9Zn0.1Te using a state-of-the-art laboratory diffractometer. A large-box atomistic simulation of a model crystal is used in conjunction with Monte Carlo modeling and the Kirkwood potential. A combination of structural relaxation in the presence of the dopant and thermal motion results in good qualitative agreement between the computed diffraction patterns of the model crystal and the measured x-ray patterns. This is shown to be rather distinct from the diffuse scattering arising from purely structural relaxations or thermal motion only. The atoms are shown to displace predominantly in ⟨1,1,1⟩ and ⟨1,0,0⟩ type directions. Our approach to Monte Carlo modeling can easily be extended to more complex defect structures to incorporate, e.g., chemical ordering on the Cd/Zn sublattice, more than one species of dopant or vacancies. [ABSTRACT FROM AUTHOR]

Van der Waals heterostructures (vdWHs) of vertically stacked two-dimensional (2D) atomic crystals have been used to elicit intriguing phenomena stemming from strong electronic correlations, magnetic textures, and interlayer excitons spawned at the heterointerface. However, vdWHs comprised of heterointerfaces between these 2D atomic crystal lattices and molecular assemblies are emerging as equally intriguing platforms supporting properties to be harnessed for photovoltaic energy conversion, photodetection, spin-selective charge injection, and quantum emission. In this perspective, we summarize recent research examining exciton dynamics in heterostructures between semiconducting 2D transition metal dichalcogenides and molecular organic semiconductors. We discuss methods for assembly of these heterostructures, the nature of interlayer or charge-transfer excitons at transition-metal dichalcogenide (TMD)-molecule interfaces, explicit exciton transfer between organics and TMDs, and other interfacial phenomena driven by the merger of these two material classes. We also suggest key new research directions extending the remit of these 2D atomic–molecular lattice heterointerfaces into the domains of condensed matter physics, quantum sensing, and energy conversion. [ABSTRACT FROM AUTHOR]

This paper reports the changes in morphology and topographic roughness on the surface of a pristine TlGaS e 2 layered crystal caused by an external electric field applied perpendicular to the layer plane at room temperature. These electric-field-induced surface reconstructions and modifications in the TlGaS e 2 sample were monitored through x-ray reflectivity, x-ray diffraction, and atomic force microscopy techniques. Two distinct electric-field-induced surface responses have been observed: the shifting of the XRD peaks to the higher Bragg angles and the variations in the XRR curves depending on the strength and polarity of the applied external electric fields. AFM results show that the applied electric field leads to a reproducible transformation of the surface roughness of the TlGaS e 2 single crystal from smooth to disheveled, with well-defined depth protrusions. The relaxation time of these surface topological configurations induced under an applied dc electric field was found to be much longer than a few days. The electrostatic capacitive behavior of this two-dimensional semiconducting material is believed to be caused by lattice distortions and the formation of inner stresses (strains) during electric field poling, as well as a drop in the unit-cell characteristics of TlGaSe2. The current–voltage (I–V) measurements show a pronounced nonlinear relationship for a previously poled sample. This nonlinearity is attributed to the field-effect-induced capacitance in TlGaS e 2. Electromigration of intrinsic defects such as Se-anion vacancies, which are already present in the crystal lattice structure of virgin TlGaS e 2 , may diffuse into the sample surface from a bulk (or vice versa) during electric field applications. Finally, employing DFT simulations, we present that the Se-anion vacancy model may be beneficial because changes in the charge state of metal ions positioned around selenium vacancies could be expected. The slightly asymmetric capacitance with respect to the polarity of the bias potential applied to the top surface of TlGaS e 2 is justified by our theoretical calculations. [ABSTRACT FROM AUTHOR]

Irradiation of semiconductors by energetic beams generates excess electrons and holes and may cause device degradation or failure. Both gradual degradation by total ionizing radiation (TID) and sudden degradation/failure (soft/hard breakdown) by a combination of energetic heavy ions and high voltages (typically single-event effects or SEEs) are mediated by excess carriers. The role of defect dynamics in TID degradation has been adequately understood by a combination of experiments and density-functional-theory (DFT) quantum calculations, but little has been done so far to document a role for ion-induced defects in SEE. Here, we report proof-of-principle DFT calculations in a model cubic GaN system for two defect-related excess-carrier phenomena that can play a role in various forms of device degradation and failure. The first phenomenon is the existence, dynamics, and potential roles of defect-induced quasi-localized "resonant states" in the energy-band continua. These states can enhance TID-excess-carrier and hot-carrier degradation. Furthermore, they evolve and multiply during energetic-ion-induced atom recoils and defect creation (displacement damage) and can potentially serve as excess-carrier conduction paths in SEE. The second phenomenon is the conversion of isolated vacancies into nanovoids that can participate in the formation of conducting defect "nanowires" dressed by resonances or in explosive SEE hard breakdowns. [ABSTRACT FROM AUTHOR]

