Search

Atomistic simulations often rely on interatomic potentials to access greater time and length scales than those accessible to first-principles methods, such as density functional theory. However, since a parameterized potential typically cannot reproduce the true potential energy surface of a given system, we should expect a decrease in accuracy and increase in error in quantities of interest calculated from these simulations. Quantifying the uncertainty on the outputs of atomistic simulations is thus an important, necessary step so that there is confidence in the results and available metrics to explore improvements in said simulations. Here, we address this research question by forming ensembles of atomic cluster expansion potentials, and using conformal prediction with ab initio training data to provide meaningful, calibrated error bars on several quantities of interest for silicon: the bulk modulus, elastic constants, relaxed vacancy formation energy, and the vacancy migration barrier. We evaluate the effects on uncertainty bounds using a range of different potentials and training sets. [ABSTRACT FROM AUTHOR]

Silicon, renowned for its remarkable energy density, has emerged as a focal point in the pursuit of high-energy storage solutions for the next generation. Nevertheless, silicon electrodes are known to undergo significant volume expansion during the insertion of lithium ions, leading to structural deformation and the development of internal stresses, and causing a rapid decline in battery capacity and overall lifespan. To gain deeper insights into the intricacies of charge rate effects, this study employs a combination of in situ measurements and computational modeling to elucidate the cyclic performance of composite silicon electrodes. The findings derived from the established model and curvature measurement system unveil the substantial alterations in stress and deformation as a consequence of varying charge rates. Notably, the active layer experiences compressive forces that diminish as the charge rate decreases. At a charge rate of 0.2, the active layer endures a maximum stress of 89.145 MPa, providing a comprehensive explanation for the observed deterioration in cycling performance at higher charge rates. This study not only establishes a fundamental basis for subsequent stress analyses of silicon electrodes but also lays a solid foundation for further exploration of the impact of charge rates on composite silicon electrodes. [ABSTRACT FROM AUTHOR]

Conductive-bridge random access memory can be used as a physical reservoir for temporal learning in reservoir computing owing to its volatile nature. Herein, a scaled Cu/HfOx/n+-Si memristor was fabricated and characterized for reservoir computing. The scaled, silicon nanofin bottom electrode formation is verified by scanning electron and transmission electron microscopy. The scaled device shows better cycle-to-cycle switching variability characteristics compared with those of large-sized cells. In addition, synaptic characteristics such as conductance changes due to pulses, paired-pulse facilitation, and excitatory postsynaptic currents are confirmed in the scaled memristor. High-pattern accuracy is demonstrated by deep neural networks applied in neuromorphic systems in conjunction with the use of the Modified National Institute of Standards and Technology database. Furthermore, a reservoir computing system is introduced with six different states attained by adjusting the amplitude of the input pulse. Finally, high-performance and efficient volatile reservoir computing in the scaled device is demonstrated by conductance control and system-level reservoir computing simulations. [ABSTRACT FROM AUTHOR]

The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si) substrates, with the concentrations across an order of magnitude from 1016 to 1017 cm−3, on the out-diffusion of phosphorus impurities within n/n+ epitaxial Si (Epi-Si) wafers have been investigated. It is found that the increase in the carbon concentration ([C]) from 1.0 × 1016 to 1.0 × 1017 cm−3 leads to the enhanced phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1100 °C in an N2 or an O2 ambient or to anneal at 1150 °C in an N2 ambient, but hardly affects the phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1150 °C in an O2 ambient. Based on the density functional theory calculations, it is derived that the increase in the [C] from 1.0 × 1016 to 1.0 × 1017 cm−3 in the HP-Cz Si substrate results in a significantly increased thermal equilibrium concentration of self-interstitial silicon (SiI) atoms at 1100 or 1150 °C, which, in turn, leads to the increased concentration of the SiI atoms that out-diffuse from the substrate to the epitaxial layer because the SiI atoms diffuse extremely fast in Si. Such a carbon-induced increase in the concentration of SiI atoms is believed to be responsible for the aforementioned enhanced phosphorus out-diffusion, which is predominantly dictated by the interstitialcy mechanism. In the case of anneal in the O2 ambient at sufficiently high temperatures such as 1150 °C, a large number of excessive SiI atoms injected into the Epi-Si wafer substantially mask the carbon enhancement effect on the phosphorus out-diffusion. Of technological significance, it is deduced that the [C] should be not higher than 1.0 × 1016 cm−3 in the HP-Cz Si wafers as the substrates of n/n+ Epi-Si wafers used for power devices. [ABSTRACT FROM AUTHOR]

The study of light-emitting defects in silicon created by ion implantation has gained renewed interest with the development of quantum optical devices. Improving techniques for creating and optimizing these defects remains a major focus. This work presents a comprehensive analysis of a photoluminescence line at a wavelength of 1240 nm (1 eV) caused by defects arising from the ion irradiation of the SiO2/Si system and subsequent thermal annealing. It is assumed that this emission is due to the formation of defect complexes WM with trigonal symmetry similar to the well-known W-centers. A distinctive feature of these defects is their thermal resistance up to temperatures of 800 °C and less pronounced temperature quenching compared to the W-line. The difference in the properties of these defect centers and W-centers can be explained by their different defect environments, resulting from the larger spatial separation between vacancies and interstitial atoms diffusing from the irradiated layer. This, in turn, is associated with the difference in the distribution of primary radiation defects during irradiation of the SiO2/Si system and silicon not covered with a SiO2 film. The patterns of changes in the WM line depending on various factors, such as the thickness of the SiO2 film, type of conductivity and impurity concentration in the original silicon, irradiation parameters, and annealing regimes, is studied and explained in detail. These findings demonstrate the benefits of this new approach when compared to previous methods. [ABSTRACT FROM AUTHOR]

We propose a main mechanism of large valley splitting experimentally observed at the interface of buried oxide (BOX)/silicon-on-insulator (SOI) structures. Silicon metal-oxide-semiconductor field effect transistors fabricated on a SIMOX (001) substrate, which is a kind of the SOI substrate, that is annealed at high temperatures for a long time are known to exhibit large valley splitting, but the origin of this splitting has long been unknown. Extended zone effective-mass approximation predicts that strain significantly affects valley splitting. In this study, we analyzed valley splitting based on this theory and found that the shear strain along [110] of approximately 5% near the BOX interface is a promising source for large valley splitting. [ABSTRACT FROM AUTHOR]

A comprehensive quantitative root cause study of defect evolution leading to memory window closure from a charge balance and charge trapping perspective throughout all phases of a Si channel Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect-transistor (FEFET) is reported. Starting with the first write pulse, an excessive SiO2 interlayer field is revealed that triggers the creation of defect levels Dit in excess of 1015 cm−2 eV−1 at the HZO–SiO2 interface screening ferroelectric (FE) polarization while enabling FE switching. Under subsequent early bipolar fatigue cycling (up to 104 cycles), defect creation commences at the SiO2–Si interface due to the high injected hole fluence (0.39 C/m2) during each stress pulse causing negative bias instability (NBI), which shifts the threshold voltage of the erase state VT,ERS by −0.3 V with accrual of permanently captured charge Nit of up to +5 × 10−3 C/m2 (3 × 1012 cm−2). Subsequently, Nit NBI generation at the SiO2–Si interface accelerates reaching levels of +7 × 10−2 C/m2, locking both FEFET program and erase drain current vs gate–source-voltage (ID–VGS) characteristics in the FEFET on-state inducing memory window closure at 105 cycles while FE switching (switched polarization Psw = 0.34 C/m2) remains essentially intact. These findings guide the down-selection toward suitable semiconductor/FE systems for charge balanced, reliable, and high endurance FEFETs. [ABSTRACT FROM AUTHOR]

In this work, we present a comprehensive re-evaluation of the iron–gallium (FeGa) recombination parameters in silicon using injection-dependent lifetime spectroscopy (IDLS). Ga-doped silicon wafers (of varying resistivities) with precise concentrations of intentional iron contamination in the silicon wafer bulk, through ion implantation and distribution, were used. The presence of interstitial Fei and FeGa, and their lifetime-limiting effects in these silicon wafers, were confirmed through measuring the effective minority carrier lifetime changes during the conditions that are known to cause FeGa dissociation and association. The presence of Fe was also confirmed by deep-level transient spectroscopy. To ensure accurate IDLS analysis of the FeGa defect in silicon, a lifetime linearization scheme was employed to effectively filter out interference by other defects. Error analysis was employed to find the combination of defect parameters that best fit the experimental data and to ascertain the range of uncertainty associated with the IDLS best-fit results. The optimal fitting of the experimental IDLS by Shockley–Read–Hall statistics produced an electron capture cross section σ n = 2.3 × 10 − 14 c m 2 , hole capture cross section σ p = 1.1 × 10 − 14 c m 2 , and a trap energy level E t = E V + 0.2 − 0.01 + 0.02 eV for the FeGa defect in silicon. The extracted defect parameters are also verified by experimentally measuring the crossover point of Fei and FeGa lifetime curves. [ABSTRACT FROM AUTHOR]

Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich surface layers were identified and a wet etch process was developed to remove them. Resistivity and Hall effect measurements were performed at various stages of device processing. The underlying gold-hyperdoped silicon was found to be semi-insulating, regardless of whether the surface gold was removed by etching or not. We propose a Fermi level pinning model to describe the band bending of the transformed surface layer and propose a promising device architecture for efficient Au-hyperdoped Si photodetectors. [ABSTRACT FROM AUTHOR]

Modulation doping of silicon has great potential for miniaturization, surface passivation, and third generation photovoltaics (PV). At a modulation-doped silicon surface, we observe the formation of a 2D hole layer at the silicon surface at low temperatures by means of photoluminescence (PL) measurements. A line shape analysis of band–band and hot luminescence reveals the hole density (which is equal to the modulation-doped acceptor density). A high excitation intensity leads to a Fermi edge singularity of the band–band and hot PL emission. While the 2D layer can be characterized by the observed luminescence, the spectral region of twice the bandgap is fully dominated by emission from this surface layer, impeding the measurement of bulk hot luminescence, e.g., from Auger electrons or from nonthermalized carriers in a hot carrier PV device. [ABSTRACT FROM AUTHOR]

Excess minority carriers create boron-related recombination centers that degrade the efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced reactions among the radiation-induced defects are poorly understood for devices exposed to particle radiation. This study investigates the structure, electronic properties, formation and annihilation mechanisms, and diffusion dynamics of the carrier-induced defects in particle-irradiated boron-doped silicon using density-functional modeling and junction spectroscopy. By revisiting the ground-state structures of the boron-di-interstitial clusters (B I 2), we find that the calculated acceptor and donor levels of such defects agree well quantitatively with the carrier-induced deep-level transient spectroscopy (DLTS) hole emission signatures at 0.43 and 0.53 eV above the valence band edge (E v), respectively. We also find that the formation of B I 2 is thermally activated by an energy of 0.50 eV, which we explain theoretically by the reduction of the migration barrier of mono-interstitials to 0.53 eV in the presence of excess minority carriers. Moreover, we discover that the B I 2 are potentially mobile with a migration barrier of 1.18 eV, contrary to the present understanding. [ABSTRACT FROM AUTHOR]

Recently, Chiloyan et al. [Appl. Phys. Lett. 116, 163102 (2020)] have reported that phonon transport could exceed bulk heat conduction if low-frequency phonons with long mean free path (MFP) remain in the nonthermal regime in silicon. To gain a better understanding of their findings, we investigated the effects of temperature-induced anharmonicity on both Landau–Rumer damping and Akhiezer damping, including polarization. To do this, we follow a rigorous procedure for calculating the Akhiezer model and use phonon kinetic theory based on the Boltzmann transport equation. Consequently, we find that in the Akhiezer regime, the longitudinal acoustic phonon modes (LA) are strongly suppressed by phonon anharmonicity compared to the transverse acoustic phonon modes. Therefore, the low-frequency phonons with a long MFP of LA can help to exceed bulk heat conduction if they remain in the regime of nonthermal phonon transport where there are no appreciable scatterings with other phonons. It is also shown that Akhiezer damping eliminates thermal conductivity by 16.8% at 500 K, which is higher than the observed reduction (12.6%) at 300 K in silicon, uncovering a novel regime where the Akhiezer damping, previously deemed insignificant in the thermal conduction of bulk silicon, becomes crucial. [ABSTRACT FROM AUTHOR]