The long-term storage performance of energetic multilayer nanofilms is of great significance for their applications. In this paper, it is proposed to add a 10 nm Cu barrier layer between Al/CuO composite films to increase their storage stability. The Al/CuO composite film and Al/Cu/CuO composite film were aged for 14 days in an environment with a relative humidity of 40% and a temperature of 71 °C. Scanning electron microscopy and differential scanning calorimetry were used to analyze the microstructure and thermodynamic properties of the energetic films before and after aging, and the electrical detonation performance and ignition ability of energy-containing semiconductor bridges were studied. The results indicate that after aging for 14 days in an environment with a relative humidity of 40% and a temperature of 71 °C, the Al layer of the Al/CuO composite film becomes thinner, the Al2O3 interface layer increases, and the heat release decreases. The interlayer microstructure of the Al/Cu/CuO energetic multilayer nanofilms did not change significantly, and the addition of a 10 nm Cu layer formed a low-temperature Al–Cu alloy, reducing the reaction initiation temperature from 626 to 570 °C. The critical ignition time and critical ignition energy of the Al/CuO-energetic semiconductor bridge (ESCB) increased, the flame duration shortened from 440 to 300 μs, the flame size decreased by 50%, the plasma temperature decreased, and aging had no significant effect on the electrical explosion performance of Al/Cu/CuO-ESCB. After aging for 14 days in an environment with a relative humidity of 40% and a temperature of 71 °C, the maximum ignition gap of B/KNO3 for Al/CuO-ESCB decreased from 1.4 to 1.2 mm, while the maximum ignition gap for Al/Cu/CuO-ESCB remained at 1.6 mm, which significantly improved the ignition performance and long storage performance of the energetic semiconductor bridge. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN) and aluminum nitride (AlN), as examples of third-generation semiconductors, have attracted significant interest due to their remarkable physical attributes, including a wide bandgap, high breakdown voltage, exceptional chemical stability, and high thermal conductivity. These characteristics render GaN and AlN highly promising for use in power and (opto)-electronic devices. Consequently, there is a growing demand for high-quality GaN and AlN crystals on the centimeter scale. As the dislocation density in these materials decreases, the need for a reliable method of dislocation characterization becomes more pressing. Synchrotron radiation x-ray topography (SR-XRT) has emerged as a superior, nondestructive technique for the precise characterization of crystal defects. This review briefly introduced the principle of XRT, and its application in the analysis of dislocations in GaN and AlN crystals is summarized. By examining the relationship between the SR-XRT image contrast and the Burgers vectors of dislocations, it is possible to categorize wafer dislocations and determine the magnitude and direction of Burgers vectors. Additionally, SR-XRT facilitates the analysis of interactions between dislocations in GaN and AlN crystals. These analyses are instrumental in advancing the development of superior crystals. This review concludes with a discussion of the current challenges faced by SR-XRT and a projection of its future applications in characterizing third-generation semiconductor crystal materials. This review offers significant guidance for the characterization of nitride crystal defects using SR-XRT. [ABSTRACT FROM AUTHOR]

Wurtzite ScxAl1−xN/GaN (x = 0.13–0.18) multi-quantum wells grown by molecular beam epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared intersubband absorption in the technologically important 1.8–2.4 μm range. Band structure simulations reveal that, for GaN wells wider than 3 nm, the quantized energies are set by the steep triangular profile of the conduction band caused by intrinsic polarization fields. As a result, the intersubband transition energies provide unique and direct access to essential ScAlN polarization parameters. Measured infrared absorption indicates that the spontaneous polarization difference of the presumed lattice-matched Sc0.18Al0.82N/GaN heterostructure is smaller than the theoretically calculated value. The intersubband transition energies are relatively insensitive to the barrier alloy composition indicating negligible variation of the net polarization field in the probed 0.13–0.18 Sc composition range. [ABSTRACT FROM AUTHOR]

Heterogeneous photocatalysis is an important research problem relevant to a variety of sustainable energy technologies. However, obtaining high photocatalytic efficiency from visible light absorbing semiconductors is challenging due to a combination of weak absorption, transport losses, and low activity. Aspects of this problem have been addressed by multilayer approaches, which provide a general scheme for engineering surface reactivity and stability independent of electronic considerations. However, an analogous broad framework for optimizing light–matter interactions has not yet been demonstrated. Here, we establish a photonic approach using semiconductor metasurfaces that is highly effective in enhancing the photocatalytic activity of GaAs, a high-performance semiconductor with a near-infrared bandgap. Our engineered pillar arrays with heights of ∼150 nm exhibit Mie resonances near 700 nm that result in near-unity absorption and exhibit a field profile that maximizes charge carrier generation near the solid–liquid interface, enabling short transport distances. Our hybrid metasurface photoanodes facilitate oxygen evolution and exhibit enhanced incident photon-to-current efficiencies that are ∼22× larger than a corresponding thin film for resonant excitation and 3× larger for white light illumination. Key to these improvements is the preferential generation of photogenerated carriers near the semiconductor interface that results from the field enhancement profile of magnetic dipolar-type modes. [ABSTRACT FROM AUTHOR]