Precise and reproducible current generation is the key to realizing quantum current standards in metrology. A promising candidate is a tunable-barrier single-charge pump, which can accurately transfer single charges one by one with an error rate below the ppm level. Although several measurements have shown such levels of accuracy, it is necessary to further pursue the possibility of high-precision operation toward reproducible generation of the pumping current in many devices. Here, we investigated silicon single-hole pumps, which may have the potential to outperform single-electron pumps because of the heavy effective mass of holes. Measurements on the temperature dependence of the current generated by the single-hole pump revealed that the tunnel barrier had high energy selectivity, which is a critical parameter for high-accuracy operation. In addition, we applied the dynamic gate-compensation technique to the single-hole pump and confirmed that it yielded a further performance improvement. Finally, we demonstrated gigahertz operation of a single-hole pump in which the estimated lower bound of the pump error rate was around 0.01 ppm. These results imply that single-hole pumps in silicon are capable of high-accuracy, high-speed, and stable single-charge pumping in metrological and quantum-device applications. [ABSTRACT FROM AUTHOR]

Spin qubit systems are one of the promising candidates for quantum computing. The quantum dot (QD) arrays are intensively investigated by many researchers. Because the energy-difference between the up-spin and down-spin states is very small, the detection of the qubit state is of prime importance in this field. Moreover, many wires are required to control qubit systems. Therefore, the integration of qubits and wires is also an important issue. In this study, the measurement process of QD arrays is theoretically investigated using resonant tunneling, controlled by a conventional transistor. It is shown that the number of possible measurements during coherence time can exceed a hundred under the backaction of the measurements owing to the nonlinear characteristics of resonant tunneling. It is also discussed to read out the measurement results by the conventional transistor. [ABSTRACT FROM AUTHOR]

Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner. [ABSTRACT FROM AUTHOR]

Abstract: Optically active quantum defects play an important role in quantum sensing, computing and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to understand their optoelectronic properties. Optical excitations that are central for their initialization and readout are linked to transitions between occupied and unoccupied single-particle states. It is commonly assumed that only quantum defects introducing levels well within the band gap and far from the band edges are of interest for quantum technologies as they mimic an isolated atom embedded in the host. In this perspective, we contradict this common assumption and show that optically active defects with energy levels close to the band edges can display similar properties. We highlight quantum defects that are excited through transitions to or from a band-like level (bound exciton) such as the T center and Se S i + in silicon. We also present how defects such as the silicon split-vacancy in diamond can involve transitions between localized levels that are above the conduction band or below the valence band. Loosening the commonly assumed requirement on the electronic structure of quantum defects offers opportunities in quantum defects design and discovery especially in smaller band gap hosts such as silicon. We discuss the challenges in terms of operating temperature for photoluminescence or radiative lifetime in this regime. We also highlight how these alternative type of defects bring their own needs in terms of theoretical developments and fundamental understanding. This perspective clarifies the electronic structure requirement for quantum defects and will facilitate the identification and design of new color centers for quantum applications especially driven by first principles computations.

The sensitivity and responsiveness of living cells to environmental changes are enabled by dynamic protein structures, inspiring efforts to construct artificial supramolecular protein assemblies. However, despite their sophisticated structures, designed protein assemblies have yet to be incorporated into macroscale devices for real-life applications. We report a 2D crystalline protein assembly of C98/E57/E66L-rhamnulose-1-phosphate aldolase (CEERhuA) that selectively blocks or passes molecular species when exposed to a chemical trigger. CEERhuA crystals are engineered via cobalt(II) coordination bonds to undergo a coherent conformational change from a closed state (pore dimensions

In an optically excited semiconductor micromechanical structure, photogenerated carriers (plasma waves) can produce elastic deformations (local strains and stresses)–plasmaelastic (PE) deformations. On the other hand, the generation of excess carriers will produce heat due to carrier thermalization and recombination processes. The generated heat can produce other elastic deformations–thermoelastic (TE) deformations. For these two components of elastic deformation, it is possible to consider two types of elastic displacements (two mods of elastic vibrations): elastic expanding and elastic bending. A theoretical model of the photoacoustic (PA) signal for optically excited Si membranes is given, which includes thermal diffusion (TD), TE, and PE mechanisms, in order to study elastic expansion and bending. The relations for the PA amplitude and the phase of elastic expanding and bending in the excited membrane are derived. Analysis of the PA signal indicates that the TD component is dominant for all thicknesses and practically the entire range of observed frequencies. The calculated PA amplitude and phase spectra show that the PA elastic expanding component has a significant influence on the total PA signal at low frequencies. On the other side, the calculated PA spectra show that the PA elastic bending component has a significant influence on the total PA signal at high frequencies. Experimental PA signals of Si membranes were measured using the sample-gas-microphone detection technique with a transmission configuration in relation to the modulation frequency of the optical excitation for different membrane thicknesses. The experimental PA spectra were compared with the theoretical ones. [ABSTRACT FROM AUTHOR]

Epitaxial BaTiO3 integrated on Si or Si-on-insulator using off-axis radio frequency sputtering is a promising material platform for building electro-optic modulators based on the Pockels effect. Barium titanate thin films with c-axis orientation have been epitaxially integrated on silicon-on-insulator wafers. They exhibit excellent structural quality with Pockels coefficient (r33) > 130 pm/V and propagation loss <2 dB/cm. Our results show that off-axis sputtered BaTiO3 films yield electro-optic modulation similar to that of high-quality films grown by molecular beam epitaxy and that the material is suitable for implementation of low-power Mach–Zehnder interferometer electro-optic modulators integrated on silicon in a Z-cut configuration. [ABSTRACT FROM AUTHOR]

Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum δ -doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the band structure and effective mass values of such δ layers, first modeling them as ordered supercells. Structural relaxation is found to have a significant impact on the impurity band energies and effective masses of the boron layers, but not the aluminum layers. However, disorder in the δ layers is found to lead to a significant flattening of the bands in both cases. We calculate the local density of states and doping potential for these δ -doped layers, demonstrating that their influence is highly localized with spatial extents at most 4 nm. We conclude that acceptor δ -doped layers exhibit different electronic structure features dependent on both the dopant atom and spatial ordering. This suggests prospects for controlling the electronic properties of these layers if the local details of the incorporation chemistry can be fine-tuned. [ABSTRACT FROM AUTHOR]

Neutron and γ-ray irradiation damages to transistors are found to be non-additive, and this is denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The recent defect-based model [Song and Wei, ACS Appl. Electron. Mater. 2, 3783 (2020)] for silicon bipolar junction transistors (BJTs) achieves quantitative agreement with experiments, but its assumptions on the defect reactions are unverified. Going beyond the model requires directly representing the effect of γ-ray irradiation in first-principles calculations, which was not feasible previously. In this work, we examine the defect-based model of the ISE by developing a multiscale method for the simulation of the γ-ray irradiation, where the γ-ray-induced electronic excitations are treated explicitly in excited-state first-principles calculations. We find the calculations agree with experiments, and the effect of the γ-ray-induced excitation is significantly different from the effects of defect charge state and temperature. We propose a diffusion-based qualitative explanation of the mechanism of positive/negative ISE in NPN/PNP BJTs in the end. [ABSTRACT FROM AUTHOR]

Three types of mesoporous silicon flakes were fabricated by anodization in methanoic hydrofluoric acid from the same substrates (heavily doped p-type). Even though anodization current density, rinsing, drying method, and storage condition were the same for all three wafers, the resulting porous silicon (PSi) structures had very different properties. They had very different colors. Two of them showed quite high luminescence quantum yields (QYs), confirmed by very long luminescence lifetimes. The highest QY exceeded 50% for a peak photoluminescence wavelength of ∼750 nm. To date, this QY is the highest obtained for PSi and very importantly for silicon with large mesopores, which is typically not highly efficient (as opposed to silicon with small mesopores and microporous silicon). Large mesopores (>15 nm diameter) facilitate impregnation of various substances into luminescent material, such as metals for plasmonics and drugs for theranostics. The differing luminescent properties were correlated to electrolyte temperature during anodization, and evolution of the electrolyte batch (lowering of active fluoride content and buildup of hexafluorosilicate) used to anodize several wafers, whose effects are often overlooked when mass-producing PSi. Supercritical drying and completion of the slow growth of native oxide passivation in the dark leading to different final partially oxidized PSi structures are also important factors for the high QYs obtained. The highest QY was obtained with the structure having the most isolated Si nanocrystals in an amorphous Si oxide tissue. [ABSTRACT FROM AUTHOR]

Electrical measurements are taken on bismuth-doped silicon subjected to electron irradiation at room temperature. The analysis of experimental data obtained in a temperature interval of 30–300 K shows a considerable decrease in the concentration of the shallow donor states of Bi in irradiated samples due to the formation of electrically neutral Bi-related complexes, which, in turn, are ascribed to bismuth–vacancy pairs. They are very stable up to T ≈ 300 °C. The contribution of radiation-produced acceptors in an irradiated material appears to be of minor importance. Unexpectedly, the behavior of the mobility of charge carriers in the course of irradiation and isochronal annealing displays very strange features. It is thought that this striking effect is accounted for by a split atomic configuration of bismuth–vacancy pairs, in sharp contrast to the well-known configuration of phosphorus–vacancy and arsenic–vacancy pairs. [ABSTRACT FROM AUTHOR]

As a by-product of solar panel production, photovoltaic silicon waste (PSW) is becoming a threat to the environment and human health. The classical resource recycling approaches are separating Si and SiC from PSW, most of which is costly and inefficient. In this study, the PSW acted as a silicon source was directly translated into a vertically oriented 3D Si 3 N 4 –SiC skeleton with ice-templating and in situ nitriding technology. The Si 3 N 4 –SiC/epoxy (EP) composites were successfully produced by the following vacuum epoxy infusion. Composite with 55.46 wt% filler content had the maximum thermal conductivity (TC) of 1.717 W/(m·K), 950 % higher than pure epoxy. The composite substrates showed excellent heat dissipation performance in practical applications due to their high TC, primarily attributed to the directional arrangement of ceramic powders in the Si 3 N 4 –SiC skeleton. Additionally, the Si 3 N 4 whiskers produced in situ promoted the formation of wider continuous phonon heat transfer channels. In short, we proposed a simple and feasible approach for recycling PSW to fabricate high-value heat-conducting composites, which expands a new direction of industrial waste secondary recycling and is of great importance for the clean utilization of the resource. [ABSTRACT FROM AUTHOR]

Hydroxyapatite and β-tricalcium phosphate are the most popular calcium phosphates used for bone tissue regeneration and in the manufacture of prostheses for bone replacement. Incorporation of different ions in low concentrations into the crystal lattice of calcium phosphates allows enhancing or modifying their properties. In this work, stoichiometric hydroxyapatite, calcium deficient hydroxyapatite and β-tricalcium phosphate co-substituted with zinc, magnesium, and silicate were synthesized using a mechanochemical approach. The compositions of the materials were investigated by powder X-ray diffraction, FTIR spectroscopy and scanning electron microscopy. The materials prepared were assessed for dissolution in water and implanted into rat skull bones. For the first time, it was demonstrated that the substituted calcium-deficient hydroxyapatite has an increased solubility in water compared with β-tricalcium phosphate and hydroxyapatite. In vivo studies revealed that the calcium-deficient hydroxyapatite promotes better osteogenesis than other calcium phosphates investigated here, showing almost complete remodeling of the damaged bone tissue already after 5 months. In this regard, calcium-deficient hydroxyapatite with zinc, magnesium, and silicate substitution is the most promising material for bone tissue regeneration. [ABSTRACT FROM AUTHOR]