Point defects have a strong influence on the physical properties of materials, often dominating the electronic and optical behavior in semiconductors and insulators. The simulation and analysis of point defects is, therefore, crucial for understanding the growth and operation of materials, especially for optoelectronics applications. In this work, we present a general-purpose Python framework for the analysis of point defects in crystalline materials as well as a generalized workflow for their treatment with high-throughput simulations. The distinguishing feature of our approach is an emphasis on a unique, unit cell, structure-only, definition of point defects which decouples the defect definition, and the specific supercell representation used to simulate the defect. This allows the results of first-principles calculations to be aggregated into a database without extensive provenance information and is a crucial step in building a persistent database of point defects that can grow over time, a key component toward realizing the idea of a "defect genome" that can yield more complex relationships governing the behavior of defects in materials. We demonstrate several examples of the approach for three technologically relevant materials and highlight current pitfalls that must be considered when employing these methodologies as well as their potential solutions. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold immense promise as ultrathin-body semiconductors for cutting-edge electronics and optoelectronics. In particular, their sustained charge mobility even at atomic-level thickness as well as their absence of surface dangling bonds, versatile band structures, and silicon-compatibility integration make them a prime candidate for device applications in both academic and industrial domains. Despite such high expectations, group-VI TMDs reportedly exhibit a range of enigmatic properties, such as substantial contact resistance, Fermi level pinning, and limited unipolar charge transport, which are all rooted in their inherent defects. In other words, intrinsic physical properties resulting from their native defects extend their influence beyond the material level. Bridging point-defect-induced material properties and their behavior at the device level, this Perspective sheds light on the significance of crystalline defects beyond a rather simple defect–property relationship. As a distinctive approach, we briefly review the well-established defect model of conventional III–V semiconductors and further apply it to the emergent defect behaviors of 2D TMDs such as their defect-induced gap states. Within the main discussion, we survey a range of behaviors caused by the most prevalent intrinsic defect, namely, vacancies, within 2D TMDs, and their implications for electronic and optoelectronic properties when employed at the device level. This review presents an in-depth summary of complexities in material properties as well as device characteristics arising from intrinsic point defects and provides a solid foundation for the cross-links among native defects and material/device properties. [ABSTRACT FROM AUTHOR]

Optical second harmonic generation (SHG) can be employed to characterize the passivation quality of semiconducting material interfaces. The interface electric field (EDC) related to the existing charges at and near the interface, including the fixed oxide charges Qox, gives rise to the electric field induced second harmonic phenomenon. In this paper, we calibrate the SHG response for EDC measurement, using Al2O3/SiO2/Si(100) samples with different Qox. To perform this calibration, SHG and capacitance-voltage measurements (to access the electrical field of the samples) were made. The experimental results match well the simulated calibration curve, proving the potential of the SHG as stand-alone characterization technique for dielectric stacks on Si. [ABSTRACT FROM AUTHOR]

Crystal growth is a complex process with far-reaching implications for high-performance materials across various fields. Recent advancements in structural analysis methods such as polyhedral template matching, which allows semiconductor-specific analysis, coupled with simulation technology, have enabled the comprehensive study of crystallization dynamics in semiconductors. However, the exploration of polycrystalline semiconductors created with minimal external intervention of the crystallization processes is relatively uncharted in comparison with metals. In this study, we employ molecular dynamics to simulate the growth of polycrystalline CdTe/CdS with the assumptions of classical mechanics, a Stillinger–Weber potential, an amorphous substrate, and common vapor growth conditions to allow the polycrystalline structures to evolve naturally. Post-simulation, we identify and analyze impactful structures and events, comparing them to theory and experiment to gain insight into various modes of crystallization dynamics. Two research questions guided the study: (1) How realistic are assumption-less simulated polycrystalline semiconductor structures? (2) To what extent can the approach provide insight into crystallization? The simulations, performed with minimal external control, yield polycrystalline structures mirroring experimental findings. The analysis reveals key crystallization insights, such as the role of amorphous atoms in the transition from nucleation to grain growth and the transformative impact of single events, such as dislocations, on crystallization dynamics. The method paves the way for reproducing and analyzing realistic polycrystalline semiconductor structures with minimal simulation assumptions across various growth modes. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) intrinsic ferromagnetic (FM) materials are promising candidates for fabricating next generation high-performance spintronic devices. However, all experimentally verified 2D FM semiconductors have Curie temperature (Tc) far below room temperature, which hinders their practical applications. Based on first-principles calculations, a stable and previously undiscovered 2D CrGaS3 structure is predicted, which is a semiconductor with an indirect bandgap of 1.99 eV and displays out-of-plane magnetic anisotropy. More importantly, it exhibits high-temperature ferromagnetism, with Tc ranging between 520 and 814 K. The high Tc is attributed to the presence of both direct-exchange and super-exchange interactions that are ferromagnetic, along with the eg-px/py-eg super exchange having a zero virtual exchange gap. Furthermore, it has been observed that the magnetic anisotropy can be tuned by external strain. These findings indicate its potential as a promising candidate for the rapid development of 2D spintronic applications. [ABSTRACT FROM AUTHOR]

Two-dimensional magnetic materials have been increasingly studied and discussed in the field of spintronics due to their unique electronic properties, high spin polarizability, and a variety of magnetic properties. In this paper, we report a new two-dimensional bilayer hexagonal monolayer material bilayer hexagonal structure (BHS)-CrN2 by first-principles calculations. The BHS-CrN2 nanosheet is an intrinsic ferromagnetic semiconductor material, and the Curie temperature obtained by Monte Carlo simulation is 343 K. The absence of a significant imaginary frequency in the phonon spectrum indicates the dynamic stability of BHS-CrN2. After ab initio molecular dynamics simulation, the supercell of BHS-CrN2 remains a complete structure, indicating its thermal stability. The calculated elastic moduli satisfy the Born–Huang criterion, indicating that the BHS-CrN2 system has good mechanical stability. Interestingly, the compressive strain and O atom doping can transform the electronic structure of BHS-CrN2 from a semiconductor to a half-metal, and the Curie temperature of BHS-CrN2 can be further increased to 1059 K when a 5% tensile strain is applied. Furthermore, the BHS-CrN2 in the ferromagnetic state shows a significant in-plane magnetic anisotropy energy of 0.01 meV per Cr, and the CrP2 and CrAs2 show a large out-of-plane magnetic anisotropy energy of 0.207 and 0.988 meV per Cr, respectively. The results show that the intrinsic ferromagnetic semiconductor BHS-CrN2 has good stability, high Curie temperature, and tunable magnetic properties, which is a promising material for room-temperature spintronic devices. [ABSTRACT FROM AUTHOR]

This Perspective focuses on experimental and theoretical aspects of positron annihilation spectroscopy. This set of methods is highly suitable for identifying and quantifying vacancy-type defects in semiconductors and also allows for analyzing their physics characteristics. We present selected examples from the past decade, where the methods have been used for obtaining timely and useful insights into the defect-controlled phenomenon in narrow-gap (Ge, GaSb) and wide-gap (III-nitride, oxide) semiconductors. We also discuss possible future developments that may allow more detailed studies in novel semiconductor materials and devices with ever more complex lattice structures. [ABSTRACT FROM AUTHOR]

It is a formidable challenge to find the minority carrier recombination lifetime in low-dimensional devices as low-dimensionality increases the surface recombination rate and often reduces the recombination lifetime to a scale of picoseconds. In this work, we demonstrated a simple but powerful method to quantitatively probe the minority carrier recombination lifetime in silicon nanowires or microwires by fitting the experimental photoresponses with our recently established analytical photoresponse principle of photoconductors. The nanowires were passivated with small molecules and Al2O3 to suppress surface recombination, which will increase the minority recombination lifetimes. As expected, the minority carrier recombination lifetime found by this approach increases by orders of magnitude. These wires were also made into PIN diodes, the leakage of which was reduced at least 1 order of magnitude after surface passivation by Al2O3. The minority recombination lifetime found from the leakage current of these devices is largely consistent with what we found from our analytical photoresponse principle. As a further step, we performed scanning photocurrent microscopy to find the minority diffusion length from which we found that the minority recombination lifetime is close to what we found from the analytical photoresponses. In short, this work validated that our analytical response principle is a reliable method to find the minority recombination lifetime in low-dimensional semiconductors. [ABSTRACT FROM AUTHOR]

We present a highly efficient workflow for designing semiconductor structures with specific physical properties, which can be utilized for a range of applications, including photocatalytic water splitting. Our algorithm generates candidate structures composed of earth-abundant elements that exhibit optimal light-trapping, high efficiency in H 2 and/or O 2 production, and resistance to reduction and oxidation in aqueous media. To achieve this, we use an ionic translation model trained on the Inorganic Crystal Structure Database to predict over 30 000 undiscovered semiconductor compositions. These predictions are then screened for redox stability under hydrogen evolution reaction or oxygen evolution reaction conditions before generating thermodynamically stable crystal structures and calculating accurate bandgap values for the compounds. Our approach results in the identification of dozens of promising semiconductor candidates with ideal properties for artificial photosynthesis, offering significant advancement toward the conversion of sunlight into chemical fuels. [ABSTRACT FROM AUTHOR]

The delafossite semiconductor CuInO 2 has shown great potential in transparent electronics for its bipolar dopability. However, little is known about the limiting factors about its carrier mobility, which impedes its further development. Applying a b i n i t i o Boltzmann transport formalism, here we calculate the intrinsic, phonon-limited carrier mobility of CuInO 2 and study its carrier–phonon coupling mechanisms. The calculated room-temperature electron and hole mobilities along the in-plane direction are μ e = 97.6 cm 2 V − 1 s − 1 and μ h = 1.4 cm 2 V − 1 s − 1 , respectively. We find that the electron mobility is limited by the combination of acoustic phonons and polar longitudinal optical (LO) phonons, while the hole mobility is mainly limited by carrier–acoustic phonon scattering. We further show that the electron effective mass and bandgap of CuInO 2 can be tuned through strain engineering for improved carrier transport properties. Our work uncovers the underlying factors that govern the intrinsic carrier mobility of the transparent bipolar semiconductor CuInO 2 and sheds light on the design and exploration of bipolar conducting transparent conductive oxides (TCOs) based on delafossite semiconductors. [ABSTRACT FROM AUTHOR]