Introduction With similar prevalence to injuries from fires, stings, and natural disasters, soft tissue injuries may occur from fireworks, industrial accidents, or other explosives. Surgeons are less familiar with treating high-velocity penetration from small debris, which may increase the chance of infection and subsequent fatality. Penetration risk curves have been developed to predict V50, the velocity with 50% probability of penetration, for various sized projectiles. However, there has been limited research using nonmetallic materials to achieve lower density projectiles less than 1 g cm−2, such as sand or rocks. Material and Methods To emulate the size and density of these energized particles, 14 ball bearings of stainless steel, silicon nitride, or Delrin acetal plastic ranging from 1.59 mm (1/16") to 9.53 mm (3/8") with sectional densities between 0.3 g cm−2 and 5  g cm−2 were launched toward porcine legs at a range of velocities to determine the penetration thresholds. High-speed videography was captured laterally at 40 kHz and impact velocity was captured using a physics-based tracking software. A generalized linear model with repeated measures and a logit link function was used to predict probability of penetration for each projectile. A total of 600 impacts were conducted to achieve at least 15 penetrating impacts for each projectile over a range of velocities. Results Higher impact velocities were required to penetrate the skin as sectional density of the projectile decreased, and the relationship between velocity and sectional density exhibited an exponential relationship (V 50, |$ = 184.6*S{D^{ - 0.385}}$|⁠ , R 2 = 0.95) with substantial change for nonlinearity in sectional densities ranging from 0.3 g cm−2 to 1  g cm−2. Compared to previous studies, the empirical relationship was consistent in the linear region (2-5  g cm−2), and novel experimentation filled in the gaps for sectional densities less than 1  g cm−2, which expressed more nonlinearity than previously estimated. For low-density projectiles with diameters of 1.59 (1/16") or 3.18 (1/8"), 32 impacts were lodged into the epidermis but did not penetrate through the dermis; however, penetration was defined as displacement into or through the dermis. Conclusions These experimental results may be used to develop and validate finite element simulations of low-density projectile impacts to address complex, multivariate loading conditions for the development of protective clothing to reduce wounding and subsequent infection rates. [ABSTRACT FROM AUTHOR]

The ultrastructure of the leaf epidermis and the localization and content of silicon in epidermal cells of the psammophyte Alyssum desertorum Stapf (Brassicaceae) were investigated using electron microscopy and laser confocal microscopy. The study aimed to examine the effect of flooding on the epidermal structure of the leaves, study the presence, localization, and content of silicon in the epidermal cells and determine whether changes in soil moisture affect the silicon content in the leaf epidermis. Silicon inclusions were observed in trichomes and typical epidermal cells on both leaf surfaces, with varying content depending on the cell type, leaf surface, and conditions growth. Soil flooding was found to influence the leaf epidermis ultrastructure and the silicon content in the epidermal cells of A. desertorum. Trichomes and pavement cells were identified as the main accumulators of silicon inclusions and wax-like structures. These findings suggest that changes in leaf microstructure and silicon content contribute to the normal functioning of psammophyte plants and can be considered signs of plant phenotypic plasticity and adaptive markers depending on water supply conditions. [ABSTRACT FROM AUTHOR]

The effectiveness of SiO 2 nanoparticles for their potential to control bacterial wilt (BW) disease in tomato plants was studied. Different concentrations of nanoparticles were first evaluated for their in-vitro antibacterial potential against Ralstonia solanacearum , the causal agent of BW disease. The disease suppressive effect of NP was investigated through in-planta experiments in tomato plants. Nanoparticles exhibited maximum toxicity to R. solanacearum at the concentration of 25 µg/ml and showed a 14.2 ± 0.5 mm growth inhibition zone in a lab test. Tomato plants were grown in pathogen-inoculated soil that was amended with NP suspension. The efficacy of NP application was evaluated for their effect on disease suppression, soil pathogen population, and plant growth and defense response. Results showed that NP at 150 ppm significantly reduced the pathogen population in the soil, as indicated by population count through molecular and dilution count analysis. The NP treatment suppresses the disease index and improves plant growth. The activities of plant antioxidant enzymes were increased, and the expression of resistance genes PR1, PR5, PAL , and PDF - 1.2 were enhanced after NP application. Plants grown in NP-treated soil showed improved photosynthesis and reduced oxidative stress as compared to untreated plants under pathogen stress, and the total phenolic and flavonoid content was enhanced significantly. Moreover, DPPH and FRAP content and AsA/DHA and GSH/GSSG ratios were enhanced, followed by NP application, implying that the non-enzymatic antioxidant capacity of the plants was improved. This study reveals the molecular and physiological action mechanism of managing BW in tomato plants. It suggests that SiO 2 nanoparticles could be included in the integrated management of BW disease as one of the effective components. [Display omitted] • SiO 2 nanoparticles exhibited antibacterial activity against ralstonia solanacearum. • Soil treatment with SiO 2 NP suppress pathogen population in soil. • Application of SiO 2 NP enhanced plant growth and resistance. [ABSTRACT FROM AUTHOR]

Silicon (Si) enhances plant resistance against herbivores and improves crop yield. This study investigated the effect of foliar application of silicic acid (SA), an important available form of Si, on the population growth of aphids (Lipaphis erysimi), gas exchange parameters and yield of rapeseed. The first experiment with treatments of foliar spray of 0.4% SA and a control, revealed a significant reduction in L. erysimi population growth in the 0.4% SA treatment (235.60 aphids/ plant) compared to the control (311.16 aphids/ plant). Additionally, the 0.4% SA treatment significantly enhanced rapeseed yield, with 68.28 siliqua per plant, 15.16 seeds per siliqua and 3.73 g yield per plant, compared to the control with 56.08 siliqua per plant, 13.08 seeds per siliqua and 3.26 g yield per plant. The second experiment with treatments of 0.4% SA alone, aphid alone, 0.4% SA + aphid and a control, showed no significant changes in gas exchange parameters for 0.4% SA and the control. However, 0.4% SA + aphid and aphid alone treatments significantly reduced the gas exchange parameters. Notably, 0.4% SA + aphid exhibited a lesser reduction in photosynthetic rate and stomatal conductance compared to aphid alone treatment, indicating the role of SA in enhancing gas exchange parameters during L. erysimi infestation in rapeseed. These findings suggest the beneficial application of SA in rapeseed to reduce aphid infestation, increase gas exchange parameters and improve yield. [ABSTRACT FROM AUTHOR]

Hydrofluorocarbon gas chemistries have long been favored for SiO2 etching. However, the fluorocarbon polymer generated during the process not only assists in obtaining a high selectivity, but also leads to chamber wall contamination. The adhesion efficiency of the polymer depends on the chamber wall temperature, which needs to be well-controlled to ensure controllable polymer deposition rate and etch characteristics. Similarly, the increasing gas temperature during the process is also expected to increase the production rate of polymer precursors. Hence, it is important to properly condition the chamber so that a sufficiently high and stable chamber temperature is reached before starting the actual process. This work utilizes an Inductively Coupled Plasma Reactive Ion Etcher to optimize a multi-cycle chamber conditioning process for two C4F8/H2-based chemistries. We use the integrated optical emission spectroscopy (OES) tool to show that the dependence of etch characteristics on conditioning time is much stronger for the highly polymerizing chemistry. For a low conditioning time (< 15 min), the instability of plasma species indicate that the chamber temperature has not yet plateaued, resulting in a ⁓60% decrease of recess in the underlying silicon layer during the lot processing time. By conducting systematic etch tests, we analyze the behavior of key OES peaks to identify the optimal conditioning time (≥ 30 min) for this recipe, which results in only a 13% decrease in silicon recess depth during the processing time. Subsequently, a method to assess the stability of plasma species during the conditioning process is devised, assisting in advance to identify the optimal moment to initiate the lot process. By comparing the experimental results of the two etch recipes, we also highlight the important correlation between conditioning time and polymerizing degree of the chemistry. [ABSTRACT FROM AUTHOR]

A nanosecond-pulsed laser with a wavelength of 1064 nm was used to irradiate silicon, and the concentration of water mist and smoke was characterized through light transmission. The drift and scattering effects of the laser propagation atmosphere (water mist and smog environment) on the laser and the influence of different ambient atmospheres on the effect of the laser irradiation on silicon were studied. Research has shown that when a laser passes through a water mist environment, as the laser transmission ratio increases, the diameter of the exit spot increases, and the diameter of the damage induced to single-crystal silicon increases approximately linearly. The erosion damage is enhanced, and a mixture of heat and stress damage occurs. Smoke is a simulated haze environment, and the attenuation effect of the aerosol content on the laser in a smoke environment depends on the particle size and concentration. When the laser transmission ratio is the same, the diameter of the particles is small, and the corresponding particulate matter concentration is large. The smaller the particle size, the larger the particle concentration corresponding to a different laser transmission ratio. When the laser energy of the target is the same, the shape and size of the export laser change as the laser passes through fog; furthermore, the damage shape is no longer circular, but it is rather stretched and deformed along a specific direction. This study can provide a reference for laser processing, far-field laser applications, and atmospheric optics. [ABSTRACT FROM AUTHOR]

In this article, a novel model was studied that explains the interaction between the equations governing the photo-thermoelasticity theory in the case of the presence of the diffusion of moisture of the semiconductor medium with the electromagnetic field. The photo-thermoelasticity theory is used to investigate the photothermal excitation process for an elastic semiconductor medium in a one-dimensional deformation. This article discusses the effect of the magnetic field on conductive moisture diffusivity. The coupling interactions between magneto-thermo-elastic stresses and moisture diffusivity are investigated. According to some initial conditions, the governing equations are investigated using the Laplace transform technique to calculate the numerical solution of the key physical field contribution in the Laplace domain. The basic quantities for the process in the Laplace domain are calculated using all mechanical stresses, thermal conditions, and plasma boundary surface conditions. To obtain complete solutions in the time domain for the main problems, the numerical method approach is used to invert the Laplace transform. Some comparisons are made under the influence of different parameters to show the wave propagation of the main fields. [ABSTRACT FROM AUTHOR]

Aluminum (Al) is the most abundant metal element in the Earth’s crust, yet it is present in trace levels in seawater. Growing evidence suggests potential effects of Al on the biogeochemical cycles of carbon (C) and silicon (Si) in the marine environment. By accumulation, sinking, and deposition, diatoms play a center role in coupling these three elements’ biocycles in the oceans. However, it is still a challenge to elucidate the behaviors of diatoms influenced by Al. Our review aims to present the current knowledge of Al biogeochemistry in marine environment and its impact on marine phytoplankton, with a focus on how Al influences diatoms. Previous researches indicate that Al can promote the growth of diatoms, and diatoms have the ability to incorporate Al into their frustules. Given this, we paid particular attention on the interaction between Al and diatom frustules, and the influences of Al on the physiology and ecology of diatoms. Furthermore, it is suggested that Al alters the accumulation of other nutrients such as nitrogen, phosphorus and iron in diatoms; the subsequent responses of diatoms are also discussed. The objective of this review is to address the potential roles of Al in diatoms and offer insights into the possible biogeochemistry implications. [ABSTRACT FROM AUTHOR]

Compound/silicon heterojunction (SCH) solar cells have been widely studied because of the low parasitic absorption of the window layer, high short‐circuit current, and simple preparation process. So far, most reported SCH solar cells are small‐area devices. By depositing MoOx hole transport layer using hot‐wire oxidation–sublimation deposition technique and employing a front‐contact back‐junction cell architecture, the large‐area SCH solar cells are successfully fabricated on M6 (166 mm) n‐type silicon wafers. Indium cerium oxide (ICO) film with the optimal thickness of about 110 nm is inserted between MoOx and Ag. The ICO/Ag stack functions well as a back reflector and is beneficial for increasing the short‐circuit current density, reducing the contact resistance, and improving the device stability. A power conversion efficiency of 21.59% is achieved on the champion SCH solar cell with the device area of 274.15 cm2. [ABSTRACT FROM AUTHOR]