This Tutorial provides a comprehensive overview of various k ⋅ p models used to describe the electronic band structures of semiconductors with cubic diamond and zinc blende symmetries. Our primary focus is on III–V semiconductors, with a particular emphasis on highly mismatched alloys. We begin our exploration with the six-band k ⋅ p model, which effectively captures interactions within the highest valence bands. Following that, we delve into the intricacies of the eight-band k ⋅ p model, which takes into account strain effects and modifications to energy dispersion. The Tutorial also introduces the band anticrossing model and its corresponding ten-band k ⋅ p models, specifically tailored for dilute nitride semiconductors. Furthermore, we extend our discussion to the valence band anticrossing model and its application to the 14-band k ⋅ p model in the context of dilute bismide materials. Additionally, we emphasize the significance of more comprehensive models, exemplified by the 30-band k ⋅ p model, for faithfully representing the entire Brillouin zone. [ABSTRACT FROM AUTHOR]

The delafossite semiconductor CuInO 2 has shown great potential in transparent electronics for its bipolar dopability. However, little is known about the limiting factors about its carrier mobility, which impedes its further development. Applying a b i n i t i o Boltzmann transport formalism, here we calculate the intrinsic, phonon-limited carrier mobility of CuInO 2 and study its carrier–phonon coupling mechanisms. The calculated room-temperature electron and hole mobilities along the in-plane direction are μ e = 97.6 cm 2 V − 1 s − 1 and μ h = 1.4 cm 2 V − 1 s − 1 , respectively. We find that the electron mobility is limited by the combination of acoustic phonons and polar longitudinal optical (LO) phonons, while the hole mobility is mainly limited by carrier–acoustic phonon scattering. We further show that the electron effective mass and bandgap of CuInO 2 can be tuned through strain engineering for improved carrier transport properties. Our work uncovers the underlying factors that govern the intrinsic carrier mobility of the transparent bipolar semiconductor CuInO 2 and sheds light on the design and exploration of bipolar conducting transparent conductive oxides (TCOs) based on delafossite semiconductors. [ABSTRACT FROM AUTHOR]

The thermal conductivity of group IV elements—germanium, silicon, and diamond—is described in order to demonstrate various important and interesting aspects of the mechanism of phonon heat transfer in single-crystalline semiconductors and dielectrics. The measured temperature dependence of thermal conductivity κ (T) for these materials reveals different phonon scattering processes that determine thermal conductivity. In addition to the intrinsic processes of phonon–phonon scattering, scattering by isotopes, dopants, free electrons, sample surfaces, the effects of phonon focusing, irradiation with high-energy particles, and phonon hydrodynamics are discussed. [ABSTRACT FROM AUTHOR]

This paper describes the contributions made by Władysław (Władek) Walukiewicz and his colleagues to the field of ferromagnetic semiconductor (FMS) alloys, such as (Ga,Mn)As. We focus on two key accomplishments. First, this team has predicted the formation of Mn interstitials in these materials, which have a profound effect on ferromagnetism in semiconductors. Additionally, identifying the conditions at which interstitials form has provided grounds for optimizing their ferromagnetic properties. Second, by applying the approach of band anticrossing to ferromagnetic semiconductors, this team has mapped out the properties of an Mn-derived impurity band in these materials. This is of particular importance in the field, because holes, which reside in the Mn-derived impurity band, are the very mechanism responsible for ferromagnetic order in FMSs. We discuss the effect that these accomplishments have on our understanding of FMSs and how they have contributed to progress in this area. We then describe the pathways that these achievements have opened up toward further progress in both basic and applied fronts of ferromagnetism in semiconducting systems; and we present our perspective on where additional work along the lines initiated by Władek Walukiewicz should be extended to further benefit this field. [ABSTRACT FROM AUTHOR]

Periodic density functional theory was employed to investigate the impact of chemical modifications on the properties of π-conjugated acenedithiophene molecular crystals. Here, we highlight the importance of the β-methylthionation effect, the position of the sulfur atoms of the thiacycle group and their size, and the number of central benzene rings in the chemical modification strategy. Our results show that the introduction of the methylthio groups at the β-positions of the thiophene and the additional benzene ring at the center of the BDT crystal structure are a promising strategy to improve the performance of organic semiconductors, as observed experimentally. We found that β-MT-ADT exhibits large charge carrier mobility, which is in good agreement with the experimental results and comparable to that of rubrene. In addition, the electronic and optical properties of these ambipolar materials suggest promising performances with β-MT-ADT > ADT > β -MT-NDT > NDT > BEDT-BDT > β -MT-BDT > BDT. Moreover, functionalization with thiacycle-fused sulfur atoms of different sizes and numbers improve the properties of BDT but is still less efficient than the methylthionation effect. Overall, our findings suggest a promising molecular modification strategy for possibly high performance ambipolar organic semiconducting materials. [ABSTRACT FROM AUTHOR]

Electronics today has evolved significantly, including its application in transparent and flexible devices. Flexible electronics offers new product concepts, including low production cost, low energy consumption, and sustainable and environmentally friendly materials. This concept leads to the development of novel materials that realize today's requirements. Incorporating optically transparent and flexible thin-film-based devices into the electronic circuitry helps in maintaining high conductivity along with achieving the similar electronic behavior of the conventional electronic gadgets. Thin-film diodes (TFDs) and thin-film transistors (TFTs) are the core materials to be incorporated as building blocks for flexible devices. Among them, oxide-based thin films have been marked to be significant because of their efficient electrical performance, low temperature processing, and device flexibility. The present article reviews the concepts and application of zinc oxide (ZnO) as the semiconducting material for flexible thin-film devices. We also review flexible and transparent TFDs and TFTs that are based prominently on ZnO as the semiconducting material. Furthermore, the present issues have also been addressed. [ABSTRACT FROM AUTHOR]

Potassium hydroxide (KOH) aqueous solutions can effectively etch germanium. Etch rates were determined in an electrolytic etch cell. Electrically isolated Ge wafers were subject to an etch rate of 1.45 ± 0.07 nm min−1, increasing to 12.6 ± 0.2 nm min−1 when grounded, 97 ± 2 nm min−1 when biased at −0.9 V, and 138 ± 2 nm min−1 with periodic biasing. Results suggest that the previously reported limited etching in KOH is associated with the recombination of holes with electrons injected from the surface reaction. The results of this study demonstrate that changing the hole concentration through biasing is an effective tool to control electrolytic etch rates, enabling future selective etching processes for germanium.

Using high-frequency electron paramagnetic resonance (EPR), we have observed the ferromagnetic coupling of manganese Mn2+ pairs in a layered van der Waals GaS semiconductor. The EPR spectra of Mn2+ pairs (Mn24+) [replacing covalently bonded Ga24+ pairs oriented along the chain axis (c axis) of two gallium ions and being situated in the center of the layer] were recorded at 94 and 130 GHz. The fine structure parameters for the lower multiplets with spin S = 5 and S = 4 were determined equal to D = −0.040 cm−1 and D ≅ −0.035 cm−1, respectively. Based on the observation of additional EPR lines in the region of intersection of the levels in the magnetic field of the multiplet with S = 5 and S = 4, the energy of the isotropic exchange interaction J was estimated to be ∼−0.5 cm−1. For all transitions, a well-resolved hyperfine structure was observed, due to the interaction with two equivalent 55Mn nuclei, leading to the appearance of 11 lines with a hyperfine interaction constant A = 30(1) × 10−4 cm−1, which is approximately half the hyperfine interaction constant for single Mn2+ ions. In addition, a signal from single manganese ions Mn2+ with spin S = 5/2 and a hyperfine interaction constant A = 60(1) × 10−4 cm−1 was observed, which are characterized by extremely large fine structure splitting of D = −0.15 cm−1. Simultaneously with EPR studies, the crystals were monitored by photoluminescence and micro-Raman scattering measurements using a microscope with confocal optics. [ABSTRACT FROM AUTHOR]

We apply an Ising-type model to estimate the bandgaps of the polytypes of group IV elements (C, Si, and Ge) and binary compounds of groups: IV–IV (SiC, GeC, and GeSi), and III–V (nitride, phosphide, and arsenide of B, Al, and Ga). The models use reference bandgaps of the simplest polytypes comprising 2–6 bilayers calculated with the hybrid density functional approximation, HSE06. We report four models capable of estimating bandgaps of nine polytypes containing 7 and 8 bilayers with an average error of ≲0.05 eV. We apply the best model with an error of < 0.04 eV to predict the bandgaps of 497 polytypes with up to 15 bilayers in the unit cell, providing a comprehensive view of the variation in the electronic structure with the degree of hexagonality of the crystal structure. Within our enumeration, we identify four rhombohedral polytypes of SiC—9R, 12R, 15R(1), and 15R(2)—and perform detailed stability and band structure analysis. Of these, 15R(1) that has not been experimentally characterized has the widest bandgap (> 3.4 eV); phonon analysis and cohesive energy reveal 15R(1)-SiC to be metastable. Additionally, we model the energies of valence and conduction bands of the rhombohedral SiC phases at the high-symmetry points of the Brillouin zone and predict band structure characteristics around the Fermi level. The models presented in this study may aid in identifying polytypic phases suitable for various applications, such as the design of wide-gap materials, that are relevant to high-voltage applications. In particular, the method holds promise for forecasting electronic properties of long-period and ultra-long-period polytypes for which accurate first-principles modeling is computationally challenging. [ABSTRACT FROM AUTHOR]