Although epoxy resin (EP) has been widely used in many fields, it is still urgent to effectively improve its flame retardancy by halogen‐free strategies. Herein, a silicon‐containing cyclotriphosphazene derivative (HEP‐Si) was synthesized by nucleophilic substitution and silicon–hydrogen addition reaction using eugenol, hexachlorophosphazene and triethylsilane as raw materials. Then it served as a halogen‐free flame retardant for an EP/4,4′‐diaminodiphenylmethane system, and its performance was compared with that of commercial flame retardant hexaphenoxycyclotriphosphazene (HPP). The results showed that although the initial thermal decomposition temperature (T5%) of the cured products of EP/HEP‐Si was slightly lower than that of pure EP, T5% did not decrease further as the amount of HEP‐Si increased, indicating that good thermal stability was maintained. In addition, the char yield of the cured products of EP/HEP‐Si was significantly increased (more than 20 wt%) compared to that of pure EP. The cured EP with the addition of HPP and HEP‐Si both achieved a V‐0 rating in UL‐94 vertical burning test at 0.5 wt% phosphorus content, while the limiting oxygen index of the EP/HEP‐Si system was higher, reaching 33.2%. From cone calorimetric test results, the peak heat release rate, total heat release and total smoke production of the cured products of EP/HEP‐Si decreased by 61.5%, 37.1% and 26.2%, respectively, compared with that of pure EP. The cured EP/HEP‐Si materials also exhibited good thermomechanical and mechanical properties. Therefore, HEP‐Si is suggested to be a promising P/N/Si‐containing halogen‐free flame retardant for EP. © 2024 Society of Industrial Chemistry. [ABSTRACT FROM AUTHOR]

Copyright of Rare Metals is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

On‐chip optical polarizer can extract the desired polarized light signal while filtering out the other polarized light signal, which plays a key role in integrated photonic circuits for purifying the desired polarized signal and reducing polarization crosstalk. However, most of the reported optical polarizers can only work for fundamental modes. With the rapid development of on‐chip multimode processing systems, arbitrary high‐order mode optical polarizers are more desirable. In this contribution, a TM‐pass optical multimode polarizer is proposed and demonstrated using subwavelength grating‐based anisotropic manipulation, which can achieve the polarizing of arbitrary TM high‐order mode theoretically, and the experimental results show the lowest polarization extinction ratio of the fabricated device can reach up to 21.2 dB under working for four‐mode (TM0, TM1, TM2, and TM3) system. The dynamic data transmission with the data rate of 64 Gbit s−1 has also been demonstrated to verify its potential for systematized applications in the future. [ABSTRACT FROM AUTHOR]

A copper‐catalyzed C4‐selective addition of silicon nucleophiles released from an Si−B reagent to prochiral pyridinium triflates is reported. The dearomatization proceeds with excellent enantioselectivity using Cu(CH3CN)4PF6 as the precatalyst and (R,R)‐Ph‐BPE (1,2‐bis[(2R,5R)‐2,5‐diphenylphospholan‐1‐yl]ethane) as the chiral ligand. A carbonyl group at C3 is required for this, likely acting a weak donor group to preorganize and direct the nucleophilic attack towards C4. The resulting 4‐silylated 1,4‐dihydropyridines can be further converted into functionalized piperidine derivatives. [ABSTRACT FROM AUTHOR]

In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensively investigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigations have encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity of nitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage and amorphisation. In this study, we present a single-step technique called high-pressure gas immersion excimer laser doping (HP-GIELD) to manufacture nitrogen-hyperdoped silicon. Our approach offers ultrafast processing, scalability, high control, and reproducibility. Employing HP-GIELD, we achieved nitrogen concentrations exceeding 6 at% (3.01 × 1021 at/cm3) in intrinsic silicon. Notably, nitrogen concentration remained above the liquid solubility limit to ~1 µm in depth. HP-GIELD's high-pressure environment effectively suppressed physical surface damage and the generation of silicon dangling bonds, while the well-known effects of pulsed laser annealing (PLA) preserved crystallinity. Additionally, we conducted a theoretical analysis of light-matter interactions and thermal effects governing nitrogen diffusion during HP-GIELD, which provided insights into the doping mechanism. Leveraging excimer lasers, our method is well-suited for integration into high-volume semiconductor manufacturing, particularly front-end-of-line processes. [ABSTRACT FROM AUTHOR]

The reverse bias stability is a key concern for the commercialization and reliability of halide perovskite photovoltaics. Here, the robustness of perovskite‐silicon tandem solar cells to reverse bias electrical degradation down to −40 V is investigated. The two‐terminal tandem configuration, with the perovskite coupled to silicon, can improve the solar cell resistance to severe negative voltages when the tandem device is properly designed. While perovskite cells typically exhibit early reverse bias breakdown voltages, the serial connection with silicon cells with large shunt resistances and high voltage breakdown limits their negative polarization and prevent the passage of large current densities when reverse biased. The importance of careful optical design is illustrated, with bottom‐limited conditions required to prevent the perovskite top cell from exploring its own breakdown. This aspect is of great importance in the case of partial shading events when the solar spectrum is richer in the IR components than the standard AM1.5G. Notably, 100% of efficiency retained after polarization at −40 V in different stressing conditions is observed. The results presented suggest that standard industrial bypass diode schemes may be compatible with silicon/perovskite tandem photovoltaics and provide new guidelines for the standardization of the stressing protocols. [ABSTRACT FROM AUTHOR]