Optoelectronic functional materials with flexible and in-plane anisotropic properties has been a significant development direction of nanotechnology due to wearable and polarized optoelectronic applications. Herein, the elasticity, global band dispersion, optical dielectric properties of environmentally friendly IVB-VIA layered transition metal trichalcogenides (MX3, M = Zr, Hf; X = S, Se) are investigated systematically by density functional theory with different kinds of van der Waals correction and hybrid functional. The low elastic modulus suggests that they are appropriate for the design of flexible optoelectronic devices. Originating from the effect of d states of chalcogens and s states of transition metals, the dispersion of the valence band edge of monolayer MX3 shows that the effective mass of carriers along the wave vector kx is much heavier than that of carriers along the wave vector ky. This means that the mobility of carriers exhibits obvious in-plane anisotropy. Meanwhile, the optical dielectric properties of monolayer MX3 as well as absorbed photon flux (Jabs) of the related heterostructures display noteworthy in-plane anisotropy in the visible-IR region. The ratio of Jabs from different direction reaches up to 1.7. This work could not only promote understanding of rich photophyiscal properties of transition metal trichalcogenides, but also provide a theoretical reference for the invention of high-performance optoelectronic devices with high flexibility and anisotropy. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) transition metal dihalides (TMDHs) have attracted great interest owing to their unique magnetic and semiconductor properties. Compared with the mirror/inversion symmetric materials, 2D Janus materials possess vertical intrinsic dipole moment, which offer a versatile platform for the fundamental physics and future spintronic devices. Here, we systematically explore the magnetic and electronic properties of the 2D Janus transition metal dihalides MXY (M = Co and Ni; X ≠ Y = Cl, Br, and I) monolayers and bilayers by using density functional theory. The monolayer CoClBr, NiClBr, and NiBrI are bipolar ferromagnetic semiconductors that possess the valence and conduction band edges of different spin channels. The magnetism of the bilayer CoClBr, NiClBr, and NiBrI is highly dependent on the accumulated dipole moments of the two adjacent layers. When the dipole moments in both layers are aligned in the same direction and the accumulated dipole moments are nonzero, the systems are antiferromagnetic half semiconductors. However, when the dipole moments in the two layers are opposite and the accumulated dipole moments are zero, the systems are A-type antiferromagnetic semiconductors. Our findings are helpful to understand the magnetism of Janus TMDHs and guide experiments in exploring their potential application in spintronic devices. [ABSTRACT FROM AUTHOR]

Quaternary III–V semiconductors are one of the most promising material classes in optoelectronics. The bandgap and its character, direct or indirect, are the most important fundamental properties determining the performance and characteristics of optoelectronic devices. Experimental approaches screening a large range of possible combinations of III- and V-elements with variations in composition and strain are impractical for every target application. We present a combination of accurate first-principles calculations and machine learning based approaches to predict the properties of the bandgap for quaternary III–V semiconductors. By learning bandgap magnitudes and their nature at density functional theory accuracy based solely on the composition and strain features of the materials as an input, we develop a computationally efficient yet highly accurate machine learning approach that can be applied to a large number of compositions and strain values. This allows for a computationally efficient prediction of a vast range of materials under different strains, offering the possibility of virtual screening of multinary III–V materials for optoelectronic applications. [ABSTRACT FROM AUTHOR]

Semiconductor alloy materials are highly versatile due to their adjustable properties; however, exploring their structural space is a challenging task that affects the control of their properties. Traditional methods rely on ad hoc design based on the understanding of known chemistry and crystallography, which have limitations in computational efficiency and search space. In this work, we present ChecMatE (Chemical Material Explorer), a software package that automatically generates machine learning potentials (MLPs) and uses global search algorithms to screen semiconductor alloy materials. Taking advantage of MLPs, ChecMatE enables a more efficient and cost-effective exploration of the structural space of materials and predicts their energy and relative stability with ab initio accuracy. We demonstrate the efficacy of ChecMatE through a case study of the InxGa1−xN system, where it accelerates structural exploration at reduced costs. Our automatic framework offers a promising solution to the challenging task of exploring the structural space of semiconductor alloy materials. [ABSTRACT FROM AUTHOR]

In this article, we use spatially modulated control fields to increase the four-wave mixing efficiency in a four-subband semiconductor asymmetric double quantum well, motivated by similar works in atomic systems. Using a simplified version of the propagation equations, we show analytically that for control fields with a constant amplitude and linearly varying mixing angles with the propagation distance, a conversion efficiency close to unity can be achieved even for relatively short propagation distances. Subsequently, we confirm these results by numerically simulating the full set of propagation equations. [ABSTRACT FROM AUTHOR]