Dihydrogen activation is the paradigmatic reaction of frustrated Lewis pairs (FLPs). While trigonal‐planar Lewis acids have been well established in this transformation, tetrahedral Lewis acids are surprisingly limited. Indeed, several cases were computed as thermodynamically and kinetically feasible but exhibit puzzling discrepancies with experimental results. In the present study, a computational investigation of the factors influencing dihydrogen activation are considered by large ensemble sampling of encounter complexes, deformation energies and the activation strain model for a silicon/nitrogen FLP and compared with a boron/phosphorous FLP. The analysis adds the previously missing dimension of Lewis acids' structural flexibility as a factor that influences preexponential terms beyond pure transition state energies. It sheds light on the origin of "overfrustration" (defined herein), indicates structural constraint in Lewis acids as a linchpin for activation of weak donor substrates, and allows drawing a more refined mechanistic picture of this emblematic reactivity. [ABSTRACT FROM AUTHOR]

A multi‐object silicon photonic spectrometer with N input ports is proposed and realized by integrating a multi‐channel passband optical filter (POF), a tunable narrow‐band optical filter as well as a calibration‐free N × 1 Mach–Zehnder switch (MZS) array. Here, the multi‐channel POF consisting of a multimode waveguide grating (MWG) and a mode (de)multiplexer is used to achieve a broadened working window and an enhanced dynamic range for the present spectrometer, while the narrow‐band optical filter is realized with a thermally‐tunable Euler micro‐ring resonator (EMR) for achieving a very high spectral resolution. The introduction of the N × 1 MZS enables the time‐division‐multiplexed (TDM) spectrum analysis for multiple objects. In this paper, a multi‐object silicon photonic spectrometer with 16 input ports is demonstrated with an on‐chip loss of less than 3 dB and inter‐channel crosstalk as low as −25 dB. This multi‐object spectrometer can be used to analyze the spectra of 16 objects one by one by setting the 16 × 1 MZS, the resolution is as high as 50 pm, and the working window is ≈84 nm. [ABSTRACT FROM AUTHOR]

As a highly promising next‐generation high‐specific capacity anode, the industrial‐scale utilization of micron silicon has been hindered by the issue of pulverization during cycling. Although numerous studies have demonstrated the effectiveness of regulating the inorganic components of the solid electrolyte interphase (SEI) in improving pulverization, the evolution of most key inorganic components in the SEI and their correlation with silicon failure mechanisms remain ambiguous. This study provides a clear and direct correlation between the lithium hydride (LiH) in the SEI and the degree of micron silicon pulverization in the battery system. The reverse lithiation behavior of LiH on micron silicon during de‐lithiation exacerbates the localized stress in silicon particles and contributes to particle pulverization. This work successfully proposes a novel approach to decouple the SEI from electrochemical performance, which can be significant to decipher the evolution of critical SEI components at varied battery anode interfaces and analyze their corresponding failure mechanisms. [ABSTRACT FROM AUTHOR]

This work presents the effect of interpillar distance in a two-step dry reactive ion etching DRIE process for microneedle fabrication. The two-step DRIE process consists of a pillar creation followed by the pillar etching till turning it into a needle. The effect was carried out in a dumbbell-well pattern. The employed dumbbell-well pattern was adjusted to produce 650-µm microneedle height. The microneedle density was fixed at 657/cm2, and the interpillar distance was increased by reducing the pillar area. At a short interpillar distance, 25 µm, the etching rate is higher on the surface; for a wider distance, 75–100 µm, the etching produces triangular needles. At an interpillar distance of 200 µm or greater, the pillar etch rate becomes uniform along the microneedle height, producing a thin, sharp micropillar. The obtained silicon microneedles were employed to fabricate polymeric microneedles via micro-molding. The polymeric microneedles obtained by micro-molding showed the exact geometry of the original one. The obtained polymeric microneedles showed the capacity to penetrate the skin with a 0.5 N. [ABSTRACT FROM AUTHOR]

The modernization that is currently taking over across the world is resulting in numerous advancements in a variety of industries, and the most notable and apparent development is the rising use of solar energy, which has become more prevalent every day. Most companies, residences, schools, and other organizations rely mostly on solar energy as the main source of electricity. It was discovered that anti-reflective coating (ARC) had been applied to solar cells with the goal of increasing power conversion efficiency, decreasing reflection loss, and improving absorption. Although a single layer of ARC is sufficient, applying an additional layer might improve the solar cell application's effectiveness. Hence, the modeling and analysis of double layers of anti-reflection coating (ARC) with different types of materials have been investigated and evaluated using personal computer one-dimensional (PC1D) simulation software. In this study, the double-layer anti-reflection coating on the solar cell was modeled using PC1D, where this software allowed for one-dimensional simulation of the parameters required for the operation of semiconductor-based solar energy systems. The PC1D simulation reveals that SiO2/TiO2 has the highest efficiency (22.82%) and lowest reflection compared to Si3N4/TiO2 and ZnO/TiO2. Also, SiO2/TiO2 generates the highest external quantum efficiency (EQE) among ARC double layers, making it ideal for silicon solar cell applications in order to boost the solar cell's efficiency. The results for the effects of current, voltage, reflection, and EQE of the different double layers of ARC have also been studied in this paper. [ABSTRACT FROM AUTHOR]

ABSTRACT In this work, dendritic, water‐soluble, and nonaggregated axially substituted silicon phthalocyanines (EA‐TD‐Si and EA‐TD‐SiQ) were synthesized and characterized. Then, the supercoiled pBR322 plasmid DNA damage properties of EA‐TD‐Si and EA‐TD‐SiQ were examined using agarose gel electrophoresis without light irradiation. In addition, the cytotoxicity and phototoxicity of EA‐TD‐Si and EA‐TD‐SiQ on human endometrium adenocarcinoma (HEC‐1B) cells were investigated using an MTT assay. The results indicated that EA‐TD‐SiQ had high photodamage properties via singlet oxygen depending on the light dose, while EA‐TD‐Si did not show any DNA damage without light. In addition, EA‐TD‐SiQ had higher phototoxic effects than EA‐TD‐Si on HEC‐1B cells according to the MTT assay. These results revealed the potential of EA‐TD‐SiQ to be used as a PDT agent in endometrial cancer. [ABSTRACT FROM AUTHOR]