Sn-doped indium oxide (ITO) semiconductor nano-films are fabricated by plasma-enhanced atomic layer deposition using trimethylindium (TMIn), tetrakis(dimethylamino)tin (TDMASn), and O2 plasma as the sources of In, Sn and O, respectively. A shared temperature window of 150 °C– 200 °C is observed for the deposition of ITO nano-films. The introduction of Sn into indium oxide is found to increase the concentration of oxygen into the ITO films and inhibit crystallization. Furthermore, two oxidation states are observed for In and Sn, respectively. With the increment of interfaces of In–O/Sn–O in the ITO films, the relative percentage of In3+ ions increases and that of Sn4+ decreases, which is generated by interfacial competing reactions. By optimizing the channel component, the In0.77Sn0.23O1.11 thin-film transistors (TFTs) demonstrate high performance, including μ FE of 52.7 cm2 V−1 s−1, and a high I ON/ I OFF of ∼5 × 109. Moreover, the devices show excellent positive bias temperature stress stability at 3 MV cm−1 and 85 °C, i.e. a minimal V th shift of 0.017 V after 4 ks stress. This work highlights the successful application of ITO semiconductor nano-films by ALD for TFTs. [ABSTRACT FROM AUTHOR]

The electrical conductivity and volt–ampere characteristics (VAC) of the p-CuTlS2 single crystal with specific resistance ρ = 4 0 Ω ⋅ cm and irradiated by γ -quantum were studied in the range of 100–300 K temperature and 10–104 V/cm. It was determined that the cause of the conduction disorder observed in the CuTlS2 single crystal at low electric fields and high radiation doses is the formation of defect clusters dominated by cation vacancies. A sharp increase in current at high electric fields and temperatures occurs as a result of thermo-field ionization of the acceptor level with activation energy Δ E a = 0. 0 8 eV and the ionization voltage decreases with increasing radiation dose. Based on the determination of the parameters (λ , r m , n 0 , ε) that determine the mechanism of current flow, the dependence of the shape of the potential hole on the radiation dose was determined. [ABSTRACT FROM AUTHOR]

This review article presents insights into acoustic interactions with semiconductors, exploring a continuum from electron dynamics to exciton behavior while highlighting recent developments in organic material systems. Various aspects of acoustic interactions, encompassing the manipulation of electrons and their transport mechanisms for applications in the fields of acoustoelectric and acousto-optics, explored by studying surface acoustic wave (SAW) devices integrated with inorganic and organic semiconductors, are presented here. SAWs are guided waves propagating along a piezoelectric material surface, inducing acoustic strain and piezoelectric fields within a semiconductor upon contact. These fields create a dragging force, transferring energy and momentum into the semiconductor, which manipulate and transport charge carriers, thereby generating an acoustoelectric current. Furthermore, SAW can influence exciton dynamics via type-II as well as type-I band-edge modulations, leading to alterations in their spatial distribution, causing transport of electron–hole pairs as distinct charge carrier packets and as bound pairs, respectively, along the SAW path. This paper explores advancements in these phenomena, shedding light on innovative applications and, especially, novel insights into the dynamic interplay between acoustics and organic semiconductor physics. The review concludes by outlining challenges and prospects in the field of SAW and semiconductor interactions, providing a roadmap for future research endeavors. [ABSTRACT FROM AUTHOR]

Since crystal structure dictates the resultant physical properties of materials, titled physical features of the P21 monoclinic SiGe semiconductors, which are still unclear, have been revealed by density functional theory (DFT). The electronic band gap value with 0.49 eV was found to be in the order of previously published cubic and hexagonal closed-packed SiGe semiconductors. Surprisingly, P21 monoclinic SiGe has a room temperature Seebeck coefficient of 1500 μ V/K which is higher than the reported data of both cubic and hexagonal SiGe alloys. Further, the mechanically stable P21 monoclinic phase of the SiGe displays a brittle mechanical character with clear elastic anisotropy has also been deduced. The P21 monoclinic phase of the SiGe can be also considered a good high-dielectric material and beneficial for practical applications of IR or UV goals due to its high refractive index. [ABSTRACT FROM AUTHOR]

The electronic intrinsic surface states in wurtzite Zn-IV-N2 (with group- IV = Sn , Ge and Si) semiconductors were investigated using an intermediate-coupling variational approach considering the electron–surface optical phonon interaction influence. The intrinsic surface state energy distribution and the average penetrating depth of surface state eigen-wave function of the electron have been evaluated numerically by changing the surface potential barrier V 0 for wurtzite ZnSnN2, ZnGeN2 and ZnSiN2, respectively. The results show that the electronic intrinsic surface state energy increased linearly with increasing surface potential barrier V 0 for all the calculated materials. The result also indicated that the electronic intrinsic surface state energies variations due to the influence of electron–surface optical phonon interaction are dozens of meV. The average penetrating depth of electronic surface state eigen-wave function is independent of V 0 . Its value is no more than the corresponding material's lattice constant. The electronic scattering by surface optical phonon should be taken into account in the study of the intrinsic surface state of electrons in the group of Zn-IV-nitrides (with IV = Sn , Ge and Si) semiconductors, especially for materials having strong electron–phonon interaction and wide band gap. [ABSTRACT FROM AUTHOR]